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1. 发明申请

US20060132984A1 Magnetic memory device having yoke layer on write interconnection and method of manufacturing the same 有权
标题翻译：具有写入互连上的磁轭层的磁性存储器件及其制造方法
公开(公告)号：US20060132984A1
公开(公告)日：2006-06-22
申请号：US11060301
申请日：2005-02-18
申请人： Takeshi Kajiyama , Tomomasa Ueda , Tatsuya Kishi , Hiroaki Yoda , Hisanori Aikawa , Masatoshi Yoshikawa
发明人： Takeshi Kajiyama , Tomomasa Ueda , Tatsuya Kishi , Hiroaki Yoda , Hisanori Aikawa , Masatoshi Yoshikawa
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y10/00 , G11C11/16 , H01L27/222 , H01L27/224 , H01L27/228 , H01L43/12
摘要： A magnetic memory device includes a magnetoresistance effect element, and a first write interconnection which is arranged under the magnetoresistance effect element and has a first interconnection layer and a first yoke layer, the first interconnection layer having a portion projecting toward the magnetoresistance effect element, and the first yoke layer including a first, a second, and third regions. And the device includes a second write interconnection which is arranged above the magnetoresistance effect element and has a second interconnection layer and a second yoke layer, the second interconnection layer having a portion projecting toward the magnetoresistance effect element, and the second yoke layer including a fourth, a fifth, and sixth regions.
摘要翻译：一种磁存储器件包括磁阻效应元件和布置在磁阻效应元件下方并具有第一互连层和第一磁轭层的第一写入互连，第一互连层具有向磁阻效应元件突出的部分，以及所述第一轭层包括第一，第二和第三区域。并且该器件包括布置在磁阻效应元件上方并具有第二互连层和第二磁轭层的第二写入互连，第二互连层具有朝向磁阻效应元件突出的部分，第二磁轭层包括第四配线，第五和第六个地区。

2. 发明授权

US07064402B2 Magnetic random access memory 失效
公开(公告)号：US07064402B2
公开(公告)日：2006-06-20
申请号：US11189851
申请日：2005-07-27
申请人： Takeshi Kajiyama , Tomomasa Ueda , Tatsuya Kishi , Hisanori Aikawa , Masatoshi Yoshikawa , Yoshiaki Asao , Hiroaki Yoda
发明人： Takeshi Kajiyama , Tomomasa Ueda , Tatsuya Kishi , Hisanori Aikawa , Masatoshi Yoshikawa , Yoshiaki Asao , Hiroaki Yoda
IPC分类号： H01L29/82
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A magnetic random access memory concerning an example of the present invention comprises a magneto resistive element, a first insulating layer which covers side surfaces of the magneto resistive element, a second insulating layer which is arranged on the first insulating layer and has a first groove on the magneto resistive element, a write line which fills the first groove and is connected with the magneto resistive element, and a third insulating layer which is arranged between the first and second insulating layers except a bottom portion of the first groove and has an etching selection ratio with respect to at least the first and second insulating layers.

3. 发明申请

US20050259464A1 Magnetic random access memory 失效
标题翻译：磁性随机存取存储器
公开(公告)号：US20050259464A1
公开(公告)日：2005-11-24
申请号：US11189851
申请日：2005-07-27
申请人： Takeshi Kajiyama , Tomomasa Ueda , Tatsuya Kishi , Hisanori Aikawa , Masatoshi Yoshikawa , Yoshiaki Asao , Hiroaki Yoda
发明人： Takeshi Kajiyama , Tomomasa Ueda , Tatsuya Kishi , Hisanori Aikawa , Masatoshi Yoshikawa , Yoshiaki Asao , Hiroaki Yoda
IPC分类号： H01L27/105 , G11B5/33 , G11C11/14 , G11C11/16 , H01L21/8246 , H01L27/22 , H01L43/08 , H01L43/12
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A magnetic random access memory concerning an example of the present invention comprises a magneto resistive element, a first insulating layer which covers side surfaces of the magneto resistive element, a second insulating layer which is arranged on the first insulating layer and has a first groove on the magneto resistive element, a write line which fills the first groove and is connected with the magneto resistive element, and a third insulating layer which is arranged between the first and second insulating layers except a bottom portion of the first groove and has an etching selection ratio with respect to at least the first and second insulating layers.
摘要翻译：关于本发明的实例的磁性随机存取存储器包括磁阻元件，覆盖磁阻元件的侧表面的第一绝缘层，布置在第一绝缘层上并具有第一凹槽的第二绝缘层磁阻元件，填充第一沟槽并与磁阻元件连接的写入线以及布置在除了第一沟槽的底部之外的第一和第二绝缘层之间的第三绝缘层，并且具有蚀刻选择至少相对于第一绝缘层和第二绝缘层。

4. 发明授权

US07200034B2 Magnetic memory device having yoke layer on write interconnection and method of manufacturing the same 有权
标题翻译：具有写入互连上的磁轭层的磁性存储器件及其制造方法
公开(公告)号：US07200034B2
公开(公告)日：2007-04-03
申请号：US11060301
申请日：2005-02-18
申请人： Takeshi Kajiyama , Tomomasa Ueda , Tatsuya Kishi , Hiroaki Yoda , Hisanori Aikawa , Masatoshi Yoshikawa
发明人： Takeshi Kajiyama , Tomomasa Ueda , Tatsuya Kishi , Hiroaki Yoda , Hisanori Aikawa , Masatoshi Yoshikawa
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B82Y10/00 , G11C11/16 , H01L27/222 , H01L27/224 , H01L27/228 , H01L43/12
摘要： A magnetic memory device includes a magnetoresistance effect element, and a first write interconnection which is arranged under the magnetoresistance effect element and has a first interconnection layer and a first yoke layer, the first interconnection layer having a portion projecting toward the magnetoresistance effect element, and the first yoke layer including a first, a second, and third regions. And the device includes a second write interconnection which is arranged above the magnetoresistance effect element and has a second interconnection layer and a second yoke layer, the second interconnection layer having a portion projecting toward the magnetoresistance effect element, and the second yoke layer including a fourth, a fifth, and sixth regions.
摘要翻译：一种磁存储器件包括磁阻效应元件和布置在磁阻效应元件下方并具有第一互连层和第一磁轭层的第一写入互连，第一互连层具有向磁阻效应元件突出的部分，以及所述第一轭层包括第一，第二和第三区域。并且该器件包括布置在磁阻效应元件上方并具有第二互连层和第二磁轭层的第二写入互连，第二互连层具有朝向磁阻效应元件突出的部分，第二磁轭层包括第四配线，第五和第六个地区。

5. 发明申请

US20050199925A1 Magnetic random access memory 失效
公开(公告)号：US20050199925A1
公开(公告)日：2005-09-15
申请号：US10847384
申请日：2004-05-18
申请人： Takeshi Kajiyama , Tomomasa Ueda , Tatsuya Kishi , Hisanori Aikawa , Masatoshi Yoshikawa , Yoshiaki Asao , Hiroaki Yoda
发明人： Takeshi Kajiyama , Tomomasa Ueda , Tatsuya Kishi , Hisanori Aikawa , Masatoshi Yoshikawa , Yoshiaki Asao , Hiroaki Yoda
IPC分类号： H01L27/105 , G11B5/33 , G11C11/14 , G11C11/16 , H01L21/8246 , H01L27/22 , H01L43/08 , H01L43/12
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A magnetic random access memory concerning an example of the present invention comprises a magneto resistive element, a first insulating layer which covers side surfaces of the magneto resistive element, a second insulating layer which is arranged on the first insulating layer and has a first groove on the magneto resistive element, a write line which fills the first groove and is connected with the magneto resistive element, and a third insulating layer which is arranged between the first and second insulating layers except a bottom portion of the first groove and has an etching selection ratio with respect to at least the first and second insulating layers.

6. 发明授权

US06984865B2 Magnetic random access memory 失效
标题翻译：磁性随机存取存储器
公开(公告)号：US06984865B2
公开(公告)日：2006-01-10
申请号：US10847384
申请日：2004-05-18
申请人： Takeshi Kajiyama , Tomomasa Ueda , Tatsuya Kishi , Hisanori Aikawa , Masatoshi Yoshikawa , Yoshiaki Asao , Hiroaki Yoda
发明人： Takeshi Kajiyama , Tomomasa Ueda , Tatsuya Kishi , Hisanori Aikawa , Masatoshi Yoshikawa , Yoshiaki Asao , Hiroaki Yoda
IPC分类号： H01L29/82
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A magnetic random access memory concerning an example of the present invention comprises a magneto resistive element, a first insulating layer which covers side surfaces of the magneto resistive element, a second insulating layer which is arranged on the first insulating layer and has a first groove on the magneto resistive element, a write line which fills the first groove and is connected with the magneto resistive element, and a third insulating layer which is arranged between the first and second insulating layers except a bottom portion of the first groove and has an etching selection ratio with respect to at least the first and second insulating layers.
摘要翻译：关于本发明的实例的磁性随机存取存储器包括磁阻元件，覆盖磁阻元件的侧表面的第一绝缘层，布置在第一绝缘层上并具有第一凹槽的第二绝缘层磁阻元件，填充第一沟槽并与磁阻元件连接的写入线以及布置在除了第一沟槽的底部之外的第一和第二绝缘层之间的第三绝缘层，并且具有蚀刻选择至少相对于第一绝缘层和第二绝缘层。

7. 发明授权

US06927468B2 Magnetic random access memory 失效
标题翻译：磁性随机存取存储器
公开(公告)号：US06927468B2
公开(公告)日：2005-08-09
申请号：US10379915
申请日：2003-03-06
申请人： Hiroaki Yoda , Yoshiaki Asao , Tomomasa Ueda , Junichi Miyamoto , Tatsuya Kishi , Minoru Amano , Takeshi Kajiyama , Hisanori Aikawa
发明人： Hiroaki Yoda , Yoshiaki Asao , Tomomasa Ueda , Junichi Miyamoto , Tatsuya Kishi , Minoru Amano , Takeshi Kajiyama , Hisanori Aikawa
IPC分类号： G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L29/82
CPC分类号： G11C11/16
摘要： A write line is covered with a yoke material. The recording layer of an MTJ element is exchange-coupled to the yoke material. The total magnetic volume ΣMsi×ti of the recording layer of the MTJ element and a portion of the yoke material that is exchange-coupled to the recording layer is smaller than the magnetic volume ΣMsi′×ti′ of the remaining portion of the yoke material that covers the write line.
摘要翻译：写线用轭材料覆盖。 MTJ元件的记录层与磁轭材料交换耦合。 MTJ元件的记录层的总磁体体积SigmaMsixti和与记录层交换耦合的磁轭材料的一部分小于磁轭材料的剩余部分的磁体积SigmaMsi'xti' 写行。

8. 发明授权

US07848136B2 Magnetic memory 失效
标题翻译：磁记忆
公开(公告)号：US07848136B2
公开(公告)日：2010-12-07
申请号：US12100969
申请日：2008-04-10
申请人： Hisanori Aikawa , Tomomasa Ueda , Tatsuya Kishi , Takeshi Kajiyama , Yoshiaki Asao , Hiroaki Yoda
发明人： Hisanori Aikawa , Tomomasa Ueda , Tatsuya Kishi , Takeshi Kajiyama , Yoshiaki Asao , Hiroaki Yoda
IPC分类号： G11C11/15
CPC分类号： G11B5/39
摘要： It is possible to reduce writing current without causing fluctuation of the writing characteristic. A magnetic memory includes: a magnetoresistance effect element having a magnetization pinned layer whose magnetization direction is pinned, a storage layer whose magnetization direction is changeable, and a non-magnetic layer provided between the magnetization pinned layer and the storage layer; and a first wiring layer which is electrically connected to the magnetoresistance effect element and extends in a direction substantially perpendicular to a direction of an easy magnetization axis of the storage layer, an end face of the magnetoresistance effect element substantially perpendicular to the direction of the easy magnetization axis of the storage layer and an end face of the first wiring layer substantially perpendicular to the direction of the easy magnetization axis being positioned on the same plane.
摘要翻译：可以减小写入电流而不引起写入特性的波动。磁存储器包括：磁阻效应元件，具有其磁化方向被钉扎的磁化钉扎层，其磁化方向可变的存储层和设置在磁化钉扎层与存储层之间的非磁性层; 以及第一布线层，其电连接到所述磁阻效应元件并且沿着与所述存储层的容易磁化轴方向大致垂直的方向延伸，所述磁阻效应元件的端面基本上垂直于所述容易的方向存储层的磁化轴和基本上垂直于易磁化轴的方向的第一布线层的端面位于同一平面上。

9. 发明申请

US20050141148A1 Magnetic memory 审中-公开
标题翻译：磁记忆
公开(公告)号：US20050141148A1
公开(公告)日：2005-06-30
申请号：US11000093
申请日：2004-12-01
申请人： Hisanori Aikawa , Tomomasa Ueda , Tatsuya Kishi , Takeshi Kajiyama , Yoshiaki Asao , Hiroaki Yoda
发明人： Hisanori Aikawa , Tomomasa Ueda , Tatsuya Kishi , Takeshi Kajiyama , Yoshiaki Asao , Hiroaki Yoda
IPC分类号： G11B5/33 , G11B5/39
CPC分类号： G11B5/39
摘要： It is possible to reduce writing current without causing fluctuation of the writing characteristic. A magnetic memory includes: a magnetoresistance effect element having a magnetization pinned layer whose magnetization direction is pinned, a storage layer whose magnetization direction is changeable, and a non-magnetic layer provided between the magnetization pinned layer and the storage layer; and a first wiring layer which is electrically connected to the magnetoresistance effect element and extends in a direction substantially perpendicular to a direction of an easy magnetization axis of the storage layer, an end face of the magnetoresistance effect element substantially perpendicular to the direction of the easy magnetization axis of the storage layer and an end face of the first wiring layer substantially perpendicular to the direction of the easy magnetization axis being positioned on the same plane.
摘要翻译：可以减小写入电流而不引起写入特性的波动。磁存储器包括：磁阻效应元件，具有其磁化方向被钉扎的磁化钉扎层，其磁化方向可变的存储层和设置在磁化钉扎层与存储层之间的非磁性层; 以及第一布线层，其电连接到所述磁阻效应元件并且沿着与所述存储层的容易磁化轴方向大致垂直的方向延伸，所述磁阻效应元件的端面基本上垂直于所述容易的方向存储层的磁化轴和基本上垂直于易磁化轴的方向的第一布线层的端面位于同一平面上。

10. 发明授权

US07564109B2 MRAM and method of manufacturing the same 失效
标题翻译： MRAM及其制造方法
公开(公告)号：US07564109B2
公开(公告)日：2009-07-21
申请号：US10917300
申请日：2004-08-13
申请人： Takeshi Kajiyama , Hisanori Aikawa , Tomomasa Ueda , Tatsuya Kishi , Masatoshi Yoshikawa
发明人： Takeshi Kajiyama , Hisanori Aikawa , Tomomasa Ueda , Tatsuya Kishi , Masatoshi Yoshikawa
IPC分类号： G11C11/00 , G11C11/14 , H01L21/8246
CPC分类号： H01L27/228 , B82Y10/00
摘要： A magnetic memory device includes a first write wiring line including a wiring layer formed in a trench in an insulation layer, a barrier metal layer buried in the trench over the wiring layer. And the device includes a magneto-resistance effect element provided on the first write wiring line.
摘要翻译：磁存储器件包括：第一写入布线，其包括形成在绝缘层中的沟槽中的布线层;掩埋在布线层上的沟槽中的阻挡金属层。并且该器件包括设置在第一写入布线上的磁阻效应元件。

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