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    • 1. 发明申请
    • Circuit-Pattern Inspection Device
    • 电路图形检测装置
    • US20120305768A1
    • 2012-12-06
    • US13577719
    • 2011-02-21
    • Takuma YamamotoTakashi HiroiYusuke Ominami
    • Takuma YamamotoTakashi HiroiYusuke Ominami
    • G01N23/225
    • H01J37/28H01J2237/2811H01J2237/2817H01L22/12H01L2924/0002H01L2924/00
    • Provided is a circuit-pattern inspection device which enables efficient inspection of a semiconductor wafer by selectively inspecting areas on the semiconductor wafer, such as boundaries between patterns thereon, where defects are likely to occur during the step of producing the semiconductor wafer while changing the beam scanning direction for each area. Two-dimensional beam-deflection control is employed for inspection operations in a continuous-stage-movement-type circuit-pattern inspection device in which only one-dimensional scanning has been employed conventionally. That is, by employing a combination of an electron-beam-deflection control in a first direction parallel to the stage-movement direction and an electron-beam-deflection control in a second direction intersecting the stage-movement direction, it is possible to obtain an image of any desired area for inspection that is set within a swath. The amplitude of deflection signals for the electron-beam-deflection and the rise and fall timings of the signals are suitably controlled according to inspection conditions.
    • 提供一种电路图案检查装置,其能够通过选择性地检查半导体晶片上的区域,例如在其上的图案之间的边界上的区域,从而有效地检查半导体晶片,其中在制造半导体晶片的步骤期间可能会发生缺陷,同时改变光束 每个区域的扫描方向。 在通常仅采用一维扫描的连续级移动型电路图案检查装置中,进行二维光束偏转控制。 也就是说,通过在平行于载物台移动方向的第一方向上的电子束偏转控制和与载物台移动方向相交的第二方向上的电子束偏转控制的组合,可以获得 任何所需的检查区域的图像,其设置在条纹内。 根据检查条件适当地控制电子束偏转的偏转信号的幅度和信号的上升和下降定时。
    • 2. 发明授权
    • Circuit-pattern inspection device
    • 电路图案检查装置
    • US08658987B2
    • 2014-02-25
    • US13577719
    • 2011-02-21
    • Takuma YamamotoTakashi HiroiYusuke Ominami
    • Takuma YamamotoTakashi HiroiYusuke Ominami
    • G01N23/225
    • H01J37/28H01J2237/2811H01J2237/2817H01L22/12H01L2924/0002H01L2924/00
    • Provided is a circuit-pattern inspection device which enables efficient inspection of a semiconductor wafer by selectively inspecting areas on the semiconductor wafer, such as boundaries between patterns thereon, where defects are likely to occur during the step of producing the semiconductor wafer while changing the beam scanning direction for each area. Two-dimensional beam-deflection control is employed for inspection operations in a continuous-stage-movement-type circuit-pattern inspection device in which only one-dimensional scanning has been employed conventionally. That is, by employing a combination of an electron-beam-deflection control in a first direction parallel to the stage-movement direction and an electron-beam-deflection control in a second direction intersecting the stage-movement direction, it is possible to obtain an image of any desired area for inspection that is set within a swath. The amplitude of deflection signals for the electron-beam-deflection and the rise and fall timings of the signals are suitably controlled according to inspection conditions.
    • 提供一种电路图案检查装置,其能够通过选择性地检查半导体晶片上的区域,例如在其上的图案之间的边界上的区域,从而有效地检查半导体晶片,其中在制造半导体晶片的步骤期间可能会发生缺陷,同时改变光束 每个区域的扫描方向。 在通常仅采用一维扫描的连续级移动型电路图案检查装置中,进行二维光束偏转控制。 也就是说,通过在平行于载物台移动方向的第一方向上的电子束偏转控制和与载物台移动方向相交的第二方向上的电子束偏转控制的组合,可以获得 任何所需的检查区域的图像,其设置在条纹内。 根据检查条件适当地控制电子束偏转的偏转信号的幅度和信号的上升和下降定时。
    • 4. 发明申请
    • DEFECT INSPECTING APPARATUS
    • 缺陷检查装置
    • US20130248709A1
    • 2013-09-26
    • US13992057
    • 2011-11-24
    • Takuma YamamotoTakashi HiroiHiroshi Miyai
    • Takuma YamamotoTakashi HiroiHiroshi Miyai
    • H01J37/26
    • H01J37/26G06T7/001G06T2207/10061G06T2207/30148
    • A semiconductor wafer 11 is irradiated for scanning with a charged particle beam 6 so as to detect secondary charged particles 9 obtained from the wafer 11 as a result of the irradiation of the beam 6. A detected image of an inspection area obtained based on scanning information and on a detection signal derived from the secondary charged particles 9 is compared with a detected image of a reference area to find a difference therebetween. The difference is compared with a threshold value to detect a defect candidate. Defect information including positional information about the defect candidate is generated in such a manner as to include a relative position of a predetermined feature point within each of repeat patterns formed on the semiconductor wafer 11 with regard to the origin of a coordinate area established in each of these repeat patterns, and a relative position of the defect candidate with regard to the feature point. This contributes to providing a defect inspecting apparatus capable of determining defective areas for extraction by FIB more easily than before.
    • 照射半导体晶片11,利用带电粒子束6进行扫描,以便检测由于光束6的照射而从晶片11获得的二次带电粒子9.检测图像根据扫描信息获得 并且将从二次带电粒子9导出的检测信号与检测到的参考区域的图像进行比较,以发现它们之间的差异。 将该差异与阈值进行比较以检测缺陷候选。 生成包括关于缺陷候选的位置信息的缺陷信息,以这样的方式产生:在每个形成在半导体晶片11上的每个重复图案中的预定特征点的相对位置相对于在每个 这些重复图案以及缺陷候选对于特征点的相对位置。 这有助于提供能够比以前更容易地确定由FIB提取的缺陷区域的缺陷检查装置。
    • 8. 发明授权
    • Motion vector detection device, apparatus for detecting motion vector and motion vector detection method
    • 运动矢量检测装置,检测运动矢量和运动矢量检测方法的装置
    • US08731246B2
    • 2014-05-20
    • US13221938
    • 2011-08-31
    • Takuma YamamotoNao Mishima
    • Takuma YamamotoNao Mishima
    • G06K9/00
    • G06T7/238G06T2207/10016G06T2207/20021
    • A motion vector detection device includes: a matching error calculation part that calculates matching errors between a focus block and each of reference blocks; a least matching error calculation part calculating a least matching error from among the matching errors; a threshold calculation part calculating a threshold value; a correction vector calculation part calculating a correction vector from motion vectors detected in the reference blocks; and a motion vector determination part determining, as a motion vector for the focus block, a relative position vector in a block in which the relative position vector with respect to the focus block is the closest to the correction vector, the block being selected from among the reference blocks in which a difference between the plurality of matching errors and the least matching error is within the threshold value.
    • 运动矢量检测装置包括:匹配误差计算部,其计算聚焦块与各参考块之间的匹配误差; 从所述匹配误差中计算最小匹配误差的最小匹配误差计算部; 计算阈值的阈值计算部; 校正矢量计算部分,从参考块中检测的运动矢量计算校正矢量; 以及运动矢量确定部,其确定作为所述焦点块的运动矢量的相对于所述焦点块的相对位置矢量最接近所述校正向量的块中的相对位置矢量,所述块选自 其中多个匹配误差和最小匹配误差之间的差在阈值内的参考块。
    • 9. 发明申请
    • INTERPOLATION FRAME GENERATING APPARATUS AND METHOD
    • 内插框发生装置和方法
    • US20110211111A1
    • 2011-09-01
    • US12884746
    • 2010-09-17
    • Nao MishimaTakuma Yamamoto
    • Nao MishimaTakuma Yamamoto
    • H04N7/01
    • H04N7/014G06T3/40
    • According to one embodiment, an apparatus includes a motion estimation unit, a generating unit, a detection unit, and a filtering unit. The motion estimation unit is configured to estimate a first motion vector from a first reference frame to a second reference frame. The generating unit is configured to assign a first pixel value and a second motion vector to an interpolation frame. The detection unit is configured to detect an occlusion region in the interpolation frame. The filtering unit is configured to assign the second motion vector to the occlusion region as a third motion vector, calculate degrees of difference between second pixel values derived from the second motion vectors and third pixel values derived from the third motion vectors, and assign a fourth pixel value derived from a fourth motion vector to the occlusion region, wherein the fourth motion vector is calculated based on the degrees of difference.
    • 根据一个实施例,一种装置包括运动估计单元,生成单元,检测单元和滤波单元。 运动估计单元被配置为从第一参考帧估计第一运动矢量到第二参考帧。 生成单元被配置为向内插帧分配第一像素值和第二运动矢量。 检测单元被配置为检测插值帧中的遮挡区域。 滤波单元被配置为将第二运动矢量分配给遮挡区域作为第三运动矢量,计算从第二运动矢量导出的第二像素值与从第三运动矢量导出的第三像素值之间的差异度,并分配第四运动矢量 从第四运动矢量导出到遮挡区域的像素值,其中基于差异度计算第四运动矢量。