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    • 10. 发明授权
    • Semiconductor device
    • 半导体器件
    • US06507529B2
    • 2003-01-14
    • US10003430
    • 2001-12-06
    • Tomonori FujimotoKiyoto OhtaYuji Yamasaki
    • Tomonori FujimotoKiyoto OhtaYuji Yamasaki
    • G11C700
    • G11C11/406
    • A semiconductor device capable of refreshing a plurality of memory cells. In operation, when requesting a data read operation a /row selection control signal is input to a set/reset circuit of a row selection control circuit, whereby an H-level hidden refresh control signal is output and an internal row selection control signal transitions to the H level. As a result, an intended word line is selected, and a refresh operation is initiated. Then, a sense amplifier activation completion signal SEND is input via a delay circuit to the set/reset circuit after completion of a sense operation, and the internal row selection control signal transitions to the L level. The sense amplifier activation completion signal SEND is input to another set/reset circuit after passing through three delay circuits, and an RW row selection control signal transitions to the H level, thereby performing a data read operation.
    • 一种能够刷新多个存储单元的半导体器件。 在操作中,当请求数据读取操作时,a /行选择控制信号被输入到行选择控制电路的设置/复位电路,由此输出H电平隐藏刷新控制信号,并且内部行选择控制信号转换到 H级。 结果,选择预期的字线,并且启动刷新操作。 然后,在感测操作完成之后,通过延迟电路将感测放大器激活完成信号SEND输入到设置/复位电路,并且内部行选择控制信号转换到L电平。 在通过三个延迟电路之后,读出放大器激活完成信号SEND被输入到另一个设置/复位电路,并且RW行选择控制信号转换到H电平,从而进行数据读取操作。