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1. 发明授权

US08368095B2 Nitride semiconductor light emitting device and method of fabricating nitride semiconductor laser device 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US08368095B2
公开(公告)日：2013-02-05
申请号：US11638582
申请日：2006-12-14
申请人： Takeshi Kamikawa , Yoshinobu Kawaguchi
发明人： Takeshi Kamikawa , Yoshinobu Kawaguchi
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/44 , H01S5/028 , H01S5/2036 , H01S5/22
摘要： There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride. There is also provided a method of fabricating a nitride semiconductor laser device having a cavity with a facet coated with a coating film, including the steps of: providing cleavage to form the facet of the cavity; and coating the facet of the cavity with a coating film formed of an oxynitride.
摘要翻译：提供一种具有涂覆有涂膜的发光部分的氮化物半导体发光器件，该发光部分由氮化物半导体形成，与发光部分接触的涂膜由氮氧化物形成。还提供了一种制造氮化物半导体激光器件的方法，该器件具有具有涂覆有涂膜的小面的空腔，包括以下步骤：提供切割以形成腔的小平面; 并用由氮氧化物形成的涂膜涂覆空腔的小平面。

2. 发明申请

US20120015465A1 Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device 有权
标题翻译：氮化物半导体发光器件，氮化物半导体发光器件的制造方法以及氮化物半导体晶体管器件
公开(公告)号：US20120015465A1
公开(公告)日：2012-01-19
申请号：US13200357
申请日：2011-09-23
申请人： Takeshi Kamikawa , Yoshinobu Kawaguchi
发明人： Takeshi Kamikawa , Yoshinobu Kawaguchi
IPC分类号： H01L33/26
CPC分类号： H01L29/7787 , B82Y20/00 , H01L29/2003 , H01L29/7786 , H01L33/44 , H01S5/028 , H01S5/22 , H01S5/34333
摘要： Example embodiments herein relate to a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and a method of manufacturing the nitride semiconductor light emitting device. Also provided is a nitride semiconductor transistor device including a nitride semiconductor layer and a gate insulating film which is in contact with the nitride semiconductor layer and includes an aluminum nitride crystal or an aluminum oxynitride crystal.
摘要翻译：本发明的实施例涉及包括形成在发光部分并且包括氮化铝晶体或氮氧化铝晶体的涂膜的氮化物半导体发光器件，以及制造氮化物半导体发光器件的方法。还提供了一种氮化物半导体晶体管器件，其包括与氮化物半导体层接触并包括氮化铝晶体或氮氧化铝晶体的氮化物半导体层和栅极绝缘膜。

3. 发明授权

US07970035B2 Nitride semiconductor laser element and external-cavity semiconductor laser device 有权
标题翻译：氮化物半导体激光元件和外腔半导体激光器件
公开(公告)号：US07970035B2
公开(公告)日：2011-06-28
申请号：US12406533
申请日：2009-03-18
申请人： Yoshinobu Kawaguchi , Takeshi Kamikawa
发明人： Yoshinobu Kawaguchi , Takeshi Kamikawa
IPC分类号： H01S5/00 , H01S3/08
CPC分类号： H01S5/028 , B82Y20/00 , H01S5/0287 , H01S5/0425 , H01S5/141 , H01S5/2215 , H01S5/34333
摘要： Disclosed are a nitride semiconductor laser element including a light emitting portion made of a nitride semiconductor, and an external-cavity semiconductor laser device using it. In the nitride semiconductor laser element, a coat film made of silicon oxynitride is formed on the light emitting portion, and the reflectance of the coat film to feedback light of laser light emitted from the light emitting portion is 0.5% or less.
摘要翻译：公开了包括由氮化物半导体制成的发光部分的氮化物半导体激光元件和使用它的外腔半导体激光器件。在氮化物半导体激光元件中，在发光部分上形成由氮氧化硅制成的涂膜，并且涂膜对从发光部分发射的激光的反射光的反射率为0.5％以下。

4. 发明授权

US07940003B2 Light emitting device and method of fabricating a light emitting device 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US07940003B2
公开(公告)日：2011-05-10
申请号：US12155978
申请日：2008-06-12
申请人： Takeshi Kamikawa , Yoshinobu Kawaguchi
发明人： Takeshi Kamikawa , Yoshinobu Kawaguchi
IPC分类号： H05B33/00
CPC分类号： H01S5/028 , B82Y20/00 , H01L2224/48091 , H01L2224/48247 , H01L2924/16152 , H01S5/0021 , H01S5/02212 , H01S5/02216 , H01S5/0282 , H01S5/0286 , H01S5/0287 , H01S5/0683 , H01S5/2009 , H01S5/2214 , H01S5/2231 , H01S5/34333 , Y10S362/80 , H01L2924/00014
摘要： The present invention comprises a light absorption film 5 which is formed on the outermost surface of an end surface on the light emitting side of a chip used in a laser device, typically, a laser chip 1 and which absorbs part of the light emitted. By forming this light absorption film 5, the collection and accumulation of pollutants which are caused by reacting with light emitted are curbed.
摘要翻译：本发明包括光吸收膜5，其形成在激光装置中使用的芯片的发光侧的端面的最外表面上，通常为激光芯片1，并且其吸收部分发光的光。通过形成该光吸收膜5，抑制由与发出的光反应引起的污染物的收集和积聚。

5. 发明授权

US07750363B2 Nitride semiconductor light-emitting device having an end face coating film and method of manufacturing the same 有权
标题翻译：具有端面涂膜的氮化物半导体发光器件及其制造方法
公开(公告)号：US07750363B2
公开(公告)日：2010-07-06
申请号：US11543085
申请日：2006-10-05
申请人： Takeshi Kamikawa , Yoshinobu Kawaguchi
发明人： Takeshi Kamikawa , Yoshinobu Kawaguchi
IPC分类号： H01L29/74
CPC分类号： H01S5/2231 , B82Y20/00 , H01L33/44 , H01S5/0021 , H01S5/028 , H01S5/0282 , H01S5/34333
摘要： In a nitride semiconductor laser bar including a group III-V nitride semiconductor layer, on the front-side cavity end face, a separation layer of aluminum nitride is laid, and further on the separation layer, an end face coating film of aluminum oxide is laid. Likewise, on the rear-side cavity end face, a separation layer of aluminum nitride is laid, and further on the separation layer, an end face coating film of an aluminum oxide/TiO2 multilayer film is laid.
摘要翻译：在包括III-V族氮化物半导体层的氮化物半导体激光器棒中，在前侧腔端面上铺设氮化铝的分离层，并且在分离层上，氧化铝的端面涂膜为铺了同样地，在后侧腔端面上，放置氮化铝的分离层，并且在分离层上还放置有氧化铝/ TiO 2多层膜的端面涂膜。

6. 发明申请

US20090116528A1 Nitride semiconductor laser device 有权
标题翻译：氮化物半导体激光器件
公开(公告)号：US20090116528A1
公开(公告)日：2009-05-07
申请号：US12285337
申请日：2008-10-02
申请人： Yoshinobu Kawaguchi , Takeshi Kamikawa , Shigetoshi Ito
发明人： Yoshinobu Kawaguchi , Takeshi Kamikawa , Shigetoshi Ito
IPC分类号： H01S5/04
CPC分类号： H01S5/32341 , H01S5/028 , H01S5/0287 , H01S5/2214 , H01S5/3202
摘要： A nitride semiconductor laser device has a multilayer structure formed by stacking a plurality of nitride semiconductor layers made of hexagonal nitride semiconductors, while the multilayer structure is provided with a waveguide structure for guiding a laser beam, the nitride semiconductor layers forming the multilayer structure are stacked in a direction substantially perpendicular to the c-axes of the hexagonal nitride semiconductors constituting the nitride semiconductor layers, a first cavity facet forming a side surface of the waveguide structure is a c-plane having Ga-polarity, a second cavity facet forming another side surface of the waveguide structure opposed to the first cavity facet is a c-plane having N-polarity, a crystalline nitrogen-containing film is formed on the surface of the first cavity facet, and the reflectance of the first cavity facet is smaller than the reflectance of the second cavity facet.
摘要翻译：氮化物半导体激光器件具有通过堆叠由六方氮化物半导体制成的多个氮化物半导体层而形成的多层结构，而多层结构设置有用于引导激光束的波导结构，形成多层结构的氮化物半导体层被堆叠在与构成氮化物半导体层的六方氮化物半导体的c轴大致垂直的方向上，形成波导结构的侧面的第一空腔面是具有Ga极性的c面，形成另一侧的第二腔面与第一腔面相对的波导结构的表面是具有N极性的c面，在第一腔面的表面上形成结晶含氮膜，第一腔面的反射率小于第二腔面的反射率。

7. 发明申请

US20080291961A1 Nitride semiconductor light emitting device and method of fabricating nitride semiconductor laser device 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20080291961A1
公开(公告)日：2008-11-27
申请号：US12153756
申请日：2008-05-23
申请人： Takeshi Kamikawa , Yoshinobu Kawaguchi
发明人： Takeshi Kamikawa , Yoshinobu Kawaguchi
IPC分类号： H01S5/323 , H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/44 , H01S5/028 , H01S5/2036 , H01S5/22
摘要： There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride. There is also provided a method of fabricating a nitride semiconductor laser device having a cavity with a facet coated with a coating film, including the steps of: providing cleavage to form the facet of the cavity; and coating the facet of the cavity with a coating film formed of an oxynitride.
摘要翻译：提供一种具有涂覆有涂膜的发光部分的氮化物半导体发光器件，该发光部分由氮化物半导体形成，与发光部分接触的涂膜由氮氧化物形成。还提供了一种制造氮化物半导体激光器件的方法，该器件具有具有涂覆有涂膜的小面的空腔，包括以下步骤：提供切割以形成腔的小平面; 并用由氮氧化物形成的涂膜涂覆空腔的小平面。

8. 发明申请

US20100316082A1 NITRIDE SEMICONDUCTOR LASER CHIP 有权
标题翻译：硝酸盐半导体激光芯片
公开(公告)号：US20100316082A1
公开(公告)日：2010-12-16
申请号：US12785523
申请日：2010-05-24
申请人： Yoshinobu Kawaguchi , Takeshi Kamikawa
发明人： Yoshinobu Kawaguchi , Takeshi Kamikawa
IPC分类号： H01S5/323
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0282 , H01S5/22
摘要： A nitride semiconductor laser chip is provided that offers sufficient reliability even at high output. The nitride semiconductor laser chip has a nitride semiconductor layer formed on a substrate, a resonator facet formed on the nitride semiconductor layer, and a coating film formed on the resonator facet and containing Ar. The coating film has, in a region contiguous with the resonator facet and in the vicinity thereof, a low-Ar region with a low Ar content and, on the side of this low-Ar region opposite from the resonator facet, a high-Ar region with a higher Ar content than the low-Ar region.
摘要翻译：提供氮化物半导体激光器芯片，其即使在高输出时也提供足够的可靠性。氮化物半导体激光器芯片具有形成在衬底上的氮化物半导体层，形成在氮化物半导体层上的谐振器面，以及形成在谐振器面上并包含Ar的涂膜。涂膜在与谐振器面相邻并且在其附近的区域中具有低Ar含量的低Ar区，并且在与谐振器面相反的该低Ar区一侧具有高Ar Ar含量高于低Ar区的区域。

9. 发明授权

US07820542B2 Nitride semiconductor light-emitting device and method for fabrication thereof 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US07820542B2
公开(公告)日：2010-10-26
申请号：US12659149
申请日：2010-02-26
申请人： Masahumi Kondou , Takeshi Kamikawa , Yoshinobu Kawaguchi
发明人： Masahumi Kondou , Takeshi Kamikawa , Yoshinobu Kawaguchi
IPC分类号： H01L21/3205
CPC分类号： H01S5/028 , B82Y20/00 , H01S5/0021 , H01S5/0281 , H01S5/0282 , H01S5/2231 , H01S5/34333
摘要： An adhesion layer of a hexagonal crystal is laid on a facet an optical resonator of a nitride semiconductor laser bar having a nitride-based III-V group compound semiconductor layer, and a facet coat is laid on the adhesion layer. In this way, a structure in which the facet coat is laid on the adhesion layer is obtained.
摘要翻译：在具有氮化物III-V族化合物半导体层的氮化物半导体激光棒的光谐振器的面上放置六方晶的粘附层，并且在该粘合层上铺设小面涂层。以这种方式，获得其中将小面涂层铺设在粘合层上的结构。

10. 发明授权

US07792169B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07792169B2
公开(公告)日：2010-09-07
申请号：US11713760
申请日：2007-03-05
申请人： Yoshinobu Kawaguchi , Takeshi Kamikawa
发明人： Yoshinobu Kawaguchi , Takeshi Kamikawa
IPC分类号： H01S3/04
CPC分类号： H01S5/0287 , B82Y20/00 , H01L33/44 , H01S5/0021 , H01S5/028 , H01S5/0282 , H01S5/221 , H01S5/223 , H01S5/2231 , H01S5/34333 , H01S2304/00
摘要： A nitride semiconductor light emitting device includes a first coat film of aluminum nitride or aluminum oxynitride formed at a light emitting portion and a second coat film of aluminum oxide formed on the first coat film. The thickness of the second coat film is at least 80 nm and at most 1000 nm. Here, the thickness of the first coat film is preferably at least 6 nm and at most 200 nm.
摘要翻译：氮化物半导体发光器件包括在第一涂膜上形成的在发光部分形成的氮化铝或氮氧化铝的第一涂膜和氧化铝的第二涂膜。第二涂膜的厚度为80nm以上1000nm以下。这里，第一涂膜的厚度优选为6nm以上200nm以下。

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