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1. 发明申请

US20130320841A1 ORGANIC ELECTROLUMINESCENCE ELEMENT 失效
标题翻译：有机电致发光元件
公开(公告)号：US20130320841A1
公开(公告)日：2013-12-05
申请号：US14000531
申请日：2012-02-10
申请人： Takeo Shirai , Yoshiharu Nakamura , Hitomichi Takano
发明人： Takeo Shirai , Yoshiharu Nakamura , Hitomichi Takano
IPC分类号： H05B33/06
CPC分类号： H05B33/06 , H01L51/5212 , H01L2251/5361 , H05B33/10 , H05B33/26
摘要： The organic electroluminescent device includes: a first electrode of conductive and light transmissive material; a light emitting layer of organic material on the first electrode; a second electrode of conductive material on the layer; first and second terminal parts placed on first and second ends of the layer in a first direction crossing a thickness direction of the layer and coupled to the first and second electrodes, respectively; and an auxiliary electrode which is on the first electrode and beside the layer in a second direction crossing the thickness direction and the first direction and coupled to the first electrode, and has an elongated shape extending in the first direction, and made of material having specific resistance smaller than the first electrode, and includes portions with different thicknesses such that sheet resistance is increased with an increase in distance from the first terminal part in a lengthwise direction thereof.
摘要翻译：有机电致发光器件包括：导电和透光材料的第一电极; 在所述第一电极上的有机材料的发光层; 该层上的导电材料的第二电极; 第一和第二端子部分沿着与层的厚度方向交叉的第一方向分别放置在层的第一和第二端上并分别耦合到第一和第二电极; 以及辅助电极，其在所述第一电极上并且在所述层的旁边沿与所述厚度方向和所述第一方向交叉的第二方向并且耦合到所述第一电极，并且具有沿所述第一方向延伸的细长形状，并且由具有特定电阻小于第一电极，并且包括具有不同厚度的部分，使得薄层电阻随着其长度方向与第一端子部分的距离的增加而增加。

2. 发明授权

US08710735B2 Organic electroluminescence element 失效
标题翻译：有机电致发光元件
公开(公告)号：US08710735B2
公开(公告)日：2014-04-29
申请号：US14000531
申请日：2012-02-10
申请人： Takeo Shirai , Yoshiharu Nakamura , Hitomichi Takano
发明人： Takeo Shirai , Yoshiharu Nakamura , Hitomichi Takano
IPC分类号： H01L23/48
CPC分类号： H05B33/06 , H01L51/5212 , H01L2251/5361 , H05B33/10 , H05B33/26
摘要： The organic electroluminescent device includes: a first electrode of conductive and light transmissive material; a light emitting layer of organic material on the first electrode; a second electrode of conductive material on the layer; first and second terminal parts placed on first and second ends of the layer in a first direction crossing a thickness direction of the layer and coupled to the first and second electrodes, respectively; and an auxiliary electrode which is on the first electrode and beside the layer in a second direction crossing the thickness direction and the first direction and coupled to the first electrode, and has an elongated shape extending in the first direction, and made of material having specific resistance smaller than the first electrode, and includes portions with different thicknesses such that sheet resistance is increased with an increase in distance from the first terminal part in a lengthwise direction thereof.
摘要翻译：有机电致发光器件包括：导电和透光材料的第一电极; 在所述第一电极上的有机材料的发光层; 该层上的导电材料的第二电极; 第一和第二端子部分沿着与层的厚度方向交叉的第一方向分别放置在层的第一和第二端上并且分别耦合到第一和第二电极; 以及辅助电极，其在所述第一电极上并且在所述层的旁边沿与所述厚度方向和所述第一方向交叉的第二方向并且耦合到所述第一电极，并且具有沿所述第一方向延伸的细长形状，并且由具有特定电阻小于第一电极，并且包括具有不同厚度的部分，使得薄层电阻随着其长度方向与第一端子部分的距离的增加而增加。

3. 发明授权

US06580126B1 Solid-state relay 失效
公开(公告)号：US06580126B1
公开(公告)日：2003-06-17
申请号：US09709582
申请日：2000-11-13
申请人： Masahiko Suzumura , Hitomichi Takano , Yuji Suzuki , Takashi Kishida , Yoshiki Hayasaki , Yoshifumi Shirai , Takeshi Yoshida , Yasunori Miyamoto
发明人： Masahiko Suzumura , Hitomichi Takano , Yuji Suzuki , Takashi Kishida , Yoshiki Hayasaki , Yoshifumi Shirai , Takeshi Yoshida , Yasunori Miyamoto
IPC分类号： H01L2976
CPC分类号： H01L29/7824 , H01L23/49562 , H01L23/49575 , H01L24/06 , H01L24/48 , H01L24/49 , H01L27/088 , H01L27/1203 , H01L29/0649 , H01L29/0653 , H01L29/0696 , H01L2224/05553 , H01L2224/05554 , H01L2224/05624 , H01L2224/32245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48237 , H01L2224/48257 , H01L2224/49 , H01L2224/73265 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/12036 , H01L2924/12041 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/19043 , H01L2924/30105 , H01L2924/00 , H01L2224/45099
摘要： A solid state relay composed of a series connected pair of LDMOSFETs has a minimized output capacitance. Each LDMOSFET is configured to have a silicon layer of a first conductive type, a drain region of the first conductive type diffused in the top surface of the silicon layer, a well region of a second conductive type diffused in the silicon layer in a laterally spaced relation from the drain region, and a source region of the first conductive type diffused within the well region to define a channel extending between the source region and a confronting edge of the well region along the top surface of the silicon layer. Each LDMOSFET is of an SOI (Silicon-On-Insulator) structure composed of a silicon substrate placed on a supporting plate, a buried oxide layer on the silicon substrate, and the silicon layer on the buried oxide layer. The well region is diffused over the full depth of the silicon layer to have its bottom in contact with the buried oxide layer, so that the well region forms with the silicon layer a P-N interface only at a small area adjacent the channel. Because of this reduced P-N interface and also because of the buried oxide layer exhibiting a much lower inductive capacitance than the silicon layer, it is possible to greatly reduce a drain-source capacitance for minimizing the output capacitance of the relay in the non-conductive condition.

4. 发明授权

US07973924B2 Target substance sensor and method thereof using a photonic crystal 有权
标题翻译：靶物质传感器及其使用光子晶体的方法
公开(公告)号：US07973924B2
公开(公告)日：2011-07-05
申请号：US10593646
申请日：2005-03-23
申请人： Susumu Noda , Takashi Asano , Hitomichi Takano
发明人： Susumu Noda , Takashi Asano , Hitomichi Takano
IPC分类号： G01J3/00
CPC分类号： G02B6/1225 , B82Y20/00 , G01N21/3504 , G01N21/774 , G01N21/7746 , G01N2021/7776
摘要： A highly sensitive and compactable target substance sensor for detection of the target substance using a photonic crystal and a method thereof. The sensor includes an electromagnetic wave source of supplying an electromagnetic wave, a photonic sensor element, and a detector. The photonic sensor element has photonic crystalline structure and is configured to include a sensor waveguide for introducing the electromagnetic wave, and a sensing resonator electromagnetically coupled to the sensor waveguide for resonating the electromagnetic wave at specific wavelength. The sensing resonator is exposed to an atmosphere including the target substance so as to vary a characteristic of the electromagnetic wave emitted from the sensing resonator. The detector is configured to receive the electromagnetic wave emitted from the sensing resonator to recognize an intensity variation of the electromagnetic wave and issue a signal indicative of a characteristic of the target substance.
摘要翻译：一种用于使用光子晶体检测目标物质的高灵敏度和可压实的目标物质传感器及其方法。传感器包括提供电磁波的电磁波源，光子传感器元件和检测器。光子传感器元件具有光子晶体结构，并且被配置为包括用于引入电磁波的传感器波导和电磁耦合到传感器波导的感测谐振器，以谐振特定波长的电磁波。感测谐振器暴露于包括目标物质的气氛，以便改变从感测谐振器发射的电磁波的特性。检测器被配置为接收从感测谐振器发射的电磁波，以识别电磁波的强度变化并发出指示目标物质的特性的信号。

5. 发明申请

US20080252890A1 Target Substance Sensor and Method Thereof Using a Photonic Crystal 有权
标题翻译：目标物质传感器及其使用光子晶体的方法
公开(公告)号：US20080252890A1
公开(公告)日：2008-10-16
申请号：US10593646
申请日：2005-03-23
申请人： Susumu Noda , Takashi Asano , Hitomichi Takano
发明人： Susumu Noda , Takashi Asano , Hitomichi Takano
IPC分类号： G01N21/00
CPC分类号： G02B6/1225 , B82Y20/00 , G01N21/3504 , G01N21/774 , G01N21/7746 , G01N2021/7776
摘要： A highly sensitive and compactible target substance sensor for detection of the target substance using a photonic crystal and a method thereof are provided.The sensor of the present invention includes an electromagnetic wave source of supplying an electromagnetic wave, a photonic sensor element, and a detector. The photonic sensor element has photonic crystalline structure and is configured to include a sensor waveguide for introducing the electromagnetic wave, and a sensing resonator electromagnetically coupled to the sensor waveguide for resonating the electromagnetic wave at specific wavelength. The sensing resonator is exposed to an atmosphere including the target substance so as to vary a characteristic of the electromagnetic wave emitted from the sensing resonator. The detector is configured to receive the electromagnetic wave emitted from the sensing resonator to recognize an intensity variation of the electromagnetic wave and issue a signal indicative of a characteristic of the target substance.
摘要翻译：提供了一种用于使用光子晶体检测目标物质的高灵敏度和可压缩的目标物质传感器及其方法。本发明的传感器包括提供电磁波的电磁波源，光子传感器元件和检测器。光子传感器元件具有光子晶体结构，并且被配置为包括用于引入电磁波的传感器波导和电磁耦合到传感器波导的感测谐振器，以谐振特定波长的电磁波。感测谐振器暴露于包括目标物质的气氛，以便改变从感测谐振器发射的电磁波的特性。检测器被配置为接收从感测谐振器发射的电磁波，以识别电磁波的强度变化并发出指示目标物质的特性的信号。

6. 发明授权

US5780900A Thin film silicon-on-insulator transistor having an improved power dissipation, a high break down voltage, and a low on resistance 失效
标题翻译：具有改善的功率耗散，高分解电压和低导通电阻的薄膜绝缘体上硅晶体管
公开(公告)号：US5780900A
公开(公告)日：1998-07-14
申请号：US733164
申请日：1996-10-17
申请人： Yuji Suzuki , Hitomichi Takano , Masahiko Suzumura , Yoshiki Hayasaki , Takashi Kishida , Yoshifumi Shirai
发明人： Yuji Suzuki , Hitomichi Takano , Masahiko Suzumura , Yoshiki Hayasaki , Takashi Kishida , Yoshifumi Shirai
IPC分类号： H01L29/06 , H01L29/08 , H01L29/78 , H01L29/786 , H01L29/10
CPC分类号： H01L29/7824 , H01L29/0873 , H01L29/78624 , H01L29/0657 , H01L29/0878 , H01L29/402
摘要： A thin film transistor of SOI (Silicon-On-Insulator) type includes a buried oxide layer formed on a semiconductor substrate, a silicon layer of a first conductive type formed on the buried oxide layer, and an upper oxide layer formed on the silicon layer. The silicon layer has a body region of a second conductive type, source region of the first conductive type, drain region of the first conductive type, and a drift region of the first conductive type. The silicon layer is formed with a first portion of a thickness T1 in which the doping region is formed, and a second portion of a thickness T2 in which the body region is formed to reach the buried oxide layer. When the thicknesses T1 and T2 are determined so as to satisfy the relationships: 0.4 .mu.m
摘要翻译： SOI（绝缘体上硅）型薄膜晶体管包括在半导体衬底上形成的掩埋氧化物层，形成在掩埋氧化物层上的第一导电类型的硅层和形成在硅层上的上部氧化物层。硅层具有第二导电类型的主体区域，第一导电类型的源极区域，第一导电类型的漏极区域和第一导电类型的漂移区域。硅层形成有其中形成有掺杂区域的厚度T1的第一部分和形成有体区以到达掩埋氧化物层的厚度T2的第二部分。当厚度T1和T2被确定为满足以下关系：0.4μm

7. 发明申请

US20060269188A1 Electromagnetic wave frequency filter 失效
公开(公告)号：US20060269188A1
公开(公告)日：2006-11-30
申请号：US10569922
申请日：2004-08-26
申请人： Susumu Noda , Takashi Asano , Bong-Shik Song , Hitomichi Takano
发明人： Susumu Noda , Takashi Asano , Bong-Shik Song , Hitomichi Takano
IPC分类号： G02B6/26
CPC分类号： G02B6/12007 , B82Y20/00 , G02B6/1225 , G02B2006/12164 , H01P1/2005
摘要： In this electromagnetic wave frequency filter, an electromagnetic wave of a predetermined frequency matching a resonant frequency of a resonator 41 is transmitted from an input waveguide 2 to an output waveguide 3 through the resonator 41, and is outputted from a drop port P31. This filter has an input-waveguide-side reflector 211 and an output-waveguide-side reflector 311, which reflect the electromagnetic wave of the predetermined frequency. The electromagnetic wave frequency filter satisfies the following relation: Qinb/(1−cos θ1)

8. 发明授权

US06448620B2 Semiconductor device and process for producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06448620B2
公开(公告)日：2002-09-10
申请号：US09741812
申请日：2000-12-22
申请人： Yoshiki Hayasaki , Hitomichi Takano , Masahiko Suzumura , Yuji Suzuki , Yoshifumi Shirai , Takashi Kishida , Takeshi Yoshida , Takaaki Yoshihara
发明人： Yoshiki Hayasaki , Hitomichi Takano , Masahiko Suzumura , Yuji Suzuki , Yoshifumi Shirai , Takashi Kishida , Takeshi Yoshida , Takaaki Yoshihara
IPC分类号： H01L2701
CPC分类号： H01L29/7824 , H01L29/0878 , H01L29/66681 , H01L29/78624
摘要： To provide a semiconductor device having a large allowable current, a demanded withstand voltage, and small output capacitance and resistance, the semiconductor device comprises a semiconductor layer formed on a semiconductor substrate, and the semiconductor layer includes a first conductivity type-drain region, a second conductivity type-well region apart from the drain region, a first conductivity type-source region in the well region apart from one end of the well region on the side of the drain region, a first conductivity type-drift region formed between one end of the well region and the drain region and in contact with the well region and the drain region, respectively, and a gate electrode formed spaced a gate oxide layer and on the well region located between the drift region and the source region; and the impurity concentration of the drift region decreases in the lateral direction and also in the vertical direction, respectively, as the distance from the drain region increases.
摘要翻译：为了提供具有大容许电流，所要求的耐受电压和小的输出电容和电阻的半导体器件，半导体器件包括形成在半导体衬底上的半导体层，并且半导体层包括第一导电类型 - 漏极区域，与漏极区分离的第二导电类型 - 阱区，在与漏极区一侧的阱区的一端分开的阱区中的第一导电型 - 源极区，形成在漏极区的一端和与阱区和漏极区分别接触的阱区和形成在栅极氧化物层之间以及位于漂移区和源极区之间的阱区上的栅极; 随着距离漏极区域的距离增加，漂移区域的杂质浓度分别在横向和垂直方向上减小。

9. 发明授权

US07321707B2 Electromagnetic wave frequency filter 失效
公开(公告)号：US07321707B2
公开(公告)日：2008-01-22
申请号：US10569922
申请日：2004-08-26
申请人： Susumu Noda , Takashi Asano , Bong-Shik Song , Hitomichi Takano
发明人： Susumu Noda , Takashi Asano , Bong-Shik Song , Hitomichi Takano
IPC分类号： G02B6/26
CPC分类号： G02B6/12007 , B82Y20/00 , G02B6/1225 , G02B2006/12164 , H01P1/2005
摘要： In this electromagnetic wave frequency filter, an electromagnetic wave of a predetermined frequency matching a resonant frequency of a resonator 41 is transmitted from an input waveguide 2 to an output waveguide 3 through the resonator 41, and is outputted from a drop port P31. This filter has an input-waveguide-side reflector 211 and an output-waveguide-side reflector 311, which reflect the electromagnetic wave of the predetermined frequency. The electromagnetic wave frequency filter satisfies the following relation: Qinb/(1−cos θ1)

10. 发明授权

US07184638B2 Electromagnetic wave frequency filter 有权
标题翻译：电磁波频率滤波器
公开(公告)号：US07184638B2
公开(公告)日：2007-02-27
申请号：US10540776
申请日：2003-12-24
申请人： Susumu Noda , Takashi Asano , Hitomichi Takano
发明人： Susumu Noda , Takashi Asano , Hitomichi Takano
IPC分类号： G02F1/295 , G02B6/42 , G02B6/10
CPC分类号： B82Y20/00 , G02B6/12007 , G02B6/1225
摘要： The present invention aims to provide an electromagnetic wave frequency filter capable of transmitting an electromagnetic wave having a predetermined frequency between two waveguides with a high level of efficiency. This object is achieved by the following construction: A resonator 15 that resonates with the electromagnetic wave having the predetermined frequency is located between an input waveguide 13 and an output waveguide 14 and close to the two waveguides. The output waveguide 14 is designed so that it extends parallel to the input waveguide 13 within a predetermined section 18 located in proximity to the resonator 15, and its distance from the input waveguide 13 in the other section is larger than that in the predetermined section 18. This construction allows the electromagnetic wave having the predetermined frequency to be transmitted between the input waveguide 13 and the output waveguide 14 via the resonator 15, while preventing the other electromagnetic waves having different frequencies from being transmitted between the input waveguide 13 and the output waveguide 14 outside of the predetermined section 18. The present electromagnetic wave frequency filter can be preferably constructed using a two-dimensional photonic crystal.
摘要翻译：本发明旨在提供一种电磁波频率滤波器，其能够以高效率的方式在两个波导之间传输具有预定频率的电磁波。该目的通过以下结构实现：与具有预定频率的电磁波谐振的谐振器15位于输入波导13和输出波导14之间并且靠近两个波导。输出波导14被设计成使得其在位于谐振器15附近的预定部分18内平行于输入波导13延伸，并且其与另一部分中的输入波导13的距离大于预定部分18中的距离。这种结构允许具有预定频率的电磁波经由谐振器15在输入波导13和输出波导14之间传输，同时防止具有不同频率的其它电磁波在输入波导13和输出波导14之间传输在预定部分18之外。本电磁波频率滤波器可以优选使用二维光子晶体构造。

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