专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070007603A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20070007603A1
公开(公告)日：2007-01-11
申请号：US11481909
申请日：2006-07-07
申请人： Takayuki Yamada , Atsuhiro Kajiya , Satoshi Ishikura
发明人： Takayuki Yamada , Atsuhiro Kajiya , Satoshi Ishikura
IPC分类号： H01L29/76
CPC分类号： H01L27/11 , H01L27/0203 , Y10S257/903
摘要： A first semiconductor region has a smaller width along a gate length direction than a second semiconductor region. In this case, the first semiconductor region has a larger width along a gate width direction than the second semiconductor region.
摘要翻译：第一半导体区域沿栅极长度方向具有比第二半导体区域更小的宽度。在这种情况下，第一半导体区域沿栅极宽度方向的宽度比第二半导体区域宽。

2. 发明授权

US07554163B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07554163B2
公开(公告)日：2009-06-30
申请号：US11481909
申请日：2006-07-07
申请人： Takayuki Yamada , Atsuhiro Kajiya , Satoshi Ishikura
发明人： Takayuki Yamada , Atsuhiro Kajiya , Satoshi Ishikura
IPC分类号： H01L29/76
CPC分类号： H01L27/11 , H01L27/0203 , Y10S257/903
摘要： A first semiconductor region has a smaller width along a gate length direction than a second semiconductor region. In this case, the first semiconductor region has a larger width along a gate width direction than the second semiconductor region.
摘要翻译：第一半导体区域沿着栅极长度方向的宽度比第二半导体区域小。在这种情况下，第一半导体区域沿栅极宽度方向的宽度比第二半导体区域宽。

3. 发明申请

US20070007617A1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070007617A1
公开(公告)日：2007-01-11
申请号：US11480909
申请日：2006-07-06
申请人： Masayuki Nakamura , Satoshi Ishikura , Takayuki Yamada
发明人： Masayuki Nakamura , Satoshi Ishikura , Takayuki Yamada
IPC分类号： H01L29/00 , G11C11/00
CPC分类号： H01L27/11
摘要： An isolation insulating film is formed so that an active region of a first access transistor and a substrate contact region can be integrated with each other in a plan view. A dummy gate electrode is formed on the semiconductor substrate between the active region of the first access transistor and the substrate contact region. The dummy gate electrode is electrically connected to a P-type impurity region of the substrate contact region.
摘要翻译：形成隔离绝缘膜，使得第一存取晶体管和基板接触区域的有源区域可以在平面图中彼此一体化。在第一存取晶体管的有源区和衬底接触区之间的半导体衬底上形成伪栅电极。虚拟栅电极与衬底接触区域的P型杂质区电连接。

4. 发明授权

US07859058B2 Semiconductor device having a SRAM with a substrate contact and method for fabricating the same 有权
标题翻译：具有具有基板接触的SRAM的半导体器件及其制造方法
公开(公告)号：US07859058B2
公开(公告)日：2010-12-28
申请号：US11480909
申请日：2006-07-06
申请人： Masayuki Nakamura , Satoshi Ishikura , Takayuki Yamada
发明人： Masayuki Nakamura , Satoshi Ishikura , Takayuki Yamada
IPC分类号： H01L27/088
CPC分类号： H01L27/11
摘要： An isolation insulating film is formed so that an active region of a first access transistor and a substrate contact region can be integrated with each other in a plan view. A dummy gate electrode is formed on the semiconductor substrate between the active region of the first access transistor and the substrate contact region. The dummy gate electrode is electrically connected to a P-type impurity region of the substrate contact region.
摘要翻译：形成隔离绝缘膜，使得第一存取晶体管和基板接触区域的有源区域可以在平面图中彼此一体化。在第一存取晶体管的有源区和衬底接触区之间的半导体衬底上形成伪栅电极。虚拟栅电极与衬底接触区域的P型杂质区电连接。

5. 发明授权

US09359390B2 Activated carbon and use therefor 有权
标题翻译：活性炭用于此
公开(公告)号：US09359390B2
公开(公告)日：2016-06-07
申请号：US13637250
申请日：2011-03-24
申请人： Mitsunori Hitomi , Takayuki Yoshikawa , Takayuki Yamada
发明人： Mitsunori Hitomi , Takayuki Yoshikawa , Takayuki Yamada
IPC分类号： C07F9/38 , B01J21/18 , C01B31/08 , B01J35/00
CPC分类号： C07F9/3813 , B01J21/18 , B01J35/002 , C01B32/30 , C07F9/3808
摘要： An activated carbon having a high catalytic activity as an oxidation catalyst or a decomposition catalyst, and use therefor are provided.The activated carbon has (a) an oxygen content in a range from 1.40 to 4.30% by mass, (b) a nitrogen content in a range from 0.90 to 2.30% by mass, (c) a sulfur content in a range from 0.50 to 1.20% by mass, and (d) a hydrogen content in a range from 0.40 to 0.65% by mass. The activated carbon may have at least one characteristic of (e) an amount of an acidic surface functional group of 0.10 to 0.36 meq/g, (f) an amount of a basic surface functional group of 0.50 to 1.30 meq/g, and (g) a benzene adsorption capacity of 25 to 50%. The activated carbon catalyzes an oxidation reaction of N-(phosphonomethyl)iminodiacetic acid with a peroxide (e.g., hydrogen peroxide) and achieves an efficient production of N-(phosphonomethyl)glycine even after repetitive use. The activated carbon also efficiently decomposes a chloramine.
摘要翻译：提供了作为氧化催化剂或分解催化剂具有高催化活性的活性炭及其用途。活性炭具有（a）1.40〜4.30质量％的氧含量，（b）氮含量在0.90〜2.30质量％的范围内，（c）硫含量在0.50〜 1.20质量％，（d）氢含量在0.40〜0.65质量％的范围内。活性炭可以具有以下特征：（e）酸性表面官能团的量为0.10〜0.36meq / g，（f）碱性表面官能团的量为0.50〜1.30meq / g，（ g）苯吸附量为25〜50％。活性炭催化N-（膦酰基甲基）亚氨基二乙酸与过氧化物（例如过氧化氢）的氧化反应，甚至在重复使用后即可有效生产N-（膦酰基甲基）甘氨酸。活性炭也有效地分解氯胺。

6. 发明授权

US08740290B2 Structure for side section of vehicle body 有权
标题翻译：车体侧面结构
公开(公告)号：US08740290B2
公开(公告)日：2014-06-03
申请号：US13576231
申请日：2010-12-24
申请人： Yusuke Takayama , Hitoshi Mizohata , Takayuki Yamada , Kazunori Hida , Yasunori Watanabe
发明人： Yusuke Takayama , Hitoshi Mizohata , Takayuki Yamada , Kazunori Hida , Yasunori Watanabe
IPC分类号： B62D25/02 , B62D25/04
CPC分类号： B62D25/02 , B62D25/025 , B62D25/04 , B62D25/2081 , B62D29/007
摘要： A vehicle body side part structure having high strength against a load in a frontal collision and a load in a side collision. A side panel outer member (14) is provided with a front pillar lower section (31) which is formed from a high-tensile steel sheet, a front pillar upper section (37a) which is formed from a normal steel sheet, and a reinforcement member (38) which is disposed along the front pillar upper section. The upper end (31a) of the front pillar lower section (31) is joined to the inner surface of the lower end (37c) of the front pillar upper section. The front end (38a) of the reinforcement member (38) is joined to the inner surface of the upper end (31a) of the front pillar lower section.
摘要翻译：一种车身侧部结构，其具有相对于前方碰撞中的载荷和侧面碰撞中的载荷的高强度。侧板外部构件（14）设置有由高强度钢板形成的前柱下部（31），由普通钢板形成的前柱上部（37a）和钢筋构件（38），其沿着前柱上部设置。前柱下部（31）的上端（31a）与前柱上部的下端（37c）的内表面接合。加强构件（38）的前端（38a）与前柱下部的上端（31a）的内表面接合。

7. 发明授权

US08679336B2 Microchannel device, separation apparatus, and separation method 有权
标题翻译：微通道装置，分离装置和分离方法
公开(公告)号：US08679336B2
公开(公告)日：2014-03-25
申请号：US12422528
申请日：2009-04-13
申请人： Kazuya Hongo , Takayuki Yamada , Seiichi Takagi , Hiroshi Kojima , Masaki Hirota , Kazuaki Tabata , Tetsuo Ohta
发明人： Kazuya Hongo , Takayuki Yamada , Seiichi Takagi , Hiroshi Kojima , Masaki Hirota , Kazuaki Tabata , Tetsuo Ohta
IPC分类号： B01D63/08 , B01D61/18 , G05B7/04
CPC分类号： B01D63/082 , B01D69/10 , B01D71/022 , B01D2313/086 , B01D2325/021 , B01L3/502753 , B33Y80/00 , Y10T137/2224
摘要： A microchannel device is provided, the microchannel device containing a microfluidic channel including a sub fluidic channel in which at least one filtration diaphragm is provided, wherein the microfluidic channel has at least a supply port, a first discharge port and a second discharge port, the supply port and the first discharge port are connected through the filtration diaphragm, the supply port and the second discharge port are connected without the filtration diaphragm, and the filtration diaphragm is provided parallel to a fluidic channel direction of the microfluidic channel.
摘要翻译：提供了一种微通道装置，所述微通道装置包含微流体通道，所述微流体通道包括其中设置有至少一个过滤隔膜的副流体通道，其中所述微流体通道至少具有供给口，第一排出口和第二排出口，供给口和第一排出口通过过滤膜连接，供给口和第二排出口连接而不需要过滤隔膜，并且过滤隔膜平行于微流体通道的流体通道方向设置。

8. 发明授权

US08507145B2 Fuel cell and method of producing the fuel cell 有权
标题翻译：燃料电池及燃料电池的制造方法
公开(公告)号：US08507145B2
公开(公告)日：2013-08-13
申请号：US12191023
申请日：2008-08-13
申请人： Mari Maruyama , Takayuki Yamada
发明人： Mari Maruyama , Takayuki Yamada
IPC分类号： H01M2/38
CPC分类号： H01M8/0206 , H01M8/0228 , H01M8/0247 , H01M8/0258 , H01M8/241 , H01M8/2425 , H01M8/2457 , H01M8/2483 , H01M8/249 , H01M2008/1293 , Y10T29/49115
摘要： A fuel cell includes an electrolyte electrode assembly and separators. A first protection layer is formed on a surface of an anode of the electrolyte electrode assembly facing the separator for preventing the anode from being exposed to an exhaust gas. A second protection layer is formed on a surface of the separator facing the anode for preventing the separator from being exposed to the exhaust gas. The first protection layer and the second protection layer tightly contact each other in part so as to form a space as a fuel gas channel for supplying a fuel gas to the anode. Alternatively, a protection layer is formed on an end surface of the separator facing the anode for preventing the separator from being exposed to the exhaust gas.
摘要翻译：燃料电池包括电解质电极组件和分离器。第一保护层形成在面向隔板的电解质电极组件的阳极的表面上，以防止阳极暴露于废气。在面向阳极的隔板的表面上形成第二保护层，以防止隔板暴露于废气。第一保护层和第二保护层部分地彼此紧密接触，以便形成用于将燃料气体供应到阳极的燃料气体通道的空间。或者，在面向阳极的隔板的端面上形成保护层，以防止隔板暴露于废气。

9. 发明授权

US08505664B2 Snowmobile 有权
标题翻译：雪地车
公开(公告)号：US08505664B2
公开(公告)日：2013-08-13
申请号：US13585872
申请日：2012-08-15
申请人： Tokinari Nagao , Atsushi Sawabuchi , Takashi Ashida , Kazuhiro Ishizawa , Takayuki Yamada
发明人： Tokinari Nagao , Atsushi Sawabuchi , Takashi Ashida , Kazuhiro Ishizawa , Takayuki Yamada
IPC分类号： B62M29/00
CPC分类号： B62M27/02
摘要： A snowmobile includes a throttle motor that is protected from brake dust. The snowmobile includes a snowmobile body including an engine room therein, an engine disposed inside the engine room, brake equipment disposed inside the engine room, a throttle valve arranged to adjust intake air supplied to the engine, and a throttle motor which is disposed at a more forward position than the brake equipment inside the engine room and arranged to drive the throttle valve.
摘要翻译：雪地车包括防止制动器灰尘的节气门马达。雪地车包括其中包括发动机室的雪地车身，设置在发动机室内部的发动机，设置在发动机室内部的制动装置，设置成调节供给发动机的进气的节流阀和设置在发动机室内的节流马达，比起发动机室内的制动装置更前进的位置，并且设置成驱动节流阀。

10. 发明授权

US08476680B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08476680B2
公开(公告)日：2013-07-02
申请号：US13029556
申请日：2011-02-17
申请人： Takayuki Yamada
发明人： Takayuki Yamada
IPC分类号： H01L29/76
CPC分类号： H01L21/76897 , H01L29/665 , H01L29/6653 , H01L29/6656
摘要： A semiconductor device includes: a semiconductor substrate; a gate electrode formed on the semiconductor substrate with a gate insulating film interposed therebetween; a side wall spacer formed on a side wall of the gate electrode; source/drain regions formed in opposing portions of the semiconductor substrate with the gate electrode and the side wall spacer interposed therebetween; and a stress-applying insulating film covering the gate electrode, the side wall spacer, and an upper surface of the semiconductor substrate. A gate-length-direction thickness of an upper portion of the side wall spacer is at least larger than a gate-length-direction thickness of a middle portion thereof.
摘要翻译：半导体器件包括：半导体衬底; 形成在半导体衬底上的栅电极，其间插入有栅极绝缘膜; 形成在所述栅电极的侧壁上的侧壁间隔物; 源极/漏极区域形成在半导体衬底的相对部分中，栅电极和侧壁间隔物插入其间; 以及覆盖所述栅电极，所述侧壁间隔物和所述半导体衬底的上表面的应力施加绝缘膜。侧壁间隔件的上部的栅长方向厚度至少大于其中间部分的栅极长度方向厚度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式