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1. 发明授权

US08560977B2 Drop recipe creating method, database creating method and medium 有权
标题翻译：删除配方创建方法，数据库创建方法和介质
公开(公告)号：US08560977B2
公开(公告)日：2013-10-15
申请号：US13238615
申请日：2011-09-21
申请人： Yasuo Matsuoka , Takumi Ota , Ryoichi Inanami
发明人： Yasuo Matsuoka , Takumi Ota , Ryoichi Inanami
IPC分类号： G06F17/50 , H01L21/302
CPC分类号： G06F17/30289 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： According to one embodiment, a plurality of test drop recipes are first created based on design data on a semiconductor integrated circuit. Based on a defect inspection result of a pattern of a hardening resin material, which is formed by pressing a template on which patterns of the semiconductor integrated circuit are formed onto the hardening resin material applied to a substrate to be processed by use of the test drop recipes, a drop recipe with least defects is selected per press position on the substrate to be processed from the test drop recipes. The selected drop recipes for respective press positions are collected per functional circuit block configuring the semiconductor integrated circuit, thereby to generate a drop recipe creation assistant database.
摘要翻译：根据一个实施例，首先基于半导体集成电路上的设计数据创建多个测试投影配方。基于硬化树脂材料的图案的缺陷检查结果，其通过将形成有半导体集成电路的图案的模板按压到通过使用测试滴的待处理基板上的硬化树脂材料上而形成根据测试液滴配方，每个按压位置在待处理的基板上选择最少缺陷的落料配方。根据构成半导体集成电路的功能电路块收集各个按压位置的所选择的放置配方，从而生成放置配方创建辅助数据库。

2. 发明授权

US08221827B2 Patterning method 有权
标题翻译：图案化方法
公开(公告)号：US08221827B2
公开(公告)日：2012-07-17
申请号：US12549232
申请日：2009-08-27
申请人： Hiroshi Tokue , Ikuo Yoneda , Shinji Mikami , Takumi Ota
发明人： Hiroshi Tokue , Ikuo Yoneda , Shinji Mikami , Takumi Ota
IPC分类号： B05D5/00
CPC分类号： B29C33/424 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： A patterning method according to an embodiment of the present invention comprises: acquiring information about a surface state of an underlying film formed on a substrate; determining, based on the surface state, whether irregularity/foreign matter is present in each shot region in which a pattern is to be formed; and solidifying a resist agent while a first template, when it is determined that no irregularity/foreign matter is present in the shot region, or a second template that is different from the first template, when it is determined that irregularity/foreign matter is present in the shot region, is brought close to the underlying film on the shot region at a certain distance with the resist agent therebetween.
摘要翻译：根据本发明的实施例的图案化方法包括：获取关于形成在基板上的底层膜的表面状态的信息; 基于表面状态确定在要形成图案的每个拍摄区域中是否存在不规则/异物; 并且当确定存在不规则/异物时，当确定在射击区域中不存在不规则/异物或与第一模板不同的第二模板时，第一模板固化抗蚀剂在射出区域中，与其间的抗蚀剂在一定距离处使其与射出区域上的底层膜接近。

3. 发明申请

US20120131056A1 DROP RECIPE CREATING METHOD, DATABASE CREATING METHOD AND MEDIUM 有权
标题翻译： DROP RECIPE CREATING METHOD，DATABASE CREATING METHOD AND MEDIUM
公开(公告)号：US20120131056A1
公开(公告)日：2012-05-24
申请号：US13238615
申请日：2011-09-21
申请人： Yasuo Matsuoka , Takumi Ota , Ryoichi Inanami
发明人： Yasuo Matsuoka , Takumi Ota , Ryoichi Inanami
IPC分类号： G06F17/30
CPC分类号： G06F17/30289 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： According to one embodiment, a plurality of test drop recipes are first created based on design data on a semiconductor integrated circuit. Based on a defect inspection result of a pattern of a hardening resin material, which is formed by pressing a template on which patterns of the semiconductor integrated circuit are formed onto the hardening resin material applied to a substrate to be processed by use of the test drop recipes, a drop recipe with least defects is selected per press position on the substrate to be processed from the test drop recipes. The selected drop recipes for respective press positions are collected per functional circuit block configuring the semiconductor integrated circuit, thereby to generate a drop recipe creation assistant database.
摘要翻译：根据一个实施例，首先基于半导体集成电路上的设计数据创建多个测试投影配方。基于硬化树脂材料的图案的缺陷检查结果，其通过将形成有半导体集成电路的图案的模板按压到通过使用测试滴的待处理基板上的硬化树脂材料上而形成根据测试液滴配方，每个按压位置在待处理的基板上选择最少缺陷的落料配方。根据构成半导体集成电路的功能电路块收集各个按压位置的所选择的放置配方，从而生成放置配方创建辅助数据库。

4. 发明申请

US20120013042A1 IMPRINT TEMPLATE AND PATTERN FORMING METHOD 审中-公开
标题翻译：印模和图案形成方法
公开(公告)号：US20120013042A1
公开(公告)日：2012-01-19
申请号：US13160396
申请日：2011-06-14
申请人： Takumi OTA
发明人： Takumi OTA
IPC分类号： B29C59/02
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Certain embodiments provide an imprint template which has a first member formed with patterns having concavities and convexities on one side thereof, and in the state in which the one side is contacted with a photocuring imprint material coated onto a substrate to be processed, cures the imprint material by light emitted from above the other side of the first member to transfer the patterns onto the imprint material. The template is provided with a second member in an end region thereof. The second member has a larger contact angle with respect to the imprint material than the first member.
摘要翻译：某些实施例提供一种压印模板，其具有在其一侧上形成有凹凸的图案的第一构件，并且在一侧与涂覆在待处理基板上的光固化压印材料接触的状态下，固化印记材料通过从第一构件的另一侧上方发射的光将图案转印到压印材料上。模板在其端部区域中设置有第二构件。与第一构件相比，第二构件相对于压印材料具有更大的接触角。

5. 发明授权

US07459705B2 Charged particle beam exposure method of character projection system, charged particle beam exposure device of character projection system, program for use in charged particle beam exposure device, and manufacturing method of semiconductor device 失效
标题翻译：字符投影系统的带电粒子束曝光方法，字符投影系统的带电粒子束曝光装置，带电粒子束曝光装置中的使用程序和半导体装置的制造方法
公开(公告)号：US07459705B2
公开(公告)日：2008-12-02
申请号：US11583114
申请日：2006-10-19
申请人： Tetsuro Nakasugi , Ryoichi Inanami , Takumi Ota , Takeshi Koshiba
发明人： Tetsuro Nakasugi , Ryoichi Inanami , Takumi Ota , Takeshi Koshiba
IPC分类号： G03F9/00 , G21K5/10 , H01J37/20
CPC分类号： G03F1/20 , B82Y10/00 , B82Y40/00 , H01J37/3174
摘要： A charged particle beam exposure method is disclosed, which includes preparing an aperture mask having character apertures, correcting dimensions of designed patterns in design data in consideration of at least one of factors such as a forward scattering distance of a charged particle, a rearward scattering distance of the charged particle, a blurring of a beam of the charged particle, a dimension conversion difference of the designed patterns due to a denseness/coarseness difference of the designed patterns caused when the underlayer is processed while using the resist as a mask, and the like, allocating at least a part of a specified character aperture of the plurality of character apertures of the aperture mask to the corrected designed patterns to produce writing data, and exposing the resist to the beams of the charged particle passed through the at least a part of the specified character aperture based on the writing data.
摘要翻译：公开了一种带电粒子束曝光方法，其包括制备具有字符孔的孔径掩模，考虑至少一个因素，校正设计数据中设计图案的尺寸，例如带电粒子的前向散射距离，向后散射距离带电粒子的模糊，带电粒子束的模糊，由于当使用抗蚀剂作为掩模时在底层被处理时引起的设计图案的致密度/粗糙度差造成的设计图案的尺寸转换差，以及类似地，将孔径掩模的多个字符孔径的指定字符孔径的至少一部分分配给经校正的设计图案以产生写入数据，并将抗蚀剂暴露于穿过至少一部分的带电粒子的束基于写入数据的指定字符孔径。

6. 发明授权

US07435978B2 System, method and a program for correcting conditions for controlling a charged particle beam for lithography and observation, and a program and method for manufacturing a semiconductor device 有权
标题翻译：用于校正用于光刻和观察的带电粒子束的控制条件的系统，方法和程序，以及用于制造半导体器件的程序和方法
公开(公告)号：US07435978B2
公开(公告)日：2008-10-14
申请号：US11239428
申请日：2005-09-30
申请人： Tetsuro Nakasugi , Takumi Ota
发明人： Tetsuro Nakasugi , Takumi Ota
IPC分类号： H01J37/153
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/31793
摘要： A system for correcting a charged particle beam lithography condition including: an error calculation unit configured to calculate an error in an illumination position of a charged particle beam, the charged particle beam is controlled by a lithography condition corrected by initial correction parameters; a temporary correction unit configured to calculate temporary correction parameters to decrease the error to a minimum; and a main correction unit configured to calculate main correction parameters correcting the lithography condition, by executing statistical processing using the temporary correction parameters and the initial correction parameters.
摘要翻译：一种用于校正带电粒子束光刻条件的系统，包括：误差计算单元，被配置为计算带电粒子束的照明位置的误差，带电粒子束由通过初始校正参数校正的光刻条件控制; 临时校正单元，被配置为计算临时校正参数以将所述误差减小到最小; 以及主校正单元，被配置为通过使用临时校正参数和初始校正参数执行统计处理来计算校正光刻条件的主要校正参数。

7. 发明申请

US20070114463A1 Charged particle beam exposure method of character projection system, charged particle beam exposure device of character projection system, program for use in charged particle beam exposure device, and manufacturing method of semiconductor device 失效
标题翻译：字符投影系统的带电粒子束曝光方法，字符投影系统的带电粒子束曝光装置，带电粒子束曝光装置中的使用程序和半导体装置的制造方法
公开(公告)号：US20070114463A1
公开(公告)日：2007-05-24
申请号：US11583114
申请日：2006-10-19
申请人： Tetsuro Nakasugi , Ryoichi Inanami , Takumi Ota , Takeshi Koshiba
发明人： Tetsuro Nakasugi , Ryoichi Inanami , Takumi Ota , Takeshi Koshiba
IPC分类号： G21K5/10
CPC分类号： G03F1/20 , B82Y10/00 , B82Y40/00 , H01J37/3174
摘要： A charged particle beam exposure method is disclosed, which includes preparing an aperture mask having character apertures, correcting dimensions of designed patterns in design data in consideration of at least one of factors such as a forward scattering distance of a charged particle, a rearward scattering distance of the charged particle, a blurring of a beam of the charged particle, a dimension conversion difference of the designed patterns due to a denseness/coarseness difference of the designed patterns caused when the underlayer is processed while using the resist as a mask, and the like, allocating at least a part of a specified character aperture of the plurality of character apertures of the aperture mask to the corrected designed patterns to produce writing data, and exposing the resist to the beams of the charged particle passed through the at least a part of the specified character aperture based on the writing data.
摘要翻译：公开了一种带电粒子束曝光方法，其包括制备具有字符孔的孔径掩模，考虑至少一个因素，校正设计数据中设计图案的尺寸，例如带电粒子的前向散射距离，向后散射距离带电粒子的模糊，带电粒子束的模糊，由于当使用抗蚀剂作为掩模时在底层被处理时引起的设计图案的致密度/粗糙度差造成的设计图案的尺寸转换差，以及类似地，将孔径掩模的多个字符孔径的指定字符孔径的至少一部分分配给经校正的设计图案以产生写入数据，并将抗蚀剂暴露于穿过至少一部分的带电粒子的束基于写入数据的指定字符孔径。

8. 发明授权

US08906281B2 Imprint method, imprinting equipment, and method for manufacturing semiconductor device 有权
标题翻译：压印方法，压印设备以及制造半导体器件的方法
公开(公告)号：US08906281B2
公开(公告)日：2014-12-09
申请号：US13402244
申请日：2012-02-22
申请人： Masayuki Hatano , Takumi Ota , Yohko Furutono
发明人： Masayuki Hatano , Takumi Ota , Yohko Furutono
IPC分类号： B29C59/02 , G03F7/00
CPC分类号： G03F7/002 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： In an imprint method according to one embodiment, a template on which a template pattern is formed is pushed against resist on a substrate to be transferred while the resist is cured in this state. The template is subsequently separated from the cured resist. The template is then degassed from the template pattern surface side between after the template is separated from the cured resist and till the template is pushed against resist at the next shot.
摘要翻译：在根据一个实施例的压印方法中，在该状态下，在抗蚀剂固化的同时，将其上形成有模板图案的模板压在要转印的基板上的抗蚀剂上。随后将模板与固化的抗蚀剂分离。然后在模板与固化的抗蚀剂分离之后，直到模板在下一次照射下被抵抗抗蚀剂时，模板从模板图案表面侧脱气。

9. 发明授权

US08368018B2 Method and apparatus for charged particle beam inspection 有权
标题翻译：带电粒子束检查的方法和装置
公开(公告)号：US08368018B2
公开(公告)日：2013-02-05
申请号：US12506475
申请日：2009-07-21
申请人： Masahiro Hatakeyama , Takumi Ota
发明人： Masahiro Hatakeyama , Takumi Ota
IPC分类号： G01N23/00
CPC分类号： H01J37/26 , G03F1/86 , H01J2237/0047 , H01J2237/2817 , H01L21/67213 , H01L22/12
摘要： A charged particle beam inspection apparatus comprises: an electron gun for irradiating an electron beam onto a sample; a detector for detecting a signal obtained from the sample; an image processor for forming an image from the signal obtained from the detector, and an energy controller for controlling the beam energy of the electron beam to be irradiated onto the sample. An identical charged particle beam inspection apparatus carries out a plurality of types of inspections. An inspection apparatus of a projection type may be applied thereto. A pattern defect inspection, a foreign material inspection, and an inspection for a defect in a multilayer are carried out. Beam energies E1, E2, and E3 in those inspections have a relation E1>E2 and E3>E2. Charge removal is performed in a transport chamber or other vacuum chamber before an inspection.
摘要翻译：带电粒子束检查装置包括：用于将电子束照射到样品上的电子枪; 用于检测从样品获得的信号的检测器; 用于根据从检测器获得的信号形成图像的图像处理器，以及用于控制待照射到样品上的电子束的束能量的能量控制器。相同的带电粒子束检查装置执行多种类型的检查。可以对投影型的检查装置施加。进行图案缺陷检查，异物检查和多层的缺陷检查。这些检查中的能量E1，E2和E3具有E1> E2和E3> E2的关系。在检查之前，在运输室或其他真空室中进行除电。

10. 发明申请

US20120244719A1 IMPRINT METHOD, IMPRINTING EQUIPMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：印刷方法，印刷设备和制造半导体器件的方法
公开(公告)号：US20120244719A1
公开(公告)日：2012-09-27
申请号：US13402244
申请日：2012-02-22
申请人： Masayuki HATANO , Takumi OTA , Yohko FURUTONO
发明人： Masayuki HATANO , Takumi OTA , Yohko FURUTONO
IPC分类号： H01L21/304 , B29C59/02 , B29C47/76
CPC分类号： G03F7/002 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： In an imprint method according to one embodiment, a template on which a template pattern is formed is pushed against resist on a substrate to be transferred while the resist is cured in this state. The template is subsequently separated from the cured resist. The template is then degassed from the template pattern surface side between after the template is separated from the cured resist and till the template is pushed against resist at the next shot.
摘要翻译：在根据一个实施例的压印方法中，在该状态下，在抗蚀剂固化的同时，将其上形成有模板图案的模板压在要转印的基板上的抗蚀剂上。随后将模板与固化的抗蚀剂分离。然后在模板与固化的抗蚀剂分离之后，直到模板在下一次照射下被抵抗抗蚀剂时，模板从模板图案表面侧脱气。

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