会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明申请
    • MASK INSPECTION METHOD AND MASK INSPECTION APPARATUS
    • 屏蔽检查方法和面罩检查装置
    • US20120218543A1
    • 2012-08-30
    • US13403105
    • 2012-02-23
    • Takeshi YAMANETsuneo Terasawa
    • Takeshi YAMANETsuneo Terasawa
    • G01J3/00G01N21/00
    • G01N21/956G01N2021/8822G01N2021/95676
    • According to one embodiment, a method of detecting a defect of a semiconductor exposure mask includes acquiring a background intensity from a surface height distribution of the mask, acquiring a standard background intensity distribution from the background intensity, making light of an arbitrary wavelength incident on the mask, and acquiring an image at a position of interest of the mask, acquiring background intensity raw data, based on a signal intensity of the acquired image at the position of interest and a mean value of image intensity data in a peripheral area of the position of interest, finding a correction coefficient of the signal intensity, based on a ratio of the background intensity raw data to the standard background intensity distribution, correcting the signal intensity by multiplying the signal intensity.
    • 根据一个实施例,一种检测半导体曝光掩模的缺陷的方法包括从掩模的表面高度分布获取背景强度,从背景强度获取标准背景强度分布,使入射到 掩模,并且获取所述掩模的感兴趣位置处的图像,基于感兴趣位置处获取的图像的信号强度和所述位置的周边区域中的图像强度数据的平均值来获取背景强度原始数据 根据背景强度原始数据与标准背景强度分布的比率,求出信号强度的校正系数,通过乘以信号强度来校正信号强度。
    • 3. 发明申请
    • MASK DEFECT INSPECTION METHOD AND DEFECT INSPECTION APPARATUS
    • 掩蔽缺陷检查方法和缺陷检查装置
    • US20120063667A1
    • 2012-03-15
    • US13230030
    • 2011-09-12
    • Takeshi YAMANETsuneo Terasawa
    • Takeshi YAMANETsuneo Terasawa
    • G06K9/00
    • G01N21/956G01N2021/95676
    • According to one embodiment, in a method for inspecting a defect of an exposure mask, using an optical system which acquires a dark-field image, an arbitrary partial region where a uniform dark-field image is obtained on the mask is allocated at a defocus position to acquire an image. A detection threshold is decided using signal intensities of the acquired image and an area ratio between a desired inspection region and the partial region, so that a signal count indicating signal intensities greater than the detection threshold in the inspection region is less than a target false detection count. The mask is allocated in a just-in-focus position to acquire an image of the inspection region. A signal having a signal intensity of the acquired image, which indicates an intensity greater than the detection threshold, is determined as a defect.
    • 根据一个实施例,在用于检查曝光掩模的缺陷的方法中,使用获取暗视场图像的光学系统,在掩模上获得均匀的暗场图像的任意部分区域被分配在散焦 获取图像的位置。 使用所获取的图像的信号强度和期望检查区域和部分区域之间的面积比来确定检测阈值,使得指示在检查区域中大于检测阈值的信号强度的信号计数小于目标错误检测 计数。 掩模被分配在刚刚聚焦位置以获取检查区域的图像。 具有指示强度大于检测阈值的获取图像的信号强度的信号被确定为缺陷。