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1. 发明授权

US08618551B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08618551B2
公开(公告)日：2013-12-31
申请号：US13219862
申请日：2011-08-29
申请人： Yukie Nishikawa , Hironori Yamasaki , Katsuyoshi Furuki , Takashi Kataoka
发明人： Yukie Nishikawa , Hironori Yamasaki , Katsuyoshi Furuki , Takashi Kataoka
IPC分类号： H01L31/0256
CPC分类号： H01L33/38 , H01L33/14 , H01L33/405 , H01L33/42 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes a substrate, a first electrode, a first conductivity type layer, a light emitting layer, a second conductivity type layer and a second electrode. The first conductivity type layer includes a first contact layer, a window layer having a lower impurity concentration than the first contact layer and a first cladding layer. The second conductivity type layer includes a second cladding layer, a current spreading layer and a second contact layer. The second electrode includes a narrow-line region on the second contact layer and a pad region electrically connected to the narrow-line region. Band gap energies of the first contact and window layers are larger than that of the light emitting layer. The first contact layer is provided selectively between the window layer and the first electrode and without overlapping the second contact layer as viewed from above.
摘要翻译：根据一个实施例，半导体发光器件包括衬底，第一电极，第一导电类型层，发光层，第二导电类型层和第二电极。第一导电类型层包括第一接触层，具有比第一接触层低的杂质浓度的窗口层和第一包层。第二导电类型层包括第二包覆层，电流扩散层和第二接触层。第二电极包括在第二接触层上的窄线区域和电连接到窄线区域的焊盘区域。第一触点和窗口层的带隙能量大于发光层的带隙能量。选择性地在窗口层和第一电极之间提供第一接触层，并且从上方观察不与第二接触层重叠。

2. 发明申请

US20120273793A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120273793A1
公开(公告)日：2012-11-01
申请号：US13219862
申请日：2011-08-29
申请人： Yukie Nishikawa , Hironori Yamasaki , Katsuyoshi Furuki , Takashi Kataoka
发明人： Yukie Nishikawa , Hironori Yamasaki , Katsuyoshi Furuki , Takashi Kataoka
IPC分类号： H01L33/60
CPC分类号： H01L33/38 , H01L33/14 , H01L33/405 , H01L33/42 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes a substrate, a first electrode, a first conductivity type layer, a light emitting layer, a second conductivity type layer and a second electrode. The first conductivity type layer includes a first contact layer, a window layer having a lower impurity concentration than the first contact layer and a first cladding layer. The second conductivity type layer includes a second cladding layer, a current spreading layer and a second contact layer. The second electrode includes a narrow-line region on the second contact layer and a pad region electrically connected to the narrow-line region. Band gap energies of the first contact and window layers are larger than that of the light emitting layer. The first contact layer is provided selectively between the window layer and the first electrode and without overlapping the second contact layer as viewed from above.
摘要翻译：根据一个实施例，半导体发光器件包括衬底，第一电极，第一导电类型层，发光层，第二导电类型层和第二电极。第一导电类型层包括第一接触层，具有比第一接触层低的杂质浓度的窗口层和第一包层。第二导电类型层包括第二包覆层，电流扩散层和第二接触层。第二电极包括在第二接触层上的窄线区域和电连接到窄线区域的焊盘区域。第一触点和窗口层的带隙能量大于发光层的带隙能量。选择性地在窗口层和第一电极之间提供第一接触层，并且从上方观察不与第二接触层重叠。

3. 发明授权

US08772809B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08772809B2
公开(公告)日：2014-07-08
申请号：US13599853
申请日：2012-08-30
申请人： Katsuyoshi Furuki , Hironori Yamasaki , Yukie Nishikawa
发明人： Katsuyoshi Furuki , Hironori Yamasaki , Yukie Nishikawa
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes a light emitting layer, a first electrode, a first conductivity type layer, a second conductivity type layer, and a second electrode. The first electrode includes a reflection metal layer. The first conductivity type layer is provided between the light emitting layer and the first electrode. The second conductivity type layer has a first surface on the light emitting layer side and a second surface on an opposite side of the first surface. The second electrode is provided on the second surface of the second conductivity type layer. A plurarity of interfaces, provided between the first conductivity type layer and the reflection metal layer, has at least first concave-convex structures. A region of the second surface of the second conductivity type layer, where the second electrode is not provided, has second concave-convex structures.
摘要翻译：根据一个实施例，半导体发光器件包括发光层，第一电极，第一导电型层，第二导电类型层和第二电极。第一电极包括反射金属层。第一导电类型层设置在发光层和第一电极之间。第二导电类型层在发光层侧具有第一表面和在第一表面的相对侧上的第二表面。第二电极设置在第二导电类型层的第二表面上。提供在第一导电类型层和反射金属层之间的界面的多个具有至少第一凹凸结构。不设置第二电极的第二导电型层的第二表面的区域具有第二凹凸结构。

4. 发明申请

US20130221367A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20130221367A1
公开(公告)日：2013-08-29
申请号：US13599853
申请日：2012-08-30
申请人： Katsuyoshi Furuki , Hironori Yamasaki , Yukie Nishikawa
发明人： Katsuyoshi Furuki , Hironori Yamasaki , Yukie Nishikawa
IPC分类号： H01L33/60 , H01L33/02
CPC分类号： H01L33/22 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes a light emitting layer, a first electrode, a first conductivity type layer, a second conductivity type layer, and a second electrode. The first electrode includes a reflection metal layer. The first conductivity type layer is provided between the light emitting layer and the first electrode. The second conductivity type layer has a first surface on the light emitting layer side and a second surface on an opposite side of the first surface. The second electrode is provided on the second surface of the second conductivity type layer. A plurarity of interfaces, provided between the first conductivity type layer and the reflection metal layer, has at least first concave-convex structures. A region of the second surface of the second conductivity type layer, where the second electrode is not provided, has second concave-convex structures.
摘要翻译：根据一个实施例，半导体发光器件包括发光层，第一电极，第一导电型层，第二导电类型层和第二电极。第一电极包括反射金属层。第一导电类型层设置在发光层和第一电极之间。第二导电类型层在发光层侧具有第一表面和在第一表面的相对侧上的第二表面。第二电极设置在第二导电类型层的第二表面上。提供在第一导电类型层和反射金属层之间的界面的多个具有至少第一凹凸结构。不设置第二电极的第二导电型层的第二表面的区域具有第二凹凸结构。

5. 发明授权

US09287448B2 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US09287448B2
公开(公告)日：2016-03-15
申请号：US13053527
申请日：2011-03-22
申请人： Hironori Yamasaki , Katsuyoshi Furuki , Yukie Nishikawa
发明人： Hironori Yamasaki , Katsuyoshi Furuki , Yukie Nishikawa
IPC分类号： H01L33/60 , H01L33/22 , H01L33/16 , H01L33/20
CPC分类号： H01L33/20 , H01L33/16 , H01L33/22
摘要： According to one embodiment, a semiconductor light emitting element includes a light emitting layer, a current spreading layer of a first conductivity type, and a pad electrode. The light emitting layer is capable of emitting light. The current spreading layer has a first surface and a second surface. The light emitting layer is disposed on a side of the first surface. A light extraction surface having convex structures of triangle cross-sectional shape and a flat surface which is a crystal growth plane are included in the second surface. The pad electrode is provided on the flat surface. One base angle of the convex structure is 90 degrees or more.
摘要翻译：根据一个实施例，半导体发光元件包括发光层，第一导电类型的电流扩展层和焊盘电极。发光层能够发光。电流扩散层具有第一表面和第二表面。发光层设置在第一表面的一侧。在第二表面中包括具有三角形截面形状的凸形结构和作为晶体生长面的平坦表面的光提取表面。焊盘电极设置在平坦表面上。凸结构的一个底角为90度以上。

6. 发明申请

US20120146072A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权
标题翻译：半导体发光元件
公开(公告)号：US20120146072A1
公开(公告)日：2012-06-14
申请号：US13053527
申请日：2011-03-22
申请人： Hironori Yamasaki , Katsuyoshi Furuki , Yukie Nishikawa
发明人： Hironori Yamasaki , Katsuyoshi Furuki , Yukie Nishikawa
IPC分类号： H01L33/60
CPC分类号： H01L33/20 , H01L33/16 , H01L33/22
摘要： According to one embodiment, a semiconductor light emitting element includes a light emitting layer, a current spreading layer of a first conductivity type, and a pad electrode. The light emitting layer is capable of emitting light. The current spreading layer has a first surface and a second surface. The light emitting layer is disposed on a side of the first surface. A light extraction surface having convex structures of triangle cross-sectional shape and a flat surface which is a crystal growth plane are included in the second surface. The pad electrode is provided on the flat surface. One base angle of the convex structure is 90 degrees or more.
摘要翻译：根据一个实施例，半导体发光元件包括发光层，第一导电类型的电流扩展层和焊盘电极。发光层能够发光。电流扩散层具有第一表面和第二表面。发光层设置在第一表面的一侧。在第二表面中包括具有三角形截面形状的凸形结构和作为晶体生长面的平坦表面的光提取表面。焊盘电极设置在平坦表面上。凸结构的一个底角为90度以上。

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