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1. 发明申请

US20100105215A1 METHOD OF MODIFYING INSULATING FILM 有权
标题翻译：修改绝缘膜的方法
公开(公告)号：US20100105215A1
公开(公告)日：2010-04-29
申请号：US12632131
申请日：2009-12-07
申请人： Takuya SUGAWARA , Yoshihide TADA , Genji NAKAMURA , Shigenori OZAKI , Toshio NAKANISHI , Masaru SASAKI , Seiji MATSUYAMA , Kazuhide HASEBE , Shigeru NAKAJIMA , Tomonori FUJIWARA
发明人： Takuya SUGAWARA , Yoshihide TADA , Genji NAKAMURA , Shigenori OZAKI , Toshio NAKANISHI , Masaru SASAKI , Seiji MATSUYAMA , Kazuhide HASEBE , Shigeru NAKAJIMA , Tomonori FUJIWARA
IPC分类号： H01L21/31
CPC分类号： H01L21/02112 , H01L21/0234 , H01L21/28176 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/3144 , H01L21/31658 , H01L29/518 , H01L29/78
摘要： An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.
摘要翻译：通过对绝缘膜进行包括等离子体处理和热退火处理的组合的改性处理来修饰绝缘膜。通过改善绝缘膜中所含的碳，低氧化物，悬挂键等导致的绝缘膜的特性劣化，提供了提高绝缘膜特性的方法。

2. 发明申请

US20110079826A1 SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING THE SAME AND APPARATUS FOR FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法及其制造方法
公开(公告)号：US20110079826A1
公开(公告)日：2011-04-07
申请号：US12573138
申请日：2009-10-04
申请人： Masaru SASAKI
发明人： Masaru SASAKI
IPC分类号： H01L29/78 , H01L21/28 , C23C16/513
CPC分类号： H01J37/32091 , H01J37/32192 , H01L21/0206 , H01L21/31116 , H01L29/6659 , H01L29/7833
摘要： A method for fabricating a semiconductor device includes forming a gate electrode on a surface of a substrate via a gate insulating film, forming an insulating film on a side surface of the gate electrode, and exposing an oxygen plasma onto the surface of the substrate. An electron temperature of the oxygen plasma in a vicinity of the surface of the substrate is equal to or less than about 1.5 eV.
摘要翻译：一种制造半导体器件的方法包括：通过栅极绝缘膜在衬底的表面上形成栅电极，在栅电极的侧表面上形成绝缘膜，并将氧等离子体暴露在衬底的表面上。基板表面附近的氧等离子体的电子温度等于或小于约1.5eV。

3. 发明申请

US20100132613A1 FABRICATION OF LOW DIELECTRIC CONSTANT INSULATING FILM 审中-公开
标题翻译：低介电常数绝缘膜的制造
公开(公告)号：US20100132613A1
公开(公告)日：2010-06-03
申请号：US12628397
申请日：2009-12-01
申请人： Masaru SASAKI , Satohiko HOSHINO , Shinji IDE , Yusaku KASHIWAGI
发明人： Masaru SASAKI , Satohiko HOSHINO , Shinji IDE , Yusaku KASHIWAGI
IPC分类号： B05C11/00
CPC分类号： H01L21/31695 , C23C16/401 , H01J37/32192 , H01J37/32935 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/0234 , H01L21/3003 , H01L21/31058 , H01L21/3121 , H01L21/31633
摘要： The present invention relates to a method of lowering dielectric constant of an insulating film including Si, O and CH formed by a chemical vapor deposition process. A process gas containing hydrogen atoms is supplied into a reaction vessel. A microwave is introduced into the reaction vessel to supply a uniform electromagnetic wave, thereby a plasma containing a hydrogen radical is generated in the reaction vessel. The structure of the insulating film is modified by the hydrogen radical contained in the plasma irradiated to the insulating film, lowering the dielectric constant of the film. The microwave is supplied into the reaction vessel through a radial-slot antenna.
摘要翻译：本发明涉及通过化学气相沉积工艺形成的包括Si，O和CH的绝缘膜的介电常数降低的方法。将含有氢原子的工艺气体供给到反应容器中。将微波引入反应容器中以提供均匀的电磁波，从而在反应容器中产生含有氢自由基的等离子体。绝缘膜的结构被照射到绝缘膜上的等离子体中所含的氢原子改性，降低了膜的介电常数。通过径向天线将微波提供给反应容器。

4. 发明申请

US20110276208A1 ELECTRIC POWER RECEPTION APPARATUS AND ELECTRICAL POWERED VEHICLE 有权
标题翻译：电力接收装置和电动车
公开(公告)号：US20110276208A1
公开(公告)日：2011-11-10
申请号：US13109691
申请日：2011-05-17
申请人： Masaru SASAKI
发明人： Masaru SASAKI
IPC分类号： H02J7/02 , B60L15/00 , B60L11/18
CPC分类号： B60W20/13 , B60K1/02 , B60K6/365 , B60K6/445 , B60L11/182 , B60W10/08 , B60W10/24 , B60W10/26 , B60W20/00 , B60W2510/244 , Y02T10/6239 , Y02T10/6269 , Y02T10/7005 , Y02T10/7072 , Y02T90/122 , Y02T90/14
摘要： A secondary self-resonant coil is installed at substantially the central region of the bottom face of the vehicle body, receiving electric power from a power feeding apparatus in a non-contact manner by resonating with a primary self-resonant coil of a power feeding apparatus provided external to the vehicle, via an electromagnetic field. In a power reception mode from the power feeding apparatus, high voltage is generated at the wire end of the secondary self-resonant coil, causing generation of a high electric field around the wire end. In order to keep the wire end distant from an ECU that is an electric apparatus located closest to the secondary self-resonant coil, the secondary self-resonant coil is arranged such that the wire end is located at a side opposite to the side where the ECU is deviated relative to the bilateral symmetric axis of the vehicle body.
摘要翻译：次级自谐振线圈安装在车体底面的大致中央区域处，通过与供电装置的初级自谐振线圈共振而以非接触方式从供电装置接收电力通过电磁场设置在车辆外部。在来自供电装置的电力接收模式中，在二次自谐振线圈的导线端产生高电压，从而在电线端部产生高电场。为了使电线端远离最靠近次级自谐振线圈的电气设备的ECU，次级自谐振线圈被布置成使得电线端部位于与 ECU相对于车身的双侧对称轴偏离。

5. 发明申请

US20090311870A1 PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS 审中-公开
标题翻译：等离子体蚀刻方法和等离子体蚀刻装置
公开(公告)号：US20090311870A1
公开(公告)日：2009-12-17
申请号：US12482698
申请日：2009-06-11
申请人： Masaru SASAKI
发明人： Masaru SASAKI
IPC分类号： H01L21/302 , H05H1/30
CPC分类号： H01L21/3065 , H01J37/32192 , H01J37/3244 , H01J37/32449
摘要： Provided is a plasma etching method capable of controlling an etching shape readily and properly during a plasma etching process. The plasma etching method includes: holding a semiconductor substrate W on a holding table 14 installed in a processing chamber 12; generating a microwave for plasma ignition; generating plasma in the processing chamber 12 by setting a gap between the dielectric plate 16 and the holding table 14 to be equal to or greater than about 100 mm and setting a pressure inside the processing chamber 12 to be equal to or higher than about 50 mTorr, and introducing the microwave into the processing chamber 12 via the dielectric plate 16; and performing a plasma etching process on the semiconductor substrate W by the plasma generated by supplying a reactant gas for plasma etching process into the processing chamber 12.
摘要翻译：提供了一种能够在等离子体蚀刻工艺期间容易且适当地控制蚀刻形状的等离子体蚀刻方法。等离子体蚀刻方法包括：将半导体衬底W保持在安装在处理室12中的保持台14上; 产生用于等离子体点火的微波; 通过将电介质板16和保持台14之间的间隙设置在等于或大于约100mm并将处理室12内的压力设定为等于或大于约50mTorr来在处理室12中产生等离子体并通过电介质板16将微波引入处理室12; 以及通过将等离子体蚀刻工艺的反应气体供给到处理室12中而产生的等离子体对半导体基板W进行等离子体蚀刻处理。

6. 发明申请

US20080176413A1 SELECTIVE PLASMA PROCESSING METHOD 失效
标题翻译：选择性等离子体处理方法
公开(公告)号：US20080176413A1
公开(公告)日：2008-07-24
申请号：US12053360
申请日：2008-03-21
申请人： Masaru SASAKI
发明人： Masaru SASAKI
IPC分类号： H01L21/31 , C23C16/44
CPC分类号： H01L21/31662 , H01L21/0214 , H01L21/0217 , H01L21/0223 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/3144 , H01L21/3185
摘要： A selective plasma processing method, within a processing chamber of a plasma processing apparatus, acts oxygen-containing plasma on a target object having silicon and a silicon nitride layer to selectively oxidize the silicon with respect to the silicon nitride layer and to form a silicon oxide film. Further, the ratio of a thickness of a silicon oxynitride film formed within the silicon nitride layer to a thickness of the silicon oxide film formed by the oxidization is equal to or smaller than 20%.
摘要翻译：在等离子体处理装置的处理室内的选择性等离子体处理方法，在具有硅和氮化硅层的目标物体上使含氧等离子体作用，以相对于氮化硅层选择性氧化硅，并形成氧化硅电影。此外，形成在氮化硅层内的氮氧化硅膜的厚度与通过氧化形成的氧化硅膜的厚度的比例等于或小于20％。

7. 发明申请

US20070221294A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20070221294A1
公开(公告)日：2007-09-27
申请号：US11691154
申请日：2007-03-26
申请人： Masaru SASAKI
发明人： Masaru SASAKI
IPC分类号： C23C16/517
CPC分类号： H01J37/32458 , H01J37/32192 , H01J37/3222 , H01L21/0217 , H01L21/0223 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/31662 , H01L21/3185
摘要： A plasma processing apparatus includes: a process container configured to accommodate a target object and hold a vacuum therein for performing a plasma process; a worktable configured to place the target object thereon inside the process container; a planar antenna including a plurality of slots and configured to supply microwaves into the process container; a gas feed mechanism configured to supply a process gas into the process container; and a top plate disposed opposite the worktable, the top plate being set at a position separated from the target object placed on the worktable by a distance of 20 mm or more and 100 mm or less.
摘要翻译：等离子体处理装置包括：处理容器，被配置为容纳目标物体并保持其中的真空以进行等离子体处理; 配置成将目标物体放置在处理容器内的工作台; 平面天线，包括多个槽并且被配置为将微波供应到所述处理容器中; 气体供给机构，其构造成将处理气体供给到所述处理容器中; 以及与工作台相对设置的顶板，顶板设置在与放置在工作台上的目标物体分开的距离为20mm以上且100mm以下的位置。

8. 发明申请

US20090262549A1 VEHICLE LAMP 有权
标题翻译：车灯
公开(公告)号：US20090262549A1
公开(公告)日：2009-10-22
申请号：US12427428
申请日：2009-04-21
申请人： Takashi INOUE , Masaru SASAKI
发明人： Takashi INOUE , Masaru SASAKI
IPC分类号： B60Q1/00
CPC分类号： F21S41/00 , F21S41/14 , F21S41/141 , F21S41/147 , F21S41/255 , F21S41/321 , F21S45/47 , F21S45/49 , F21S48/328 , F21V29/75 , F21V29/76
摘要： A vehicle lamp includes a semiconductor light emitting device, a thermally conductive portion which is in contact with the semiconductor light emitting device, a heatsink which dissipates heat generated by the semiconductor light emitting device, and a housing in which the semiconductor light emitting device, the thermally conductive portion and the heatsink are accommodated. The heatsink includes a base and plate fins arranged at intervals to protrude from the base. Each of the plate fins includes a plate surface facing the plate surface of an adjacent one of the plate fins and upwardly extending in a direction along the base. A plane parallel to at least one of the plate surfaces of the plate fins may be oblique with respect to a vertical direction. An inner surface of the housing may be oblique with respect to the vertical direction in a region above the plate fins.
摘要翻译：车灯包括半导体发光器件，与半导体发光器件接触的导热部分，散发由半导体发光器件产生的热的散热器，以及壳体，其中半导体发光器件，导热部分和散热片被容纳。散热器包括基板和板状散热片，其间隔设置成从基座突出。每个板翅片包括面对相邻的一个板翅片的板表面的板表面，并沿着基部的方向向上延伸。平行于板翅片的至少一个板表面的平面可以相对于垂直方向倾斜。壳体的内表面可以在板翅片上方的区域中相对于垂直方向倾斜。

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