专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090117488A1 COMPOUND, POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD 失效
标题翻译：化合物，阳性电阻组合物和电阻图案形成方法
公开(公告)号：US20090117488A1
公开(公告)日：2009-05-07
申请号：US11994602
申请日：2006-06-30
申请人： Takako Hirosaki , Daiju Shiono , Taku Hirayama , Hideo Hada
发明人： Takako Hirosaki , Daiju Shiono , Taku Hirayama , Hideo Hada
IPC分类号： G03F7/004 , C07C69/76 , G03F7/26
CPC分类号： G03F7/0397 , C07C67/343 , C07C69/712 , C07C2603/74 , G03F7/0045
摘要： The present invention provides a positive resist composition and a resist pattern forming method that are capable of forming a resist pattern with a reduced level of roughness. The positive resist composition includes the compound represented by the general formula (I) below. The present invention also provides the resist pattern forming method using the positive resist composition above. [wherein, in formula (I), R11 and R12 each represents, independently, an alkyl group of 1 to 10 carbon atoms or an aromatic hydrocarbon group, and may include a hetero atom in the structure thereof; R21 to R24 each represents, independently, a hydrogen atom or an acid dissociable, dissolution inhibiting group, and two of the R21 to R24 represents a hydrogen atom and the others represents an acid dissociable, dissolution inhibiting group; X is a group represented by general formulas (Ia) or (Ib) below].
摘要翻译：本发明提供能够形成具有降低的粗糙度的抗蚀剂图案的正型抗蚀剂组合物和抗蚀剂图案形成方法。正型抗蚀剂组合物包括由下述通式（I）表示的化合物。本发明还提供了使用上述正型抗蚀剂组合物的抗蚀剂图案形成方法。式（I）中，R 11和R 12分别独立地表示1〜10个碳原子的烷基或芳香族烃基，其结构中可以含有杂原子; R21〜R24各自独立地表示氢原子或酸解离的溶解抑制基团，R21〜R24中的两个表示氢原子，其余表示酸解离，溶解抑制基团。 X为下述通式（Ia）或（Ib）表示的基团。

2. 发明授权

US08389197B2 Compound, positive resist composition and resist pattern forming method 失效
标题翻译：化合物，正光刻胶组合物和抗蚀剂图案形成方法
公开(公告)号：US08389197B2
公开(公告)日：2013-03-05
申请号：US11994602
申请日：2006-06-30
申请人： Takako Hirosaki , Daiju Shiono , Taku Hirayama , Hideo Hada
发明人： Takako Hirosaki , Daiju Shiono , Taku Hirayama , Hideo Hada
IPC分类号： G03F7/004 , G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0397 , C07C67/343 , C07C69/712 , C07C2603/74 , G03F7/0045
摘要： The present invention provides a positive resist composition and a resist pattern forming method that are capable of forming a resist pattern with a reduced level of roughness. The positive resist composition includes the compound represented by the general formula (I) below. The present invention also provides the resist pattern forming method using the positive resist composition above. [wherein, in formula (I), R11 and R12 each represents, independently, an alkyl group of 1 to 10 carbon atoms or an aromatic hydrocarbon group, and may include a hetero atom in the structure thereof; R21 to R24 each represents, independently, a hydrogen atom or an acid dissociable, dissolution inhibiting group, and two of the R21 to R24 represents a hydrogen atom and the others represents an acid dissociable, dissolution inhibiting group; X is a group represented by general formulas (Ia) or (Ib) below].
摘要翻译：本发明提供能够形成具有降低的粗糙度的抗蚀剂图案的正型抗蚀剂组合物和抗蚀剂图案形成方法。正型抗蚀剂组合物包括由下述通式（I）表示的化合物。本发明还提供了使用上述正型抗蚀剂组合物的抗蚀剂图案形成方法。式（I）中，R 11和R 12分别独立地表示1〜10个碳原子的烷基或芳香族烃基，其结构中可以含有杂原子; R21〜R24各自独立地表示氢原子或酸解离的溶解抑制基团，R21〜R24中的两个表示氢原子，其余表示酸解离，溶解抑制基团。 X为下述通式（Ia）或（Ib）表示的基团。

3. 发明申请

US20090092921A1 POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD 有权
标题翻译：积极抵抗组合和阻力图形成方法
公开(公告)号：US20090092921A1
公开(公告)日：2009-04-09
申请号：US11914451
申请日：2006-04-26
申请人： Takako Hirosaki , Daiju Shiono , Taku Hirayama
发明人： Takako Hirosaki , Daiju Shiono , Taku Hirayama
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0397
摘要： A positive resist composition includes a base material component (A) which exhibits increased alkali solubility under an action of an acid, and an acid generator component (B) which generates an acid upon exposure, wherein the base material component (A) contains a compound (A1) in which phenolic hydroxyl groups in a polyhydric phenol compound (a) containing two or more phenolic hydroxyl groups and having a molecular weight of 300 to 2,500 are protected with acid dissociable, dissolution inhibiting groups, and the compound (A1) exhibits a standard deviation (sn) of the number of protective groups per molecule of less than 1, or exhibits a standard deviation (sp) of a protection ratio (mol %) per molecule of less than 16.7.
摘要翻译：正型抗蚀剂组合物包括在酸作用下表现出增加的碱溶解性的基材组分（A）和暴露时产生酸的酸产生剂组分（B），其中所述基材组分（A）含有化合物（A1），其中含有两个或多个酚羟基并且分子量为300〜2500的多元酚化合物（a）中的酚羟基被酸解离的溶解抑制基团保护，化合物（A1）表现出每分子保护基团数目的标准偏差（sn）小于1，或每分子保护率（mol％）的标准偏差（sp）小于16.7。

4. 发明授权

US08206887B2 Positive resist composition and resist pattern forming method 有权
标题翻译：正抗蚀剂组合物和抗蚀剂图案形成方法
公开(公告)号：US08206887B2
公开(公告)日：2012-06-26
申请号：US11914451
申请日：2006-04-26
申请人： Takako Hirosaki , Daiju Shiono , Taku Hirayama
发明人： Takako Hirosaki , Daiju Shiono , Taku Hirayama
IPC分类号： G03C1/00 , G03F7/00
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0397
摘要： A positive resist composition includes a base material component (A) which exhibits increased alkali solubility under an action of an acid, and an acid generator component (B) which generates an acid upon exposure, wherein the base material component (A) contains a compound (A1) in which phenolic hydroxyl groups in a polyhydric phenol compound (a) containing two or more phenolic hydroxyl groups and having a molecular weight of 300 to 2,500 are protected with acid dissociable, dissolution inhibiting groups, and the compound (A1) exhibits a standard deviation (sn) of the number of protective groups per molecule of less than 1, or exhibits a standard deviation (sp) of a protection ratio (mol %) per molecule of less than 16.7.
摘要翻译：正型抗蚀剂组合物包括在酸作用下表现出增加的碱溶解性的基材组分（A）和暴露时产生酸的酸产生剂组分（B），其中所述基材组分（A）含有化合物（A1），其中含有两个或多个酚羟基并且分子量为300〜2500的多元酚化合物（a）中的酚羟基被酸解离的溶解抑制基团保护，化合物（A1）表现出每分子保护基团数目的标准偏差（sn）小于1，或每分子保护率（mol％）的标准偏差（sp）小于16.7。

5. 发明授权

US07981588B2 Negative resist composition and method of forming resist pattern 失效
标题翻译：抗蚀剂组合物和抗蚀剂图案形成方法
公开(公告)号：US07981588B2
公开(公告)日：2011-07-19
申请号：US11813511
申请日：2006-02-01
申请人： Takako Hirosaki , Taku Hirayama , Daiju Shiono
发明人： Takako Hirosaki , Taku Hirayama , Daiju Shiono
IPC分类号： G03C1/00
CPC分类号： G03F7/038
摘要： There are provided a resist composition capable of forming a resist pattern with high sensitivity and high resolution, and a method of forming such a resist pattern. The negative resist composition includes an alkali soluble base component (A), an acid generator component (B) that generates acid by exposure, and a cross-linking agent component (C), wherein the base component (A) includes a polyhydric phenol compound (A1) containing two or more phenolic hydroxyl groups represented by the following general formula (I), with a molecular weight of 300 to 2500.
摘要翻译：提供了能够以高灵敏度和高分辨率形成抗蚀剂图案的抗蚀剂组合物，以及形成这种抗蚀剂图案的方法。负性抗蚀剂组合物包括碱溶性基础组分（A），通过暴露产生酸的酸产生剂组分（B）和交联剂组分（C），其中所述碱性组分（A）包含多元酚化合物（A1），其含有两个或更多个由以下通式（I）表示的酚羟基，分子量为300至2500。

6. 发明申请

US20090269693A1 NEGATIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 失效
标题翻译：负极组合物和形成耐力图案的方法
公开(公告)号：US20090269693A1
公开(公告)日：2009-10-29
申请号：US11813511
申请日：2006-02-01
申请人： Takako Hirosaki , Taku Hirayama , Daiju Shiono
发明人： Takako Hirosaki , Taku Hirayama , Daiju Shiono
IPC分类号： G03F7/038 , G03F7/20
CPC分类号： G03F7/038
摘要： There are provided a resist composition capable of forming a resist pattern with high sensitivity and high resolution, and a method of forming such a resist pattern. The negative resist composition includes an alkali soluble base component (A), an acid generator component (B) that generates acid by exposure, and a cross-linking agent component (C), wherein the base component (A) includes a polyhydric phenol compound (A1) containing two or more phenolic hydroxyl groups represented by the following general formula (I), with a molecular weight of 300 to 2500.
摘要翻译：提供了能够以高灵敏度和高分辨率形成抗蚀剂图案的抗蚀剂组合物，以及形成这种抗蚀剂图案的方法。负性抗蚀剂组合物包括碱溶性基础组分（A），通过暴露产生酸的酸产生剂组分（B）和交联剂组分（C），其中所述碱性组分（A）包含多元酚化合物（A1），其含有两个或更多个由以下通式（I）表示的酚羟基，分子量为300至2500。

7. 发明申请

US20090253077A1 Anti-reflection film forming material, and method for forming resist pattern using the same 有权
标题翻译：防反射膜形成材料，以及使用其形成抗蚀剂图案的方法
公开(公告)号：US20090253077A1
公开(公告)日：2009-10-08
申请号：US12385195
申请日：2009-04-01
申请人： Yuriko Shirai , Takako Hirosaki , Masahiro Masujima , Atsushi Sawano , Jun Koshiyama
发明人： Yuriko Shirai , Takako Hirosaki , Masahiro Masujima , Atsushi Sawano , Jun Koshiyama
IPC分类号： G03F7/20 , C08F20/04 , C08L39/06 , C08L33/02 , C08K5/16 , C08K3/28
CPC分类号： C09D139/06 , C08K5/17 , C08K5/175 , C08K5/19 , G03F7/091 , Y10S438/952
摘要： The anti-reflection film forming material according to the present invention includes (a) a water soluble resin having a vinyl acetate constituent unit, and (b) a compound having a constituent unit represented by the following general formula. Wherein, R1 and R2 represent a direct bond or a methylene chain; R3 and R4 represent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or a group represented by —(CH2)n—O—R5—R6; and at least one of R3 and R4 is a group represented by —(CH2)n—O—R5—R6, wherein: R5 represents a direct bond or an alkylene chain having 1 to 10 carbon atoms which may be interrupted with —O—; R6 represents an alkyl group having 1 to 10 carbon atoms in which a portion or all hydrogen atoms are substituted with a fluorine atom; and n represents an integer of 0 to 10. Wherein, the total number of carbon atoms present in R1 and R2 is 1 or 2.
摘要翻译：根据本发明的抗反射成膜材料包括（a）具有乙酸乙烯酯构成单元的水溶性树脂，和（b）具有由以下通式表示的构成单元的化合物。其中R1和R2表示直接键或亚甲基链; R3和R4表示氢原子，具有1-10个碳原子的烷基或由 - （CH2）n-O-R5-R6表示的基团; 并且R 3和R 4中的至少一个是由 - （CH 2）n -O-R 5 -R 6表示的基团，其中：R 5表示直接键或可以被-O-间隔的具有1至10个碳原子的亚烷基链; R6表示一部分或全部氢原子被氟原子取代的碳原子数1〜10的烷基， n表示0〜10的整数。其中R1和R2中存在的碳原子总数为1或2。

8. 发明授权

US07871753B2 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07871753B2
公开(公告)日：2011-01-18
申请号：US12090826
申请日：2006-11-09
申请人： Tasuku Matsumiya , Takako Hirosaki
发明人： Tasuku Matsumiya , Takako Hirosaki
IPC分类号： G03F7/004
CPC分类号： G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： A positive resist composition of the present invention includes a resin component (A) which displays increased alkali solubility under the action of an acid, and an acid generator component (B) which generates an acid upon exposure, wherein the resin component (A) includes a structural unit (a0) containing a carboxyl group, and at least one structural unit (a1) selected from the group consisting of a structural unit represented by a general formula (a1-2) and a structural unit represented by a general formula (a1-4) shown below: (in the formula, Y represents an aliphatic cyclic group or a lower alkyl group; n represents an integer from 0 to 3; m represents 0 or 1; R represents a hydrogen atom, a halogen atom, a lower alkyl group, or a halogenated lower alkyl group; and R1′ and R2′ each independently represents a hydrogen atom or a lower alkyl group of 1 to 5 carbon atoms.).
摘要翻译：本发明的正型抗蚀剂组合物包括在酸的作用下显示增加的碱溶性的树脂组分（A）和暴露时产生酸的酸产生剂组分（B），其中树脂组分（A）包括含有羧基的结构单元（a0）和选自由通式（a1-2）表示的结构单元和由通式（a1-2）表示的结构单元）组成的组中的至少一种结构单元（a1） -4）（式中，Y表示脂肪族环状或低级烷基，n表示0〜3的整数，m表示0或1，R表示氢原子，卤原子，低级烷基或卤代低级烷基; R 1'和R 2'各自独立地表示氢原子或碳原子数为1〜5的低级烷基。

9. 发明申请

US20090162786A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：正电阻组合物和形成电阻图案的方法
公开(公告)号：US20090162786A1
公开(公告)日：2009-06-25
申请号：US12090826
申请日：2006-11-09
申请人： Tasuku Matsumiya , Takako Hirosaki
发明人： Tasuku Matsumiya , Takako Hirosaki
IPC分类号： G03F7/20 , G03F7/00
CPC分类号： G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： A positive resist composition of the present invention includes a resin component (A) which displays increased alkali solubility under the action of an acid, and an acid generator component (B) which generates an acid upon exposure, wherein the resin component (A) includes a structural unit (a0) containing a carboxyl group, and at least one structural unit (a1) selected from the group consisting of a structural unit represented by a general formula (a1-2) and a structural unit represented by a general formula (a1-4) shown below: (in the formula, Y represents an aliphatic cyclic group or a lower alkyl group; n represents an integer from 0 to 3; m represents 0 or 1; R represents a hydrogen atom, a halogen atom, a lower alkyl group, or a halogenated lower alkyl group; and R1′ and R2′ each independently represents a hydrogen atom or a lower alkyl group of 1 to 5 carbon atoms.).
摘要翻译：本发明的正型抗蚀剂组合物包括在酸的作用下显示增加的碱溶性的树脂组分（A）和暴露时产生酸的酸产生剂组分（B），其中树脂组分（A）包括含有羧基的结构单元（a0）和选自由通式（a1-2）表示的结构单元和由通式（a1-2）表示的结构单元）组成的组中的至少一种结构单元（a1） -4）（式中，Y表示脂肪族环状或低级烷基，n表示0〜3的整数，m表示0或1，R表示氢原子，卤原子，低级烷基或卤代低级烷基; R 1'和R 2'各自独立地表示氢原子或碳原子数为1〜5的低级烷基。

10. 发明申请

US20090075177A1 POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD 有权
标题翻译：积极抵抗组合和阻力图形成方法
公开(公告)号：US20090075177A1
公开(公告)日：2009-03-19
申请号：US11719179
申请日：2005-11-28
申请人： Tomoyuki Ando , Takako Hirosaki
发明人： Tomoyuki Ando , Takako Hirosaki
IPC分类号： G03F7/004 , G03F7/20 , G03F1/00
CPC分类号： G03F7/0397 , G03F7/0392 , Y10S430/106 , Y10S430/111
摘要： A positive resist composition having excellent size controllability, and a resist pattern forming method are provided. This positive resist composition contains a resin component (A) comprising an alkali soluble constituent unit (a1) which comprises a constituent unit (a11) derived from (α-methyl)hydroxystyrene, and a constituent unit (a2) which has an acid dissociable dissolution inhibiting group including an acid dissociable dissolution inhibiting group (II) represented by the following general formula (II) and/or a specific chain acid dissociable dissolution inhibiting group (III); an acid generator component (B) which generates an acid upon exposure; and preferably contains an aromatic amine (C).
摘要翻译：提供具有优异的尺寸控制性的正型抗蚀剂组合物和抗蚀剂图案形成方法。该正性抗蚀剂组合物含有包含由（α-甲基）羟基苯乙烯衍生的构成单元（a11）的碱溶性结构单元（a1）和具有酸解离溶解性的结构单元（a2）的树脂成分（A）包括由以下通式（II）表示的酸解离溶解抑制基团（II）和/或特定链酸解离溶解抑制基团（III）的组合物。酸性发生剂组分（B），其在暴露时产生酸; 优选含有芳香族胺（C）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式