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1. 发明申请

US20100007023A1 MANUFACTURE METHOD FOR SEMICONDUCTOR DEVICE HAVING IMPROVED COPPER DIFFUSION PREVENTIVE FUNCTION OF PLUGS AND WIRINGS MADE OF COPPER OR COPPER ALLOY 审中-公开
标题翻译：具有改进的铜扩散的铜扩散预防功能的半导体器件的制造方法和铜或铜合金的线
公开(公告)号：US20100007023A1
公开(公告)日：2010-01-14
申请号：US12562628
申请日：2009-09-18
申请人： Yumiko Koura , Hideki Kitada , Kiyoshi Ozawa
发明人： Yumiko Koura , Hideki Kitada , Kiyoshi Ozawa
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L23/53238 , H01L21/2885 , H01L21/76831 , H01L21/76843 , H01L21/76855 , H01L21/76858 , H01L21/76873 , H01L21/76877 , H01L23/5226 , H01L23/53295 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： (a) A copper alloy film containing at least two types of metal elements in addition to copper is formed on the surface of an insulator containing oxygen and formed on a semiconductor substrate. (b) A metal film made of pure copper or copper alloy is formed on the copper alloy film. (c) After the step (a) or (b), heat treatment is performed under the condition that a metal oxide film is formed on a surface of the insulator through reaction between the oxygen in the insulator and the metal elements in the copper alloy film.
摘要翻译：（a）在含氧的绝缘体的表面上形成含有铜以外的至少两种金属元素的铜合金膜，形成在半导体基板上。（b）在铜合金膜上形成由纯铜或铜合金制成的金属膜。（c）在步骤（a）或（b）之后，在通过绝缘体中的氧和铜合金中的金属之间的反应在绝缘体的表面上形成金属氧化物膜的条件下进行热处理电影。

2. 发明申请

US20110151662A1 MANUFACTURE METHOD FOR SEMICONDUCTOR DEVICE HAVING IMPROVED COPPER DIFFUSION PREVENTIVE FUNCTION OF PLUGS AND WIRINGS MADE OF COPPER OR COPPER ALLOY AND SEMICONDUCTOR DEVICE OF THIS KIND 有权
标题翻译：用于具有改进的铜扩散的铜电极的预制功能的半导体器件的制造方法和铜或铜合金和这种类型的半导体器件的布线
公开(公告)号：US20110151662A1
公开(公告)日：2011-06-23
申请号：US13036522
申请日：2011-02-28
申请人： Yumiko Koura , Hideki Kitada , Kiyoshi Ozawa
发明人： Yumiko Koura , Hideki Kitada , Kiyoshi Ozawa
IPC分类号： H01L21/768
CPC分类号： H01L23/53238 , H01L21/2885 , H01L21/76831 , H01L21/76843 , H01L21/76855 , H01L21/76858 , H01L21/76873 , H01L21/76877 , H01L23/5226 , H01L23/53295 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： (a) A copper alloy film containing at least two types of metal elements in addition to copper is formed on the surface of an insulator containing oxygen and formed on a semiconductor substrate. (b) A metal film made of pure copper or copper alloy is formed on the copper alloy film. (c) After the step (a) or (b), heat treatment is performed under the condition that a metal oxide film is formed on a surface of the insulator through reaction between the oxygen in the insulator and the metal elements in the copper alloy film.
摘要翻译：（a）在含氧的绝缘体的表面上形成含有铜以外的至少两种金属元素的铜合金膜，形成在半导体基板上。（b）在铜合金膜上形成由纯铜或铜合金制成的金属膜。（c）在步骤（a）或（b）之后，在通过绝缘体中的氧和铜合金中的金属之间的反应在绝缘体的表面上形成金属氧化物膜的条件下进行热处理电影。

3. 发明授权

US07611984B2 Manufacture method for semiconductor device having improved copper diffusion preventive function of plugs and wirings made of copper or copper alloy 有权
标题翻译：具有铜或铜合金插头和布线的铜扩散防止功能的半导体器件的制造方法
公开(公告)号：US07611984B2
公开(公告)日：2009-11-03
申请号：US11249442
申请日：2005-10-14
申请人： Yumiko Koura , Hideki Kitada , Kiyoshi Ozawa
发明人： Yumiko Koura , Hideki Kitada , Kiyoshi Ozawa
IPC分类号： H01L20/4763
CPC分类号： H01L23/53238 , H01L21/2885 , H01L21/76831 , H01L21/76843 , H01L21/76855 , H01L21/76858 , H01L21/76873 , H01L21/76877 , H01L23/5226 , H01L23/53295 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： (a) A copper alloy film containing at least two types of metal elements in addition to copper is formed on the surface of an insulator containing oxygen and formed on a semiconductor substrate. (b) A metal film made of pure copper or copper alloy is formed on the copper alloy film. (c) After the step (a) or (b), heat treatment is performed under the condition that a metal oxide film is formed on a surface of the insulator through reaction between the oxygen in the insulator and the metal elements in the copper alloy film.
摘要翻译：（a）在含氧的绝缘体的表面上形成含有铜以外的至少两种金属元素的铜合金膜，形成在半导体基板上。（b）在铜合金膜上形成由纯铜或铜合金制成的金属膜。（c）在步骤（a）或（b）之后，在通过绝缘体中的氧和铜合金中的金属之间的反应在绝缘体的表面上形成金属氧化物膜的条件下进行热处理电影。

4. 发明授权

US08383509B2 Manufacture method for semiconductor device having improved copper diffusion preventive function of plugs and wirings made of copper or copper alloy and semiconductor device of this kind 有权
标题翻译：具有由铜或铜合金制成的插头和布线的铜扩散防止功能以及这种半导体器件的半导体器件的制造方法
公开(公告)号：US08383509B2
公开(公告)日：2013-02-26
申请号：US13036522
申请日：2011-02-28
申请人： Yumiko Koura , Hideki Kitada , Kiyoshi Ozawa
发明人： Yumiko Koura , Hideki Kitada , Kiyoshi Ozawa
IPC分类号： H01L21/4763
CPC分类号： H01L23/53238 , H01L21/2885 , H01L21/76831 , H01L21/76843 , H01L21/76855 , H01L21/76858 , H01L21/76873 , H01L21/76877 , H01L23/5226 , H01L23/53295 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： (a) A copper alloy film containing at least two types of metal elements in addition to copper is formed on the surface of an insulator containing oxygen and formed on a semiconductor substrate. (b) A metal film made of pure copper or copper alloy is formed on the copper alloy film. (c) After the step (a) or (b), heat treatment is performed under the condition that a metal oxide film is formed on a surface of the insulator through reaction between the oxygen in the insulator and the metal elements in the copper alloy film.
摘要翻译：（a）在含氧的绝缘体的表面上形成含有铜以外的至少两种金属元素的铜合金膜，形成在半导体基板上。（b）在铜合金膜上形成由纯铜或铜合金制成的金属膜。（c）在步骤（a）或（b）之后，在通过绝缘体中的氧和铜合金中的金属之间的反应在绝缘体的表面上形成金属氧化物膜的条件下进行热处理电影。

5. 发明申请

US20070020931A1 Manufacture method for semiconductor device having improved copper diffusion preventive function of plugs and wirings made of copper or copper alloy and semiconductor device of this kind 有权
标题翻译：具有由铜或铜合金制成的插头和布线的铜扩散防止功能以及这种半导体器件的半导体器件的制造方法
公开(公告)号：US20070020931A1
公开(公告)日：2007-01-25
申请号：US11249442
申请日：2005-10-14
申请人： Yumiko Koura , Hideki Kitada , Kiyoshi Ozawa
发明人： Yumiko Koura , Hideki Kitada , Kiyoshi Ozawa
IPC分类号： H01L21/44
CPC分类号： H01L23/53238 , H01L21/2885 , H01L21/76831 , H01L21/76843 , H01L21/76855 , H01L21/76858 , H01L21/76873 , H01L21/76877 , H01L23/5226 , H01L23/53295 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： (a) A copper alloy film containing at least two types of metal elements in addition to copper is formed on the surface of an insulator containing oxygen and formed on a semiconductor substrate. (b) A metal film made of pure copper or copper alloy is formed on the copper alloy film. (c) After the step (a) or (b), heat treatment is performed under the condition that a metal oxide film is formed on a surface of the insulator through reaction between the oxygen in the insulator and the metal elements in the copper alloy film.
摘要翻译：（a）在含氧的绝缘体的表面上形成含有铜以外的至少两种金属元素的铜合金膜，形成在半导体基板上。（b）在铜合金膜上形成由纯铜或铜合金制成的金属膜。（c）在步骤（a）或（b）之后，在通过绝缘体中的氧和铜合金中的金属之间的反应在绝缘体的表面上形成金属氧化物膜的条件下进行热处理电影。

6. 发明申请

US20070161242A1 Semiconductor device having copper wiring 有权
标题翻译：具有铜线的半导体器件
公开(公告)号：US20070161242A1
公开(公告)日：2007-07-12
申请号：US11714886
申请日：2007-03-07
申请人： Yumiko Koura , Hideki Kitada
发明人： Yumiko Koura , Hideki Kitada
IPC分类号： H01L21/44
CPC分类号： H01L21/76877 , H01L21/2885 , H01L23/53228 , H01L2924/0002 , H01L2924/00
摘要： A first interlayer insulating film made of insulting material is formed over an underlying substrate. A via hole is formed through the first interlayer insulating film. A conductive plug made of copper or alloy mainly consisting of copper is filled in the via hole. A second interlayer insulating film made of insulating material is formed over the first interlayer insulating film. A wiring groove is formed in the second interlayer insulating film, passing over the conductive plug and exposing the upper surface of the conductive plug. A wiring made of copper or alloy mainly consisting of copper is filled in the wiring groove. The total atom concentration of carbon, oxygen, nitrogen, sulfur and chlorine in the conductive plug is lower than the total atom concentration of carbon, oxygen, nitrogen, sulfur and chlorine in the wiring.
摘要翻译：由绝缘材料制成的第一层间绝缘膜形成在下面的衬底上。通过第一层间绝缘膜形成通孔。由铜或主要由铜组成的合金制成的导电插塞填充在通孔中。在第一层间绝缘膜上形成由绝缘材料制成的第二层间绝缘膜。在第二层间绝缘膜中形成布线槽，穿过导电塞并暴露导电塞的上表面。由铜或合金主要由铜构成的布线填充在布线槽中。导电插塞中碳，氧，氮，硫和氯的总原子浓度低于布线中碳，氧，氮，硫和氯的总原子浓度。

7. 发明授权

US07205667B2 Semiconductor device having copper wiring 有权
公开(公告)号：US07205667B2
公开(公告)日：2007-04-17
申请号：US10995082
申请日：2004-11-23
申请人： Yumiko Koura , Hideki Kitada
发明人： Yumiko Koura , Hideki Kitada
IPC分类号： H01L23/522
CPC分类号： H01L21/76877 , H01L21/2885 , H01L23/53228 , H01L2924/0002 , H01L2924/00
摘要： A first interlayer insulating film made of insulting material is formed over an underlying substrate. A via hole is formed through the first interlayer insulating film. A conductive plug made of copper or alloy mainly consisting of copper is filled in the via hole. A second interlayer insulating film made of insulating material is formed over the first interlayer insulating film. A wiring groove is formed in the second interlayer insulating film, passing over the conductive plug and exposing the upper surface of the conductive plug. A wiring made of copper or alloy mainly consisting of copper is filled in the wiring groove. The total atom concentration of carbon, oxygen, nitrogen, sulfur and chlorine in the conductive plug is lower than the total atom concentration of carbon, oxygen, nitrogen, sulfur and chlorine in the wiring.

8. 发明授权

US07871924B2 Semiconductor device having copper wiring 有权
标题翻译：具有铜线的半导体器件
公开(公告)号：US07871924B2
公开(公告)日：2011-01-18
申请号：US11714886
申请日：2007-03-07
申请人： Yumiko Koura , Hideki Kitada
发明人： Yumiko Koura , Hideki Kitada
IPC分类号： H01L21/4763
CPC分类号： H01L21/76877 , H01L21/2885 , H01L23/53228 , H01L2924/0002 , H01L2924/00
摘要： A first interlayer insulating film made of insulting material is formed over an underlying substrate. A via hole is formed through the first interlayer insulating film. A conductive plug made of copper or alloy mainly consisting of copper is filled in the via hole. A second interlayer insulating film made of insulating material is formed over the first interlayer insulating film. A wiring groove is formed in the second interlayer insulating film, passing over the conductive plug and exposing the upper surface of the conductive plug. A wiring made of copper or alloy mainly consisting of copper is filled in the wiring groove. The total atom concentration of carbon, oxygen, nitrogen, sulfur and chlorine in the conductive plug is lower than the total atom concentration of carbon, oxygen, nitrogen, sulfur and chlorine in the wiring.
摘要翻译：由绝缘材料制成的第一层间绝缘膜形成在下面的衬底上。通过第一层间绝缘膜形成通孔。由铜或主要由铜组成的合金制成的导电插塞填充在通孔中。在第一层间绝缘膜上形成由绝缘材料制成的第二层间绝缘膜。在第二层间绝缘膜中形成布线槽，穿过导电塞并暴露导电塞的上表面。由铜或合金主要由铜构成的布线填充在布线槽中。导电插塞中碳，氧，氮，硫和氯的总原子浓度低于布线中碳，氧，氮，硫和氯的总原子浓度。

9. 发明申请

US20060012046A1 Semiconductor device having copper wiring and its manufacture method 有权
标题翻译：具有铜线的半导体器件及其制造方法
公开(公告)号：US20060012046A1
公开(公告)日：2006-01-19
申请号：US10995082
申请日：2004-11-23
申请人： Yumiko Koura , Hideki Kitada
发明人： Yumiko Koura , Hideki Kitada
IPC分类号： H01L23/52
CPC分类号： H01L21/76877 , H01L21/2885 , H01L23/53228 , H01L2924/0002 , H01L2924/00
摘要： A first interlayer insulating film made of insulting material is formed over an underlying substrate. A via hole is formed through the first interlayer insulating film. A conductive plug made of copper or alloy mainly consisting of copper is filled in the via hole. A second interlayer insulating film made of insulating material is formed over the first interlayer insulating film. A wiring groove is formed in the second interlayer insulating film, passing over the conductive plug and exposing the upper surface of the conductive plug. A wiring made of copper or alloy mainly consisting of copper is filled in the wiring groove. The total atom concentration of carbon, oxygen, nitrogen, sulfur and chlorine in the conductive plug is lower than the total atom concentration of carbon, oxygen, nitrogen, sulfur and chlorine in the wiring.
摘要翻译：由绝缘材料制成的第一层间绝缘膜形成在下面的衬底上。通过第一层间绝缘膜形成通孔。由铜或主要由铜组成的合金制成的导电插塞填充在通孔中。在第一层间绝缘膜上形成由绝缘材料制成的第二层间绝缘膜。在第二层间绝缘膜中形成布线槽，穿过导电塞并暴露导电塞的上表面。由铜或合金主要由铜构成的布线填充在布线槽中。导电插塞中碳，氧，氮，硫和氯的总原子浓度低于布线中碳，氧，氮，硫和氯的总原子浓度。

10. 发明申请

US20070048931A1 Semiconductor device and its manufacture method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20070048931A1
公开(公告)日：2007-03-01
申请号：US11318530
申请日：2005-12-28
申请人： Noriyoshi Shimizu , Nobuyuki Ohtsuka , Hideki Kitada , Yoshiyuki Nakao
发明人： Noriyoshi Shimizu , Nobuyuki Ohtsuka , Hideki Kitada , Yoshiyuki Nakao
IPC分类号： H01L21/8242
CPC分类号： H01L21/76843 , H01L21/28556 , H01L21/76831 , H01L21/76844 , H01L21/76855 , H01L21/76864 , H01L21/76867 , H01L21/76873 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： (a1) A concave portion is formed in an interlayer insulating film formed on a semiconductor substrate. (a2) A first film of Mn is formed by CVD, the first film covering the inner surface of the concave portion and the upper surface of the insulating film. (a3) Conductive material essentially consisting of Cu is deposited on the first film to embed the conductive material in the concave portion. (a4) The semiconductor substrate is annealed. During the period until a barrier layer is formed having also a function of improving tight adhesion, it is possible to ensure sufficient tight adhesion of wiring members and prevent peel-off of the wiring members.
摘要翻译：（a1）在半导体基板上形成的层间绝缘膜中形成有凹部。（a2）通过CVD形成Mn的第一膜，所述第一膜覆盖所述凹部的内表面和所述绝缘膜的上表面。（a3）基本上由Cu组成的导电材料沉积在第一膜上，以将导电材料嵌入凹部中。（a4）半导体衬底退火。在形成阻挡层的同时具有提高紧密粘合性的功能的期间，能够确保布线部件的充分的密合性，防止配线部件的剥离。

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