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1. 发明授权

US08670082B2 Thin film transistor, display device and liquid crystal display device 有权
标题翻译：薄膜晶体管，显示装置和液晶显示装置
公开(公告)号：US08670082B2
公开(公告)日：2014-03-11
申请号：US13242283
申请日：2011-09-23
申请人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai
发明人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai
IPC分类号： G02F1/136 , H01L29/04
CPC分类号： H01L29/66765 , G02F1/136209 , H01L29/78633
摘要： A thin film transistor, a display device and a liquid crystal display device are provided. The thin film transistor includes a gate electrode film onto which light from a light source is irradiated, a semiconductor film formed on the gate electrode film and on an opposite side to the light source side through an insulating film, first and second electrode films formed to be in electrical contact with the semiconductor film, and a first shielding film formed in a same layer as the gate electrode film and electrically isolated from the gate electrode film, wherein the first shielding film overlaps a part of the semiconductor film as seen from the light irradiation direction and also overlaps at least a part of the first electrode film as seen from the light irradiation direction.
摘要翻译：提供薄膜晶体管，显示装置和液晶显示装置。薄膜晶体管包括：栅极电极膜，其上照射有来自光源的光，通过绝缘膜形成在栅极电极膜上并且在与光源侧相反的一侧的半导体膜，第一和第二电极膜形成为与半导体膜电接触;以及第一屏蔽膜，其形成在与栅极电极膜相同的层中并与栅极电极膜电隔离，其中第一屏蔽膜与从该光看到的半导体膜的一部分重叠照射方向，并且从光照射方向观察，还与第一电极膜的至少一部分重叠。

2. 发明申请

US20120080683A1 THIN FILM TRANSITOR, DISPLAY DEVICE, AND LIQUID CRYSTAL DISPLAY DEVICE 有权
标题翻译：薄膜传输器，显示器件和液晶显示器件
公开(公告)号：US20120080683A1
公开(公告)日：2012-04-05
申请号：US13242283
申请日：2011-09-23
申请人： Takeshi NODA , Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai
发明人： Takeshi NODA , Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai
IPC分类号： H01L27/15 , H01L29/786
CPC分类号： H01L29/66765 , G02F1/136209 , H01L29/78633
摘要： A thin film transistor, a display device and a liquid crystal display device are provided. The thin film transistor includes a gate electrode film onto which light from a light source is irradiated, a semiconductor film formed on the gate electrode film and on an opposite side to the light source side through an insulating film, first and second electrode films formed to be in electrical contact with the semiconductor film, and a first shielding film formed in a same layer as the gate electrode film and electrically isolated from the gate electrode film, wherein the first shielding film overlaps a part of the semiconductor film as seen from the light irradiation direction and also overlaps at least a part of the first electrode film as seen from the light irradiation direction.
摘要翻译：提供薄膜晶体管，显示装置和液晶显示装置。薄膜晶体管包括：栅极电极膜，其上照射有来自光源的光，通过绝缘膜形成在栅极电极膜上并且在与光源侧相反的一侧的半导体膜，第一和第二电极膜形成为与半导体膜电接触;以及第一屏蔽膜，其形成在与栅极电极膜相同的层中并与栅极电极膜电隔离，其中第一屏蔽膜与从该光看到的半导体膜的一部分重叠照射方向，并且从光照射方向观察，还与第一电极膜的至少一部分重叠。

3. 发明授权

US08421940B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08421940B2
公开(公告)日：2013-04-16
申请号：US12405396
申请日：2009-03-17
申请人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takahiro Kamo
发明人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takahiro Kamo
IPC分类号： G02F1/136
CPC分类号： H01L27/1251 , H01L27/1229 , H01L27/1285
摘要： A display device includes a TFT substrate in which a plurality of first TFT elements each having an active layer of an amorphous semiconductor and a plurality of second TFT elements each having an active layer of a polycrystalline semiconductor are disposed on a surface of an insulating substrate, wherein the first TFT element and the second TFT element each have a structure with a gate electrode, a gate insulating film, and the active layer stacked in this order on the surface of the insulating substrate and a source electrode and a drain electrode both connected to the active layer via a contact layer above the active layer, and the active layer of the second TFT element has a thickness of more than 60 nm in a position where the contact layer is stacked.
摘要翻译：显示装置包括TFT基板，其中在绝缘基板的表面上设置有多个具有非晶半导体的有源层的第一TFT元件和多个具有多晶半导体的有源层的第二TFT元件，其中所述第一TFT元件和所述第二TFT元件各自具有在所述绝缘基板的表面上依次堆叠的栅电极，栅极绝缘膜和所述有源层的结构，以及源电极和漏电极都连接到通过有源层上方的接触层的有源层和第二TFT元件的有源层在接触层堆叠的位置具有大于60nm的厚度。

4. 发明授权

US07777230B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US07777230B2
公开(公告)日：2010-08-17
申请号：US12155788
申请日：2008-06-10
申请人： Hidekazu Miyake , Takuo Kaitoh , Takeshi Noda , Toshio Miyazawa
发明人： Hidekazu Miyake , Takuo Kaitoh , Takeshi Noda , Toshio Miyazawa
IPC分类号： H01L27/14
CPC分类号： H01L27/124 , G02F1/1368
摘要： The present invention provides a display device having thin film transistors which can reduce an OFF current in spite of the extremely simple constitution. In the display device having thin film transistors on a substrate, each thin film transistor includes a gate electrode which is connected with a gate signal line, a semiconductor layer which is formed astride the gate electrode by way of an insulation film, a drain electrode which is connected with a drain signal line and is formed on the semiconductor layer, and a source electrode which is formed on the semiconductor layer in a state that the source electrode faces the drain electrode in an opposed manner, and a side of the drain electrode which faces the source electrode does not overlap the gate electrode as viewed in a plan view, and a side of the source electrode which faces the drain electrode does not overlap the gate electrode as viewed in a plan view.
摘要翻译：本发明提供了一种具有薄膜晶体管的显示装置，尽管结构非常简单，但可以减小关断电流。在基板上具有薄膜晶体管的显示装置中，每个薄膜晶体管包括与栅极信号线连接的栅电极，通过绝缘膜跨越栅电极的半导体层，漏电极与漏极信号线连接并形成在半导体层上，并且以与源电极相对的方式形成在漏电极的状态的半导体层上形成的源电极和漏电极的一侧如平面图所示，面源极电极不与栅电极重叠，源极电极的面对漏电极的一侧与平面图中的栅电极不重叠。

5. 发明申请

US20090230397A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20090230397A1
公开(公告)日：2009-09-17
申请号：US12405396
申请日：2009-03-17
申请人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takahiro Kamo
发明人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takahiro Kamo
IPC分类号： H01L27/12 , H01L21/77
CPC分类号： H01L27/1251 , H01L27/1229 , H01L27/1285
摘要： A display device includes a TFT substrate in which a plurality of first TFT elements each having an active layer of an amorphous semiconductor and a plurality of second TFT elements each having an active layer of a polycrystalline semiconductor are disposed on a surface of an insulating substrate, wherein the first TFT element and the second TFT element each have a structure with a gate electrode, a gate insulating film, and the active layer stacked in this order on the surface of the insulating substrate and a source electrode and a drain electrode both connected to the active layer via a contact layer above the active layer, and the active layer of the second TFT element has a thickness of more than 60 nm in a position where the contact layer is stacked.
摘要翻译：显示装置包括TFT基板，其中在绝缘基板的表面上设置有多个具有非晶半导体的有源层的第一TFT元件和多个具有多晶半导体的有源层的第二TFT元件，其中所述第一TFT元件和所述第二TFT元件各自具有在所述绝缘基板的表面上依次堆叠的栅电极，栅极绝缘膜和所述有源层的结构，以及源电极和漏电极都连接到通过有源层上方的接触层的有源层和第二TFT元件的有源层在接触层堆叠的位置具有大于60nm的厚度。

6. 发明申请

US20080308811A1 Display device 有权
标题翻译：显示设备
公开(公告)号：US20080308811A1
公开(公告)日：2008-12-18
申请号：US12155788
申请日：2008-06-10
申请人： Hidekazu Miyake , Takuo Kaitoh , Takeshi Noda , Toshio Miyazawa
发明人： Hidekazu Miyake , Takuo Kaitoh , Takeshi Noda , Toshio Miyazawa
IPC分类号： H01L33/00
CPC分类号： H01L27/124 , G02F1/1368
摘要： The present invention provides a display device having thin film transistors which can reduce an OFF current in spite of the extremely simple constitution. In the display device having thin film transistors on a substrate, each thin film transistor includes a gate electrode which is connected with a gate signal line, a semiconductor layer which is formed astride the gate electrode by way of an insulation film, a drain electrode which is connected with a drain signal line and is formed on the semiconductor layer, and a source electrode which is formed on the semiconductor layer in a state that the source electrode faces the drain electrode in an opposed manner, and a side of the drain electrode which faces the source electrode does not overlap the gate electrode as viewed in a plan view, and a side of the source electrode which faces the drain electrode does not overlap the gate electrode as viewed in a plan view.
摘要翻译：本发明提供了一种具有薄膜晶体管的显示装置，尽管结构非常简单，但可以减小关断电流。在基板上具有薄膜晶体管的显示装置中，每个薄膜晶体管包括与栅极信号线连接的栅电极，通过绝缘膜跨越栅电极的半导体层，漏电极与漏极信号线连接并形成在半导体层上，并且以与源电极相对的方式形成在漏电极的状态的半导体层上形成的源电极和漏电极的一侧如平面图所示，面源极电极不与栅电极重叠，源极电极的面对漏电极的一侧与平面图中的栅电极不重叠。

7. 发明授权

US08049255B2 Display device and method of manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08049255B2
公开(公告)日：2011-11-01
申请号：US12155504
申请日：2008-06-05
申请人： Takeshi Sakai , Toshio Miyazawa , Takuo Kaitoh , Hidekazu Miyake
发明人： Takeshi Sakai , Toshio Miyazawa , Takuo Kaitoh , Hidekazu Miyake
IPC分类号： H01L31/062
CPC分类号： H01L27/1214 , H01L29/41733 , H01L29/458 , H01L29/66765 , H01L29/78618 , H01L29/78678
摘要： A semiconductor device includes an insulating substrate and a TFT element disposed on the substrate. The TFT element includes a gate electrode, a gate insulating film, a semiconductor layer, and a source electrode and a drain electrode arranged in that order on the insulating substrate. The semiconductor layer includes an active layer composed of polycrystalline semiconductor and a contact layer segment interposed between the active layer and the source electrode and another contact layer segment interposed between the active layer and the drain electrode. The source and drain electrodes each have a first face facing the opposite face of the active layer from the interface with the gate insulating layer and a second face facing an etched side face of the active layer. Each contact layer segment is disposed between the active layer and each of the first and second faces of the source or drain electrode.
摘要翻译：半导体器件包括绝缘基板和设置在基板上的TFT元件。 TFT元件包括在绝缘基板上依次排列的栅电极，栅极绝缘膜，半导体层以及源电极和漏电极。半导体层包括由多晶半导体构成的有源层和介于有源层与源电极之间的接触层段，以及介于有源层和漏电极之间的另一接触层段。源极和漏极各自具有面对与有源层的界面相对的有源层的相对面的第一面和与有源层的蚀刻侧面对置的第二面。每个接触层段设置在源极或漏极之间的有源层和第一和第二表面中的每一个之间。

8. 发明授权

US08247817B2 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US08247817B2
公开(公告)日：2012-08-21
申请号：US12379874
申请日：2009-03-03
申请人： Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai , Terunori Saitou
发明人： Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai , Terunori Saitou
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00
CPC分类号： H01L29/78696 , H01L27/1229 , H01L27/1251
摘要： In a bottom-gate-type thin film transistor used in a liquid crystal display device in which a poly-Si layer and an a-Si layer are stacked, a quantity of an ON current which flows in the thin film transistor can be increased. A poly-Si layer and an a-Si layer are stacked on a gate electrode as an active layer by way of a gate insulation film therebetween in order of the poly-Si layer and the a-Si layer. An n+Si layer and a source/drain layer are formed on the a-Si layer thus forming a thin film transistor. A forward current which flows in the thin film transistor mainly flows in the poly-Si layer. To decrease contact resistance against the forward current between the poly-Si layer and the n+Si layer, an edge portion of the a-Si layer and an edge portion of the poly-Si layer assume a concavo-convex shape thus particularly increasing a contact area between the poly-Si layer and the n+Si layer whereby the contact resistance against the forward current can be decreased leading to the increase of a quantity of an ON current.
摘要翻译：在层叠多晶硅层和a-Si层的液晶显示装置中使用的底栅型薄膜晶体管中，可以增加流入薄膜晶体管的导通电流量。按照多晶硅层和a-Si层的顺序，通过栅绝缘膜将多晶Si层和a-Si层层叠在作为有源层的栅电极上。在a-Si层上形成n + Si层和源/漏层，从而形成薄膜晶体管。在薄膜晶体管中流动的正向电流主要在多晶硅层中流动。为了降低与多晶硅层和n + Si层之间的正向电流的接触电阻，a-Si层的边缘部分和多晶硅层的边缘部分呈现凹凸形状，因此特别增加了多晶硅层和n + Si层之间的接触面积，由此可以减小与正向电流的接触电阻，导致导通电流的增加。

9. 发明申请

US20090050896A1 Display device 有权
标题翻译：显示设备
公开(公告)号：US20090050896A1
公开(公告)日：2009-02-26
申请号：US12219900
申请日：2008-07-30
申请人： Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai , Terunori Saitou
发明人： Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai , Terunori Saitou
IPC分类号： H01L33/00 , G02F1/136 , G09G3/12
CPC分类号： H01L27/1251 , H01L27/1229
摘要： The present invention provides a display device which forms a drive circuit using a bottom-gate-type TFT made of poly-Si which generates a small leak current in a periphery of a display region. A gate electrode is made of Mo having a high melting point, and a gate insulation film is formed on the gate electrode. A channel layer constituted of a poly-Si layer is formed on the gate insulation film, and the poly-Si layer is covered with an a-Si layer. An n+ Si layer is formed on the a-Si layer, and an SD electrode is formed on the n+ Si layer. Although holes are induced in the poly-Si layer when a negative voltage (inverse bias) is applied to the gate electrode, the holes cannot pass through the a-Si layer and hence, no drain current flows. Accordingly, it is possible to realize a bottom-gate-type TFT using poly-silicon which generates a small leak current.
摘要翻译：本发明提供一种使用由多晶硅制成的底栅型TFT形成驱动电路的显示装置，其在显示区域的周围产生小的漏电流。栅电极由具有高熔点的Mo制成，栅极绝缘膜形成在栅电极上。在栅极绝缘膜上形成由多晶硅层构成的沟道层，多晶硅层被a-Si层覆盖。在a-Si层上形成n + Si层，在n + Si层上形成SD电极。虽然当向栅电极施加负电压（反向偏压）时，在多晶硅层中感应到空穴，但是空穴不能通过a-Si层，因此不会流过漏极电流。因此，可以实现产生小漏电流的多晶硅的底栅型TFT。

10. 发明授权

US08624256B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08624256B2
公开(公告)日：2014-01-07
申请号：US12219900
申请日：2008-07-30
申请人： Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai , Terunori Saitou
发明人： Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai , Terunori Saitou
IPC分类号： H01L27/14
CPC分类号： H01L27/1251 , H01L27/1229
摘要： The present invention provides a display device which forms a drive circuit using a bottom-gate-type TFT made of poly-Si which generates a small leak current in a periphery of a display region. A gate electrode is made of Mo having a high melting point, and a gate insulation film is formed on the gate electrode. A channel layer constituted of a poly-Si layer is formed on the gate insulation film, and the poly-Si layer is covered with an a-Si layer. An n+Si layer is formed on the a-Si layer, and an SD electrode is formed on the n+Si layer. Although holes are induced in the poly-Si layer when a negative voltage (inverse bias) is applied to the gate electrode, the holes cannot pass through the a-Si layer and hence, no drain current flows. Accordingly, it is possible to realize a bottom-gate-type TFT using poly-silicon which generates a small leak current.
摘要翻译：本发明提供一种使用由多晶硅制成的底栅型TFT形成驱动电路的显示装置，其在显示区域的周围产生小的漏电流。栅电极由具有高熔点的Mo制成，栅极绝缘膜形成在栅电极上。在栅极绝缘膜上形成由多晶硅层构成的沟道层，多晶硅层被a-Si层覆盖。在a-Si层上形成n + Si层，在n + Si层上形成SD电极。虽然当向栅电极施加负电压（反向偏压）时，在多晶硅层中感应到空穴，但是空穴不能通过a-Si层，因此不会流过漏极电流。因此，可以实现产生小漏电流的多晶硅的底栅型TFT。

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