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    • 1. 发明授权
    • Resist composition and process for formation of resist patterns
    • 抗蚀剂图案的抗蚀剂组成和工艺
    • US07901865B2
    • 2011-03-08
    • US11574805
    • 2005-09-02
    • Taku HirayamaDaiju ShionoHideo Hada
    • Taku HirayamaDaiju ShionoHideo Hada
    • G03F7/004G03F7/028G03F7/039
    • G03F7/0392G03F7/0045G03F7/0048Y10S430/114
    • A resist composition that includes a base material component (A), which contains acid-dissociable, dissolution-inhibiting groups and exhibits increased alkali solubility under the action of acid, an acid generator component (B) that generates acid on exposure, and an organic solvent (C), in which the components (A) and (B) are dissolved in the organic solvent (C), wherein the base material component (A) contains a protected form (A1) of a polyhydric phenol compound (a) having two or more phenolic hydroxyl groups and a molecular weight within a range from 300 to 2,500, in which either a portion of, or all of, the phenolic hydroxyl groups are protected with acid-dissociable, dissolution-inhibiting groups, and the organic solvent (C) comprises an alcohol.
    • 一种抗蚀剂组合物,其包含基质成分(A),其含有酸解离的溶解抑制基团,并且在酸的作用下显示出增加的碱溶解性,在曝光时产生酸的酸产生剂组分(B)和有机 其中组分(A)和(B)溶解在有机溶剂(C)中的溶剂(C),其中基材组分(A)含有多元酚化合物(a)的保护形式(A1) 两个或更多个酚羟基和分子量在300-2,500的范围内,其中酚羟基的一部分或全部被酸解离的溶解抑制基团保护,并且有机溶剂( C)包含醇。
    • 4. 发明申请
    • COMPOUND, POSITIVE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
    • 化合物,阳离子组合物和形成电阻图案的方法
    • US20090202939A1
    • 2009-08-13
    • US12299371
    • 2007-03-20
    • Daiju ShionoTaku HirayamaHideo Hada
    • Daiju ShionoTaku HirayamaHideo Hada
    • G03F7/004C07C69/612G03F7/20
    • C07C69/712C07C2603/74G03F7/0045G03F7/0392
    • Disclosed are a compound that can be used for a resist composition, a positive resist composition that includes the compound, and a method for forming a resist pattern.Specifically disclosed is a compound represented by a formula (A-1). In the formula (A-1), R11 to R17 each represents an alkyl group or an aromatic hydrocarbon group; g and j each represents an integer of 1 or greater, and k and q each represents an integer of 0 or greater, provided that g+j+k+q is not greater than 5; b represents an integer of 1 or greater, and l and m each represents an integer of 0 or greater, provided that b+l+m is not greater than 4; c represents an integer of 1 or greater, and n and o each represents an integer of 0 or greater, provided that c+n+o is not greater than 4; A represents a trivalent aromatic cyclic group, alkyl group or aliphatic cyclic group, or a trivalent organic group having an aromatic cyclic group or an aliphatic cyclic group; and Z represents a group represented by a formula (z1). In the formula (z1), Y represents an alkylene group, a divalent aromatic hydrocarbon group or aliphatic cyclic group, or a divalent organic group having an aromatic hydrocarbon group or an aliphatic cyclic group; and R′ represents an acid dissociable, dissolution inhibiting group.
    • 公开了可用于抗蚀剂组合物的化合物,包含该化合物的正型抗蚀剂组合物和形成抗蚀剂图案的方法。 具体公开的是由式(A-1)表示的化合物。 式(A-1)中,R 11〜R 17表示烷基或芳香族烃基, g和j各自表示1或更大的整数,并且k和q各自表示0或更大的整数,条件是g + j + k + q不大于5; b表示1或更大的整数,并且l和m各自表示0或更大的整数,条件是b + 1 + m不大于4; c表示1或更大的整数,并且n和o各自表示0或更大的整数,条件是c + n + o不大于4; A表示三价芳族环状基团,烷基或脂肪族环状基团,或具有芳香族环状基团或脂肪族环状基团的三价有机基团, Z表示由式(z1)表示的基团。 式(z1)中,Y表示亚烷基,二价芳香族烃基或脂肪族环状基团,或具有芳香族烃基或脂肪族环状基团的二价有机基团, 并且R'表示酸解离,溶解抑制基团。
    • 5. 发明申请
    • COMPOUND, POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD
    • 化合物,阳性电阻组合物和电阻图案形成方法
    • US20090117488A1
    • 2009-05-07
    • US11994602
    • 2006-06-30
    • Takako HirosakiDaiju ShionoTaku HirayamaHideo Hada
    • Takako HirosakiDaiju ShionoTaku HirayamaHideo Hada
    • G03F7/004C07C69/76G03F7/26
    • G03F7/0397C07C67/343C07C69/712C07C2603/74G03F7/0045
    • The present invention provides a positive resist composition and a resist pattern forming method that are capable of forming a resist pattern with a reduced level of roughness. The positive resist composition includes the compound represented by the general formula (I) below. The present invention also provides the resist pattern forming method using the positive resist composition above. [wherein, in formula (I), R11 and R12 each represents, independently, an alkyl group of 1 to 10 carbon atoms or an aromatic hydrocarbon group, and may include a hetero atom in the structure thereof; R21 to R24 each represents, independently, a hydrogen atom or an acid dissociable, dissolution inhibiting group, and two of the R21 to R24 represents a hydrogen atom and the others represents an acid dissociable, dissolution inhibiting group; X is a group represented by general formulas (Ia) or (Ib) below].
    • 本发明提供能够形成具有降低的粗糙度的抗蚀剂图案的正型抗蚀剂组合物和抗蚀剂图案形成方法。 正型抗蚀剂组合物包括由下述通式(I)表示的化合物。 本发明还提供了使用上述正型抗蚀剂组合物的抗蚀剂图案形成方法。 式(I)中,R 11和R 12分别独立地表示1〜10个碳原子的烷基或芳香族烃基,其结构中可以含有杂原子; R21〜R24各自独立地表示氢原子或酸解离的溶解抑制基团,R21〜R24中的两个表示氢原子,其余表示酸解离,溶解抑制基团。 X为下述通式(Ia)或(Ib)表示的基团。
    • 7. 发明申请
    • Resist Composition and Process for Formation of Resist Patterns
    • 抗蚀剂组合物和形成抗蚀剂图案的方法
    • US20080020288A1
    • 2008-01-24
    • US11574805
    • 2005-09-02
    • Taku HirayamaDaiju ShionoHideo Hada
    • Taku HirayamaDaiju ShionoHideo Hada
    • G03C1/04G03C5/00
    • G03F7/0392G03F7/0045G03F7/0048Y10S430/114
    • A resist composition that includes a base material component (A), which contains acid-dissociable, dissolution-inhibiting groups and exhibits increased alkali solubility under the action of acid, an acid generator component (B) that generates acid on exposure, and an organic solvent (C), in which the components (A) and (B) are dissolved in the organic solvent (C), wherein the base material component (A) contains a protected form (A1) of a polyhydric phenol compound (a) having two or more phenolic hydroxyl groups and a molecular weight within a range from 300 to 2,500, in which either a portion of, or all of, the phenolic hydroxyl groups are protected with acid-dissociable, dissolution-inhibiting groups, and the organic solvent (C) comprises an alcohol.
    • 一种抗蚀剂组合物,其包含基质成分(A),其含有酸解离的溶解抑制基团,并且在酸的作用下显示出增加的碱溶解性,在曝光时产生酸的酸产生剂组分(B) 其中组分(A)和(B)溶解在有机溶剂(C)中的溶剂(C),其中基材组分(A)含有多元酚化合物(a)的保护形式(A1) 两个或更多个酚羟基和分子量在300-2,500的范围内,其中酚羟基的一部分或全部被酸解离的溶解抑制基团保护,并且有机溶剂( C)包含醇。
    • 8. 发明授权
    • Compound, positive resist composition and resist pattern forming method
    • 化合物,正光刻胶组合物和抗蚀剂图案形成方法
    • US08389197B2
    • 2013-03-05
    • US11994602
    • 2006-06-30
    • Takako HirosakiDaiju ShionoTaku HirayamaHideo Hada
    • Takako HirosakiDaiju ShionoTaku HirayamaHideo Hada
    • G03F7/004G03F7/039G03F7/20G03F7/30
    • G03F7/0397C07C67/343C07C69/712C07C2603/74G03F7/0045
    • The present invention provides a positive resist composition and a resist pattern forming method that are capable of forming a resist pattern with a reduced level of roughness. The positive resist composition includes the compound represented by the general formula (I) below. The present invention also provides the resist pattern forming method using the positive resist composition above. [wherein, in formula (I), R11 and R12 each represents, independently, an alkyl group of 1 to 10 carbon atoms or an aromatic hydrocarbon group, and may include a hetero atom in the structure thereof; R21 to R24 each represents, independently, a hydrogen atom or an acid dissociable, dissolution inhibiting group, and two of the R21 to R24 represents a hydrogen atom and the others represents an acid dissociable, dissolution inhibiting group; X is a group represented by general formulas (Ia) or (Ib) below].
    • 本发明提供能够形成具有降低的粗糙度的抗蚀剂图案的正型抗蚀剂组合物和抗蚀剂图案形成方法。 正型抗蚀剂组合物包括由下述通式(I)表示的化合物。 本发明还提供了使用上述正型抗蚀剂组合物的抗蚀剂图案形成方法。 式(I)中,R 11和R 12分别独立地表示1〜10个碳原子的烷基或芳香族烃基,其结构中可以含有杂原子; R21〜R24各自独立地表示氢原子或酸解离的溶解抑制基团,R21〜R24中的两个表示氢原子,其余表示酸解离,溶解抑制基团。 X为下述通式(Ia)或(Ib)表示的基团。