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1. 发明授权

US08325254B2 Solid-state imaging device, method for manufacturing the same, and electronic apparatus 有权
标题翻译：固态成像装置及其制造方法以及电子装置
公开(公告)号：US08325254B2
公开(公告)日：2012-12-04
申请号：US12604523
申请日：2009-10-23
申请人： Takeshi Yanagita , Keiji Mabuchi , Susumu Inoue
发明人： Takeshi Yanagita , Keiji Mabuchi , Susumu Inoue
IPC分类号： H04N3/14 , H04N5/225 , H01L27/146 , H01L21/00
CPC分类号： H01L27/14623 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14643
摘要： A solid-state imaging device includes an effective pixel portion in which a plurality of pixels including photoelectric conversion elements are arrayed; and a nonconductive interpixel light-shielding film that is placed in the effective pixel portion and that shields areas between the pixels.
摘要翻译：一种固态成像装置，包括排列具有光电转换元件的多个像素的有效像素部，以及放置在有效像素部分中并遮蔽像素之间的区域的非导电像素间屏蔽膜。

2. 发明申请

US20100110271A1 SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS 有权
标题翻译：固态成像装置，其制造方法和电子装置
公开(公告)号：US20100110271A1
公开(公告)日：2010-05-06
申请号：US12604523
申请日：2009-10-23
申请人： Takeshi Yanagita , Keiji Mabuchi , Susumu Inoue
发明人： Takeshi Yanagita , Keiji Mabuchi , Susumu Inoue
IPC分类号： H04N5/225 , H01L31/0232 , H01L21/00
CPC分类号： H01L27/14623 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14643
摘要： A solid-state imaging device includes an effective pixel portion in which a plurality of pixels including photoelectric conversion elements are arrayed; and a nonconductive interpixel light-shielding film that is placed in the effective pixel portion and that shields areas between the pixels.
摘要翻译：一种固态成像装置，包括排列具有光电转换元件的多个像素的有效像素部，以及放置在有效像素部分中并遮蔽像素之间的区域的非导电像素间屏蔽膜。

3. 发明授权

US08872953B2 Solid-state imaging device, manufacturing method thereof, camera, and electronic device 有权
标题翻译：固态成像装置，其制造方法，相机和电子装置
公开(公告)号：US08872953B2
公开(公告)日：2014-10-28
申请号：US12910068
申请日：2010-10-22
申请人： Yorito Sakano , Takashi Abe , Keiji Mabuchi , Ryoji Suzuki , Hiroyuki Mori , Yoshiharu Kudoh , Fumihiko Koga , Takeshi Yanagita , Kazunobu Ota
发明人： Yorito Sakano , Takashi Abe , Keiji Mabuchi , Ryoji Suzuki , Hiroyuki Mori , Yoshiharu Kudoh , Fumihiko Koga , Takeshi Yanagita , Kazunobu Ota
IPC分类号： H04N3/14 , H04N5/335 , H01L27/146 , H04N5/3745
CPC分类号： H04N5/361 , H01L27/14609 , H01L27/14612 , H01L27/14614 , H01L27/14623 , H01L27/14636 , H01L27/14641 , H01L27/14643 , H01L27/14689 , H04N5/2176 , H04N5/374 , H04N5/37457 , H04N5/378
摘要： A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode.
摘要翻译：提供了一种固态成像装置，其包括：光电二极管，其具有为每个像素分割形成的第一导电类型半导体区域; 在与所述光电二极管相邻的区域经由栅极绝缘层在所述半导体衬底上形成的第一导电型转移栅电极，以及发射并累积在所述光电二极管中的信号电荷; 读取对应于信号电荷或信号电荷的电压的信号读取单元; 以及反射层感应电极，其在覆盖所述光电二极管的一部分或全部的区域中，经由所述栅极绝缘层在所述半导体衬底上形成，并且由具有功函数的导体或半导体构成。通过反转层感应电极在半导体区域的反型层感应电极侧的表面上积累第二导电型载体而形成反转层。

4. 发明授权

US08570412B2 Solid state image sensor, method for driving a solid state image sensor, imaging apparatus, and electronic device 有权
标题翻译：固态图像传感器，用于驱动固态图像传感器的方法，成像装置和电子设备
公开(公告)号：US08570412B2
公开(公告)日：2013-10-29
申请号：US12603059
申请日：2009-10-21
申请人： Takeshi Yanagita , Keiji Mabuchi , Hiroaki Ishiwata
发明人： Takeshi Yanagita , Keiji Mabuchi , Hiroaki Ishiwata
IPC分类号： H04N5/335
CPC分类号： H04N5/37457 , H01L27/14603 , H01L27/14609 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H04N5/3532 , H04N5/3591 , H04N5/3698 , H04N5/374 , H04N5/3742 , H04N5/378
摘要： A solid state image sensor includes a pixel array, as well as charge-to-voltage converters, reset gates, and amplifiers each shared by a plurality of pixels in the array. The voltage level of the reset gate power supply is set higher than the voltage level of the amplifier power supply. Additionally, charge overflowing from photodetectors in the pixels may be discarded into the charge-to-voltage converters. The image sensor may also include a row scanner configured such that, while scanning a row in the pixel array to read out signals therefrom, the row scanner resets the charge in the photodetectors of the pixels sharing a charge-to-voltage converter with pixels on the readout row. The charge reset is conducted simultaneously with or prior to reading out the signals from the pixels on the readout row.
摘要翻译：固态图像传感器包括像素阵列以及由阵列中的多个像素共享的电荷 - 电压转换器，复位门和放大器。复位栅极电源的电压设定为高于放大器电源的电压电平。此外，从像素中的光电检测器溢出的电荷可能被丢弃到电荷 - 电压转换器中。图像传感器还可以包括行扫描器，其被配置为使得在扫描像素阵列中的行以从其中读出信号的同时，行扫描器在共享具有像素的电荷到电压转换器的像素的光电检测器中复位电荷读出行。在从读出行上的像素读出信号的同时或之前进行电荷复位。

5. 发明授权

US08553124B2 Solid-state image capturing device, method of driving solid-state image capturing device, and image capturing apparatus 有权
公开(公告)号：US08553124B2
公开(公告)日：2013-10-08
申请号：US12690537
申请日：2010-01-20
申请人： Keiji Mabuchi , Takeshi Yanagita , Yorito Sakano
发明人： Keiji Mabuchi , Takeshi Yanagita , Yorito Sakano
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/2353 , H01L27/14656 , H04N5/3591
摘要： A solid-state image capturing device includes: a pixel array unit including plural pixels each converting light selectively incident through a mechanical shutter into charges to be stored in a storage portion and having an overflow path through which charges exceeding a saturation charge amount are discharged; and a driving unit starting an exposure by simultaneously resetting all pixels of the pixel array unit, maintaining the overflow path in an opened state during the exposure period, and closing the overflow path during a period while signals are read from the pixels after ending the exposure by closing the mechanical shutter.

6. 发明申请

US20110058075A1 SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE 审中-公开
标题翻译：固态成像装置及其制造方法及电子装置
公开(公告)号：US20110058075A1
公开(公告)日：2011-03-10
申请号：US12869933
申请日：2010-08-27
申请人： Takeshi Yanagita , Keiji Mabuchi
发明人： Takeshi Yanagita , Keiji Mabuchi
IPC分类号： H04N5/335 , H01L31/18
CPC分类号： H01L27/14623 , H01L27/14609 , H01L27/14621 , H01L27/14641 , H01L27/14643 , H01L27/14685 , H04N5/37457 , H04N9/045
摘要： A solid-state imaging device includes: photoelectric conversion units provided on an imaging face of a semiconductor substrate; a color filter provided on the imaging face; and a light shielding portion provided on the imaging face; wherein photoelectric conversion units are arrayed on the imaging face in a first direction a second direction; and wherein the color filter includes a first filter layer having high light transmissivity regarding a first wavelength band, and a second filter layer having high light transmissivity regarding a second wavelength band, with the first and second filter layers arrayed above the photoelectric conversion units arrayed in the first direction so as to extend in the first direction and be arrayed adjacently in the second direction; and wherein the light shielding portion extends in the first direction between the photoelectric conversion units arrayed in the second direction, between the first filter layer and the second filter layer.
摘要翻译：固态成像装置包括：设置在半导体衬底的成像面上的光电转换单元; 设置在成像面上的滤色器; 以及设在所述摄像面上的遮光部; 其中光电转换单元沿第一方向排列在成像面上的第二方向上; 并且其中所述滤色器包括关于第一波长带具有高透光率的第一滤光层和关于第二波长带的具有高透光率的第二滤光层，其中所述第一和第二滤光层排列在所述光电转换单元的上方所述第一方向沿所述第一方向延伸并且在所述第二方向上相邻排列; 并且其中所述遮光部分沿所述第一方向在所述第二方向排列的所述光电转换单元之间，在所述第一过滤层和所述第二过滤层之间延伸。

7. 发明申请

US20100188541A1 SOLID-STATE IMAGE CAPTURING DEVICE, METHOD OF DRIVING SOLID-STATE IMAGE CAPTURING DEVICE, AND IMAGE CAPTURING APPARATUS 有权
标题翻译：固态图像捕获装置，驱动固态图像捕获装置的方法和图像捕获装置
公开(公告)号：US20100188541A1
公开(公告)日：2010-07-29
申请号：US12690537
申请日：2010-01-20
申请人： Keiji Mabuchi , Takeshi Yanagita , Yorito Sakano
发明人： Keiji Mabuchi , Takeshi Yanagita , Yorito Sakano
IPC分类号： H04N5/335
CPC分类号： H04N5/2353 , H01L27/14656 , H04N5/3591
摘要： A solid-state image capturing device includes: a pixel array unit including plural pixels each converting light selectively incident through a mechanical shutter into charges to be stored in a storage portion and having an overflow path through which charges exceeding a saturation charge amount are discharged; and a driving unit starting an exposure by simultaneously resetting all pixels of the pixel array unit, maintaining the overflow path in an opened state during the exposure period, and closing the overflow path during a period while signals are read from the pixels after ending the exposure by closing the mechanical shutter.
摘要翻译：固态图像捕获装置包括：像素阵列单元，包括多个像素，每个像素将通过机械遮光器有选择地入射的光转换成要存储在存储部分中的电荷，并且具有溢出路径，电荷超过饱和电荷量的电荷被放电; 以及驱动单元，通过同时复位像素阵列单元的所有像素来开始曝光，在曝光周期期间将溢出路径保持在打开状态，并且在结束曝光之后从像素读取信号期间关闭溢出路径通过关闭机械快门。

8. 发明申请

US20110102620A1 SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, CAMERA, AND ELECTRONIC DEVICE 有权
标题翻译：固态成像装置，其制造方法，相机和电子装置
公开(公告)号：US20110102620A1
公开(公告)日：2011-05-05
申请号：US12910068
申请日：2010-10-22
申请人： Yorito Sakano , Takashi Abe , Keiji Mabuchi , Ryoji Suzuki , Hiroyuki Mori , Yoshiharu Kudoh , Fumihiko Koga , Takeshi Yanagita , Kazunobu Ota
发明人： Yorito Sakano , Takashi Abe , Keiji Mabuchi , Ryoji Suzuki , Hiroyuki Mori , Yoshiharu Kudoh , Fumihiko Koga , Takeshi Yanagita , Kazunobu Ota
IPC分类号： H04N5/228 , H01L31/06 , H01L31/18 , H03F3/08 , H01L27/146
CPC分类号： H04N5/361 , H01L27/14609 , H01L27/14612 , H01L27/14614 , H01L27/14623 , H01L27/14636 , H01L27/14641 , H01L27/14643 , H01L27/14689 , H04N5/2176 , H04N5/374 , H04N5/37457 , H04N5/378
摘要： A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode.
摘要翻译：提供了一种固态成像装置，其包括：光电二极管，其具有为每个像素分割形成的第一导电类型半导体区域; 在与所述光电二极管相邻的区域经由栅极绝缘层在所述半导体衬底上形成的第一导电型转移栅电极，以及发射并累积在所述光电二极管中的信号电荷; 读取对应于信号电荷或信号电荷的电压的信号读取单元; 以及反射层感应电极，其在覆盖所述光电二极管的一部分或全部的区域中，经由所述栅极绝缘层在所述半导体衬底上形成，并且由具有功函数的导体或半导体构成。通过反转层感应电极在半导体区域的反型层感应电极侧的表面上积累第二导电型载体而形成反转层。

9. 发明申请

US20100097508A1 SOLID STATE IMAGE SENSOR, METHOD FOR DRIVING A SOLID STATE IMAGE SENSOR, IMAGING APPARATUS, AND ELECTRONIC DEVICE 有权
标题翻译：固态图像传感器，用于驱动固态图像传感器，成像装置和电子装置的方法
公开(公告)号：US20100097508A1
公开(公告)日：2010-04-22
申请号：US12603059
申请日：2009-10-21
申请人： Takeshi Yanagita , Keiji Mabuchi , Hiroaki Ishiwata
发明人： Takeshi Yanagita , Keiji Mabuchi , Hiroaki Ishiwata
IPC分类号： H04N5/335
CPC分类号： H04N5/37457 , H01L27/14603 , H01L27/14609 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H04N5/3532 , H04N5/3591 , H04N5/3698 , H04N5/374 , H04N5/3742 , H04N5/378
摘要： A solid state image sensor includes a pixel array, as well as charge-to-voltage converters, reset gates, and amplifiers each shared by a plurality of pixels in the array. The voltage level of the reset gate power supply is set higher than the voltage level of the amplifier power supply. Additionally, charge overflowing from photodetectors in the pixels may be discarded into the charge-to-voltage converters. The image sensor may also include a row scanner configured such that, while scanning a row in the pixel array to read out signals therefrom, the row scanner resets the charge in the photodetectors of the pixels sharing a charge-to-voltage converter with pixels on the readout row. The charge reset is conducted simultaneously with or prior to reading out the signals from the pixels on the readout row.
摘要翻译：固态图像传感器包括像素阵列以及由阵列中的多个像素共享的电荷 - 电压转换器，复位门和放大器。复位栅极电源的电压设定为高于放大器电源的电压电平。此外，从像素中的光电检测器溢出的电荷可能被丢弃到电荷 - 电压转换器中。图像传感器还可以包括行扫描器，其被配置为使得在扫描像素阵列中的行以从其中读出信号的同时，行扫描器在共享具有像素的电荷到电压转换器的像素的光电检测器中复位电荷读出行。在从读出行上的像素读出信号的同时或之前进行电荷复位。

10. 发明申请

US20140054662A1 SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE, AND ELECTRONIC DEVICE 有权
标题翻译：固态成像装置，固态成像装置的制造方法和电子装置
公开(公告)号：US20140054662A1
公开(公告)日：2014-02-27
申请号：US14001652
申请日：2012-02-23
申请人： Takeshi Yanagita , Itaru Oshiyama , Takayuki Enomoto , Harumi Ikeda , Shinichiro Izawa , Atsuhiko Yamamoto , Kazunobu Ota
发明人： Takeshi Yanagita , Itaru Oshiyama , Takayuki Enomoto , Harumi Ikeda , Shinichiro Izawa , Atsuhiko Yamamoto , Kazunobu Ota
IPC分类号： H01L27/146
CPC分类号： H01L27/146 , H01L27/1461 , H01L27/14612 , H01L27/14614 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H01L27/14645 , H01L27/14685 , H01L27/14689
摘要： The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate 12 and multiple photoelectric converters 40 that are formed on the substrate 12, an insulating film 21 forms an embedded element separating unit 19. The element separating unit 19 is configured of an insulating film 20 having a fixed charge that is formed so as to coat the inner wall face of a groove portion 30, within the groove portion 30 which is formed in the depth direction from the light input side of the substrate 12.
摘要翻译：本技术涉及固态成像装置，固态成像装置的制造方法和电子装置，其可以提供具有进一步改善的特征的固态成像装置，例如减少的光学混色等。此外，提供了使用其固态成像装置的电子装置。根据具有形成在基板12上的基板12和多个光电转换器40的固态成像装置，绝缘膜21形成嵌入元件分离单元19.元件分离单元19由绝缘膜20构成，绝缘膜20具有形成为在从基板12的光输入侧在深度方向形成的槽部30内形成为涂覆槽部30的内壁面的固定电荷。

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