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    • 1. 发明授权
    • Semiconductor device downsizing its built-in driver
    • 半导体器件缩小其内置驱动器
    • US06756803B2
    • 2004-06-29
    • US10330072
    • 2002-12-30
    • Manabu MiuraMakoto HatakenakaTakekazu Yamashita
    • Manabu MiuraMakoto HatakenakaTakekazu Yamashita
    • G01R3102
    • G01R31/2884H01L2224/05554H01L2224/48091H01L2224/48137H01L2224/49175H01L2924/3011H01L2924/00014H01L2924/00
    • A semiconductor device includes a first pad, a second pad, a first buffer and a second buffer. The first pad is connected to another semiconductor device in a multi-chip package, and the second pad makes a probing connection in a wafer test. The first buffer drives the another semiconductor device connected to the first pad. The second buffer, being driven by the first buffer, drives a load capacitance of a tester connected to the second pad with the driving power greater than the driving power of the first buffer, and has its active/inactive state controlled by a control signal. The semiconductor device can provide the driving power necessary for the wafer test, and drive the another semiconductor device with preventing generation of drive noise and suppressing current consumption in the normal operation of the multi-chip package.
    • 半导体器件包括第一焊盘,第二焊盘,第一缓冲器和第二缓冲器。 第一焊盘以多芯片封装连接到另一半导体器件,并且第二焊盘在晶片测试中进行探测连接。 第一缓冲器驱动连接到第一焊盘的另一个半导体器件。 由第一缓冲器驱动的第二缓冲器以大于第一缓冲器的驱动功率的驱动功率驱动连接到第二焊盘的测试仪的负载电容,并且由控制信号控制其主动/不活动状态。 半导体器件可以提供晶片测试所需的驱动功率,并驱动另一半导体器件,防止产生驱动噪声并抑制多芯片封装的正常工作中的电流消耗。
    • 3. 发明授权
    • Variable delay circuit for varying delay time and pulse width
    • 可变延迟电路,用于改变延迟时间和脉冲宽度
    • US5949268A
    • 1999-09-07
    • US914803
    • 1997-08-15
    • Manabu MiuraMakoto Hatakenaka
    • Manabu MiuraMakoto Hatakenaka
    • H03K5/04H03K5/13H03K17/16H03K17/687
    • H03K17/164H03K5/131
    • A variable delay circuit for controlling delay time includes P channel transistors connected in parallel, with respective source electrodes connected to a power supply, respective drain electrodes connected to an output terminal for providing delayed signal, and respective gate electrodes connected to respective control signal input terminals for receiving control signals. The circuit further includes N channel transistors with respective source electrodes connected to ground, respective drain electrodes connected to the output terminal, and respective gate electrode connected to the respective control signal input terminals. Identical or mutually inverted data signals or control signals are supplied to the respective gate electrodes of the P channel transistors and the respective gate electrodes of the N channel transistors.
    • 用于控制延迟时间的可变延迟电路包括并联连接的P沟道晶体管,各个源电极连接到电源,连接到用于提供延迟信号的输出端的相应漏电极以及连接到相应控制信号输入端的各个栅电极 用于接收控制信号。 电路还包括具有连接到地的各个源极的N沟道晶体管,连接到输出端的相应的漏极和连接到各个控制信号输入端的相应的栅电极。 将相同或相互反转的数据信号或控制信号提供给P沟道晶体管的各个栅电极和N沟道晶体管的各个栅电极。
    • 4. 发明授权
    • Method of testing a semiconductor memory device
    • 测试半导体存储器件的方法
    • US06715117B2
    • 2004-03-30
    • US09761847
    • 2001-01-18
    • Atsuo MangyoManabu MiuraMakoto Hatakenaka
    • Atsuo MangyoManabu MiuraMakoto Hatakenaka
    • G11C2900
    • G11C29/48G11C29/08
    • A method for testing a semiconductor memory device according to one embodiment comprises the steps of: checking data in all addresses of the semiconductor memory device for correctness in-units of m×n bits: ending if it is determined that data in all the semiconductor memory device; if there is a defective address, comparing each m-bit data constituting the (m×n)-bit data corresponding to the defective address with its expected value; and if the comparison result indicates that the m-bit data is erroneous, determining whether the defective semiconductor memory device can be repaired. Due to this step, man hours required for testing a semiconductor memory device having a wide data bus of an (m×n)-bit width can be considerably reduced.
    • 根据一个实施例的用于测试半导体存储器件的方法包括以下步骤:检查半导体存储器件的所有地址中的数据,以确定m×n位的单位的正确性:如果确定所有半导体存储器件中的数据,则结束; 如果存在缺陷地址,则将构成与缺陷地址相对应的(m×n)位数据的每个m位数据与其期望值进行比较; 并且如果比较结果表明m位数据是错误的,则确定是否可以修复有缺陷的半导体存储器件。 由于该步骤,可以显着地减少测试具有宽(mxn)位宽的数据总线的半导体存储器件所需的工时。
    • 5. 发明授权
    • Line delay generator using one-port RAM
    • 线路延迟发生器使用单端口RAM
    • US06570572B1
    • 2003-05-27
    • US09303623
    • 1999-05-03
    • Manabu MiuraMakoto HatakenakaMikio Tada
    • Manabu MiuraMakoto HatakenakaMikio Tada
    • G09G539
    • G06F5/10H04N5/14
    • A line delay generator including a packetizing circuit, one port RAM and a RAM controller. The RAM controller provides the one port RAM with a write command to write packet data generated by the packetizing circuit, and with a read command to read any one or more packet data currently stored in the one port RAM, and output them as line delay data. The line delay generator can solve a problem involved in a conventional line delay generator in that because m (positive integer) two-port FIFOs must be connected in cascade to generate m line delay data, the FIFO memory becomes bulky.
    • 线延迟发生器,包括分组化电路,一个端口RAM和一个RAM控制器。 RAM控制器为单端口RAM提供写入命令,以写入由分组化电路产生的分组数据,并且读取命令读取当前存储在一个端口RAM中的任何一个或多个分组数据,并将其作为行延迟数据输出 。 线路延迟发生器可以解决传统线路延迟发生器中涉及的问题,因为m(正整数)双端口FIFO必须级联连接以产生m线延迟数据,因此FIFO存储器变得庞大。
    • 7. 发明申请
    • Control apparatus for an internal combustion engine
    • 一种用于内燃机的控制装置
    • US20060130807A1
    • 2006-06-22
    • US11314276
    • 2005-12-21
    • Manabu Miura
    • Manabu Miura
    • F02D41/30
    • F02D31/001F02D41/083
    • To allow control of the revolution with good response during idling operation even if the air excess coefficient is reduced, thereby reducing the isovolumetric level in a diesel engine, the isovolumetric level CVOL is estimated based on at least one of air excess coefficient, fuel ignition timing, and pressure end temperature inside a cylinder. The engine load FMOT is estimated based on at least one of intake air pressure, EGR rate, air excess coefficient, water temperature, and auxiliary load. The idle injection rate is calculated from the isovolumetric level CVOL and engine load FMOT.
    • 为了在怠速运转期间能够在空转操作期间具有良好响应的旋转控制,即使空气过剩系数降低,从而降低柴油发动机的等容积水平,基于空气过剩系数,燃料点火正时中的至少一个来估计等容量水平CVOL ,以及气缸内的压力结束温度。 基于进气压力,EGR率,空气过剩系数,水温和辅助负荷中的至少一个来估计发动机负荷FMOT。 怠速喷射速率由等体积水平CVOL和发动机负载FMOT计算。
    • 8. 发明申请
    • Deterioration diagnosis of diesel particulate filter
    • 柴油颗粒过滤器的劣化诊断
    • US20050188681A1
    • 2005-09-01
    • US11063869
    • 2005-02-24
    • Masahiko EmiManabu Miura
    • Masahiko EmiManabu Miura
    • F01N3/00F01N3/023F01N7/00F01N11/00F02D41/14
    • F01N3/023F01N3/0231F01N11/007F01N2330/06F01N2550/04F02D41/1441F02D41/1495Y02T10/47
    • A filter (14) traps particulate matter contained in the exhaust gas of a diesel engine (1). The filter (14) is regenerated by burning the trapped particulate matter through an operation to raise the exhaust gas temperature. An oxidation catalyst which promotes combustion of the particulate matter is coated onto the filter (14). The oxygen concentration of the exhaust gas upstream of the filter (14) and the oxygen concentration of the exhaust gas downstream of the filter (14) during the regeneration period are detected using universal exhaust gas oxygen sensors (17, 16). A controller (25) determines a substantial regeneration period on the basis of the difference between these oxygen concentrations, and by comparing a maximum value of the difference between the oxygen concentrations during the substantial regeneration period with a predetermined threshold, determines deterioration of the filter (14) with a high degree of precision.
    • 过滤器(14)捕获包含在柴油发动机(1)的废气中的颗粒物质。 过滤器(14)通过燃烧被捕获的颗粒物质进行再生来提高废气温度。 促进颗粒物质燃烧的氧化催化剂被涂覆在过滤器(14)上。 使用通用排气氧传感器(17,16)检测在再生期间过滤器(14)上游的废气的氧浓度和过滤器(14)下游的排气的氧浓度。 控制器(25)基于这些氧气浓度之间的差异确定实质上的再生时间,并且通过将实质再生期间的氧浓度之间的差的最大值与预定阈值进行比较,确定过滤器的劣化( 14)精度高。