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1. 发明授权

US08540220B2 Air spring for vehicle and railway truck for vehicle 有权
标题翻译：汽车和铁路车辆用空气弹簧
公开(公告)号：US08540220B2
公开(公告)日：2013-09-24
申请号：US13133079
申请日：2010-06-30
申请人： Takayuki Sawa , Hideki Kitada , Toshihisa Adachi , Hirokazu Haraguchi
发明人： Takayuki Sawa , Hideki Kitada , Toshihisa Adachi , Hirokazu Haraguchi
IPC分类号： F16F9/05
CPC分类号： F16F9/04 , B61F5/10 , F16F1/40 , F16F3/10 , F16F9/0454 , F16F2230/0052
摘要： The invention offers an air spring for obtaining a vehicle that renders good comfortableness even at the time of the curved-track running. The air spring for a vehicle has an upper board, a lower board, a diaphragm, and a stopper rubber placed between the lower board and a lower plate. The air spring is provided with a mechanism for restraining the displacement of the stopper rubber, the mechanism having a first restraining member placed on either one of the lower plate and the lower board and a second restraining member placed on the other. The shape of restraining wall surfaces is formed such that in the relative positional relationship between the first and second restraining members, when the first or second restraining member displaces itself such that it delineates an arc by placing the center at the railway truck axis of the railway truck of a vehicle, the spacings between the first and second restraining members at the left side and right side are equal to each other or decrease as the amount of displacement along the arc increases.
摘要翻译：本发明提供一种用于获得车辆的空气弹簧，即使在弯曲轨道行驶时也能提供良好的舒适性。用于车辆的空气弹簧具有放置在下板和下板之间的上板，下板，隔膜和止动橡胶。空气弹簧设置有用于限制止动橡胶的位移的机构，该机构具有放置在下板和下板中的任一个上的第一限制构件和彼此放置的第二限制构件。限制壁面的形状形成为使得在第一和第二限制构件的相对位置关系中，当第一或第二限制构件移位时，使其通过将中心放置在铁路的铁路车辆轴线处而形成弧线车辆的卡车，第一和第二限制件在左侧和右侧的间隔彼此相等或随着沿着电弧的位移量的增加而减小。

2. 发明申请

US20110233832A1 AIR SPRING FOR VEHICLE AND RAILWAY TRUCK FOR VEHICLE 有权
标题翻译：用于车辆的汽车和铁路卡车的空气弹簧
公开(公告)号：US20110233832A1
公开(公告)日：2011-09-29
申请号：US13133079
申请日：2010-06-30
申请人： Takayuki Sawa , Hideki Kitada , Toshihisa Adachi , Hirokazu Haraguchi
发明人： Takayuki Sawa , Hideki Kitada , Toshihisa Adachi , Hirokazu Haraguchi
IPC分类号： F16F9/05 , B61F5/10 , F16F15/023
CPC分类号： F16F9/04 , B61F5/10 , F16F1/40 , F16F3/10 , F16F9/0454 , F16F2230/0052
摘要： The invention offers an air spring for obtaining a vehicle that renders good comfortableness even at the time of the curved-track running. The air spring for a vehicle has an upper board, a lower board, a diaphragm, and a stopper rubber placed between the lower board and a lower plate. The air spring is provided with a mechanism for restraining the displacement of the stopper rubber, the mechanism having a first restraining member placed on either one of the lower plate and the lower board and a second restraining member placed on the other. The shape of restraining wall surfaces is formed such that in the relative positional relationship between the first and second restraining members, when the first or second restraining member displaces itself such that it delineates an arc by placing the center at the railway truck axis of the railway truck of a vehicle, the spacings between the first and second restraining members at the left side and right side are equal to each other or decrease as the amount of displacement along the arc increases.
摘要翻译：本发明提供一种用于获得车辆的空气弹簧，即使在弯曲轨道行驶时也能提供良好的舒适性。用于车辆的空气弹簧具有放置在下板和下板之间的上板，下板，隔膜和止动橡胶。空气弹簧设置有用于限制止动橡胶的位移的机构，该机构具有放置在下板和下板中的任一个上的第一限制构件和彼此放置的第二限制构件。限制壁面的形状形成为使得在第一和第二限制构件的相对位置关系中，当第一或第二限制构件移位时，使其通过将中心放置在铁路的铁路车辆轴线处而形成弧线车辆的卡车，第一和第二限制件在左侧和右侧的间隔彼此相等或随着沿着电弧的位移量的增加而减小。

3. 发明申请

US20070161242A1 Semiconductor device having copper wiring 有权
标题翻译：具有铜线的半导体器件
公开(公告)号：US20070161242A1
公开(公告)日：2007-07-12
申请号：US11714886
申请日：2007-03-07
申请人： Yumiko Koura , Hideki Kitada
发明人： Yumiko Koura , Hideki Kitada
IPC分类号： H01L21/44
CPC分类号： H01L21/76877 , H01L21/2885 , H01L23/53228 , H01L2924/0002 , H01L2924/00
摘要： A first interlayer insulating film made of insulting material is formed over an underlying substrate. A via hole is formed through the first interlayer insulating film. A conductive plug made of copper or alloy mainly consisting of copper is filled in the via hole. A second interlayer insulating film made of insulating material is formed over the first interlayer insulating film. A wiring groove is formed in the second interlayer insulating film, passing over the conductive plug and exposing the upper surface of the conductive plug. A wiring made of copper or alloy mainly consisting of copper is filled in the wiring groove. The total atom concentration of carbon, oxygen, nitrogen, sulfur and chlorine in the conductive plug is lower than the total atom concentration of carbon, oxygen, nitrogen, sulfur and chlorine in the wiring.
摘要翻译：由绝缘材料制成的第一层间绝缘膜形成在下面的衬底上。通过第一层间绝缘膜形成通孔。由铜或主要由铜组成的合金制成的导电插塞填充在通孔中。在第一层间绝缘膜上形成由绝缘材料制成的第二层间绝缘膜。在第二层间绝缘膜中形成布线槽，穿过导电塞并暴露导电塞的上表面。由铜或合金主要由铜构成的布线填充在布线槽中。导电插塞中碳，氧，氮，硫和氯的总原子浓度低于布线中碳，氧，氮，硫和氯的总原子浓度。

4. 发明授权

US07205667B2 Semiconductor device having copper wiring 有权
公开(公告)号：US07205667B2
公开(公告)日：2007-04-17
申请号：US10995082
申请日：2004-11-23
申请人： Yumiko Koura , Hideki Kitada
发明人： Yumiko Koura , Hideki Kitada
IPC分类号： H01L23/522
CPC分类号： H01L21/76877 , H01L21/2885 , H01L23/53228 , H01L2924/0002 , H01L2924/00
摘要： A first interlayer insulating film made of insulting material is formed over an underlying substrate. A via hole is formed through the first interlayer insulating film. A conductive plug made of copper or alloy mainly consisting of copper is filled in the via hole. A second interlayer insulating film made of insulating material is formed over the first interlayer insulating film. A wiring groove is formed in the second interlayer insulating film, passing over the conductive plug and exposing the upper surface of the conductive plug. A wiring made of copper or alloy mainly consisting of copper is filled in the wiring groove. The total atom concentration of carbon, oxygen, nitrogen, sulfur and chlorine in the conductive plug is lower than the total atom concentration of carbon, oxygen, nitrogen, sulfur and chlorine in the wiring.

5. 发明申请

US20070048931A1 Semiconductor device and its manufacture method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20070048931A1
公开(公告)日：2007-03-01
申请号：US11318530
申请日：2005-12-28
申请人： Noriyoshi Shimizu , Nobuyuki Ohtsuka , Hideki Kitada , Yoshiyuki Nakao
发明人： Noriyoshi Shimizu , Nobuyuki Ohtsuka , Hideki Kitada , Yoshiyuki Nakao
IPC分类号： H01L21/8242
CPC分类号： H01L21/76843 , H01L21/28556 , H01L21/76831 , H01L21/76844 , H01L21/76855 , H01L21/76864 , H01L21/76867 , H01L21/76873 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： (a1) A concave portion is formed in an interlayer insulating film formed on a semiconductor substrate. (a2) A first film of Mn is formed by CVD, the first film covering the inner surface of the concave portion and the upper surface of the insulating film. (a3) Conductive material essentially consisting of Cu is deposited on the first film to embed the conductive material in the concave portion. (a4) The semiconductor substrate is annealed. During the period until a barrier layer is formed having also a function of improving tight adhesion, it is possible to ensure sufficient tight adhesion of wiring members and prevent peel-off of the wiring members.
摘要翻译：（a1）在半导体基板上形成的层间绝缘膜中形成有凹部。（a2）通过CVD形成Mn的第一膜，所述第一膜覆盖所述凹部的内表面和所述绝缘膜的上表面。（a3）基本上由Cu组成的导电材料沉积在第一膜上，以将导电材料嵌入凹部中。（a4）半导体衬底退火。在形成阻挡层的同时具有提高紧密粘合性的功能的期间，能够确保布线部件的充分的密合性，防止配线部件的剥离。

6. 发明授权

US06242808B1 Semiconductor device with copper wiring and semiconductor device manufacturing method 有权
标题翻译：具有铜布线和半导体器件制造方法的半导体器件
公开(公告)号：US06242808B1
公开(公告)日：2001-06-05
申请号：US09167540
申请日：1998-10-07
申请人： Noriyoshi Shimizu , Hideki Kitada , Nobuyuki Ohtsuka
发明人： Noriyoshi Shimizu , Hideki Kitada , Nobuyuki Ohtsuka
IPC分类号： H01L2348
CPC分类号： H01L21/76874 , H01L21/76843 , H01L21/76864 , H01L21/76873 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： An interlayer insulation film is deposited on a substrate in which a semiconductor element has been formed. A wiring groove is formed in the interlayer insulation film. A barrier layer, made of a material which prevents the diffusion of Cu atoms, is formed on at least the inner surface of the wring groove and the upper surface of the interlayer insulation film. A seed layer, made of Cu which contains an impurity, -is deposited on the barrier layer. By way of plating, a conductive layer made of Cu is deposited on the seed layer so as to fill the wiring groove. The substrate is heated to precipitate the impurity, contained in the seed layer, on at least an interface between the seed layer and the barrier layer. The conductive layer, the seed layer and the barrier layer are removed until the upper surface of the interlayer insulation film appears, thus performing surface planarization. A method for forming a Cu wiring whose adhesion to the underlying surface is high and whose electromigration resistance is excellent, is attained employing a plating process.
摘要翻译：在形成了半导体元件的基板上沉积层间绝缘膜。在层间绝缘膜中形成布线槽。至少形成在楔形槽的内表面和层间绝缘膜的上表面上的防止Cu原子扩散的材料的阻挡层。由阻挡层上沉积含有杂质的Cu构成的晶种层。通过电镀，在种子层上沉积由Cu制成的导电层以填充布线槽。衬底被加热以沉淀种子层中包含的杂质至少在种子层和阻挡层之间的界面上。去除导电层，种子层和阻挡层，直到层间绝缘膜的上表面出现，从而进行表面平坦化。使用电镀工艺可以获得形成对下面的表面的粘合性高且耐电迁移性优异的Cu布线的方法。

7. 发明授权

US4808642A Chlorine-containing resin molding and material for use therewith 失效
标题翻译：含氯树脂成型及其使用材料
公开(公告)号：US4808642A
公开(公告)日：1989-02-28
申请号：US856683
申请日：1986-04-25
申请人： Hideki Kitada , Masami Takahashi , Toshiyuki Yagi , Masaaki Sukeda , Tadashi Nakayama
发明人： Hideki Kitada , Masami Takahashi , Toshiyuki Yagi , Masaaki Sukeda , Tadashi Nakayama
IPC分类号： C08K5/1515 , C08K5/17 , C08L27/06 , C08L33/06 , C08L51/00 , C08K5/00 , C09D3/76
CPC分类号： C08K5/1515 , C08K5/175 , C08L27/06 , C08L33/06 , C08L51/00
摘要： This invention relates to a chlorine-containing resin molding characterized by its stabilization by aminocarboxylic acid and from which molding substantially no metallic ion is detected, and to material for use with the chlorine-containing resin molding consisting of 100 parts by weight of chlorine-containing resin and 0.5-5.0 parts by weight of aminocarbolyxic acid. According to the molding and the material for use therewith, there is no possibility of metallic ion dissolving from the molding in which a metallic stabilizer is conventionally used, with the result that the molding finds wide application in the industrial field related with electric parts including a semiconductor as a main item, medical treatment, chemicals and pharmaceuticals, and food stuffs, all subject to adverse effects by dissolution of metallic ion. Consideration for application of a nonmetallic agent is also given to the use of a coloring agent and a lubricant with respect to the molding and the material for use therewith.
摘要翻译：本发明涉及一种含氯树脂成型体，其特征在于其通过氨基羧酸的稳定化，并且从其中检测到基本上不含金属离子的成型体，以及与含氯树脂成型体一起使用的材料，其包含100重量份的含氯树脂和0.5-5.0重量份氨基二羧酸。根据成型体和与其一起使用的材料，通常使用金属稳定剂的成型体不会发生金属离子溶解，结果是在涉及电气部件的工业领域中广泛应用半导体作为主要项目，医疗，化学药品和食品，都受到金属离子溶解的不利影响。对于应用非金属剂的考虑也用于使用着色剂和润滑剂相对于模制品和与其一起使用的材料。

8. 发明授权

US08836122B2 Semiconductor device having copper wiring with increased migration resistance 有权
标题翻译：具有增加迁移电阻的铜布线的半导体器件
公开(公告)号：US08836122B2
公开(公告)日：2014-09-16
申请号：US12950554
申请日：2010-11-19
申请人： Hideki Kitada
发明人： Hideki Kitada
IPC分类号： H01L23/48 , H01L23/532 , H01L21/768 , H01L23/485
CPC分类号： H01L23/53238 , H01L21/76808 , H01L21/76877 , H01L21/76883 , H01L23/485 , H01L23/53233 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device has: a semiconductor substrate formed with a plurality of semiconductor elements, a plurality of interlevel insulating films laminated above the semiconductor substrate, including a first and a second interlevel insulating films adjacent to each other; a first wiring trench formed in the first interlevel insulating film; and a first damascene wiring including: a first barrier metal film having a diffusion preventive function, formed covering inner surface of the first wiring trench and defining a first main wiring trench; and a first main wiring layer filling the first main wiring trench, formed of first metal element, and added with second metal element having migration suppressing function, at spatially different concentration.
摘要翻译：半导体器件具有：形成有多个半导体元件的半导体衬底，层叠在半导体衬底上的多个层间绝缘膜，包括彼此相邻的第一和第二层间绝缘膜; 形成在第一层间绝缘膜中的第一布线沟槽; 以及第一镶嵌线，其包括：形成有覆盖所述第一布线沟槽的内表面并且限定第一主布线沟槽的具有扩散防止功能的第一阻挡金属膜; 以及第一主配线层，填充由第一金属元素形成的第一主布线沟槽，并且在空间不同的浓度下添加具有迁移抑制功能的第二金属元件。

9. 发明申请

US20130093092A1 ELECTRONIC DEVICE AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译：电子装置及其制造方法
公开(公告)号：US20130093092A1
公开(公告)日：2013-04-18
申请号：US13613167
申请日：2012-09-13
申请人： Tsuyoshi Kanki , Hideki Kitada
发明人： Tsuyoshi Kanki , Hideki Kitada
IPC分类号： H01L23/52 , H01L21/768
CPC分类号： H01L21/76883 , H01L21/7684 , H01L21/76849 , H01L21/7685 , H01L21/76877 , H01L23/5226 , H01L23/5283 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An electronic device includes: a first insulating film; an interconnection trench on a surface of the first insulating film; an interconnection pattern composed of Cu, the interconnection trench being filled with the interconnection pattern; a metal film on a surface of the interconnection pattern, the metal film having a higher elastic modulus than Cu; a second insulating film on the first insulating film; and a via plug composed of Cu and arranged in the second insulating film, the via plug being in contact with the metal film.
摘要翻译：电子设备包括：第一绝缘膜; 在所述第一绝缘膜的表面上的互连沟槽; 由Cu构成的互连图案，互连沟槽填充有互连图案; 在互连图案的表面上的金属膜，所述金属膜具有比Cu更高的弹性模量; 第一绝缘膜上的第二绝缘膜; 以及由Cu构成并布置在第二绝缘膜中的通孔塞，所述通孔插塞与金属膜接触。

10. 发明申请

US20110151662A1 MANUFACTURE METHOD FOR SEMICONDUCTOR DEVICE HAVING IMPROVED COPPER DIFFUSION PREVENTIVE FUNCTION OF PLUGS AND WIRINGS MADE OF COPPER OR COPPER ALLOY AND SEMICONDUCTOR DEVICE OF THIS KIND 有权
标题翻译：用于具有改进的铜扩散的铜电极的预制功能的半导体器件的制造方法和铜或铜合金和这种类型的半导体器件的布线
公开(公告)号：US20110151662A1
公开(公告)日：2011-06-23
申请号：US13036522
申请日：2011-02-28
申请人： Yumiko Koura , Hideki Kitada , Kiyoshi Ozawa
发明人： Yumiko Koura , Hideki Kitada , Kiyoshi Ozawa
IPC分类号： H01L21/768
CPC分类号： H01L23/53238 , H01L21/2885 , H01L21/76831 , H01L21/76843 , H01L21/76855 , H01L21/76858 , H01L21/76873 , H01L21/76877 , H01L23/5226 , H01L23/53295 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： (a) A copper alloy film containing at least two types of metal elements in addition to copper is formed on the surface of an insulator containing oxygen and formed on a semiconductor substrate. (b) A metal film made of pure copper or copper alloy is formed on the copper alloy film. (c) After the step (a) or (b), heat treatment is performed under the condition that a metal oxide film is formed on a surface of the insulator through reaction between the oxygen in the insulator and the metal elements in the copper alloy film.
摘要翻译：（a）在含氧的绝缘体的表面上形成含有铜以外的至少两种金属元素的铜合金膜，形成在半导体基板上。（b）在铜合金膜上形成由纯铜或铜合金制成的金属膜。（c）在步骤（a）或（b）之后，在通过绝缘体中的氧和铜合金中的金属之间的反应在绝缘体的表面上形成金属氧化物膜的条件下进行热处理电影。

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