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    • 5. 发明授权
    • Activated carbon and use therefor
    • 活性炭用于此
    • US09359390B2
    • 2016-06-07
    • US13637250
    • 2011-03-24
    • Mitsunori HitomiTakayuki YoshikawaTakayuki Yamada
    • Mitsunori HitomiTakayuki YoshikawaTakayuki Yamada
    • C07F9/38B01J21/18C01B31/08B01J35/00
    • C07F9/3813B01J21/18B01J35/002C01B32/30C07F9/3808
    • An activated carbon having a high catalytic activity as an oxidation catalyst or a decomposition catalyst, and use therefor are provided.The activated carbon has (a) an oxygen content in a range from 1.40 to 4.30% by mass, (b) a nitrogen content in a range from 0.90 to 2.30% by mass, (c) a sulfur content in a range from 0.50 to 1.20% by mass, and (d) a hydrogen content in a range from 0.40 to 0.65% by mass. The activated carbon may have at least one characteristic of (e) an amount of an acidic surface functional group of 0.10 to 0.36 meq/g, (f) an amount of a basic surface functional group of 0.50 to 1.30 meq/g, and (g) a benzene adsorption capacity of 25 to 50%. The activated carbon catalyzes an oxidation reaction of N-(phosphonomethyl)iminodiacetic acid with a peroxide (e.g., hydrogen peroxide) and achieves an efficient production of N-(phosphonomethyl)glycine even after repetitive use. The activated carbon also efficiently decomposes a chloramine.
    • 提供了作为氧化催化剂或分解催化剂具有高催化活性的活性炭及其用途。 活性炭具有(a)1.40〜4.30质量%的氧含量,(b)氮含量在0.90〜2.30质量%的范围内,(c)硫含量在0.50〜 1.20质量%,(d)氢含量在0.40〜0.65质量%的范围内。 活性炭可以具有以下特征:(e)酸性表面官能团的量为0.10〜0.36meq / g,(f)碱性表面官能团的量为0.50〜1.30meq / g,( g)苯吸附量为25〜50%。 活性炭催化N-(膦酰基甲基)亚氨基二乙酸与过氧化物(例如过氧化氢)的氧化反应,甚至在重复使用后即可有效生产N-(膦酰基甲基)甘氨酸。 活性炭也有效地分解氯胺。
    • 10. 发明授权
    • Semiconductor device and method for manufacturing the same
    • 半导体装置及其制造方法
    • US08476680B2
    • 2013-07-02
    • US13029556
    • 2011-02-17
    • Takayuki Yamada
    • Takayuki Yamada
    • H01L29/76
    • H01L21/76897H01L29/665H01L29/6653H01L29/6656
    • A semiconductor device includes: a semiconductor substrate; a gate electrode formed on the semiconductor substrate with a gate insulating film interposed therebetween; a side wall spacer formed on a side wall of the gate electrode; source/drain regions formed in opposing portions of the semiconductor substrate with the gate electrode and the side wall spacer interposed therebetween; and a stress-applying insulating film covering the gate electrode, the side wall spacer, and an upper surface of the semiconductor substrate. A gate-length-direction thickness of an upper portion of the side wall spacer is at least larger than a gate-length-direction thickness of a middle portion thereof.
    • 半导体器件包括:半导体衬底; 形成在半导体衬底上的栅电极,其间插入有栅极绝缘膜; 形成在所述栅电极的侧壁上的侧壁间隔物; 源极/漏极区域形成在半导体衬底的相对部分中,栅电极和侧壁间隔物插入其间; 以及覆盖所述栅电极,所述侧壁间隔物和所述半导体衬底的上表面的应力施加绝缘膜。 侧壁间隔件的上部的栅长方向厚度至少大于其中间部分的栅极长度方向厚度。