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    • 4. 发明申请
    • SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    • 半导体集成电路设备
    • US20100182076A1
    • 2010-07-22
    • US12688967
    • 2010-01-18
    • Hiroyuki MIZUNOKiyoo ITOHMasanao YAMAOKA
    • Hiroyuki MIZUNOKiyoo ITOHMasanao YAMAOKA
    • G05F1/10
    • H03K19/0016
    • A semiconductor integrated circuit device achieving an active state in which a high speed operation is performed and an inactive state in which a low leakage state is retained while an internal logical state is retained, and a transition between the two states can be achieved at high speed with low noise and low power. A power control circuit provided between a first power-supply line for providing a first external power-supply voltage and a second power-supply line for providing a second external power-supply voltage includes an output MOSFET. A constant OFF current flows in the MOSFET even if a gate and a source of the output MOSFET are put in the same voltage, and a threshold voltage of the output MOSFET is smaller than that of an internal circuit MOSFET.
    • 实现进行高速运转的活动状态的半导体集成电路器件和保持内部逻辑状态时保持低泄漏状态的无效状态,并且可以高速地实现两种状态之间的转变 噪音低,功耗低。 设置在用于提供第一外部电源电压的第一电源线和用于提供第二外部电源电压的第二电源线之间的功率控制电路包括输出MOSFET。 即使输出MOSFET的栅极和源极处于相同的电压,并且输出MOSFET的阈值电压小于内部电路MOSFET的阈值电压,恒定的关断电流也流入MOSFET。
    • 5. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • US20070291564A1
    • 2007-12-20
    • US11761642
    • 2007-06-12
    • Hiroyuki MIZUNOTakeshi SakataNobuhiro OodairaTakao WatanabeYusuke Kanno
    • Hiroyuki MIZUNOTakeshi SakataNobuhiro OodairaTakao WatanabeYusuke Kanno
    • G11C7/00
    • G11C11/4076G11C7/04G11C7/065G11C7/08G11C7/12G11C7/18G11C11/4091G11C11/4094G11C11/4097G11C2207/002G11C2207/005
    • The present invention provides a sense circuit for DRAM memory cell to cover the events that a sense time becomes remarkably longer when a power source voltage is lowered, a sense time under the low voltage condition becomes shorter when temperature rises and a sense time changes to a large extent for fluctuation of processes. The present invention provides the following typical effects A switch means is provided between the bit line BL and local bit line LBL connected to the memory cells for isolation and coupling of these bit lines The bit line BL is precharged to the voltage of VDL/2, while the local bit line LBL is precharged to the voltage of VDL. The VDL is the maximum amplitude voltage of the bit line BL A sense amplifier SA comprises a first circuit including a differential MOS pair having the gate connected to the bit line BL and a second circuit connected to the local bit line LBL for full amplitude amplification and for holding the data. When the bit line BL and local bit line LBL are capacitance-coupled via a capacitor, it is recommended to use a latch type sense amplifier SA connected to the local bit line LBL.
    • 本发明提供了一种用于DRAM存储单元的感测电路,以覆盖当电源电压降低时感测时间变得显着更长的事件,当温度升高时,低电压条件下的感测时间变短,感测时间变为 过程波动很大程度。 本发明提供以下典型的效果:位线BL与连接到存储单元的局部位线LBL之间的开关装置用于隔离和耦合这些位线位线BL被预充电到VDL / 2的电压, 而局部位线LBL被预充电到VDL的电压。 VDL是位线BLA的最大幅度电压。读出放大器SA包括包括连接到位线BL的栅极的差分MOS对的第一电路和连接到用于全幅放大的局部位线LBL的第二电路, 用于保存数据。 当位线BL和本地位线LBL通过电容器电容耦合时,建议使用连接到局部位线LBL的锁存型读出放大器SA。
    • 6. 发明申请
    • NAVIGATION SYSTEM, NAVIGATION METHOD, AND COMPUTER-READABLE STORAGE MEDIUM
    • 导航系统,导航方法和计算机可读存储介质
    • US20130035847A1
    • 2013-02-07
    • US13530917
    • 2012-06-22
    • Junki YAMAKAWAHiroyuki MIZUNO
    • Junki YAMAKAWAHiroyuki MIZUNO
    • G01C21/00
    • G01C21/3484
    • Navigation systems, methods, and programs acquire evaluation information for evaluating the driving of a vehicle, evaluate the driver's driving operation for each evaluation interval having a predetermined travel distance based on the evaluation information, and display a past evaluation result and a current evaluation result at a position corresponding to each evaluation interval on a map in a mode that differs between the past evaluation result and the current evaluation result. When the vehicle arrives at an end point of the evaluation interval of the past travel from the same direction as during the past travel time, the systems, methods, and programs evaluate the driver's driving operation for a current evaluation interval along a travel track of the current travel and display the current evaluation result on the current evaluation interval at a position which corresponds to the current evaluation interval and at which the past evaluation result is displayed.
    • 导航系统,方法和程序获取用于评估车辆驾驶的评估信息,基于评估信息评估具有预定行驶距离的每个评估间隔的驾驶员的驾驶操作,并且将过去的评估结果和当前评估结果显示在 在与之前的评价结果​​和当前的评价结果​​不同的模式中,对应于地图上的各评价间隔的位置。 当车辆从与过去行驶时间相同的方向到达过去行驶的评估间隔的终点时,系统,方法和程序评估驾驶员对沿着行驶轨迹的当前评估间隔的驾驶操作 电流行进,​​并且在与当前评估间隔对应的位置处显示当前评估结果,并且显示过去评估结果。
    • 9. 发明申请
    • INJECTION MOLDING MACHINE
    • 注塑机
    • US20130026961A1
    • 2013-01-31
    • US13556320
    • 2012-07-24
    • Noritaka OKADAHiroshi MORITAHiroyuki MIZUNOAtsushi KATO
    • Noritaka OKADAHiroshi MORITAHiroyuki MIZUNOAtsushi KATO
    • H02P6/00
    • H02P6/00B29C45/7666B29C2045/1792B29C2045/7673Y02P70/26Y02P70/261
    • An injection molding machine includes a motor; a driver circuit; a rectifying part; a capacitor provided between the driver circuit and the rectifying part; a bridge circuit that converts direct electric power between the driver circuit and the rectifying part into alternating electric power; a harmonics component reducing part connected to an alternating side of the bridge circuit; and a regenerative line connected to the rectifying part in parallel, wherein the bridge circuit and the harmonics component reducing part are provided in the regenerative line, and plural switching elements of the bridge circuit are turned on or off such that electric power of the motor is regenerated when a voltage of the capacitor is greater than or equal to a predetermined value, and all the switching elements are turned off when the voltage of the capacitor is less than the predetermined value.
    • 注射成型机包括马达; 驱动电路; 整改部分 设置在驱动电路和整流部之间的电容器; 将驱动电路和整流部之间的直接电力转换为交流电力的桥式电路; 连接到桥接电路的交替侧的谐波分量减少部分; 以及并联连接到整流部的再生线,其中,所述桥接电路和所述谐波成分减少部设置在所述再生线路中,所述桥接电路的多个开关元件导通或截止,使得所述电动机的电力为 当电容器的电压大于或等于预定值时再生,并且当电容器的电压小于预定值时,所有开关元件都截止。