专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06794206B2 Method of polishing a film 失效
标题翻译：抛光膜的方法
公开(公告)号：US06794206B2
公开(公告)日：2004-09-21
申请号：US10232707
申请日：2002-09-03
申请人： Takenori Hirose , Mineo Nomoto , Hiroyuki Kojima , Hidemi Sato
发明人： Takenori Hirose , Mineo Nomoto , Hiroyuki Kojima , Hidemi Sato
IPC分类号： H01L2166
CPC分类号： B24B37/013 , B24B49/04 , B24B49/12
摘要： A method of polishing a film formed on a wafer includes steps of polishing a film formed on a surface of a wafer which is chucked by a wafer chuck and set on a polishing disk so that the film faces the polishing disk, irradiating a plurality of portions of the film under polishing process with lights having different wavelengths from one another through a plurality of holes formed in the polishing disk, detecting lights reflected from the plurality of portions of the film caused by the irradiation, evaluating a thickness distribution of the film from information of an intensity ratio of the detected reflected lights, and controlling a pushing pressure of the wafer chuck according to the evaluated thickness distribution under polishing process.
摘要翻译：抛光形成在晶片上的膜的方法包括以下步骤：在由晶片卡盘夹持的晶片表面上形成的膜进行抛光，并将其设置在研磨盘上，使得该膜面向抛光盘，照射多个部分通过形成在研磨盘中的多个孔彼此不同波长的光进行研磨处理，检测从照射引起的膜的多个部分反射的光，从信息中评价胶片的厚度分布检测反射光的强度比，根据研磨过程中的评价厚度分布来控制晶片卡盘的推压。

2. 发明授权

US06897079B2 Method of detecting and measuring endpoint of polishing processing and its apparatus and method of manufacturing semiconductor device using the same 失效
标题翻译：检测和测量抛光处理终点的方法及其使用该方法的半导体器件及其制造方法
公开(公告)号：US06897079B2
公开(公告)日：2005-05-24
申请号：US09800495
申请日：2001-03-08
申请人： Takenori Hirose , Mineo Nomoto , Hiroyuki Kojima , Hidemi Sato
发明人： Takenori Hirose , Mineo Nomoto , Hiroyuki Kojima , Hidemi Sato
IPC分类号： B24B53/00 , B24B37/013 , B24B49/04 , B24B49/12 , B24B53/017 , H01L21/304 , H01L21/306 , H01L21/66 , H01L21/302
CPC分类号： B24B37/013 , B24B49/04 , B24B49/12
摘要： Laser sources output laser lights L1 and L2 having different wavelengths so as to increase an accuracy of an endpoint detection of polishing processing by enabling an accurate detection of a film thickness of a layer insulating film on a surface of a wafer to be polished by the CMP processing, the lights are emitted from a detection window via a beam splitter to the layer insulating film formed on the surface of the wafer to be polished by a pad, different optical detectors detect interference lights corresponding to the laser lights L1 and L2 reflected and generated from a surface of the layer insulating film and a pattern under the surface via the detection window, the beam splitter, and a dichroic mirror, the detection results are supplied to a film thickness evaluation unit 7, a film thickness of the layer insulation film is detected on the basis of a relationship between intensities of the reflected interference lights to the laser lights L1 and L2 or the intensity ratio, and an endpoint of polishing processing is determined when the film thickness is equal to a predetermined value.
摘要翻译：激光源输出具有不同波长的激光L 1和L 2 2，以便通过能够精确地检测到膜厚度的精确检测来提高抛光加工的终点检测的精度通过CMP处理在待抛光的晶片的表面上的层绝缘膜，光从检测窗通过分束器发射到通过垫进行抛光的晶片表面上形成的层绝缘膜，不同的光检测器检测对应于从层绝缘膜的表面反射和产生的激光L 1和L 2 2的干涉光，以及通过检测窗口在表面下方的图案分束器和分色镜，将检测结果提供给膜厚评估单元7，根据反射干涉光的强度与激光束之间的关系来检测层间绝缘膜的膜厚度 ts L 1和L 2 2或强度比，并且当膜厚度等于预定值时确定抛光处理的终点。

3. 发明授权

US07020306B2 Polishing pad surface condition evaluation method and an apparatus thereof and a method of producing a semiconductor device 失效
标题翻译：抛光垫表面状态评价方法及其装置以及半导体装置的制造方法
公开(公告)号：US07020306B2
公开(公告)日：2006-03-28
申请号：US09774723
申请日：2001-02-01
申请人： Takenori Hirose , Hiroyuki Kojima , Mineo Nomoto , Susumu Aiuchi
发明人： Takenori Hirose , Hiroyuki Kojima , Mineo Nomoto , Susumu Aiuchi
IPC分类号： G06K9/00
CPC分类号： B24B37/20 , B24B49/12 , G01N21/41 , G01N21/55
摘要： The object of the present invention is to establish a technology for directly evaluating polishing pad surface conditions, to allow high-precision CMP process management, and to improve process throughput. The pad surface is illuminated with light. The intensity of reflected light or fluorescence from the illuminated area or an intensity distribution image is used directly evaluate the pad surface condition. Based on the results of this evaluation, conditioning conditions for a conditioner are optimized, thus allowing high-precision CMP processing while maintaining good pad surface conditions.
摘要翻译：本发明的目的是建立一种用于直接评估抛光垫表面状态，允许高精度CMP处理管理并提高工艺生产能力的技术。焊盘表面用光照亮。使用来自照射区域的反射光或荧光的强度或强度分布图像直接评估焊盘表面状况。根据该评价结果，对调理剂的调理条件进行优化，从而在保持良好的垫表面状态的同时进行高精度的CMP处理。

4. 发明授权

US06531399B2 Polishing method 失效
公开(公告)号：US06531399B2
公开(公告)日：2003-03-11
申请号：US09949642
申请日：2001-09-12
申请人： Hiroyuki Kojima , Tetsuo Ohkawa , Hidemi Sato
发明人： Hiroyuki Kojima , Tetsuo Ohkawa , Hidemi Sato
IPC分类号： H01L21461
CPC分类号： B24B53/017 , B24B37/013 , B24B37/042 , B24B49/10 , B24B49/16
摘要： The present invention aims at make automatic real-time measurement of the removal rate in during polishing. For achieving the aim, a polishing system is provided with a sensor 1 for measuring a friction generated between a polishing pad and a workpiece during the polishing. The information processor of the polishing system evaluates the polishing efficiency of the polishing pad 5 on the basis of a fluctuation in the removal rate which is successively obtained from a friction successively detected by the sensor and a predetermined function. The result of the evaluation is used for the determination of the execution timing of a dressing process for the polishing pad, the calculation of the removal from the workpiece, and the like.

5. 发明授权

US06648728B2 Polishing system 失效
公开(公告)号：US06648728B2
公开(公告)日：2003-11-18
申请号：US09949605
申请日：2001-09-12
申请人： Hiroyuki Kojima , Tetsuo Ohkawa , Hidemi Sato
发明人： Hiroyuki Kojima , Tetsuo Ohkawa , Hidemi Sato
IPC分类号： B24B4900
CPC分类号： B24B53/017 , B24B37/013 , B24B37/042 , B24B49/10 , B24B49/16
摘要： The present invention aims at make automatic real-time measurement of the removal rate in during polishing. For achieving the aim, a polishing system is provided with a sensor 1 for measuring a friction generated between a polishing pad and a workpiece during the polishing. The information processor of the polishing system evaluates the polishing efficiency of the polishing pad 5 on the basis of a fluctuation in the removal rate which is successively obtained from a friction successively detected by the sensor and a predetermined function. The result of the evaluation is used for the determination of the execution timing of a dressing process for the polishing pad, the calculation of the removal from the workpiece, and the like.

6. 发明授权

US06576552B2 Method for polishing semiconductor device 失效
公开(公告)号：US06576552B2
公开(公告)日：2003-06-10
申请号：US10103689
申请日：2002-03-25
申请人： Hiroyuki Kojima , Hidemi Sato , Tetsuo Ookawa , Mariko Urushibara
发明人： Hiroyuki Kojima , Hidemi Sato , Tetsuo Ookawa , Mariko Urushibara
IPC分类号： H01L21302
CPC分类号： H01L21/31053 , B24B37/042 , B24B37/046 , H01L21/30625
摘要： To provide a method having stable high polishing efficiency in the CMP of an LSI wafer and means for reducing the amount of use of consumable items such as a polishing liquid and a pad, an electric field is applied to the abrasive grains on a pad to attract the abrasive grains into a diffusion layer in the polishing liquid solvent near the surface of the pad, thereby holding the abrasive grains in the diffusion layer.

7. 发明授权

US06489243B2 Method for polishing semiconductor device 失效
公开(公告)号：US06489243B2
公开(公告)日：2002-12-03
申请号：US10062668
申请日：2002-02-05
申请人： Hiroyuki Kojima , Hidemi Sato , Tetsuo Ookawa , Mariko Urushibara
发明人： Hiroyuki Kojima , Hidemi Sato , Tetsuo Ookawa , Mariko Urushibara
IPC分类号： H01L21302
CPC分类号： H01L21/31053 , B24B37/042 , B24B37/046 , H01L21/30625
摘要： To provide a method having stable high polishing efficiency in the CMP of an LSI wafer and means for reducing the amount of use of consumable items such as a polishing liquid and a pad, an electric field is applied to the abrasive grains on a pad to attract the abrasive grains into a diffusion layer in the polishing liquid solvent near the surface of the pad, thereby holding the abrasive grains in the diffusion layer.

8. 发明授权

US06420265B1 Method for polishing semiconductor device 失效
公开(公告)号：US06420265B1
公开(公告)日：2002-07-16
申请号：US09308184
申请日：1999-05-14
申请人： Hiroyuki Kojima , Hidemi Sato , Tetsuo Ookawa , Mariko Urushibara
发明人： Hiroyuki Kojima , Hidemi Sato , Tetsuo Ookawa , Mariko Urushibara
IPC分类号： H01L21302
CPC分类号： H01L21/31053 , B24B37/042 , B24B37/046 , H01L21/30625
摘要： To provide a method having stable high polishing efficiency in the CMP of an LSI wafer and means for reducing the amount of use of consumable items such as a polishing liquid and a pad, an electric field is applied to the abrasive grains on a pad to attract the abrasive grains into a diffusion layer in the polishing liquid solvent near the surface of the pad, thereby holding the abrasive grains in the diffusion layer.

9. 发明授权

US09303752B2 Shift change controlling apparatus 有权
标题翻译：换档控制装置
公开(公告)号：US09303752B2
公开(公告)日：2016-04-05
申请号：US13013353
申请日：2011-01-25
申请人： Yoshiaki Nedachi , Hiroyuki Kojima , Dai Arai
发明人： Yoshiaki Nedachi , Hiroyuki Kojima , Dai Arai
IPC分类号： F16H59/72 , F16H57/00 , F16D48/06 , F16H61/06 , F16H61/688
CPC分类号： F16H57/0006 , F16D48/064 , F16D2500/1025 , F16D2500/1026 , F16D2500/1086 , F16D2500/3024 , F16D2500/30803 , F16D2500/50236 , F16D2500/7044 , F16H61/061 , F16H61/688 , F16H2306/18 , Y10T74/20024
摘要： The twin clutch-type transmission can include a hydraulic twin clutch including the first clutch and the second clutch disposed on main shafts. The shift change controlling apparatus is configured to control shift change operation to and adjacent speed change stage by alternately changing an engagement state of the first clutch and the second clutch. The shift change controlling apparatus can also execute a pre-shift change of supplying a pre-pressure on one of the first and second clutches, while another of the first and second clutches is engaged. The pre-pressure provides a pre-engagement of the unengaged clutch. First and second clutch actuators are configured to actuate the first and second clutches, respectively. When the pre-shift change is executed, the pre-pressure is applied for a predetermined period and then removed prior to a driving of a shift gear or actuating a shift change.
摘要翻译：双离合器式变速器可以包括液压双离合器，其包括设置在主轴上的第一离合器和第二离合器。变速控制装置被配置为通过交替地改变第一离合器和第二离合器的接合状态来控制到相邻变速级的变速操作。换档控制装置还可以执行在第一和第二离合器中的一个上提供预压力的预换档变化，同时第一和第二离合器中的另一个被接合。预压力提供未接合离合器的预接合。第一和第二离合器致动器被配置成分别致动第一和第二离合器。当执行预换档更换时，将预压力施加预定时间段，然后在变速档驱动或启动换挡变化之前被移除。

10. 发明授权

US09125265B2 Light-emitting device control circuit 有权
标题翻译：发光装置控制电路
公开(公告)号：US09125265B2
公开(公告)日：2015-09-01
申请号：US13569945
申请日：2012-08-08
申请人： Hiroyuki Kojima , Noriaki Okada , Kazuhiko Saito , Shuhei Kawai , Feng Xu
发明人： Hiroyuki Kojima , Noriaki Okada , Kazuhiko Saito , Shuhei Kawai , Feng Xu
IPC分类号： H05B33/08 , H05B37/02
CPC分类号： H05B33/0818 , H05B33/0851
摘要： In a control circuit for a light-emitting device, a reference voltage generation circuit detects a full-wave rectified voltage and generates a first voltage as well as generating a second voltage by converting the rectified voltage into a DC voltage. A voltage corresponding to a difference between the first voltage and the second voltage or a voltage corresponding to a ratio of the first voltage to the second voltage is generated as a reference voltage by a subtraction circuit or by a division circuit, respectively. As a result, a change in amplitude of the reference voltage can be suppressed when amplitude of the rectified voltage is varied due to a variation in an AC input voltage supplied from an AC power supply.
摘要翻译：在发光装置的控制电路中，参考电压产生电路检测全波整流电压，并通过将整流电压转换成直流电压来产生第一电压以及产生第二电压。相应于第一电压和第二电压之间的差的电压或对应于第一电压与第二电压的比率的电压分别由减法电路或分频电路产生作为参考电压。结果，由于由交流电源供给的交流输入电压的变化，整流电压的振幅变化，可以抑制基准电压的振幅的变化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式