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1. 发明申请

US20060263704A1 Semiconductor device manufacturing method and semiconductor manufacturing apparatus 失效
标题翻译：半导体装置的制造方法和半导体制造装置
公开(公告)号：US20060263704A1
公开(公告)日：2006-11-23
申请号：US11488849
申请日：2006-07-19
申请人： Takeshi Shibata , Hisanori Misawa , Kyoichi Suguro
发明人： Takeshi Shibata , Hisanori Misawa , Kyoichi Suguro
IPC分类号： G03F1/00 , H01L21/00 , H01L21/22
CPC分类号： H01L21/266
摘要： A method of manufacturing a semiconductor device is disclosed, which comprises setting a stencil mask above a substrate to be processed in confronting to the substrate, the stencil mask having an opening, and irradiating the substrate with charged particles through the opening of the stencil mask, while adjusting a potential difference between the stencil mask and the substrate depending on a value of a current flowing between the substrate and the stencil mask.
摘要翻译：公开了一种制造半导体器件的方法，其包括将待加工衬底上的模版掩模设置在与衬底相对的位置上，所述模板掩模具有开口，并且通过所述模板掩模的开口对所述衬底照射带电粒子，同时根据在基板和模板掩模之间流动的电流的值调节模板掩模和基板之间的电位差。

2. 发明授权

US07339247B2 Semiconductor device manufacturing method and semiconductor manufacturing apparatus 失效
标题翻译：半导体装置的制造方法和半导体制造装置
公开(公告)号：US07339247B2
公开(公告)日：2008-03-04
申请号：US11488849
申请日：2006-07-19
申请人： Takeshi Shibata , Hisanori Misawa , Kyoichi Suguro
发明人： Takeshi Shibata , Hisanori Misawa , Kyoichi Suguro
IPC分类号： H01L31/0232
CPC分类号： H01L21/266
摘要： A method of manufacturing a semiconductor device is disclosed, which comprises setting a stencil mask above a substrate to be processed in confronting to the substrate, the stencil mask having an opening, and irradiating the substrate with charged particles through the opening of the stencil mask, while adjusting a potential difference between the stencil mask and the substrate depending on a value of a current flowing between the substrate and the stencil mask.
摘要翻译：公开了一种制造半导体器件的方法，其包括将待加工衬底上的模版掩模设置在与衬底相对的位置上，所述模板掩模具有开口，并且通过所述模板掩模的开口对所述衬底照射带电粒子，同时根据在基板和模板掩模之间流动的电流的值调节模板掩模和基板之间的电位差。

3. 发明授权

US07094612B2 Method of controlling a potential difference between a stencil mask and a substrate of semiconductor device 失效
标题翻译：控制模板掩模和半导体器件的衬底之间的电位差的方法
公开(公告)号：US07094612B2
公开(公告)日：2006-08-22
申请号：US10743003
申请日：2003-12-23
申请人： Takeshi Shibata , Hisanori Misawa , Kyoichi Suguro
发明人： Takeshi Shibata , Hisanori Misawa , Kyoichi Suguro
IPC分类号： H01L21/00
CPC分类号： H01L21/266
摘要： A method of manufacturing a semiconductor device is disclosed, which comprises setting a stencil mask above a substrate to be processed in confronting to the substrate, the stencil mask having an opening, and irradiating the substrate with charged particles through the opening of the stencil mask, while adjusting a potential difference between the stencil mask and the substrate depending on a value of a current flowing between the substrate and the stencil mask.
摘要翻译：公开了一种制造半导体器件的方法，其包括将待加工衬底上的模版掩模设置在与衬底相对的位置上，所述模板掩模具有开口，并且通过所述模板掩模的开口对所述衬底照射带电粒子，同时根据在基板和模板掩模之间流动的电流的值调节模板掩模和基板之间的电位差。

4. 发明授权

US07282725B2 Method of manufacturing semiconductor device, semiconductor manufacturing apparatus, and stencil mask 失效
标题翻译：制造半导体器件，半导体制造装置和模板掩模的方法
公开(公告)号：US07282725B2
公开(公告)日：2007-10-16
申请号：US11284035
申请日：2005-11-22
申请人： Takeshi Shibata , Hisanori Misawa
发明人： Takeshi Shibata , Hisanori Misawa
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J2237/31711
摘要： A manufacturing apparatus of a semiconductor device is disclosed, which comprises an implantation source which applies particles or an electromagnetic wave into an implantation region of a semiconductor substrate in a θ direction shifted by an angle θ from a vertical direction of the semiconductor substrate, a first stencil mask disposed between the semiconductor substrate and the implantation source, the first stencil mask having a first opening corresponding in the θ direction to the implantation region, and a second stencil mask disposed between the first stencil mask and the implantation source, the second stencil mask having a second opening corresponding in the θ direction to the implantation region.
摘要翻译：公开了一种半导体器件的制造装置，其包括：注入源，其以从半导体衬底的垂直方向偏移角度θ的θ方向将粒子或电磁波施加到半导体衬底的注入区域;第一设置在半导体衬底和注入源之间的模板掩模，第一模版掩模具有在θ方向上与注入区对应的第一开口，以及设置在第一模板掩模和注入源之间的第二模板掩模，第二模板掩模具有在θ方向上对应于植入区域的第二开口。

5. 发明授权

US07034318B2 Method of manufacturing semiconductor device, semiconductor manufacturing apparatus, and stencil mask 失效
公开(公告)号：US07034318B2
公开(公告)日：2006-04-25
申请号：US10738038
申请日：2003-12-18
申请人： Takeshi Shibata , Hisanori Misawa
发明人： Takeshi Shibata , Hisanori Misawa
IPC分类号： G01K1/08
CPC分类号： H01J37/3171 , H01J2237/31711
摘要： A manufacturing apparatus of a semiconductor device is disclosed, which comprises an implantation source which applies particles or an electromagnetic wave into an implantation region of a semiconductor substrate in a θ direction shifted by an angle θ from a vertical direction of the semiconductor substrate, a first stencil mask disposed between the semiconductor substrate and the implantation source, the first stencil mask having a first opening corresponding in the θ direction to the implantation region, and a second stencil mask disposed between the first stencil mask and the implantation source, the second stencil mask having a second opening corresponding in the θ direction to the implantation region.

6. 发明申请

US20060071183A1 Method of manufacturing semiconductor device, semiconductor manufacturing apparatus, and stencil mask 失效
标题翻译：制造半导体器件，半导体制造装置和模板掩模的方法
公开(公告)号：US20060071183A1
公开(公告)日：2006-04-06
申请号：US11284035
申请日：2005-11-22
申请人： Takeshi Shibata , Hisanori Misawa
发明人： Takeshi Shibata , Hisanori Misawa
IPC分类号： G21K5/10
CPC分类号： H01J37/3171 , H01J2237/31711
摘要： A manufacturing apparatus of a semiconductor device is disclosed, which comprises an implantation source which applies particles or an electromagnetic wave into an implantation region of a semiconductor substrate in a θ direction shifted by an angle θ from a vertical direction of the semiconductor substrate, a first stencil mask disposed between the semiconductor substrate and the implantation source, the first stencil mask having a first opening corresponding in the θ direction to the implantation region, and a second stencil mask disposed between the first stencil mask and the implantation source, the second stencil mask having a second opening corresponding in the θ direction to the implantation region.
摘要翻译：公开了一种半导体器件的制造装置，其包括：注入源，其以从半导体衬底的垂直方向偏移角度θ的θ方向将粒子或电磁波施加到半导体衬底的注入区域;第一设置在半导体衬底和注入源之间的模板掩模，第一模版掩模具有在θ方向上与注入区对应的第一开口，以及设置在第一模板掩模和注入源之间的第二模板掩模，第二模板掩模具有在θ方向上对应于植入区域的第二开口。

7. 发明授权

US5179433A Breakdown evaluating test element 失效
标题翻译：故障评估测试元件
公开(公告)号：US5179433A
公开(公告)日：1993-01-12
申请号：US713981
申请日：1991-06-12
申请人： Hisanori Misawa , Masakazu Shiozaki
发明人： Hisanori Misawa , Masakazu Shiozaki
IPC分类号： G01R31/26 , H01L21/66
CPC分类号： G01R31/261
摘要： A breakdown evaluating test element insert an oxide film having thin thick portion and formed on a silicon wafer and a polysilicon film formed on the oxide film, in such a way that a capacitor is formed between the silicon wafer and the polysilicon film with the oxide film as dielectric. The area of the polysilicon film is made larger than that of the thin portion of the oxide film so that only the thin portion thereof is brought into breakdown at a predetermined probability by an electric field strength generated at the thin portion when an electric field is applied to the wafer and when no electron shower is used (no breakdown prevention countermeasure is taken) during ion implantation, for instance. Therefore, the effect of the electron shower can be confirmed by checking the resistivity of the thin oxide film portion after the wafer has been ion-implanted by using an electron shower.
摘要翻译：击穿评估测试元件插入形成在硅晶片上的薄厚氧化膜和形成在氧化膜上的多晶硅膜，使得在硅晶片和多晶硅膜之间形成电容器，氧化膜作为电介质。使多晶硅膜的面积比氧化膜的薄部的面积大，使得当施加电场时，在薄部分产生的电场强度只有其薄的部分以预定的概率被击穿例如在离子注入期间，不使用电子淋浴（没有防止击穿的对策）。因此，可以通过使用电子淋浴器在离子注入晶片之后检查薄氧化膜部分的电阻率来确认电子淋浴的效果。

8. 发明授权

US4783597A Ion implant apparatus 失效
标题翻译：离子注入装置
公开(公告)号：US4783597A
公开(公告)日：1988-11-08
申请号：US924370
申请日：1986-10-29
申请人： Hisanori Misawa , Hidetaro Nishimura , Takaya Tsujimaru , Shuji Kikuchi , Nobuyuki Abe , Kouichi Mori
发明人： Hisanori Misawa , Hidetaro Nishimura , Takaya Tsujimaru , Shuji Kikuchi , Nobuyuki Abe , Kouichi Mori
IPC分类号： H01L21/265 , H01J37/02 , H01J37/317
CPC分类号： H01J37/026 , H01J37/3171
摘要： An ion implant apparatus which forms ions from an ion source into an ion beam to implant the ions into a target to be ion-implanted through an ion beam introduction tube. The ion implant apparatus comprises: radiation means for radiating an electron beam, the radiating means fixed on the ion beam introduction tube; and a target for being radiated by an electron beam, said target reflecting the electron beam to generate a reflectance beam, the electron beam causing a secondary electron beam to be emitted from the electron beam target, the electron beam target being formed so as to prevent the reflectance beam and the secondary electron beam from being directly radiated on the target to be ion-implanted. The apparatus can keep high energy electrons from the surface of a wafer thereby to prevent the wafer from being charged negatively, and can trap the high energy electrons in the measuring system thereby to decrease errors in measuring a number of dopant atoms.
摘要翻译：一种离子注入装置，其从离子源形成离子到离子束中，以将离子注入到通过离子束引入管离子注入的靶中。离子注入装置包括：用于辐射电子束的辐射装置，固定在离子束引入管上的辐射装置; 以及通过电子束照射的目标，所述目标反射电子束以产生反射光束，使得从电子束靶发射二次电子束的电子束，形成电子束靶，以防止反射光束和二次电子束直接照射在待离子注入的靶上。该装置可以保持来自晶片表面的高能电子，从而防止晶片被负电荷捕获，并且可以捕获测量系统中的高能电子，从而减少测量多个掺杂原子的误差。

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