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1. 发明申请

US20060263704A1 Semiconductor device manufacturing method and semiconductor manufacturing apparatus 失效
标题翻译：半导体装置的制造方法和半导体制造装置
公开(公告)号：US20060263704A1
公开(公告)日：2006-11-23
申请号：US11488849
申请日：2006-07-19
申请人： Takeshi Shibata , Hisanori Misawa , Kyoichi Suguro
发明人： Takeshi Shibata , Hisanori Misawa , Kyoichi Suguro
IPC分类号： G03F1/00 , H01L21/00 , H01L21/22
CPC分类号： H01L21/266
摘要： A method of manufacturing a semiconductor device is disclosed, which comprises setting a stencil mask above a substrate to be processed in confronting to the substrate, the stencil mask having an opening, and irradiating the substrate with charged particles through the opening of the stencil mask, while adjusting a potential difference between the stencil mask and the substrate depending on a value of a current flowing between the substrate and the stencil mask.
摘要翻译：公开了一种制造半导体器件的方法，其包括将待加工衬底上的模版掩模设置在与衬底相对的位置上，所述模板掩模具有开口，并且通过所述模板掩模的开口对所述衬底照射带电粒子，同时根据在基板和模板掩模之间流动的电流的值调节模板掩模和基板之间的电位差。

2. 发明授权

US07339247B2 Semiconductor device manufacturing method and semiconductor manufacturing apparatus 失效
标题翻译：半导体装置的制造方法和半导体制造装置
公开(公告)号：US07339247B2
公开(公告)日：2008-03-04
申请号：US11488849
申请日：2006-07-19
申请人： Takeshi Shibata , Hisanori Misawa , Kyoichi Suguro
发明人： Takeshi Shibata , Hisanori Misawa , Kyoichi Suguro
IPC分类号： H01L31/0232
CPC分类号： H01L21/266
摘要： A method of manufacturing a semiconductor device is disclosed, which comprises setting a stencil mask above a substrate to be processed in confronting to the substrate, the stencil mask having an opening, and irradiating the substrate with charged particles through the opening of the stencil mask, while adjusting a potential difference between the stencil mask and the substrate depending on a value of a current flowing between the substrate and the stencil mask.
摘要翻译：公开了一种制造半导体器件的方法，其包括将待加工衬底上的模版掩模设置在与衬底相对的位置上，所述模板掩模具有开口，并且通过所述模板掩模的开口对所述衬底照射带电粒子，同时根据在基板和模板掩模之间流动的电流的值调节模板掩模和基板之间的电位差。

3. 发明授权

US07094612B2 Method of controlling a potential difference between a stencil mask and a substrate of semiconductor device 失效
标题翻译：控制模板掩模和半导体器件的衬底之间的电位差的方法
公开(公告)号：US07094612B2
公开(公告)日：2006-08-22
申请号：US10743003
申请日：2003-12-23
申请人： Takeshi Shibata , Hisanori Misawa , Kyoichi Suguro
发明人： Takeshi Shibata , Hisanori Misawa , Kyoichi Suguro
IPC分类号： H01L21/00
CPC分类号： H01L21/266
摘要： A method of manufacturing a semiconductor device is disclosed, which comprises setting a stencil mask above a substrate to be processed in confronting to the substrate, the stencil mask having an opening, and irradiating the substrate with charged particles through the opening of the stencil mask, while adjusting a potential difference between the stencil mask and the substrate depending on a value of a current flowing between the substrate and the stencil mask.
摘要翻译：公开了一种制造半导体器件的方法，其包括将待加工衬底上的模版掩模设置在与衬底相对的位置上，所述模板掩模具有开口，并且通过所述模板掩模的开口对所述衬底照射带电粒子，同时根据在基板和模板掩模之间流动的电流的值调节模板掩模和基板之间的电位差。

4. 发明授权

US07327013B2 Stencil mask with charge-up prevention and method of manufacturing the same 失效
标题翻译：具有防止充电的模板面罩及其制造方法
公开(公告)号：US07327013B2
公开(公告)日：2008-02-05
申请号：US10743522
申请日：2003-12-23
申请人： Takeshi Shibata , Kyoichi Suguro
发明人： Takeshi Shibata , Kyoichi Suguro
IPC分类号： H01L29/06
CPC分类号： G03F1/20 , G03F1/40
摘要： A drive unit is described for switching circuit breakers on and off, in particular disconnecting switches and/or grounding switches of medium-voltage switchgear. The drive unit includes a reversible d.c. motor and a switching device containing two separately drivable and interlocked reversing switches, one assigned to each direction of rotation of the d.c. motor, their contacts performing the current reversal on the windings of the d.c. motor as required to reverse the direction of rotation. The drive unit further includes power contactors whose contacts have the required switching capacity for load switching. The all-or-nothing relays and safety switches are implemented by uniform low-power relays representing the direction of rotation, each having at least two electrically isolated relay contacts connected in parallel and also having an equalizing capacitor connected in parallel to each. Such drive units are used in connection with switchgear for power transmission and distribution.
摘要翻译：在模板掩模中，导电薄膜在其中具有第一开口。在除了第一开口之外的导电薄膜的区域中形成绝缘膜。在绝缘膜上形成导电支撑。第二个开口穿过导电支撑和绝缘膜并到达导电薄膜的表面。导电构件形成在第二开口中。导电构件电连接导电支撑件和导电薄膜。

5. 发明授权

US07745073B2 Method for manufacturing a semiconductor device, stencil mask and method for manufacturing a the same 失效
标题翻译：半导体器件的制造方法，模板掩模及其制造方法
公开(公告)号：US07745073B2
公开(公告)日：2010-06-29
申请号：US12289895
申请日：2008-11-06
申请人： Kyoichi Suguro , Takeshi Shibata , Kazuyoshi Sugihara , Kouji Matsuo
发明人： Kyoichi Suguro , Takeshi Shibata , Kazuyoshi Sugihara , Kouji Matsuo
IPC分类号： G03F9/00
CPC分类号： B82Y10/00 , C23C14/042 , C23C14/48 , G03F1/20 , H01J2237/0453 , H01J2237/31788 , H01L21/266 , Y10T428/24273
摘要： Preparing a stencil mask comprising a silicon thin film in which an opening for selectively irradiating charged particles to a semiconductor substrate is provided and whose irradiation surface on which the charged particles are irradiated is implanted with an impurity, and selectively irradiating charged particles to the semiconductor substrate using the stencil mask which is opposingly arranged on the semiconductor substrate.
摘要翻译：制备包括硅薄膜的模板掩模，其中用于选择性地将带电粒子照射到半导体基板的开口，并且其上照射有带电粒子的照射面被注入杂质，并且将带电粒子选择性地照射到半导体衬底使用相对设置在半导体衬底上的模板掩模。

6. 发明申请

US20070295918A1 Method for fabricating semiconductor device and equipment for fabricating the same 失效
公开(公告)号：US20070295918A1
公开(公告)日：2007-12-27
申请号：US11890485
申请日：2007-08-07
申请人： Takeshi Shibata , Kyoichi Suguro
发明人： Takeshi Shibata , Kyoichi Suguro
IPC分类号： G21K5/08
CPC分类号： G03F1/20 , G03F7/70066 , G03F7/70983 , H01J2237/31794 , Y10S430/143
摘要： A method for fabricating a semiconductor device and an equipment for fabricating the semiconductor device are described. According to the method and the equipment, a semiconductor substrate is irradiated with a particle beam through an opening formed in a thin film portion of a stencil mask having the thin film portion and a supporting portion supporting the thin film portion. The method and the equipment are controlled so that the supporting portion of the stencil mask can be irradiated with the fringe of the particle beam. As a result, the method and the equipment provide suppressing deterioration such as deformation or breakage of the stencil mask.

7. 发明申请

US20090139449A1 Method for manufacturing a semiconductor device, stencil mask and method for manufacturing a the same 失效
标题翻译：半导体器件的制造方法，模板掩模及其制造方法
公开(公告)号：US20090139449A1
公开(公告)日：2009-06-04
申请号：US12289895
申请日：2008-11-06
申请人： Kyoichi Suguro , Takeshi Shibata , Kazuyoshi Sugihara , Kouji Matsuo
发明人： Kyoichi Suguro , Takeshi Shibata , Kazuyoshi Sugihara , Kouji Matsuo
IPC分类号： B05C11/00
CPC分类号： B82Y10/00 , C23C14/042 , C23C14/48 , G03F1/20 , H01J2237/0453 , H01J2237/31788 , H01L21/266 , Y10T428/24273
摘要： Preparing a stencil mask comprising a silicon thin film in which an opening for selectively irradiating charged particles to a semiconductor substrate is provided and whose irradiation surface on which the charged particles are irradiated is implanted with an impurity, and selectively irradiating charged particles to the semiconductor substrate using the stencil mask which is opposingly arranged on the semiconductor substrate.
摘要翻译：制备包括硅薄膜的模板掩模，其中用于选择性地将带电粒子照射到半导体基板的开口，并且其上照射有带电粒子的照射面被注入杂质，并且将带电粒子选择性地照射到半导体衬底使用相对设置在半导体衬底上的模板掩模。

8. 发明授权

US07267927B2 Method for fabricating semiconductor device and equipment for fabricating the same 失效
标题翻译：制造半导体器件的方法及其制造方法
公开(公告)号：US07267927B2
公开(公告)日：2007-09-11
申请号：US10743290
申请日：2003-12-23
申请人： Takeshi Shibata , Kyoichi Suguro
发明人： Takeshi Shibata , Kyoichi Suguro
IPC分类号： G03C5/00
CPC分类号： G03F1/20 , G03F7/70066 , G03F7/70983 , H01J2237/31794 , Y10S430/143
摘要： A method for fabricating a semiconductor device and an equipment for fabricating the semiconductor device are described.According to the method and the equipment, a semiconductor substrate is irradiated with a particle beam through an opening formed in a thin film portion of a stencil mask having the thin film portion and a supporting portion supporting the thin film portion. The method and the equipment are controlled so that the supporting portion of the stencil mask can be irradiated with the fringe of the particle beam. As a result, the method and the equipment provide suppressing deterioration such as deformation or breakage of the stencil mask.
摘要翻译：对半导体装置的制造方法及半导体装置的制造装置进行说明。根据该方法和设备，通过形成在具有薄膜部分的模板掩模的薄膜部分中的开口和支撑薄膜部分的支撑部分，通过粒子束照射半导体衬底。控制该方法和设备，使得模板掩模的支撑部分可以用粒子束的边缘照射。结果，该方法和设备抑制了模板掩模的变形或断裂等劣化。

9. 发明申请

US20070111114A1 Method for manufacturing a semiconductor device, stencil mask and method for manufacturing a the same 失效
标题翻译：半导体装置的制造方法，模板掩模及其制造方法
公开(公告)号：US20070111114A1
公开(公告)日：2007-05-17
申请号：US11648564
申请日：2007-01-03
申请人： Kyoichi Suguro , Takeshi Shibata , Kazuyoshi Sugihara , Kouji Matsuo
发明人： Kyoichi Suguro , Takeshi Shibata , Kazuyoshi Sugihara , Kouji Matsuo
IPC分类号： G03F1/00 , G03C5/00
CPC分类号： B82Y10/00 , C23C14/042 , C23C14/48 , G03F1/20 , H01J2237/0453 , H01J2237/31788 , H01L21/266 , Y10T428/24273
摘要： Preparing a stencil mask comprising a silicon thin film in which an opening for selectively irradiating charged particles to a semiconductor substrate is provided and whose irradiation surface on which the charged particles are irradiated is implanted with an impurity, and selectively irradiating charged particles to the semiconductor substrate using the stencil mask which is opposingly arranged on the semiconductor substrate.
摘要翻译：制备包括硅薄膜的模板掩模，其中用于选择性地将带电粒子照射到半导体基板的开口，并且其上照射有带电粒子的照射面被注入杂质，并且将带电粒子选择性地照射到半导体衬底使用相对设置在半导体衬底上的模板掩模。

10. 发明授权

US07521697B2 Method for fabricating semiconductor device and equipment for fabricating the same 失效
标题翻译：制造半导体器件的方法及其制造方法
公开(公告)号：US07521697B2
公开(公告)日：2009-04-21
申请号：US11890485
申请日：2007-08-07
申请人： Takeshi Shibata , Kyoichi Suguro
发明人： Takeshi Shibata , Kyoichi Suguro
IPC分类号： A61N5/00 , G21G5/00
CPC分类号： G03F1/20 , G03F7/70066 , G03F7/70983 , H01J2237/31794 , Y10S430/143
摘要： A method for fabricating a semiconductor device and an equipment for fabricating the semiconductor device are described.According to the method and the equipment, a semiconductor substrate is irradiated with a particle beam through an opening formed in a thin film portion of a stencil mask having the thin film portion and a supporting portion supporting the thin film portion. The method and the equipment are controlled so that the supporting portion of the stencil mask can be irradiated with the fringe of the particle beam. As a result, the method and the equipment provide suppressing deterioration such as deformation or breakage of the stencil mask.
摘要翻译：对半导体装置的制造方法及半导体装置的制造装置进行说明。根据该方法和设备，通过形成在具有薄膜部分的模板掩模的薄膜部分中的开口和支撑薄膜部分的支撑部分，通过粒子束照射半导体衬底。控制该方法和设备，使得模板掩模的支撑部分可以用粒子束的边缘照射。结果，该方法和设备抑制了模板掩模的变形或断裂等劣化。

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