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1. 发明申请

US20120027926A1 REFERENCE ELECTRODE, ITS MANUFACTURING METHOD, AND AN ELECTROCHEMICAL CELL 审中-公开
标题翻译：参考电极，其制造方法和电化学细胞
公开(公告)号：US20120027926A1
公开(公告)日：2012-02-02
申请号：US13193439
申请日：2011-07-28
申请人： Takuhiro Miyuki , Takashi Mukai , Tetsuo Sakai , Yukio Yamakawa , Yoshiyuki Honjo , Hironori Yamasaki
发明人： Takuhiro Miyuki , Takashi Mukai , Tetsuo Sakai , Yukio Yamakawa , Yoshiyuki Honjo , Hironori Yamasaki
IPC分类号： B05D5/12 , C25D3/42 , C25D7/06 , C25D3/56
CPC分类号： H01M4/134 , H01M4/0426 , H01M4/0438 , H01M4/1395 , H01M4/36 , H01M4/366 , H01M4/661 , H01M4/667
摘要： [PROBLEM] The purpose of the present invention is to provide a reference electrode which is easy to manufacture and handle, its manufacturing method, and an electrochemical cell using this.[METHOD FOR SOLVING THE PROBLEM] The reference electrode 10 comprises a core material 11 extending parallel to the anode 14 or the cathode 16 from a terminal, a lithium membrane 12 coating from a tip of the core material 11 to a field with predetermined length, and an insulator 13 partially coating a field uncoated with the lithium membrane 12 on the core material 11. The material consisting of at least a surface of the core material 11 is a conductive material which is substantially unresponsive to lithium or lithium alloy. The maximum width in a cross section of the core material 11 is preferably in the range of not less than 5 micrometers but not more than 50 micrometers, and thickness of the lithium membrane is preferably in the range of not less than 0.1 micrometers but not more than 20 micrometers. By using the core material 11 with higher rigidity than lithium or lithium alloy, handling and manufacturing the reference material 10 is easy, for example, the material can be processed easily and its shape can be stabilized.[SELECTED FIGURE] FIG. 2
摘要翻译：本发明的目的是提供一种容易制造和处理的参比电极，其制造方法和使用该电极的电化学电池。 [解决问题的方法]参考电极10包括从端子平行于阳极14或阴极16延伸的芯材11，从芯材11的尖端涂覆到具有预定长度的磁场的锂膜12，以及将芯膜材料11上的锂膜12未涂覆的场部分地覆盖的绝缘体13.由芯材11的至少一个表面构成的材料是对锂或锂合金基本上无响应的导电材料。芯材11的截面的最大宽度优选为5μm以上且50μm以下的范围，锂膜的厚度优选为0.1μm以上，更优选为0.1μm以上超过20微米。通过使用具有比锂或锂合金更高的刚性的芯材11，容易进行参考材料10的处理和制造，例如可以容易地处理材料并且可以使其形状稳定。 [选择的图] 2

2. 发明授权

US08772809B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08772809B2
公开(公告)日：2014-07-08
申请号：US13599853
申请日：2012-08-30
申请人： Katsuyoshi Furuki , Hironori Yamasaki , Yukie Nishikawa
发明人： Katsuyoshi Furuki , Hironori Yamasaki , Yukie Nishikawa
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes a light emitting layer, a first electrode, a first conductivity type layer, a second conductivity type layer, and a second electrode. The first electrode includes a reflection metal layer. The first conductivity type layer is provided between the light emitting layer and the first electrode. The second conductivity type layer has a first surface on the light emitting layer side and a second surface on an opposite side of the first surface. The second electrode is provided on the second surface of the second conductivity type layer. A plurarity of interfaces, provided between the first conductivity type layer and the reflection metal layer, has at least first concave-convex structures. A region of the second surface of the second conductivity type layer, where the second electrode is not provided, has second concave-convex structures.
摘要翻译：根据一个实施例，半导体发光器件包括发光层，第一电极，第一导电型层，第二导电类型层和第二电极。第一电极包括反射金属层。第一导电类型层设置在发光层和第一电极之间。第二导电类型层在发光层侧具有第一表面和在第一表面的相对侧上的第二表面。第二电极设置在第二导电类型层的第二表面上。提供在第一导电类型层和反射金属层之间的界面的多个具有至少第一凹凸结构。不设置第二电极的第二导电型层的第二表面的区域具有第二凹凸结构。

3. 发明授权

US08674384B2 Light emitting element 有权
标题翻译：发光元件
公开(公告)号：US08674384B2
公开(公告)日：2014-03-18
申请号：US13048046
申请日：2011-03-15
申请人： Takashi Kataoka , Yukie Nishikawa , Hironori Yamasaki
发明人： Takashi Kataoka , Yukie Nishikawa , Hironori Yamasaki
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/22
摘要： According to one embodiment, a light emitting element includes a light emitting layer, a cladding layer, a current spreading layer, a second layer, and an electrode. The light emitting layer is capable of emitting emission light. The current spreading layer includes a surface processed layer and a first layer. The surface processed layer has a surface including convex portions and bottom portions provided adjacent to the convex portions. The first layer is provided between the surface processed layer and the cladding layer. The second layer is provided between the surface processed layer and the cladding layer and includes a region having an impurity concentration higher than an impurity concentration of the current spreading layer. The electrode is provided in a region of the surface of the surface processed layer where the convex portions and the bottom portions are not provided.
摘要翻译：根据一个实施例，发光元件包括发光层，包覆层，电流扩散层，第二层和电极。发光层能够发射发光。电流扩散层包括表面处理层和第一层。表面处理层具有包括与凸部相邻设置的凸部和底部的表面。第一层设置在表面处理层和包覆层之间。第二层设置在表面处理层和包覆层之间，并且包括杂质浓度高于电流扩散层的杂质浓度的区域。电极设置在表面处理层的没有设置凸部和底部的表面的区域中。

4. 发明授权

US09224916B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09224916B2
公开(公告)日：2015-12-29
申请号：US13614124
申请日：2012-09-13
申请人： Hironori Yamasaki , Yukie Nishikawa
发明人： Hironori Yamasaki , Yukie Nishikawa
IPC分类号： H01L33/22 , H01L33/44 , H01L33/00 , H01L33/38 , H01L33/40
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/145 , H01L33/16 , H01L33/30 , H01L33/38 , H01L33/405 , H01L33/44
摘要： According to an embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a dielectric film and an electrode. The first semiconductor layer is capable of emitting light. The second semiconductor layer has a first major surface in contact with the first semiconductor layer and a second major surface opposite to the first major surface, the second major surface including a first region having convex structures and a second region not having the convex structures. The dielectric film is provided at least at a tip portion of the convex structures, and the electrode is provided above the second region.
摘要翻译：根据实施例，半导体发光器件包括第一半导体层，第二半导体层，电介质膜和电极。第一半导体层能够发光。第二半导体层具有与第一半导体层接触的第一主表面和与第一主表面相对的第二主表面，第二主表面包括具有凸起结构的第一区域和不具有凸起结构的第二区域。绝缘膜至少设置在凸结构的顶端部，电极设置在第二区域的上方。

5. 发明授权

US08618551B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08618551B2
公开(公告)日：2013-12-31
申请号：US13219862
申请日：2011-08-29
申请人： Yukie Nishikawa , Hironori Yamasaki , Katsuyoshi Furuki , Takashi Kataoka
发明人： Yukie Nishikawa , Hironori Yamasaki , Katsuyoshi Furuki , Takashi Kataoka
IPC分类号： H01L31/0256
CPC分类号： H01L33/38 , H01L33/14 , H01L33/405 , H01L33/42 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes a substrate, a first electrode, a first conductivity type layer, a light emitting layer, a second conductivity type layer and a second electrode. The first conductivity type layer includes a first contact layer, a window layer having a lower impurity concentration than the first contact layer and a first cladding layer. The second conductivity type layer includes a second cladding layer, a current spreading layer and a second contact layer. The second electrode includes a narrow-line region on the second contact layer and a pad region electrically connected to the narrow-line region. Band gap energies of the first contact and window layers are larger than that of the light emitting layer. The first contact layer is provided selectively between the window layer and the first electrode and without overlapping the second contact layer as viewed from above.
摘要翻译：根据一个实施例，半导体发光器件包括衬底，第一电极，第一导电类型层，发光层，第二导电类型层和第二电极。第一导电类型层包括第一接触层，具有比第一接触层低的杂质浓度的窗口层和第一包层。第二导电类型层包括第二包覆层，电流扩散层和第二接触层。第二电极包括在第二接触层上的窄线区域和电连接到窄线区域的焊盘区域。第一触点和窗口层的带隙能量大于发光层的带隙能量。选择性地在窗口层和第一电极之间提供第一接触层，并且从上方观察不与第二接触层重叠。

6. 发明申请

US20130221367A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20130221367A1
公开(公告)日：2013-08-29
申请号：US13599853
申请日：2012-08-30
申请人： Katsuyoshi Furuki , Hironori Yamasaki , Yukie Nishikawa
发明人： Katsuyoshi Furuki , Hironori Yamasaki , Yukie Nishikawa
IPC分类号： H01L33/60 , H01L33/02
CPC分类号： H01L33/22 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes a light emitting layer, a first electrode, a first conductivity type layer, a second conductivity type layer, and a second electrode. The first electrode includes a reflection metal layer. The first conductivity type layer is provided between the light emitting layer and the first electrode. The second conductivity type layer has a first surface on the light emitting layer side and a second surface on an opposite side of the first surface. The second electrode is provided on the second surface of the second conductivity type layer. A plurarity of interfaces, provided between the first conductivity type layer and the reflection metal layer, has at least first concave-convex structures. A region of the second surface of the second conductivity type layer, where the second electrode is not provided, has second concave-convex structures.
摘要翻译：根据一个实施例，半导体发光器件包括发光层，第一电极，第一导电型层，第二导电类型层和第二电极。第一电极包括反射金属层。第一导电类型层设置在发光层和第一电极之间。第二导电类型层在发光层侧具有第一表面和在第一表面的相对侧上的第二表面。第二电极设置在第二导电类型层的第二表面上。提供在第一导电类型层和反射金属层之间的界面的多个具有至少第一凹凸结构。不设置第二电极的第二导电型层的第二表面的区域具有第二凹凸结构。

7. 发明申请

US20120104431A1 LIGHT EMITTING ELEMENT 有权
标题翻译：发光元件
公开(公告)号：US20120104431A1
公开(公告)日：2012-05-03
申请号：US13048046
申请日：2011-03-15
申请人： Takashi Kataoka , Yukie Nishikawa , Hironori Yamasaki
发明人： Takashi Kataoka , Yukie Nishikawa , Hironori Yamasaki
IPC分类号： H01L33/40
CPC分类号： H01L33/14 , H01L33/22
摘要： According to one embodiment, a light emitting element includes a light emitting layer, a cladding layer, a current spreading layer, a second layer, and an electrode. The light emitting layer is capable of emitting emission light. The current spreading layer includes a surface processed layer and a first layer. The surface processed layer has a surface including convex portions and bottom portions provided adjacent to the convex portions. The first layer is provided between the surface processed layer and the cladding layer. The second layer is provided between the surface processed layer and the cladding layer and includes a region having an impurity concentration higher than an impurity concentration of the current spreading layer. The electrode is provided in a region of the surface of the surface processed layer where the convex portions and the bottom portions are not provided.
摘要翻译：根据一个实施例，发光元件包括发光层，包覆层，电流扩散层，第二层和电极。发光层能够发射发光。电流扩散层包括表面处理层和第一层。表面处理层具有包括与凸部相邻设置的凸部和底部的表面。第一层设置在表面处理层和包覆层之间。第二层设置在表面处理层和包覆层之间，并且包括杂质浓度高于电流扩散层的杂质浓度的区域。电极设置在表面处理层的没有设置凸部和底部的表面的区域中。

8. 发明申请

US20060220732A1 Constant current circuit and constant current generating method 有权
标题翻译：恒流电路和恒流产生方法
公开(公告)号：US20060220732A1
公开(公告)日：2006-10-05
申请号：US11296392
申请日：2005-12-08
申请人： Hironori Yamasaki
发明人： Hironori Yamasaki
IPC分类号： G05F1/10
CPC分类号： G05F3/245
摘要： The present invention provides a constant current circuit and a constant current generating method, wherein when a voltage slight in temperature dependence is applied to an element to output a constant current, temperature dependence of the element can be cancelled. A current indicative of first temperature dependence, which is generated by applying a bias voltage slight in temperature dependence to a first current setting section, and a current indicative of second temperature dependence, which is generated by applying a bias voltage slight in temperature dependence to a second current setting section are added and outputted as a constant current slight in temperature dependence. When a bias voltage slight in temperature dependence is applied to a current setting section having resistive components to generate currents, even where the resistive components have temperature dependence, the first and second current setting sections having temperature dependence opposite to each other are parallel-connected and bias voltages are applied thereto, after which the generated currents are added together. Consequently, the temperature dependence contained in the individual current setting sections can be cancelled out and hence a constant current slight in temperature dependence can be outputted.
摘要翻译：本发明提供一种恒流电路和恒流产生方法，其中当温度依赖性小的电压施加到元件以输出恒定电流时，可以消除元件的温度依赖性。指示第一温度依赖性的电流，其通过对温度依赖性施加轻微的偏置电压而产生第一温度依赖性，以及指示第二温度依赖性的电流，其是通过将温度依赖性稍微偏置的偏置电压第二电流设定部分作为温度依赖性的轻微恒定电流相加而输出。当具有温度依赖性的偏置电压施加到具有电阻分量的电流设定部分以产生电流时，即使在电阻分量具有温度依赖性的情况下，具有彼此相反的温度依赖性的第一和第二电流设定部分并联连接，施加偏置电压，之后将所产生的电流相加在一起。因此，可以抵消各个电流设定部中包含的温度依赖性，能够输出温度依赖性微小的恒定电流。

9. 发明授权

US08530913B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08530913B2
公开(公告)日：2013-09-10
申请号：US13019681
申请日：2011-02-02
申请人： Yukie Nishikawa , Takashi Kataoka , Hironori Yamasaki , Hisashi Mori , Kazunari Yabe
发明人： Yukie Nishikawa , Takashi Kataoka , Hironori Yamasaki , Hisashi Mori , Kazunari Yabe
IPC分类号： H01L33/00 , H01L33/60
CPC分类号： H01L33/22 , H01L33/325 , H01L33/405
摘要： According to one embodiment, a light emitting device includes a light emitting layer, a first electrode, a first and second layers, and a cladding layer. The first layer has a first impurity concentration of a first conductivity type, and allows a carrier to be diffused in the light emitting layer. The second layer has a second impurity concentration of the first conductivity type higher than the first impurity concentration, and includes a first and second surfaces. The first surface is with the first layer. The second surface has a formation region and a non-formation region of the first electrode. The non-formation region includes convex structures with an average pitch not more than a wavelength of the emission light. The cladding layer is provided between the first layer and the light emitting layer and has an impurity concentration of the first conductivity type.
摘要翻译：根据一个实施例，发光器件包括发光层，第一电极，第一和第二层以及包层。第一层具有第一导电类型的第一杂质浓度，并允许载体在发光层中扩散。第二层具有高于第一杂质浓度的第一导电类型的第二杂质浓度，并且包括第一和第二表面。第一个表面是第一个表面。第二表面具有第一电极的形成区域和非形成区域。非形成区域包括平均间距不大于发射光波长的凸结构。包覆层设置在第一层和发光层之间，并且具有第一导电类型的杂质浓度。

10. 发明申请

US20130126919A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20130126919A1
公开(公告)日：2013-05-23
申请号：US13614124
申请日：2012-09-13
申请人： Hironori Yamasaki , Yukie Nishikawa
发明人： Hironori Yamasaki , Yukie Nishikawa
IPC分类号： H01L33/02 , H01L33/60
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/145 , H01L33/16 , H01L33/30 , H01L33/38 , H01L33/405 , H01L33/44
摘要： According to an embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a dielectric film and an electrode. The first semiconductor layer is capable of emitting light. The second semiconductor layer has a first major surface in contact with the first semiconductor layer and a second major surface opposite to the first major surface, the second major surface including a first region having convex structures and a second region not having the convex structures. The dielectric film is provided at least at a tip portion of the convex structures, and the electrode is provided above the second region.
摘要翻译：根据实施例，半导体发光器件包括第一半导体层，第二半导体层，电介质膜和电极。第一半导体层能够发光。第二半导体层具有与第一半导体层接触的第一主表面和与第一主表面相对的第二主表面，第二主表面包括具有凸起结构的第一区域和不具有凸起结构的第二区域。绝缘膜至少设置在凸结构的顶端部，电极设置在第二区域的上方。

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