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1. 发明授权

US08872953B2 Solid-state imaging device, manufacturing method thereof, camera, and electronic device 有权
标题翻译：固态成像装置，其制造方法，相机和电子装置
公开(公告)号：US08872953B2
公开(公告)日：2014-10-28
申请号：US12910068
申请日：2010-10-22
申请人： Yorito Sakano , Takashi Abe , Keiji Mabuchi , Ryoji Suzuki , Hiroyuki Mori , Yoshiharu Kudoh , Fumihiko Koga , Takeshi Yanagita , Kazunobu Ota
发明人： Yorito Sakano , Takashi Abe , Keiji Mabuchi , Ryoji Suzuki , Hiroyuki Mori , Yoshiharu Kudoh , Fumihiko Koga , Takeshi Yanagita , Kazunobu Ota
IPC分类号： H04N3/14 , H04N5/335 , H01L27/146 , H04N5/3745
CPC分类号： H04N5/361 , H01L27/14609 , H01L27/14612 , H01L27/14614 , H01L27/14623 , H01L27/14636 , H01L27/14641 , H01L27/14643 , H01L27/14689 , H04N5/2176 , H04N5/374 , H04N5/37457 , H04N5/378
摘要： A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode.
摘要翻译：提供了一种固态成像装置，其包括：光电二极管，其具有为每个像素分割形成的第一导电类型半导体区域; 在与所述光电二极管相邻的区域经由栅极绝缘层在所述半导体衬底上形成的第一导电型转移栅电极，以及发射并累积在所述光电二极管中的信号电荷; 读取对应于信号电荷或信号电荷的电压的信号读取单元; 以及反射层感应电极，其在覆盖所述光电二极管的一部分或全部的区域中，经由所述栅极绝缘层在所述半导体衬底上形成，并且由具有功函数的导体或半导体构成。通过反转层感应电极在半导体区域的反型层感应电极侧的表面上积累第二导电型载体而形成反转层。

2. 发明申请

US20110102620A1 SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, CAMERA, AND ELECTRONIC DEVICE 有权
标题翻译：固态成像装置，其制造方法，相机和电子装置
公开(公告)号：US20110102620A1
公开(公告)日：2011-05-05
申请号：US12910068
申请日：2010-10-22
申请人： Yorito Sakano , Takashi Abe , Keiji Mabuchi , Ryoji Suzuki , Hiroyuki Mori , Yoshiharu Kudoh , Fumihiko Koga , Takeshi Yanagita , Kazunobu Ota
发明人： Yorito Sakano , Takashi Abe , Keiji Mabuchi , Ryoji Suzuki , Hiroyuki Mori , Yoshiharu Kudoh , Fumihiko Koga , Takeshi Yanagita , Kazunobu Ota
IPC分类号： H04N5/228 , H01L31/06 , H01L31/18 , H03F3/08 , H01L27/146
CPC分类号： H04N5/361 , H01L27/14609 , H01L27/14612 , H01L27/14614 , H01L27/14623 , H01L27/14636 , H01L27/14641 , H01L27/14643 , H01L27/14689 , H04N5/2176 , H04N5/374 , H04N5/37457 , H04N5/378
摘要： A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode.
摘要翻译：提供了一种固态成像装置，其包括：光电二极管，其具有为每个像素分割形成的第一导电类型半导体区域; 在与所述光电二极管相邻的区域经由栅极绝缘层在所述半导体衬底上形成的第一导电型转移栅电极，以及发射并累积在所述光电二极管中的信号电荷; 读取对应于信号电荷或信号电荷的电压的信号读取单元; 以及反射层感应电极，其在覆盖所述光电二极管的一部分或全部的区域中，经由所述栅极绝缘层在所述半导体衬底上形成，并且由具有功函数的导体或半导体构成。通过反转层感应电极在半导体区域的反型层感应电极侧的表面上积累第二导电型载体而形成反转层。

3. 发明授权

US08866941B2 Solid state imaging device with wiring lines shifted for pupil correction and simplified wiring pattern and method of manufacturing the same 有权
标题翻译：具有移位用于光瞳校正和简化布线图案的布线的固态成像装置及其制造方法
公开(公告)号：US08866941B2
公开(公告)日：2014-10-21
申请号：US13104604
申请日：2011-05-10
申请人： Takashi Abe , Ryoji Suzuki , Yoshiharu Kudoh
发明人： Takashi Abe , Ryoji Suzuki , Yoshiharu Kudoh
IPC分类号： H04N9/64 , H01L27/146
CPC分类号： H01L27/14603 , H01L27/14636
摘要： A solid-state imaging device is provided. The solid-state imaging device includes an imaging area that includes arrayed pixels having photoelectric converting units and transistor elements; and a peripheral circuit, in which a wiring line in the imaging area that is shifted based on pupil correction amount and a wiring line in the peripheral circuit that is not shifted are connected through a connection expanded portion integrally formed with one or both of the wiring lines.
摘要翻译：提供固态成像装置。固态成像装置包括具有光电转换单元和晶体管元件的排列像素的成像区域; 以及外围电路，其中基于瞳孔校正量移位的成像区域中的布线和外围电路中未移位的布线通过与一个或两个布线一体形成的连接扩展部分连接线条。

4. 发明申请

US20070273779A1 Solid-state imaging device, method of manufacturing the same and camera module 有权
标题翻译：固态成像装置，制造方法和相机模块
公开(公告)号：US20070273779A1
公开(公告)日：2007-11-29
申请号：US11788925
申请日：2007-04-23
申请人： Takashi Abe , Ryoji Suzuki , Yoshiharu Kudoh
发明人： Takashi Abe , Ryoji Suzuki , Yoshiharu Kudoh
IPC分类号： H04N5/335
CPC分类号： H01L27/14603 , H01L27/14636
摘要： A solid-state imaging device is provided. The solid-state imaging device includes an imaging area that includes arrayed pixels having photoelectric converting units and transistor elements; and a peripheral circuit, in which a wiring line in the imaging area that is shifted based on pupil correction amount and a wiring line in the peripheral circuit that is not shifted are connected through a connection expanded portion integrally formed with one or both of the wiring lines.
摘要翻译：提供固态成像装置。固态成像装置包括具有光电转换单元和晶体管元件的排列像素的成像区域; 以及外围电路，其中基于瞳孔校正量移位的成像区域中的布线和外围电路中未移位的布线通过与一个或两个布线一体形成的连接扩展部分连接线条。

5. 发明授权

US07940328B2 Solid state imaging device having wirings with lateral extensions 有权
标题翻译：具有侧向延伸线的固态成像装置
公开(公告)号：US07940328B2
公开(公告)日：2011-05-10
申请号：US11788925
申请日：2007-04-23
申请人： Takashi Abe , Ryoji Suzuki , Yoshiharu Kudoh
发明人： Takashi Abe , Ryoji Suzuki , Yoshiharu Kudoh
IPC分类号： H04N5/225
CPC分类号： H01L27/14603 , H01L27/14636
摘要： A solid-state imaging device is provided. The solid-state imaging device includes an imaging area that includes arrayed pixels having photoelectric converting units and transistor elements; and a peripheral circuit, in which a wiring line in the imaging area that is shifted based on pupil correction amount and a wiring line in the peripheral circuit that is not shifted are connected through a connection expanded portion integrally formed with one or both of the wiring lines.
摘要翻译：提供固态成像装置。固态成像装置包括具有光电转换单元和晶体管元件的排列像素的成像区域; 以及外围电路，其中基于瞳孔校正量移位的成像区域中的布线和外围电路中未移位的布线通过与一个或两个布线一体形成的连接扩展部分连接线条。

6. 发明申请

US20110285901A1 SOLID STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME AND CAMERA MODULE 有权
标题翻译：固态成像装置，其制造方法和相机模块
公开(公告)号：US20110285901A1
公开(公告)日：2011-11-24
申请号：US13104604
申请日：2011-05-10
申请人： Takashi Abe , Ryoji Suzuki , Yoshiharu Kudoh
发明人： Takashi Abe , Ryoji Suzuki , Yoshiharu Kudoh
IPC分类号： H04N5/225 , H01L31/18 , H01L27/146
CPC分类号： H01L27/14603 , H01L27/14636
摘要： A solid-state imaging device is provided. The solid-state imaging device includes an imaging area that includes arrayed pixels having photoelectric converting units and transistor elements; and a peripheral circuit, in which a wiring line in the imaging area that is shifted based on pupil correction amount and a wiring line in the peripheral circuit that is not shifted are connected through a connection expanded portion integrally formed with one or both of the wiring lines.
摘要翻译：提供固态成像装置。固态成像装置包括具有光电转换单元和晶体管元件的排列像素的成像区域; 以及外围电路，其中基于瞳孔校正量移位的成像区域中的布线和外围电路中未移位的布线通过与一个或两个布线一体形成的连接扩展部分连接线条。

7. 发明申请

US20100225775A1 SOLID-STATE IMAGE CAPTURING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGE CAPTURING DEVICE, AND IMAGE CAPTURING APPARATUS 有权
标题翻译：固态图像捕获装置，制造固态图像捕获装置的方法和图像捕获装置
公开(公告)号：US20100225775A1
公开(公告)日：2010-09-09
申请号：US12711345
申请日：2010-02-24
申请人： Fumihiko Koga , Yoshiharu Kudoh
发明人： Fumihiko Koga , Yoshiharu Kudoh
IPC分类号： H04N5/228 , H01L31/18 , H04N5/335
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/1463
摘要： A solid-state image capturing device includes, in a semiconductor substrate, a photoelectric conversion section which performs photoelectric conversion on incident light to obtain signal charges; a pixel transistor section which outputs the signal charges generated in the photoelectric conversion section; a peripheral circuit section which is formed in the periphery of a pixel section including the photoelectric conversion section and the pixel transistor section; and isolation areas which electrically separate the photoelectric conversion section, the pixel transistor section, and the peripheral circuit section from each other. The isolation areas in the periphery of the pixel transistor section each have an insulating section formed higher than a surface of the semiconductor substrate. A first gate electrode of a transistor of the pixel transistor section is formed between the insulating sections and on the semiconductor substrate with a gate insulating film interposed therebetween.
摘要翻译：固体摄像装置在半导体衬底中包括对入射光进行光电转换以获得信号电荷的光电转换部; 输出在光电转换部中生成的信号电荷的像素晶体管部; 外围电路部，形成在包括光电转换部和像素晶体管部的像素部的周围; 以及将光电转换部，像素晶体管部和外围电路部彼此电分离的隔离区域。像素晶体管部分周围的隔离区域各自具有比半导体衬底的表面高的绝缘部分。像素晶体管部分的晶体管的第一栅电极形成在绝缘部分和半导体衬底之间，其间插入有栅极绝缘膜。

8. 发明授权

US08368161B2 Solid-state image capturing device, method of manufacturing solid-state image capturing device, and image capturing apparatus 有权
标题翻译：固体摄像装置，固体摄像装置的制造方法以及摄像装置
公开(公告)号：US08368161B2
公开(公告)日：2013-02-05
申请号：US12711345
申请日：2010-02-24
申请人： Fumihiko Koga , Yoshiharu Kudoh
发明人： Fumihiko Koga , Yoshiharu Kudoh
IPC分类号： H01L21/337
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/1463
摘要： A solid-state image capturing device includes, in a semiconductor substrate, a photoelectric conversion section which performs photoelectric conversion on incident light to obtain signal charges; a pixel transistor section which outputs the signal charges generated in the photoelectric conversion section; a peripheral circuit section which is formed in the periphery of a pixel section including the photoelectric conversion section and the pixel transistor section; and isolation areas which electrically separate the photoelectric conversion section, the pixel transistor section, and the peripheral circuit section from each other. The isolation areas in the periphery of the pixel transistor section each have an insulating section formed higher than a surface of the semiconductor substrate. A first gate electrode of a transistor of the pixel transistor section is formed between the insulating sections and on the semiconductor substrate with a gate insulating film interposed therebetween.
摘要翻译：固体摄像装置在半导体衬底中包括对入射光进行光电转换以获得信号电荷的光电转换部; 输出在光电转换部中生成的信号电荷的像素晶体管部; 外围电路部，形成在包括光电转换部和像素晶体管部的像素部的周围; 以及将光电转换部，像素晶体管部和外围电路部彼此电分离的隔离区域。像素晶体管部分周围的隔离区域各自具有比半导体衬底的表面高的绝缘部分。像素晶体管部分的晶体管的第一栅电极形成在绝缘部分和半导体衬底之间，其间插入有栅极绝缘膜。

9. 发明授权

US08564033B2 Solid-state imaging device and method for manufacturing the same 有权
公开(公告)号：US08564033B2
公开(公告)日：2013-10-22
申请号：US12345876
申请日：2008-12-30
申请人： Toshihiko Hayashi , Yoshiharu Kudoh
发明人： Toshihiko Hayashi , Yoshiharu Kudoh
IPC分类号： H01L31/0216
CPC分类号： H01L27/14636 , H01L27/14623 , H01L27/14625 , H01L27/14687 , H01L27/14689 , H01L31/0216 , H01L31/0232 , H01L31/18
摘要： A solid-state imaging device includes: a light-receiving pixel part configured to be formed on a semiconductor substrate; a black-level reference pixel part configured to be formed on the semiconductor substrate; and a multilayer interconnect part configured to be provided over the semiconductor substrate. The multilayer interconnect part includes an insulating layer formed over the semiconductor substrate and metal interconnect layers formed as a plurality of layers in the insulating layer. The multilayer interconnect part has a first light-blocking film formed above an area between first metal interconnects of a first metal interconnect layer as one of the metal interconnect layers above the black-level reference pixel part, and a second light-blocking film that is connected to the first light-blocking film and is formed of a second metal interconnect layer over the first metal interconnect layer.

10. 发明授权

US07812878B2 Solid-state imaging device and imaging apparatus 有权
标题翻译：固态成像装置和成像装置
公开(公告)号：US07812878B2
公开(公告)日：2010-10-12
申请号：US11200687
申请日：2005-08-10
申请人： Yoshiharu Kudoh
发明人： Yoshiharu Kudoh
IPC分类号： H04N5/335
CPC分类号： H04N5/37457 , H01L27/14603 , H01L27/14609 , H01L27/14621 , H01L27/14641 , H04N5/347
摘要： A solid-state imaging device with a multi-pixel sharing structure, wherein the area of each photoelectric conversion element can be secured independent of a reduction in area of each pixel. A solid-state imaging device including photoelectric conversion elements arranged in a two-dimensional array and voltage conversion elements for converting charge produced by photoelectric conversion through the corresponding photoelectric conversion elements into voltage.
摘要翻译：一种具有多像素共享结构的固态成像装置，其中可以独立于每个像素的面积的减小来确保每个光电转换元件的面积。一种固态成像装置，包括以二维阵列布置的光电转换元件和用于将通过相应的光电转换元件的光电转换产生的电荷转换为电压的电压转换元件。

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