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    • 6. 发明授权
    • Method of transferring Bloch lines
    • 转移布洛赫线的方法
    • US5172336A
    • 1992-12-15
    • US734098
    • 1991-07-23
    • Fumihiko SaitoTakeo OnoHitoshi OdaAkira Shinmi
    • Fumihiko SaitoTakeo OnoHitoshi OdaAkira Shinmi
    • G11C19/08
    • G11C19/0816G11C19/0858
    • A transfer method for transferring Bloch lines present in the magnetic wall of a magnetic section formed in a magnetic thin film along the magnetic wall includes the steps of distributing a predetermined soft magnetic material layer pattern on the magnetic thin film, applying a magnetic field to the soft magnetic material layer pattern parallel to the film surface of the magnetic thin film to form a potential well in the magnetic thin film, positioning the Bloch lines in the potential well, and varying the direction of the magnetization of the soft magnetic material layer pattern in a plane parallel to the film surface to move the potential well along the magnetic wall and transfer the Bloch lines.
    • 在磁性薄膜上形成的形成在磁性薄膜上的磁性部分的磁性壁中存在的Bloch线的传送方法包括以下步骤:在磁性薄膜上分配预定的软磁性材料层图案,向磁性薄膜施加磁场 软磁材料层图案平行于磁性薄膜的薄膜表面,以在磁性薄膜中形成势阱,将布洛赫线定位在势阱中,并改变软磁材料层图案的磁化方向 平行于膜表面的平面沿着磁壁移动势阱并转移布洛赫线。
    • 7. 发明授权
    • Process for transferring bloch lines formed in a magnetic wall of a
magnetic domain, and a magnetic memory apparatus for recording and
reproduction of information by transferring bloch lines in utilizing
said transferring process
    • 用于转印形成在磁畴的磁壁中的卷曲线的方法,以及用于通过在利用所述转印过程中转印卷曲线来记录和再现信息的磁存储装置
    • US4974201A
    • 1990-11-27
    • US72668
    • 1987-07-13
    • Takeo OnoHitoshi Oda
    • Takeo OnoHitoshi Oda
    • G11C19/08
    • G11C19/0841
    • A process for transferring Bloch lines formed in a magnetic wall of a magnetic domain and a magnetic memory apparatus for recording/reproducing information in utilizing Bloch lines formed in the magnetic wall of the magnetic domain as a information carrier are disclosed. The process comprises steps of forming a positive or negative magnetic charge area in the magnetic wall, thereby attaching a Bloch line to the area, and moving the magnetic charge area, thereby moving the Bloch line. The apparatus comprises a memory substrate having a stripe-shaped magnetic domain, a way to write Bloch lines in the magnetic wall of the stripe-shaped magnetic domain according to input information, a way to read the Bloch lines so stored to reproduce the information in the form of electric signals and a way to apply a rotating magnetic field parallel to the plane of the memory substrate, to the stripe-shaped magnetic domain, to move the Bloch lines along the magnetic wall. As a result, the Bloch lines so written are transferred in succession to another location in the domain or to a read-out area.
    • 公开了一种用于传输形成在磁畴的磁壁中的Bloch线和用于在形成在磁畴的磁壁中的Bloch线作为信息载体来记录/再现信息的磁存储装置的处理。 该方法包括在磁壁中形成正或负磁荷区域的步骤,从而将Bloch线连接到该区域,并移动磁荷区域,从而移动Bloch线。 该装置包括具有条形磁畴的存储器衬底,根据输入信息将Bloch线写入条形磁畴的磁壁中的方式,读取如此存储的Bloch线以便再现信息的方式 电信号的形式和将平行于存储器基板的平面的旋转磁场施加到条形磁畴的方式,以沿着磁壁移动布洛赫线。 因此,如此写入的Bloch行连续转移到域中的另一个位置或读取区域。
    • 9. 发明授权
    • Method of transferring Bloch lines in the domain wall of a magnetic
domain, and a magnetic memory using the method
    • 在磁畴的畴壁中转移Bloch线的方法和使用该方法的磁存储器
    • US4974200A
    • 1990-11-27
    • US78845
    • 1987-07-28
    • Takeo OnoHitoshi OdaHisaaki KawadeAkira ShinmiTokihiko OguraMasao SugataKuniji Osabe
    • Takeo OnoHitoshi OdaHisaaki KawadeAkira ShinmiTokihiko OguraMasao SugataKuniji Osabe
    • G11C19/08
    • G11C19/0825
    • A method of transferring Bloch lines present in a domain wall of a magnetic domain formed in a thin magnetic firm, includes cyclically forming asymmetrical potential wells along the domain wall in order to locate the Bloch lines at predetermined positions of the domain wall, and applying a pulsed magnetic film to shift the Bloch lines from a predetermined potential well to another potential well. In a magnetic memory for recording information using Bloch lines as an information carrier, a memory substrate has a stripe magnetic domain defined by a domain wall along which asymmetrical potential wells are cyclically formed to stabilize the Bloch lines along the domain wall. The Bloch lines are written in the domain wall in accordance with input information, the Bloch lines so formed are read out, and the read-out Bloch lines are converted into an electrical signal. A pulsed magnetic field is applied in a direction perpendicular to a surface of the memory substrate for shifting the Bloch lines between potential wells.
    • 存在于形成在薄磁性公司中的磁畴的畴壁中的Bloch线的方法包括沿畴壁循环形成不对称势阱,以便将Bloch线定位在畴壁的预定位置,并施加 脉冲磁性膜将Bloch线从预定的势阱转移到另一个势阱。 在用于使用Bloch线作为信息载体记录信息的磁存储器中,存储器基板具有由畴壁限定的条状磁畴,沿着该磁畴周期地形成不对称势阱以使沿着畴壁稳定布洛赫线。 根据输入信息将Bloch线写入畴壁,读出如此形成的Bloch线,并将读出的Bloch线转换为电信号。 在垂直于存储器基板的表面的方向施加脉冲磁场,用于移动势阱之间的Bloch线。