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1. 发明授权

US07498905B2 SAW filter and method of manufacturing the same 有权
标题翻译： SAW滤波器及其制造方法
公开(公告)号：US07498905B2
公开(公告)日：2009-03-03
申请号：US11204119
申请日：2005-08-15
申请人： Takuo Kudo , Satoshi Waga
发明人： Takuo Kudo , Satoshi Waga
IPC分类号： H03H9/64
CPC分类号： H03H9/6483 , H03H9/02921
摘要： In an SAW filter on one side of a piezoelectric substrate are formed a pattern portion constituted by a conductor and provided on the outer circumferential portion of the surface acoustic wave device, and a conductor removing portion formed between the surface acoustic wave device and the pattern portion. The shape of the surface acoustic wave device is formed by the conductor removing portion and the surface acoustic wave device remains non-conductive with the pattern by the conductor removing portion.
摘要翻译：在压电基板的一侧的SAW滤波器中，形成由导体构成的图案部，设置在弹性表面波元件的外周部，形成在弹性表面波元件与图案部之间的导体除去部。声表面波装置的形状由导体去除部形成，声表面波装置通过导体去除部保持与图案不导通。

2. 发明申请

US20060038637A1 Saw filter and method of manufacturing the same 有权
标题翻译：锯片过滤器及其制造方法
公开(公告)号：US20060038637A1
公开(公告)日：2006-02-23
申请号：US11204119
申请日：2005-08-15
申请人： Takuo Kudo , Satoshi Waga
发明人： Takuo Kudo , Satoshi Waga
IPC分类号： H03H9/64
CPC分类号： H03H9/6483 , H03H9/02921
摘要： In an SAW filter on one side of a piezoelectric substrate are formed a pattern portion constituted by a conductor and provided on the outer circumferential portion of the surface acoustic wave device, and a conductor removing portion formed between the surface acoustic wave device and the pattern portion. The shape of the surface acoustic wave device is formed by the conductor removing portion and the surface acoustic wave device remains non-conductive with the pattern by the conductor removing portion.
摘要翻译：在压电基板的一侧的SAW滤波器中，形成由导体构成的图案部，设置在弹性表面波元件的外周部，形成在弹性表面波元件与图案部之间的导体除去部。声表面波装置的形状由导体去除部形成，声表面波装置通过导体去除部保持与图案不导通。

3. 发明授权

US07026743B2 Surface acoustic wave device having high dielectric strength and process for manufacturing the same 有权
标题翻译：具有高介电强度的表面声波装置及其制造方法
公开(公告)号：US07026743B2
公开(公告)日：2006-04-11
申请号：US10689811
申请日：2003-10-21
申请人： Haruhiko Fujimoto , Satoshi Waga , Takashi Sato , Kyosuke Ozaki , Yutaka Matsuo , Takeshi Ikeda , Kazuaki Kaneko , Takuo Kudo
发明人： Haruhiko Fujimoto , Satoshi Waga , Takashi Sato , Kyosuke Ozaki , Yutaka Matsuo , Takeshi Ikeda , Kazuaki Kaneko , Takuo Kudo
IPC分类号： H01L41/08
CPC分类号： H03H9/02929 , Y10T428/12368 , Y10T428/12493
摘要： A surface acoustic wave device includes a piezoelectric substrate and an electrode section, disposed on the piezoelectric substrate, having a thin-film structure. The electrode section includes interdigital electrodes and junction electrodes connected to the interdigital electrodes. The interdigital electrodes each include corresponding first base layers containing Ta and Cu layers or Cu—M alloy layers each disposed on the corresponding first base layers, wherein M represents one or more elements selected from the group consisting of Ag, Sn, and C.
摘要翻译：表面声波装置包括压电基片和设置在压电基片上的具有薄膜结构的电极部分。电极部分包括连指电极的交叉指状电极和结电极。叉指电极各自包括相应的第一基层，每个第一基层含有分别设置在相应的第一基层上的Ta和Cu层或Cu-M合金层，其中M表示选自Ag，Sn和C的一种或多种元素。

4. 发明授权

US06838807B2 Surface acoustic wave device suitable for use in GHz band 失效
标题翻译：表面声波装置适用于GHz频段
公开(公告)号：US06838807B2
公开(公告)日：2005-01-04
申请号：US10701831
申请日：2003-11-05
申请人： Kyosuke Ozaki , Satoshi Waga , Haruhiko Fujimoto , Takashi Sato , Yutaka Matsuo , Takeshi Ikeda , Kazuaki Kaneko , Takuo Kudo
发明人： Kyosuke Ozaki , Satoshi Waga , Haruhiko Fujimoto , Takashi Sato , Yutaka Matsuo , Takeshi Ikeda , Kazuaki Kaneko , Takuo Kudo
IPC分类号： H03H3/08 , H03H9/02 , H03H9/145 , H03H9/25 , H01L41/08
CPC分类号： H03H9/02559 , H03H3/08 , H03H9/14538
摘要： IDT electrodes are formed by a Cu alloy. When the wavelength of a SAW propagating in the direction of the X axis of a piezoelectric substrate is indicated by λ, and when the thickness of the IDT electrodes is indicated by H, the standardized thickness H/λ of the IDT electrodes ranges from 0.045 to 0.070, and the piezoelectric substrate is a rotated Y-cut LiTaO3 substrate whose rotational cut angle θ from the Y axis to the Z axis around the X axis ranges from 52.0° to 58.0°. With this arrangement, the reflection coefficient S11 becomes 0.88 or higher.
摘要翻译： IDT电极由Cu合金形成。当通过λ表示在压电基板的X轴方向上传播的SAW的波长，并且当IDT电极的厚度由H表示时，IDT电极的标准化厚度H /λ范围为0.045〜 0.070，并且压电基板是旋转的Y切割LiTaO 3基板，其旋转切角θ从Y轴到围绕X轴的Z轴在52.0°至58.0°之间。由此，反射系数S11变为0.88以上。

5. 发明申请

US20050127794A1 Surface acoustic wave device and manufacturing method thereof 审中-公开
标题翻译：声表面波装置及其制造方法
公开(公告)号：US20050127794A1
公开(公告)日：2005-06-16
申请号：US11007489
申请日：2004-12-08
申请人： Kyosuke Ozaki , Hideyuki Takahashi , Takashi Sato , Satoshi Waga , Takeshi Ikeda , Toshihiro Meguro
发明人： Kyosuke Ozaki , Hideyuki Takahashi , Takashi Sato , Satoshi Waga , Takeshi Ikeda , Toshihiro Meguro
IPC分类号： H03H9/145 , H03H3/08 , H03H3/10 , H03H9/02 , H03H9/25
CPC分类号： H03H9/02834
摘要： A piezoelectric substrate and interdigital electrode portions are covered with an insulating layer with an insulating thin film interposed therebetween. The piezoelectric substrate is made of LiTaO3 and the insulating thin film and the insulating layer are made of silicon oxide. By intentionally making the upper surface of the insulating layer flat, the deterioration of propagation efficiency of surface acoustic waves can be suppressed, so that it is possible to reduce increase in insertion loss of a resonator. Since the upper surface of the insulating layer is flat, it is also possible to reduce variation in resonant frequency and anti-resonant frequency due to the temperature change of the surface acoustic wave device.
摘要翻译：压电基板和叉指电极部分被绝缘层覆盖，绝缘层介于其间。压电基板由LiTaO 3 3制成，绝缘薄膜和绝缘层由氧化硅制成。通过有意地使绝缘层的上表面平坦化，可以抑制表面声波的传播效率的恶化，从而可以减小谐振器的插入损耗的增加。由于绝缘层的上表面是平坦的，所以也可以减小由于弹性表面波器件的温度变化引起的谐振频率和反谐振频率的变化。

6. 发明授权

US5529831A Thin film device 失效
标题翻译：薄膜装置
公开(公告)号：US5529831A
公开(公告)日：1996-06-25
申请号：US349155
申请日：1994-12-02
申请人： Satoshi Waga , Mitsuo Bitoh , Kazunari Takida , Kenji Shimizu , Kiyoshi Sasai , Yoshihiro Sudoh , Yoshinobu Kakihara
发明人： Satoshi Waga , Mitsuo Bitoh , Kazunari Takida , Kenji Shimizu , Kiyoshi Sasai , Yoshihiro Sudoh , Yoshinobu Kakihara
IPC分类号： H01F17/00 , H01F27/00 , H01F27/29 , H01F41/04 , H01L23/522 , H03H7/01 , H03H7/075 , B32B9/00
CPC分类号： H03H7/0115 , H01F17/0006 , H01F41/046 , H01L23/5227 , H01F2017/0066 , H01L2924/0002 , H03H2001/0078 , H03H2001/0085 , Y10S428/901 , Y10T428/12493 , Y10T428/12528 , Y10T428/24917
摘要： A thin film device comprising a substrate which is magnetic and has insulation property at least on the surface, coils formed spirally in a planar configuration on the substrate, a first interlayer insulation film formed to a portion excepting for the terminal portion of the coils and a magnetic material connection portion of the substrate, a magnetic film and a second interlayer insulation film formed successively on the first interlayer insulation film excepting for the terminal portions, and bump electrodes formed in connection with the terminal portions in which a crystallite material having a composition: Fe.sub.78 Ta.sub.10 C.sub.12 is used as the magnetic film. The thin film device can be formed an a reduced size and having a large inductance value. When the device is used as a noise filter, a cut-off frequency range can be lowered.
摘要翻译：一种薄膜器件，包括磁性并且至少具有表面绝缘性能的衬底，在衬底上以平面形式螺旋形成的线圈，形成于除了线圈的端子部分之外的部分的第一层间绝缘膜和所述基板的磁性材料连接部分，磁性膜和除了所述端子部分之外的所述第一层间绝缘膜上连续形成的第二层间绝缘膜以及与其中具有组成： Fe78Ta10C12用作磁性膜。薄膜器件可以形成为减小的尺寸并且具有大的电感值。当该装置用作噪声滤波器时，可以降低截止频率范围。

7. 发明授权

US08776597B2 Capacitive type humidity sensor and manufacturing method thereof 有权
标题翻译：电容式湿度传感器及其制造方法
公开(公告)号：US08776597B2
公开(公告)日：2014-07-15
申请号：US13232589
申请日：2011-09-14
申请人： Satoshi Waga , Sumihito Morita , Masaru Sakurai , Masaya Yamatani , Hideki Kamimura
发明人： Satoshi Waga , Sumihito Morita , Masaru Sakurai , Masaya Yamatani , Hideki Kamimura
IPC分类号： G01N27/22 , B81B7/00
CPC分类号： G01N27/223 , B81B7/0032 , G01N27/225 , H01L2224/48091 , H01L2224/48137 , H01L2924/181 , Y10T29/49007 , H01L2924/00014 , H01L2924/00012
摘要： A capacitive type humidity sensor is provided, where a sensor chip substrate, with a sensor section where electrostatic capacitance changes in accordance with humidity, a reference section where electrostatic capacitance does not change, and a plurality of pads which are output terminals of each section, and an IC substrate, which is electrically connected to the pads and which outputs the difference in capacitance between the sections as a voltage, are fixed to the same support substrate, where a protective member, which forms a sealed region surrounding the sensor section and which covers the reference section, is provided on the sensor chip substrate, the support substrate is covered by a sealing resin except for the region which is covered by the protective member, the sensor section is exposed to air at the region which is surrounded by the protective member, and the other constituent elements are covered by the sealing resin.
摘要翻译：提供了一种电容式湿度传感器，其中传感器芯片基板具有静电电容根据湿度变化的传感器部分，静电电容不变的参考部分和作为每个部分的输出端子的多个焊盘，并且电连接到焊盘并将这些部分之间的电容差输出为电压的IC基板固定到相同的支撑基板，其中形成围绕传感器部分的密封区域的保护构件，覆盖参考部分，设置在传感器芯片基板上，除了由保护部件覆盖的区域之外，支撑基板被密封树脂覆盖，传感器部分在被保护件包围的区域处暴露于空气中构件，并且其它构成元件被密封树脂覆盖。

8. 发明授权

US07602099B2 Surface acoustic wave device and method of manufacturing the same 有权
标题翻译：表面声波装置及其制造方法
公开(公告)号：US07602099B2
公开(公告)日：2009-10-13
申请号：US11409189
申请日：2006-04-21
申请人： Haruhiko Fujimoto , Kyosuke Ozaki , Satoshi Waga , Toshihiro Meguro , Takeshi Ikeda
发明人： Haruhiko Fujimoto , Kyosuke Ozaki , Satoshi Waga , Toshihiro Meguro , Takeshi Ikeda
IPC分类号： H01L41/047
CPC分类号： H03H3/08 , H03H9/02929 , H03H9/14541
摘要： First base layers made of TiN or TiOxNy (where, 0
摘要翻译：在叉指式换能器部分和压电基片之间设置由TiN或TiO x N y（其中，0

9. 发明授权

US07368034B2 Method of manufacturing surface acoustic wave device 有权
标题翻译：表面声波装置的制造方法
公开(公告)号：US07368034B2
公开(公告)日：2008-05-06
申请号：US11179111
申请日：2005-07-11
申请人： Shiro Ikeda , Satoshi Waga
发明人： Shiro Ikeda , Satoshi Waga
IPC分类号： B29C65/00 , H03H9/25
CPC分类号： H03H9/02921 , H03H3/08
摘要： A method of manufacturing a surface acoustic wave device includes interposing a thermosetting adhesive between the insulator that is inserted in the housing portion while the comb-shaped electrodes are directed upward and a bottom portion of the housing portion, and curing the adhesive by heating in a state in which a conductive member is disposed near the opening portion to come in contact with the comb-shaped electrodes, such that the conductive member is separated from the comb-shaped electrodes. Accordingly, a process of forming a conductive film made of carbon and a process of removing the conductive film are not required. Therefore, it is possible to provide a method of manufacturing a surface acoustic wave device that has high productivity and that prevents pyroelectric breakdown between the comb-shaped electrodes at low cost.
摘要翻译：一种表面声波装置的制造方法，其特征在于，在所述绝缘体插入所述壳体部的同时，将所述梳状电极向上方延伸的壳体部的底部插入所述热固性粘合剂，导电构件设置在开口部附近以与梳状电极接触的状态，使得导电构件与梳状电极分离。因此，不需要形成由碳制成的导电膜的工艺和除去导电膜的工艺。因此，可以提供一种制造具有高生产率并且以低成本防止梳状电极之间的热电击穿的表面声波装置的方法。

10. 外观设计

USD683634S1 Photo detector 有权
公开(公告)号：USD683634S1
公开(公告)日：2013-06-04
申请号：US29417020
申请日：2012-03-29
申请人： Yasuo Hayakawa , Satoshi Waga , Hideki Kamimura , Masaya Yamatani , Motoki Hirayama
设计人： Yasuo Hayakawa , Satoshi Waga , Hideki Kamimura , Masaya Yamatani , Motoki Hirayama

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