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    • 4. 发明授权
    • Gate array
    • 门阵列
    • US4692783A
    • 1987-09-08
    • US922787
    • 1986-10-23
    • Hideo MonmaMasato IshiguroTetsuo Kawano
    • Hideo MonmaMasato IshiguroTetsuo Kawano
    • H01L21/822H01L21/82H01L21/8238H01L27/04H01L27/092H01L27/118H01L29/78
    • H01L27/11807H01L21/82
    • A gate array is disclosed having a plurality of basic cells each comprising a transistor whose gm is as low as one fifth to one twentieth that of the transistors in a conventional gate array. The low gm is provided by reducing the W/L ratio of the gate region of the transistor. The basic cell having the transistor of the low gm is formed to replace the conventional basic cell at a specified position in a specified basic cell array. The transistor of low gm reduces the number of basic cells necessary for forming a delay circuit, and elminates the need for an external resistance component which was formerly required when a pull-up or pull-down circuit or a monostable multivibrator was formed in the gate array.
    • 公开了具有多个基本单元的门阵列,每个基本单元包括其常规门阵列中的晶体管的gm低至五分之一至二十分之一的晶体管。 通过降低晶体管的栅极区域的W / L比来提供低gm。 具有低gm的晶体管的基本单元被形成为在指定的基本单元阵列中的指定位置处替换传统的基本单元。 低gm的晶体管减少形成延迟电路所需的基本电池数量,并且最终需要一种外部电阻元件,这在先前在栅极中形成上拉或下拉电路或单稳态多谐振荡器时是需要的 数组。