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1. 发明授权

US06930335B2 Field effect transistor with metal oxide gate insulator and sidewall insulating film 有权
公开(公告)号：US06930335B2
公开(公告)日：2005-08-16
申请号：US10397308
申请日：2003-03-27
申请人： Takeshi Yamaguchi , Hideki Satake , Noburu Fukushima
发明人： Takeshi Yamaguchi , Hideki Satake , Noburu Fukushima
IPC分类号： H01L29/78 , H01L21/268 , H01L21/28 , H01L21/314 , H01L21/316 , H01L21/336 , H01L29/49 , H01L29/51 , H01L29/76
CPC分类号： H01L29/517 , H01L21/268 , H01L21/28194 , H01L21/28202 , H01L21/3143 , H01L21/31604 , H01L21/31612 , H01L29/495 , H01L29/4966 , H01L29/51 , H01L29/66477 , H01L29/6656
摘要： Provided is a semiconductor device including a silicon substrate, a gate insulator disposed on the silicon substrate and containing a metal oxide, a gate electrode disposed on the gate insulator, and a sidewall insulating film disposed on a side of the gate insulator and the gate electrode and containing aluminum, silicon, oxygen and nitrogen.

2. 发明申请

US20050215035A1 Field effect transistor with metal oxide gate insulator and sidewall insulating film 审中-公开
标题翻译：具有金属氧化物栅极绝缘体和侧壁绝缘膜的场效应晶体管
公开(公告)号：US20050215035A1
公开(公告)日：2005-09-29
申请号：US11136492
申请日：2005-05-25
申请人： Takeshi Yamaguchi , Hideki Satake , Noburu Fukushima
发明人： Takeshi Yamaguchi , Hideki Satake , Noburu Fukushima
IPC分类号： H01L29/78 , H01L21/268 , H01L21/28 , H01L21/314 , H01L21/316 , H01L21/336 , H01L29/49 , H01L29/51 , H01L21/04 , H01L21/84
CPC分类号： H01L29/517 , H01L21/268 , H01L21/28194 , H01L21/28202 , H01L21/3143 , H01L21/31604 , H01L21/31612 , H01L29/495 , H01L29/4966 , H01L29/51 , H01L29/66477 , H01L29/6656
摘要： Provided is a semiconductor device including a silicon substrate, a gate insulator disposed on the silicon substrate and containing a metal oxide, a gate electrode disposed on the gate insulator, and a sidewall insulating film disposed on a side of the gate insulator and the gate electrode and containing aluminum, silicon, oxygen and nitrogen.
摘要翻译：提供了一种半导体器件，其包括硅衬底，设置在硅衬底上并包含金属氧化物的栅极绝缘体，设置在栅极绝缘体上的栅极电极和设置在栅极绝缘体和栅电极的侧面上的侧壁绝缘膜并含有铝，硅，氧和氮。

3. 发明授权

US06914312B2 Field effect transistor having a MIS structure and method of fabricating the same 有权
标题翻译：具有MIS结构的场效应晶体管及其制造方法
公开(公告)号：US06914312B2
公开(公告)日：2005-07-05
申请号：US10396416
申请日：2003-03-26
申请人： Yukie Nishikawa , Noburu Fukushima , Takeshi Yamaguchi , Hideki Satake
发明人： Yukie Nishikawa , Noburu Fukushima , Takeshi Yamaguchi , Hideki Satake
IPC分类号： H01L21/318 , H01L21/28 , H01L21/8247 , H01L27/115 , H01L29/51 , H01L29/78 , H01L29/788 , H01L29/792 , H01L29/76 , H01L29/94
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A MIS type field effect transistor including gate dielectrics having a rare-earth metal oxynitride layer with a high dielectric constant, which can maintain good interface characteristics, can be provided. A field effect transistor according to one aspect of this invention includes a gate dielectric having a substantially crystalline rare-earth metal oxynitride layer containing one or more metals selected from rare-earth metals, oxygen, and nitrogen. The rare-earth metal oxynitride layer contacts a predetermined region of a Si semiconductor substrate, and the nitrogen exists at the interface between the rare-earth metal oxynitride layer and the Si semiconductor substrate, and in the bulk of the rare-earth metal oxynitride. The transistor further includes a gate electrode formed on the gate dielectrics and source and drain regions, one being formed at one side of the gate electrode and the other being formed at the other side of the gate electrode in the Si semiconductor substrate.
摘要翻译：可以提供包括能够保持良好的界面特性的具有高介电常数的稀土金属氧氮化物层的栅极电介质的MIS型场效应晶体管。根据本发明的一个方面的场效应晶体管包括具有基本上结晶的稀土金属氧氮化物层的栅极电介质，所述稀土金属氧氮化物层含有选自稀土金属，氧和氮的一种或多种金属。稀土金属氮氧化物层与Si半导体衬底的预定区域接触，并且氮存在于稀土金属氧氮化物层和Si半导体衬底之间的界面处，并且在大部分稀土金属氧氮化物中。晶体管还包括形成在栅极电介质和源极和漏极区上的栅极，一个形成在栅电极的一侧，另一个形成在Si半导体衬底中的栅电极的另一侧。

4. 发明申请

US20050017304A1 Field effect transistor and method of manufacturing the same 失效
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US20050017304A1
公开(公告)日：2005-01-27
申请号：US10863226
申请日：2004-06-09
申请人： Daisuke Matsushita , Yukie Nishikawa , Hideki Satake , Noburu Fukushima
发明人： Daisuke Matsushita , Yukie Nishikawa , Hideki Satake , Noburu Fukushima
IPC分类号： H01L21/336 , H01L21/84 , H01L27/12 , H01L29/786 , H01L27/01
CPC分类号： H01L29/785 , H01L21/84 , H01L27/1203 , H01L29/66795 , H01L29/7842 , H01L29/78603 , H01L2924/0002 , H01L2924/00
摘要： There is provided a field effect transistor including: a first insulating film formed on a semiconductor substrate, and including at least a metal oxide having a crystallinity and different in a lattice distance of a crystal on an interface from the semiconductor substrate; a convex channel region formed above the first insulating film, and different in the lattice distance from the semiconductor substrate; a source region and a drain region formed above the first insulating film on side surfaces of the channel region, respectively; a second insulating film formed right above the channel region; a gate insulating film formed on a side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain regions are formed; and a gate electrode formed through the gate insulating film on at least the side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain region are formed.
摘要翻译：提供了一种场效应晶体管，包括：第一绝缘膜，形成在半导体衬底上，并且至少包括具有与半导体衬底的界面上的晶体的晶格距离不同的结晶度的金属氧化物; 形成在所述第一绝缘膜的上方的与所述半导体基板的晶格距离不同的凸状沟道区域; 源极区域和漏极区域，分别在沟道区域的侧表面上形成在第一绝缘膜的上方; 在通道区域正上方形成的第二绝缘膜; 形成在与形成有源极区域和漏极区域的沟道区域的侧面不同的沟道区域的侧面的栅极绝缘膜; 以及在与形成有源极区域和漏极区域的沟道区域的侧面不同的沟道区域的至少侧面上通过栅极绝缘膜形成的栅极电极。

5. 发明申请

US20060237837A1 Field effect transistor and method of manufacturing the same 有权
公开(公告)号：US20060237837A1
公开(公告)日：2006-10-26
申请号：US11472329
申请日：2006-06-22
申请人： Daisuke Matsushita , Yukie Nishikawa , Hideki Satake , Noburu Fukushima
发明人： Daisuke Matsushita , Yukie Nishikawa , Hideki Satake , Noburu Fukushima
IPC分类号： H01L23/14
CPC分类号： H01L29/785 , H01L21/84 , H01L27/1203 , H01L29/66795 , H01L29/7842 , H01L29/78603 , H01L2924/0002 , H01L2924/00
摘要： There is provided a field effect transistor including: a first insulating film formed on a semiconductor substrate, and including at least a metal oxide having a crystallinity and different in a lattice distance of a crystal on an interface from the semiconductor substrate; a convex channel region formed above the first insulating film, and different in the lattice distance from the semiconductor substrate; a source region and a drain region formed above the first insulating film on side surfaces of the channel region, respectively; a second insulating film formed right above the channel region; a gate insulating film formed on a side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain regions are formed; and a gate electrode formed through the gate insulating film on at least the side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain region are formed.

6. 发明授权

US07538013B2 Method of manufacturing a field effect transistor comprising an insulating film including metal oxide having crystallinity and different in a lattice distance from semiconductor substrate 有权
标题翻译：制造场效应晶体管的方法，该场效应晶体管包括具有结晶度并且与半导体衬底的晶格距离不同的金属氧化物的绝缘膜
公开(公告)号：US07538013B2
公开(公告)日：2009-05-26
申请号：US11472329
申请日：2006-06-22
申请人： Daisuke Matsushita , Yukie Nishikawa , Hideki Satake , Noburu Fukushima
发明人： Daisuke Matsushita , Yukie Nishikawa , Hideki Satake , Noburu Fukushima
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L29/785 , H01L21/84 , H01L27/1203 , H01L29/66795 , H01L29/7842 , H01L29/78603 , H01L2924/0002 , H01L2924/00
摘要： There is provided a field effect transistor including: a first insulating film formed on a semiconductor substrate, and including at least a metal oxide having a crystallinity and different in a lattice distance of a crystal on an interface from the semiconductor substrate; a channel region formed above the first insulating film, and different in the lattice distance from the semiconductor substrate; a source region and a drain region formed above the first insulating film on side surfaces of the channel region, respectively; a second insulating film formed right above the channel region; a gate insulating film formed on a side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain regions are formed; and a gate electrode formed through the gate insulating film on at least the side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain region are formed.
摘要翻译：提供了一种场效应晶体管，包括：第一绝缘膜，形成在半导体衬底上，并且至少包括具有与半导体衬底的界面上的晶体的晶格距离不同的结晶度的金属氧化物; 形成在第一绝缘膜上方的沟道区，与半导体衬底的晶格距离不同; 源极区域和漏极区域，分别在沟道区域的侧表面上形成在第一绝缘膜的上方; 在通道区域正上方形成的第二绝缘膜; 形成在与形成有源极区域和漏极区域的沟道区域的侧面不同的沟道区域的侧面的栅极绝缘膜; 以及在与形成有源极区域和漏极区域的沟道区域的侧面不同的沟道区域的至少侧面上通过栅极绝缘膜形成的栅极电极。

7. 发明授权

US07091561B2 Field effect transistor and method of manufacturing the same 失效
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US07091561B2
公开(公告)日：2006-08-15
申请号：US10863226
申请日：2004-06-09
申请人： Daisuke Matsushita , Yukie Nishikawa , Hideki Satake , Noburu Fukushima
发明人： Daisuke Matsushita , Yukie Nishikawa , Hideki Satake , Noburu Fukushima
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L29/785 , H01L21/84 , H01L27/1203 , H01L29/66795 , H01L29/7842 , H01L29/78603 , H01L2924/0002 , H01L2924/00
摘要： There is provided a field effect transistor including: a first insulating film formed on a semiconductor substrate, and including at least a metal oxide having a crystallinity and different in a lattice distance of a crystal on an interface from the semiconductor substrate; a convex channel region formed above the first insulating film, and different in the lattice distance from the semiconductor substrate; a source region and a drain region formed above the first insulating film on side surfaces of the channel region, respectively; a second insulating film formed right above the channel region; a gate insulating film formed on a side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain regions are formed; and a gate electrode formed through the gate insulating film on at least the side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain region are formed.
摘要翻译：提供了一种场效应晶体管，包括：第一绝缘膜，形成在半导体衬底上，并且至少包括具有与半导体衬底的界面上的晶体的晶格距离不同的结晶度的金属氧化物; 形成在所述第一绝缘膜的上方的与所述半导体基板的晶格距离不同的凸状沟道区域; 源极区域和漏极区域，分别在沟道区域的侧表面上形成在第一绝缘膜的上方; 在通道区域正上方形成的第二绝缘膜; 形成在与形成有源极区域和漏极区域的沟道区域的侧面不同的沟道区域的侧面的栅极绝缘膜; 以及在与形成有源极区域和漏极区域的沟道区域的侧面不同的沟道区域的至少侧面上通过栅极绝缘膜形成的栅极电极。

8. 发明申请

US20090014817A1 INSULATING FILM AND ELECTRONIC DEVICE 有权
标题翻译：绝缘膜和电子器件
公开(公告)号：US20090014817A1
公开(公告)日：2009-01-15
申请号：US12135919
申请日：2008-06-09
申请人： Tatsuo Shimizu , Hideki Satake
发明人： Tatsuo Shimizu , Hideki Satake
IPC分类号： H01L29/00
CPC分类号： H01L21/28185 , B82Y10/00 , H01L21/02148 , H01L21/02156 , H01L21/02175 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02192 , H01L21/02197 , H01L21/022 , H01L21/02244 , H01L21/02255 , H01L21/02271 , H01L21/02293 , H01L21/02337 , H01L21/28194 , H01L21/28291 , H01L21/3142 , H01L21/3147 , H01L21/3162 , H01L21/31641 , H01L21/31645 , H01L21/31691 , H01L28/56 , H01L29/122 , H01L29/152 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/78
摘要： An electronic device including a semiconductor layer having silicon as a major component; and a dielectric film epitaxially grown directly on a major surface of the semiconductor layer, wherein the dielectric film consists of a dielectric material having a Ruddlesden-Popper type structure, the Ruddlesden-Popper type structure is expressed by a chemical formula An+1BnO3n+1, the element A including at least one selected from a group consisting of Ba, Sr, Ca and Mg, a percentage of Mg content in the element A is not larger than 10%, and the element B includes at least one selected from a group consisting of Ti, Zr and Hf.
摘要翻译：一种电子器件，包括以硅为主要成分的半导体层; 以及直接在半导体层的主表面上外延生长的电介质膜，其中介电膜由具有Ruddlesden-Popper型结构的介电材料组成，Ruddlesden-Popper型结构由化学式An + 1BnO3n + 1表示包含选自Ba，Sr，Ca和Mg中的至少一种的元素A，元素A中的Mg含量的百分比不大于10％，并且元素B包括选自基团由Ti，Zr和Hf组成。

9. 发明申请

US20070218624A1 Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070218624A1
公开(公告)日：2007-09-20
申请号：US11724247
申请日：2007-03-15
申请人： Hideki Satake , Toshihide Nabatame
发明人： Hideki Satake , Toshihide Nabatame
IPC分类号： H01L21/8242
CPC分类号： H01L29/513 , H01L21/28097 , H01L29/4975 , H01L29/517 , H01L29/6659 , H01L29/7833
摘要： A method of manufacturing an MIS semiconductor device includes forming a high dielectric film as a gate insulator on a semiconductor substrate of a first conductivity type, heat-treating the semiconductor substrate in ambient with hydrogen and oxygen gases to form an interface layer between the semiconductor substrate and the high dielectric film, forming a conductive film on the high dielectric film after the interfacial layer is formed, processing the conductive film in a gate pattern to form a gate electrode, and doping the semiconductor substrate with impurities of a second conductivity type using the gate electrode as a mask to form source/drain regions.
摘要翻译：一种制造MIS半导体器件的方法包括在第一导电类型的半导体衬底上形成作为栅极绝缘体的高介电膜，用氢气和氧气在环境中对半导体衬底进行热处理，以在半导体衬底和高介电膜，在形成界面层之后在高电介质膜上形成导电膜，以栅极图案处理导电膜以形成栅电极，并使用第二导电类型的杂质掺杂半导体衬底栅极电极作为掩模形成源极/漏极区域。

10. 发明授权

US07208360B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07208360B2
公开(公告)日：2007-04-24
申请号：US11385932
申请日：2006-03-22
申请人： Hideki Satake
发明人： Hideki Satake
IPC分类号： H01L21/336
CPC分类号： H01L29/518 , H01L21/225 , H01L21/28176 , H01L21/28211
摘要： A semiconductor device is proposed which includes: a semiconductor substrate of a first conductivity type; a channel region formed at a surface of the semiconductor substrate; source and drain regions of a second conductivity type formed at both sides of the channel region in the semiconductor substrate; an insulating layer covering the channel region; and a gate electrode formed on the insulating layer, the insulating layer containing impurity atoms in such a manner that a concentration thereof is non-uniformly distributed along a surface parallel to the semiconductor substrate.
摘要翻译：提出了一种半导体器件，其包括：第一导电类型的半导体衬底; 形成在所述半导体衬底的表面的沟道区; 源极和漏极区，形成在半导体衬底中的沟道区的两侧; 覆盖沟道区域的绝缘层; 以及形成在所述绝缘层上的栅电极，所述绝缘层含有杂质原子，使得其浓度沿着与所述半导体衬底平行的表面不均匀分布。

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