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1. 发明授权

US5086409A Recording and/or reproducing method of Bloch line memory 失效
标题翻译：笔记忆记录和/或再现方法
公开(公告)号：US5086409A
公开(公告)日：1992-02-04
申请号：US660260
申请日：1991-02-26
申请人： Hitoshi Oda , Takeo Ono , Kou Yoneda , Toyoshige Sasaki , Mamoru Miyawaki
发明人： Hitoshi Oda , Takeo Ono , Kou Yoneda , Toyoshige Sasaki , Mamoru Miyawaki
IPC分类号： G11C19/08
CPC分类号： G11C13/06 , G11C19/0858 , G11C19/0866 , G11C19/0875 , G11C13/04
摘要： There is disclosed a method of recording and/or reproducing in/from a Bloch line memory, including the step of: radiating or guiding a light beam to a vicinity of a distal end of a magnetic domain capabable of forming a Bloch line therein or on an extending line thereof.
摘要翻译：公开了一种在Bloch行存储器中记录和/或再现方法，包括以下步骤：将光束照射或引导到可在其中形成Bloch线的磁畴的远端附近，或者在其延伸线。

2. 发明授权

US5172336A Method of transferring Bloch lines 失效
标题翻译：转移布洛赫线的方法
公开(公告)号：US5172336A
公开(公告)日：1992-12-15
申请号：US734098
申请日：1991-07-23
申请人： Fumihiko Saito , Takeo Ono , Hitoshi Oda , Akira Shinmi
发明人： Fumihiko Saito , Takeo Ono , Hitoshi Oda , Akira Shinmi
IPC分类号： G11C19/08
CPC分类号： G11C19/0816 , G11C19/0858
摘要： A transfer method for transferring Bloch lines present in the magnetic wall of a magnetic section formed in a magnetic thin film along the magnetic wall includes the steps of distributing a predetermined soft magnetic material layer pattern on the magnetic thin film, applying a magnetic field to the soft magnetic material layer pattern parallel to the film surface of the magnetic thin film to form a potential well in the magnetic thin film, positioning the Bloch lines in the potential well, and varying the direction of the magnetization of the soft magnetic material layer pattern in a plane parallel to the film surface to move the potential well along the magnetic wall and transfer the Bloch lines.
摘要翻译：在磁性薄膜上形成的形成在磁性薄膜上的磁性部分的磁性壁中存在的Bloch线的传送方法包括以下步骤：在磁性薄膜上分配预定的软磁性材料层图案，向磁性薄膜施加磁场软磁材料层图案平行于磁性薄膜的薄膜表面，以在磁性薄膜中形成势阱，将布洛赫线定位在势阱中，并改变软磁材料层图案的磁化方向平行于膜表面的平面沿着磁壁移动势阱并转移布洛赫线。

3. 发明授权

US5065378A System for reproducing a signal recorded in a magnetic recording medium by using a magnetostatic wave 失效
标题翻译：通过使用磁波波形再现记录在磁记录介质中的信号的系统
公开(公告)号：US5065378A
公开(公告)日：1991-11-12
申请号：US604992
申请日：1990-10-29
申请人： Hitoshi Oda , Takeo Ono , Toyoshige Sasaki , Kou Yoneda , Mamoru Miyawaki
发明人： Hitoshi Oda , Takeo Ono , Toyoshige Sasaki , Kou Yoneda , Mamoru Miyawaki
IPC分类号： G11B5/127 , G11B5/49 , G11B11/10 , G11B11/105 , G11B11/115
CPC分类号： G11B11/10 , G11B11/10547 , G11B11/115 , G11B5/1278 , G11B5/4946
摘要： A magnetic record reproducing method includes the steps of bringing a magnetic film, capable of producing a magneto static wave, into intimate contact with or proximity to the recording surface of a magnetic recording medium, causing the magnetic film to produce the magnetostatic wave, detecting any variation in wave number in the magnetostatic wave attributable to the magnetized signal of the recording surface, and converting the variation in wave number in the magnetostatic wave into an electrical signal.
摘要翻译：磁记录再现方法包括以下步骤：使能够产生磁静电波的磁膜与磁记录介质的记录表面紧密接触或接近磁带，使磁膜产生静磁波，检测任何归因于记录表面的磁化信号的静磁波中的波数的变化，以及将静磁波中的波数的变化转换为电信号。

4. 发明授权

US4974201A Process for transferring bloch lines formed in a magnetic wall of a magnetic domain, and a magnetic memory apparatus for recording and reproduction of information by transferring bloch lines in utilizing said transferring process 失效
标题翻译：用于转印形成在磁畴的磁壁中的卷曲线的方法，以及用于通过在利用所述转印过程中转印卷曲线来记录和再现信息的磁存储装置
公开(公告)号：US4974201A
公开(公告)日：1990-11-27
申请号：US72668
申请日：1987-07-13
申请人： Takeo Ono , Hitoshi Oda
发明人： Takeo Ono , Hitoshi Oda
IPC分类号： G11C19/08
CPC分类号： G11C19/0841
摘要： A process for transferring Bloch lines formed in a magnetic wall of a magnetic domain and a magnetic memory apparatus for recording/reproducing information in utilizing Bloch lines formed in the magnetic wall of the magnetic domain as a information carrier are disclosed. The process comprises steps of forming a positive or negative magnetic charge area in the magnetic wall, thereby attaching a Bloch line to the area, and moving the magnetic charge area, thereby moving the Bloch line. The apparatus comprises a memory substrate having a stripe-shaped magnetic domain, a way to write Bloch lines in the magnetic wall of the stripe-shaped magnetic domain according to input information, a way to read the Bloch lines so stored to reproduce the information in the form of electric signals and a way to apply a rotating magnetic field parallel to the plane of the memory substrate, to the stripe-shaped magnetic domain, to move the Bloch lines along the magnetic wall. As a result, the Bloch lines so written are transferred in succession to another location in the domain or to a read-out area.
摘要翻译：公开了一种用于传输形成在磁畴的磁壁中的Bloch线和用于在形成在磁畴的磁壁中的Bloch线作为信息载体来记录/再现信息的磁存储装置的处理。该方法包括在磁壁中形成正或负磁荷区域的步骤，从而将Bloch线连接到该区域，并移动磁荷区域，从而移动Bloch线。该装置包括具有条形磁畴的存储器衬底，根据输入信息将Bloch线写入条形磁畴的磁壁中的方式，读取如此存储的Bloch线以便再现信息的方式电信号的形式和将平行于存储器基板的平面的旋转磁场施加到条形磁畴的方式，以沿着磁壁移动布洛赫线。因此，如此写入的Bloch行连续转移到域中的另一个位置或读取区域。

5. 发明授权

US5179532A Transfering bloch lines using perpendicular and in-plane pulse magnetic fields 失效
标题翻译：使用垂直和平面内的脉冲磁场传输布线
公开(公告)号：US5179532A
公开(公告)日：1993-01-12
申请号：US811912
申请日：1991-12-23
申请人： Takeo Ono , Fumihiko Saito , Hitoshi Oda , Kou Yoneda , Akira Shinmi , Tetsuya Kaneko , Nobuo Watanabe
发明人： Takeo Ono , Fumihiko Saito , Hitoshi Oda , Kou Yoneda , Akira Shinmi , Tetsuya Kaneko , Nobuo Watanabe
IPC分类号： G11C19/08
CPC分类号： G11C19/0816 , G11C19/0825
摘要： A Bloch line transferring method or system comprises a step of transferring only a first Bloch line of the Bloch line pair in the magnetic wall in a predetermined direction, and a step of transferring a second Bloch line of the Bloch line pair in the predetermined direction to form the Bloch line pair. It typically comprises applying a magnetic field perpendicular to a film plane of a magnetic thin film having the magnetic wall, to the magnetic thin film, and applying a magnetic field parallel to the film plane of the magnetic film, to the magnetic thin film along the magnetic wall.
摘要翻译：布洛赫线转移方法或系统包括在预定方向上仅将Bloch线对的第一布洛赫线传输到磁壁中的步骤，以及将布洛赫线对的第二布洛赫线沿预定方向转移到形成布洛赫线对。其通常包括将垂直于具有磁性壁的磁性薄膜的膜平面的磁场施加到磁性薄膜，并且将平行于磁性膜的膜平面的磁场施加到沿着磁性膜的磁性薄膜的磁性薄膜磁墙。

6. 发明授权

US5119328A Solid state memory device 失效
标题翻译：固态存储器件
公开(公告)号：US5119328A
公开(公告)日：1992-06-02
申请号：US434538
申请日：1989-11-08
申请人： Kazuya Matsumoto , Masaaki Matsushima , Takeo Ono , Hitoshi Oda
发明人： Kazuya Matsumoto , Masaaki Matsushima , Takeo Ono , Hitoshi Oda
IPC分类号： G11C11/14 , G11C13/06 , G11C19/08
CPC分类号： G11C19/0866 , G11C19/0858
摘要： A solid state memory device has a thin film for bubble memory, a laser light source, and optical means using a laser light emitted from the laser light source to cause information to be stored in the form of bubbles on the thin film for bubble memory and reproduce the stored information.
摘要翻译：固体存储装置具有用于气泡存储器的薄膜，激光光源和使用从激光光源发射的激光的光学装置，以使信息以气泡形式存储在用于气泡存储器的薄膜上，再现存储的信息。

7. 发明授权

US5105383A Method for detecting the presence of Bloch lines in a magnetic wall 失效
标题翻译：用于检测磁性壁中的线路的存在的方法
公开(公告)号：US5105383A
公开(公告)日：1992-04-14
申请号：US602372
申请日：1990-10-25
申请人： Fumihiko Saito , Takeo Ono , Hitoshi Oda , Kou Yoneda , Akira Shinmi , Tetsuya Kaneko , Nobuo Watanabe
发明人： Fumihiko Saito , Takeo Ono , Hitoshi Oda , Kou Yoneda , Akira Shinmi , Tetsuya Kaneko , Nobuo Watanabe
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0866
摘要： In a method or device for detecting the presence and/or absence of a Bloch line in a magnetic wall of a magnetic domain formed in a thin magnetic film, a magnetic field parallel to the plane of the thin magnetic film is applied to the magnetic domain to cause a variation in the magnetic domain, the state of variation of the magnetic domain is detected and the presence and/or absence of a Bloch line in a predetermined position of the magnetic wall is detected according to the result of the detection of the state of variation set forth above.
摘要翻译：在用于检测在薄磁膜中形成的磁畴的磁壁中存在和/或不存在Bloch线的方法或装置中，将平行于薄磁膜的平面的磁场施加到磁畴为了引起磁畴的变化，检测到磁畴的变化状态，并且根据状态检测的结果来检测磁壁的预定位置中是否存在Bloch线的变化。

8. 发明授权

US5072421A Magnetic memory and recording-reproducing method for the magnetic memory 失效
标题翻译：用于磁存储器的磁存储器和记录再现方法
公开(公告)号：US5072421A
公开(公告)日：1991-12-10
申请号：US593252
申请日：1990-10-01
申请人： Takeo Ono , Kou Yoneda , Hitoshi Oda , Mamoru Miyawaki , Toyoshige Sasaki
发明人： Takeo Ono , Kou Yoneda , Hitoshi Oda , Mamoru Miyawaki , Toyoshige Sasaki
IPC分类号： G11C19/08
CPC分类号： G11C19/0858 , G11C19/0866 , G11C19/0883
摘要： A magnetic memory has a substrate, a magnetic film provided on the substrate including a recording medium capable of producing a recording carrier, and a light waveguide layer on the magnetic film or on that surface of the substrate which is opposite to a surface on which the magnetic film is present. Recording and reproduction of information are effected relative to the magnetic film by a light propagated through the light waveguide layer.
摘要翻译：磁性存储器具有基板，设置在基板上的磁性膜，该磁性膜包括能够制造记录载体的记录介质，以及位于该磁性膜上或与该基板的该表面相对的表面上的光波导层，存在磁性膜。通过通过光波导层传播的光，相对于磁性膜实现信息的记录和再生。

9. 发明授权

US5138571A Method for transferring a bloch line 失效
标题翻译：转移布线的方法
公开(公告)号：US5138571A
公开(公告)日：1992-08-11
申请号：US758209
申请日：1991-09-12
申请人： Takeo Ono , Hitoshi Oda , Fumihiko Saito , Akira Shinmi
发明人： Takeo Ono , Hitoshi Oda , Fumihiko Saito , Akira Shinmi
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C21/00 , G11C19/0808 , G11C19/0825
摘要： Method for transferring the Bloch line present in the magnetic wall of the magnetic domain formed in the magnetic thin film, along the magnetic wall is characterized by the steps of forming a predetermined stress distribution along the magnetic wall in the magnetic thin film, positioning the Bloch line to a predetermined position in the magnetic wall in accordance with the stress distribution, and applying a pulsive magnetic field normally to a film plane of the magnetic thin film in synchronism with the formation of the stress distribution. The Bloch line is transferred from the predetermined position to another position by the stress distribution formation step and the magnetic field application step.
摘要翻译：传送存在于形成在磁性薄膜中的磁畴的磁壁中的Bloch线沿着磁性壁的方法的特征在于：沿着磁性薄膜中的磁性壁形成预定的应力分布的步骤，将Bloch 根据应力分布在磁性壁中的预定位置上行，并且与形成应力分布同步地将脉冲磁场正常地施加到磁性薄膜的膜平面。布洛赫线通过应力分布形成步骤和磁场施加步骤从预定位置转移到另一位置。

10. 发明授权

US4974200A Method of transferring Bloch lines in the domain wall of a magnetic domain, and a magnetic memory using the method 失效
标题翻译：在磁畴的畴壁中转移Bloch线的方法和使用该方法的磁存储器
公开(公告)号：US4974200A
公开(公告)日：1990-11-27
申请号：US78845
申请日：1987-07-28
申请人： Takeo Ono , Hitoshi Oda , Hisaaki Kawade , Akira Shinmi , Tokihiko Ogura , Masao Sugata , Kuniji Osabe
发明人： Takeo Ono , Hitoshi Oda , Hisaaki Kawade , Akira Shinmi , Tokihiko Ogura , Masao Sugata , Kuniji Osabe
IPC分类号： G11C19/08
CPC分类号： G11C19/0825
摘要： A method of transferring Bloch lines present in a domain wall of a magnetic domain formed in a thin magnetic firm, includes cyclically forming asymmetrical potential wells along the domain wall in order to locate the Bloch lines at predetermined positions of the domain wall, and applying a pulsed magnetic film to shift the Bloch lines from a predetermined potential well to another potential well. In a magnetic memory for recording information using Bloch lines as an information carrier, a memory substrate has a stripe magnetic domain defined by a domain wall along which asymmetrical potential wells are cyclically formed to stabilize the Bloch lines along the domain wall. The Bloch lines are written in the domain wall in accordance with input information, the Bloch lines so formed are read out, and the read-out Bloch lines are converted into an electrical signal. A pulsed magnetic field is applied in a direction perpendicular to a surface of the memory substrate for shifting the Bloch lines between potential wells.
摘要翻译：存在于形成在薄磁性公司中的磁畴的畴壁中的Bloch线的方法包括沿畴壁循环形成不对称势阱，以便将Bloch线定位在畴壁的预定位置，并施加脉冲磁性膜将Bloch线从预定的势阱转移到另一个势阱。在用于使用Bloch线作为信息载体记录信息的磁存储器中，存储器基板具有由畴壁限定的条状磁畴，沿着该磁畴周期地形成不对称势阱以使沿着畴壁稳定布洛赫线。根据输入信息将Bloch线写入畴壁，读出如此形成的Bloch线，并将读出的Bloch线转换为电信号。在垂直于存储器基板的表面的方向施加脉冲磁场，用于移动势阱之间的Bloch线。

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