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1. 发明授权

US5442226A Bipolar transistor having an emitter electrode formed of polysilicon 失效
标题翻译：具有由多晶硅形成的发射极的双极晶体管
公开(公告)号：US5442226A
公开(公告)日：1995-08-15
申请号：US51780
申请日：1993-04-26
申请人： Takeo Maeda , Hiroshi Gojohbori , Takeo Nakayama
发明人： Takeo Maeda , Hiroshi Gojohbori , Takeo Nakayama
IPC分类号： H01L21/8249 , H01L27/06 , H01L29/417 , H01L29/735 , H01L29/43
CPC分类号： H01L27/0623 , H01L29/41708
摘要： In a semiconductor device, an emitter electrode has a polysilicon layer provided in a first contact hole and on a first insulating film. The polysilicon layer is in contact with an emitter region and is covered with a metal layer. A second contact hole is provided on a part of a second insulating film located on a substantially flat portion of the metal layer. A third contact hole is provided in those portions of the first insulating film and a second insulating layer which are located on a base region.
摘要翻译：在半导体器件中，发射极电极具有设置在第一接触孔中的第一绝缘膜上的多晶硅层。多晶硅层与发射极区域接触并被金属层覆盖。第二接触孔设置在位于金属层的基本平坦部分上的第二绝缘膜的一部分上。第三接触孔设置在位于基底区域的第一绝缘膜和第二绝缘层的那些部分中。

2. 发明授权

US5075752A Bi-CMOS semiconductor device having memory cells formed in isolated wells 失效
标题翻译：具有在隔离壁中形成的记忆电池的BI-CMOS半导体器件
公开(公告)号：US5075752A
公开(公告)日：1991-12-24
申请号：US480762
申请日：1990-02-16
申请人： Takeo Maeda , Syuso Fujii
发明人： Takeo Maeda , Syuso Fujii
IPC分类号： H01L29/73 , H01L21/331 , H01L21/8249 , H01L27/06 , H01L27/10 , H01L27/11 , H01L29/732
CPC分类号： H01L27/11 , H01L27/0623
摘要： A Bi-CMOS semiconductor device includes a P-type semiconductor substrate, an N-type buried layer formed in the semiconductor substrate, a P-type well region formed on the buried layer, and an N-channel MOS transistor formed in a first predetermined area of the well region. The Bi-CMOS semiconductor device further includes an N-type surrounding layer formed to surround the well region in cooperation with the buried layer. The surrounding layer electrically isolates the well region from the substrate and the other P-type well region.

3. 发明授权

US3997825A Method and apparatus for controlling synchronous motor 失效
标题翻译：用于控制同步电动机的方法和装置
公开(公告)号：US3997825A
公开(公告)日：1976-12-14
申请号：US512924
申请日：1974-10-07
申请人： Kunio Miyasita , Hironori Okuda , Yasuyuki Sugiura , Takeo Maeda , Yasuo Matsuda , Kazuo Honda
发明人： Kunio Miyasita , Hironori Okuda , Yasuyuki Sugiura , Takeo Maeda , Yasuo Matsuda , Kazuo Honda
IPC分类号： H02P27/06 , H02P5/74 , H02P6/08 , H02P6/22 , H02P25/02 , H02P5/34
CPC分类号： H02P5/74 , H02P25/03
摘要： In the control of a synchronous motor driven by a power converter of voltage source type, the phase of the current flowing into the motor is detected and gate signals are produced on the basis of the phase of the current, so that the output frequency of the power converter is controlled by the gate signals so as to control the motor.
摘要翻译：在由电压源式电力转换器驱动的同步电动机的控制中，检测流入电动机的电流的相位，并根据电流的相位产生门信号，使得输出频率功率转换器由门信号控制，以控制电机。

4. 发明授权

US3939387A Variable frequency power converter for ac motor drive 失效
标题翻译：用于交流电机驱动的变频电源转换器
公开(公告)号：US3939387A
公开(公告)日：1976-02-17
申请号：US462534
申请日：1974-04-19
申请人： Takeo Maeda
发明人： Takeo Maeda
IPC分类号： H02M1/14 , H02M5/45 , H02M7/48 , H02P27/06 , H02P5/40
CPC分类号： H02P27/06 , H02M1/14 , H02M5/4505 , H02P2201/03
摘要： In a variable frequency power converter of a current type for driving an AC motor including a rectifier, an inverter, and a smoothing reactor disposed on a DC transmission line between the rectifier and the inverter, there are provided a series circuit having a switching circuit and a smoothing capacitor on the DC input side of the inverter and a feedback circuit having controlled rectifier elements and commutation reactors for feeding back the reactive power of the AC motor. The power converter operates as a current type converter until the output frequency of the converter reaches a predetermined value under the condition that the switching circuit and the controlled rectifier elements are non-conductive, and operates as a voltage type converter when the output frequency has reached the predetermined value under the condition that the switching circuit and the controlled rectifier elements are conductive.
摘要翻译：在用于驱动包括整流器，逆变器和设置在整流器与逆变器之间的直流传输线上的平滑电抗器的交流电动机的电流型变频电力变换器中，提供一种具有开关电路和在逆变器的直流输入侧的平滑电容器和具有可控整流元件的反馈电路和用于反馈交流电动机的无功功率的换向电抗器。电源转换器作为电流型转换器工作，直到转换器的输出频率在开关电路和可控整流元件不导通的条件下达到预定值，并且当输出频率达到时作为电压型转换器工作在开关电路和可控整流元件导通的条件下的预定值。

5. 发明授权

US5523242A Method of manufacturing a BiMOS device 失效
标题翻译：制造BiMOS器件的方法
公开(公告)号：US5523242A
公开(公告)日：1996-06-04
申请号：US243919
申请日：1994-05-17
申请人： Takeo Maeda , Hiroshi Momose
发明人： Takeo Maeda , Hiroshi Momose
IPC分类号： H01L21/285 , H01L21/331 , H01L21/8249 , H01L21/265
CPC分类号： H01L29/66272 , H01L21/28525 , H01L21/8249 , Y10S148/009
摘要： A method of manufacturing a semiconductor device. A semiconductor substrate is prepared and a gate oxide film is formed on a surface of the semiconductor substrate. The gate oxide film is selectively removed to expose portions of the semiconductor substrate and a first polysilicon layer is formed on a resultant semiconductor structure. Impurities are implanted in the polysilicon layer and a resultant semiconductor structure is annealed to activate the impurities. The first polysilicon layer is patterned to form a base electrode of the bipolar transistor and a source drain electrode of the MOS transistor. An insulating layer is then formed on a resultant semiconductor structure. Portions of the semiconductor substrate are then selectively exposed and a second polysilicon layer is formed on a resultant semiconductor structure. The second polysilicon layer is then patterned to form an emitter electrode of the bipolar transistor.
摘要翻译：一种制造半导体器件的方法。制备半导体衬底，并且在半导体衬底的表面上形成栅极氧化膜。选择性地去除栅极氧化膜以暴露半导体衬底的部分，并且在所得半导体结构上形成第一多晶硅层。将杂质注入多晶硅层，并将所得半导体结构退火以活化杂质。图案化第一多晶硅层以形成双极晶体管的基极和MOS晶体管的源极漏极。然后在所得半导体结构上形成绝缘层。然后选择性地暴露半导体衬底的部分，并且在所得半导体结构上形成第二多晶硅层。然后将第二多晶硅层图案化以形成双极晶体管的发射极。

6. 发明授权

US5506168A Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5506168A
公开(公告)日：1996-04-09
申请号：US321132
申请日：1994-10-11
申请人： Shigeru Morita , Fumitomo Matsuoka , Hisao Yoshimura , Takeo Maeda
发明人： Shigeru Morita , Fumitomo Matsuoka , Hisao Yoshimura , Takeo Maeda
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/76 , H01L21/762
CPC分类号： H01L21/76237 , Y10S438/978
摘要： A method for manufacturing a semiconductor device of the present invention has the step of forming an insulation material on a main surface of a semiconductor substrate. A groove is formed to extend from the surface of the material film to the substrate. The groove is buried with a first insulation film. By use of the first insulation film as an etching mask, the material film is removed, so that a projecting portion projecting to the first insulation film from the main surface can be obtained. A second insulation film is formed on a side surface or the projecting portion in a slope shape, which is from the top portion of the projecting portion to the main surface.
摘要翻译：本发明的半导体器件的制造方法具有在半导体基板的主面上形成绝缘材料的工序。形成从材料膜的表面延伸到基底的凹槽。凹槽用第一绝缘膜掩埋。通过使用第一绝缘膜作为蚀刻掩模，去除材料膜，从而可以获得从主表面突出到第一绝缘膜的突出部分。第二绝缘膜形成在从突出部分的顶部到主表面的倾斜形状的侧面或突出部分上。

7. 发明授权

US5406115A Semiconductor device including bipolar transistor having shallowed base and method for manufacturing the same 失效
标题翻译：包括具有浅基底的双极晶体管的半导体器件及其制造方法
公开(公告)号：US5406115A
公开(公告)日：1995-04-11
申请号：US52919
申请日：1993-04-27
申请人： Takeo Maeda , Hiroshi Gojohbori , Yoshitaka Tsunashima
发明人： Takeo Maeda , Hiroshi Gojohbori , Yoshitaka Tsunashima
IPC分类号： H01L29/73 , H01L21/331 , H01L27/06 , H01L29/10 , H01L29/732 , H01L29/72 , H01L27/02
CPC分类号： H01L29/7322 , H01L27/0623 , H01L29/1004
摘要： A semiconductor device of this invention includes an N-type semiconductor region functioning as a collector of a bipolar transistor, a silicon dioxide film doped with boron and formed in contact with the surface of the N-type semiconductor region, a P-type semiconductor region formed in contact with the silicon dioxide film doped with boron in the N-type semiconductor region and functioning as a base of the bipolar transistor, and an N-type semiconductor region formed in the P-type semiconductor region and functioning as an emitter of the bipolar transistor.
摘要翻译：本发明的半导体器件包括用作双极晶体管的集电极的N型半导体区域，掺杂有硼并与N型半导体区域的表面接触形成的二氧化硅膜，P型半导体区域形成为与N型半导体区域中掺杂有硼的二氧化硅膜接触并用作双极晶体管的基极，并且形成在P型半导体区域中并用作发光体的N型半导体区域双极晶体管。

8. 发明授权

US5278099A Method for manufacturing a semiconductor device having wiring electrodes 失效
标题翻译：具有布线电极的半导体器件的制造方法
公开(公告)号：US5278099A
公开(公告)日：1994-01-11
申请号：US976664
申请日：1992-11-16
申请人： Takeo Maeda
发明人： Takeo Maeda
IPC分类号： H01L23/532 , H01L29/45 , H01L21/44
CPC分类号： H01L23/53223 , H01L29/456 , H01L2924/0002
摘要： A semiconductor device of the invention has a p.sup.+ -type silicon source region, an insulating film formed on the source region and having a contact hole, and a wiring electrode connected to the source region through the contact hole. The wiring electrode has a Ti layer formed on the insulating film and an exposed surface of the source region, a TiN layer formed on the Ti layer, and an Al layer formed on the TiN layer.
摘要翻译：本发明的半导体器件具有p +型硅源区域，形成在源极区上并具有接触孔的绝缘膜，以及通过接触孔与源极区域连接的布线电极。布线电极具有形成在绝缘膜上的Ti层和源极区域的暴露表面，形成在Ti层上的TiN层和在TiN层上形成的Al层。

9. 发明授权

US5091760A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5091760A
公开(公告)日：1992-02-25
申请号：US507037
申请日：1990-04-10
申请人： Takeo Maeda , Hiroshi Momose
发明人： Takeo Maeda , Hiroshi Momose
IPC分类号： H01L21/285 , H01L21/331 , H01L21/8249
CPC分类号： H01L29/66272 , H01L21/28525 , H01L21/8249 , Y10S148/009
摘要： A semiconductor device includes a semiconductor substrate, a bipolar transistor and a MOS transistor. The bipolar transistor is formed on the semiconductor substrate and has electrodes. A base electrode of the bipolar transistor and the electrodes of the MOS transistor contain the same kind of impurity so as to form a single layer.
摘要翻译：半导体器件包括半导体衬底，双极晶体管和MOS晶体管。双极晶体管形成在半导体衬底上并具有电极。双极晶体管的基极和MOS晶体管的电极含有相同种类的杂质以形成单层。

10. 发明授权

US4931407A Method for manufacturing integrated bipolar and MOS transistors 失效
标题翻译：集成双极和MOS晶体管的制造方法
公开(公告)号：US4931407A
公开(公告)日：1990-06-05
申请号：US211010
申请日：1988-06-24
申请人： Takeo Maeda , Koji Makita
发明人： Takeo Maeda , Koji Makita
IPC分类号： H01L21/8249
CPC分类号： H01L21/8249
摘要： A method for manufacturing MOS and bipolar transistors is proposed which includes MOS and bipolar transistors. The method comprises implanting impurity ions in a channel formation region with a dummy gate insulating film interposed and, subsequent to forming a gate oxide film on the surface of the resultant structure, impurity ions are implanted into an internal base region of the bipolar transistor.

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