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1. 发明申请

US20120061747A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20120061747A1
公开(公告)日：2012-03-15
申请号：US13052917
申请日：2011-03-21
申请人： Takeshi UCHIHARA , Yusuke Kawaguchi , Keiko Kawamura , Hitoshi Shinohara , Yosefu Fujiki
发明人： Takeshi UCHIHARA , Yusuke Kawaguchi , Keiko Kawamura , Hitoshi Shinohara , Yosefu Fujiki
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L21/823487 , H01L27/088 , H01L29/0626 , H01L29/0696 , H01L29/0886 , H01L29/1095 , H01L29/4238 , H01L29/66734 , H01L29/7808
摘要： According to one embodiment, a semiconductor device includes a drift region of a first conductivity type, a base region of a second conductivity type, a source region of the first conductivity type, a gate electrode in a trench shape, a contact region of the second conductivity type, a drain electrode, and a source electrode. The drift region is selectively provided in a drain layer of the first conductivity type from a surface of the drain layer to an inside of the drain layer. The base region is selectively provided in the drift region from a surface of the drift region to an inside of the drift region. The source region is selectively provided in the base region from a surface of the base region to an inside of the base region. The gate electrode penetrates from a part of the source region through the base region adjacent to the part of the source region to reach a part of the drift region in a direction substantially parallel to a major surface of the drain layer. The contact region is selectively provided on the surface of the drift region. The contact region contains an impurity having a concentration higher than an impurity concentration of the base region. The drain electrode is connected to the drain layer. The source electrode is connected to the source region and the contact region. The contact region extends from a side of the drain layer toward the drift region and does not contact the drain layer.
摘要翻译：根据一个实施例，半导体器件包括第一导电类型的漂移区域，第二导电类型的基极区域，第一导电类型的源极区域，沟槽形状的栅电极，第二导电类型的接触区域导电类型，漏电极和源电极。漂移区选择性地设置在从漏层的表面到漏层的内部的第一导电类型的漏极层中。基极区域选择性地设置在漂移区域中，从漂移区域的表面到漂移区域的内部。源极区域从基极区域的表面到基极区域的内部选择性地设置在基极区域中。栅极电极从源极区域的一部分穿过与源极区域相邻的基极区域，以在与漏极层的主表面基本平行的方向上到达漂移区域的一部分。接触区选择性地设置在漂移区的表面上。接触区域含有浓度高于碱性区域的杂质浓度的杂质。漏电极连接到漏极层。源电极连接到源极区域和接触区域。接触区域从漏极层的侧面朝向漂移区域延伸，并且不接触漏极层。

2. 发明授权

US08482060B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US08482060B2
公开(公告)日：2013-07-09
申请号：US13052917
申请日：2011-03-21
申请人： Takeshi Uchihara , Yusuke Kawaguchi , Keiko Kawamura , Hitoshi Shinohara , Yosefu Fujiki
发明人： Takeshi Uchihara , Yusuke Kawaguchi , Keiko Kawamura , Hitoshi Shinohara , Yosefu Fujiki
IPC分类号： H01L29/772
CPC分类号： H01L29/7813 , H01L21/823487 , H01L27/088 , H01L29/0626 , H01L29/0696 , H01L29/0886 , H01L29/1095 , H01L29/4238 , H01L29/66734 , H01L29/7808
摘要： According to one embodiment, a semiconductor device includes a drift region of a first conductivity type, a base region of a second conductivity type, a source region of the first conductivity type, a gate electrode in a trench shape, a contact region of the second conductivity type, a drain electrode, and a source electrode. The drift region is selectively provided in a drain layer of the first conductivity type from a surface of the drain layer to an inside of the drain layer. The base region is selectively provided in the drift region from a surface of the drift region to an inside of the drift region. The source region is selectively provided in the base region from a surface of the base region to an inside of the base region. The gate electrode penetrates from a part of the source region through the base region adjacent to the part of the source region to reach a part of the drift region in a direction substantially parallel to a major surface of the drain layer. The contact region is selectively provided on the surface of the drift region. The contact region contains an impurity having a concentration higher than an impurity concentration of the base region. The drain electrode is connected to the drain layer. The source electrode is connected to the source region and the contact region. The contact region extends from a side of the drain layer toward the drift region and does not contact the drain layer.
摘要翻译：根据一个实施例，半导体器件包括第一导电类型的漂移区域，第二导电类型的基极区域，第一导电类型的源极区域，沟槽形状的栅电极，第二导电类型的接触区域导电类型，漏电极和源电极。漂移区选择性地设置在第一导电类型的漏极层中，从漏极层的表面到漏极层的内部。基极区域选择性地设置在漂移区域中，从漂移区域的表面到漂移区域的内部。源极区域从基极区域的表面到基极区域的内部选择性地设置在基极区域中。栅极电极从源极区域的一部分穿过与源极区域相邻的基极区域，以在与漏极层的主表面基本平行的方向上到达漂移区域的一部分。接触区选择性地设置在漂移区的表面上。接触区域含有浓度高于碱性区域的杂质浓度的杂质。漏电极连接到漏极层。源电极连接到源极区域和接触区域。接触区域从漏极层的侧面朝向漂移区域延伸，并且不接触漏极层。

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