专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06180320B2 Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby 失效
标题翻译：具有精细图案的半导体器件的制造方法以及由此制造的半导体器件
公开(公告)号：US06180320B2
公开(公告)日：2001-01-30
申请号：US09371499
申请日：1999-08-10
申请人： Takayuki Saito , Takeo Ishibashi , Toshiyuki Toyoshima , Kanji Sugino , Naoki Yasuda , Tadashi Miyagi
发明人： Takayuki Saito , Takeo Ishibashi , Toshiyuki Toyoshima , Kanji Sugino , Naoki Yasuda , Tadashi Miyagi
IPC分类号： G03F7039
CPC分类号： G03F7/40 , H01L21/0274 , H01L21/0338
摘要： There is described a method of stably manufacturing a fine resist pattern narrower than the wavelength of exposing light from a stepper. Under the method, a resist pattern is formed on a semiconductor substrate through use of an acid catalyst chemically-amplified photoresist, and an organic film which includes an acid or which produces an acid on exposure to light is formed on the surface of the semiconductor substrate including the resist pattern. The organic film is then subjected to a heat treatment to thereby diffuse an acid. The surface layer of the resist pattern is made soluble in an alkaline developer, and the surface layer of the resist pattern is removed through use of the alkaline developer. As a result, a fine resist pattern is formed.
摘要翻译：描述了一种稳定地制造比曝光来自步进器的光的波长窄的精细抗蚀剂图案的方法。在该方法下，通过使用酸催化剂化学扩增的光致抗蚀剂在半导体衬底上形成抗蚀剂图案，并且在半导体衬底的表面上形成包含酸或在曝光时产生酸的有机膜包括抗蚀剂图案。然后对有机膜进行热处理，从而扩散酸。抗蚀剂图案的表面层可溶于碱性显影剂，通过使用碱性显影剂除去抗蚀剂图案的表面层。结果，形成精细的抗蚀剂图案。

2. 发明授权

US06319853B1 Method of manufacturing a semiconductor device using a minute resist pattern, and a semiconductor device manufactured thereby 有权
标题翻译：使用微小抗蚀剂图案的半导体器件的制造方法以及由此制造的半导体器件
公开(公告)号：US06319853B1
公开(公告)日：2001-11-20
申请号：US09537671
申请日：2000-03-29
申请人： Takeo Ishibashi , Toshiyuki Toyoshima , Keiichi Katayama , Naoki Yasuda
发明人： Takeo Ishibashi , Toshiyuki Toyoshima , Keiichi Katayama , Naoki Yasuda
IPC分类号： H01L2131
CPC分类号： G03F7/40 , G03F7/0035
摘要： There is described a method of producing a pure resist pattern having superior topography smaller than the limit of wavelength of exposure light. A first resist pattern containing material capable of producing an acid on exposure to light is coated with a second resist containing material which causes a crosslinking reaction in the presence of an acid. An acid is produced in the resist pattern by exposing the pattern to light, thus forming a crosslinked layer along the boundary surface between the first resist pattern and the second resist. As a result, a second resist pattern which is greater than the first resist pattern is formed. Minute pure resist patterns are produced through two-step processing: that is, by removing the second resist from the substrate through use of a liquid prepared by dissolving an organic solvent into water and by rinsing the substrate with water. The diameter of holes formed in the resist or the interval between isolated patterns can be reduced.
摘要翻译：描述了一种制造具有比曝光光的波长极限更好的形貌的纯抗蚀剂图案的方法。含有能够在暴露于光下产生酸的材料的第一抗蚀剂图案涂覆有在酸存在下引起交联反应的第二抗蚀剂含量材料。通过将图案曝光而在抗蚀剂图案中产生酸，从而沿着第一抗蚀剂图案和第二抗蚀剂之间的边界面形成交联层。结果，形成比第一抗蚀剂图案大的第二抗蚀剂图案。通过两步处理产生分钟的纯抗蚀剂图案：即，通过使用通过将有机溶剂溶解在水中而制备的液体并通过用水冲洗基材从基材中除去第二抗蚀剂。可以减少在抗蚀剂中形成的孔的直径或隔离图案之间的间隔。

3. 发明授权

US5858620A Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5858620A
公开(公告)日：1999-01-12
申请号：US785846
申请日：1997-01-24
申请人： Takeo Ishibashi , Ayumi Minamide , Toshiyuki Toyoshima , Keiichi Katayama
发明人： Takeo Ishibashi , Ayumi Minamide , Toshiyuki Toyoshima , Keiichi Katayama
IPC分类号： G03F7/00 , G03F7/40 , H01L21/027 , H01L21/311 , H01L21/3213 , G03C5/00
CPC分类号： H01L21/32139 , G03F7/0035 , G03F7/40 , H01L21/0273 , H01L21/31144 , G03F7/405
摘要： A first resist pattern, which is capable of generating an acid, is formed on a semiconductor device layer. Over the first resist pattern, a layer of a second resist, which is capable of undergoing an cross-linking reaction in the presence of an acid, is formed. Then, a cross-linked film is formed in portions of said layer of the second resist at the boundary with said first resist by action of an acid from said first resist. Thereafter, non-cross-linked portions of said second resist are removed to form a finely isolated resist pattern. The semiconductor device layer is etched, via a mask of said finely isolated resist pattern, to form a fine spaces or holes.
摘要翻译：能够产生酸的第一抗蚀剂图案形成在半导体器件层上。在第一抗蚀剂图案上，形成能够在酸存在下进行交联反应的第二抗蚀剂层。然后，通过来自所述第一抗蚀剂的酸的作用，在与所述第一抗蚀剂的边界处的所述第二抗蚀剂层的部分形成交联膜。此后，除去所述第二抗蚀剂的非交联部分以形成精细隔离的抗蚀剂图案。通过所述精细隔离的抗蚀剂图案的掩模蚀刻半导体器件层，以形成精细的空间或孔。

4. 发明授权

US06579657B1 Material for forming a fine pattern and method for manufacturing a semiconductor device using the same 失效
标题翻译：用于形成精细图案的材料和使用其制造半导体器件的方法
公开(公告)号：US06579657B1
公开(公告)日：2003-06-17
申请号：US09049072
申请日：1998-03-27
申请人： Takeo Ishibashi , Toshiyuki Toyoshima , Keiichi Katayama , Ayumi Minamide
发明人： Takeo Ishibashi , Toshiyuki Toyoshima , Keiichi Katayama , Ayumi Minamide
IPC分类号： G03F740
CPC分类号： H01L21/0271 , G03F7/0035 , G03F7/038 , G03F7/40 , H01L21/0273
摘要： A resist pattern, containing a material capable of generating an acid by exposure to light, is covered with a resist containing a material capable of crosslinkage in the presence of an acid. The acid is generated in the resist pattern by application of heat or by exposure to light, and a crosslinked layer is formed at the interface as a cover layer for the resist pattern, thereby causing the resist pattern to be thickened. Thus, the hole diameter of the resist pattern can be reduced, or the isolation width of a resist pattern can be reduced.
摘要翻译：含有能够通过曝光产生酸的材料的抗蚀剂图案被含有能够在酸存在下能够交联的材料的抗蚀剂覆盖。通过施加热或暴露于光而在抗蚀剂图案中产生酸，并且在界面处形成交联层作为抗蚀剂图案的覆盖层，从而使抗蚀剂图案变厚。因此，可以减小抗蚀剂图案的孔径，或者可以减小抗蚀剂图案的隔离宽度。

5. 发明申请

US20060246380A1 Micropattern forming material and method for forming micropattern 审中-公开
标题翻译：微图案形成材料和形成微图案的方法
公开(公告)号：US20060246380A1
公开(公告)日：2006-11-02
申请号：US11354728
申请日：2006-02-15
申请人： Mamoru Terai , Toshiyuki Toyoshima , Takeo Ishibashi , Shinji Tarutani
发明人： Mamoru Terai , Toshiyuki Toyoshima , Takeo Ishibashi , Shinji Tarutani
IPC分类号： G03C5/00
CPC分类号： G03F7/40 , G03F7/2024 , H01L21/02118 , H01L21/02282 , H01L21/312
摘要： A micropattern forming material is formed on a resist pattern containing an acidic group. The micropattern forming material comprises a compound that penetrates the resist pattern. The penetration of the compound causes the resist pattern to form a crosslinked layer and thereby swell resulting in formation of a film insoluble in water or alkali.
摘要翻译：在含有酸性基团的抗蚀剂图案上形成微图案形成材料。微图案形成材料包括穿透抗蚀剂图案的化合物。化合物的渗透导致抗蚀剂图案形成交联层，从而溶胀，形成不溶于水或碱的膜。

6. 发明授权

US07030007B2 Via-filling material and process for fabricating semiconductor integrated circuit using the material 失效
标题翻译：通孔填充材料和使用该材料的半导体集成电路的制造工艺
公开(公告)号：US07030007B2
公开(公告)日：2006-04-18
申请号：US10623772
申请日：2003-07-22
申请人： Teruhiko Kumada , Toshiyuki Toyoshima , Hideharu Nobutoki , Takeo Ishibashi , Yoshiharu Ono , Junjiro Sakai
发明人： Teruhiko Kumada , Toshiyuki Toyoshima , Hideharu Nobutoki , Takeo Ishibashi , Yoshiharu Ono , Junjiro Sakai
IPC分类号： H01L21/47
CPC分类号： H01L21/76808 , H01L21/02118 , H01L21/0212 , H01L21/02282 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/312 , H01L21/3127 , H01L21/76814
摘要： A via-filling material includes a polymer containing a repeating unit represented by wherein R1 one of hydrogen, fluorine, chlorine, bromine, and methyl group; R2 is one of hydrogen, a C1-3 alkyl group, and a C1-4 alkyl group in which the hydrogen is replaced by at least one of fluorine, chlorine, and bromine; and X is —C(═O)O— or —S(═O)2O—. This via-filling material does not generate deposits around an opening of a via hole during plasma etching and provides a semiconductor integrated circuit with high reliability, even when a trench wider than the via hole is formed by plasma etching around the via hole filled with the via-filling material.
摘要翻译：通孔填充材料包括含有由氢，氟，氯，溴和甲基中的R 1〜1个表示的重复单元的聚合物; R 2是氢，C 1-3烷基和被取代氢的C 1-4烷基中的一个通过氟，氯和溴中的至少一种; 并且X是-C（-O）O-或-S（-O）2 O-。这种通孔填充材料在等离子体蚀刻期间不会在通孔的开口附近产生沉积物，并且提供具有高可靠性的半导体集成电路，即使当通过等离子体蚀刻形成通孔以外的沟槽时，通孔周围填充有通孔通孔填充材料。

7. 发明申请

US20050101123A1 Via-filling material and process for fabricating semiconductor integrated circuit using the material 失效
标题翻译：通孔填充材料和使用该材料制造半导体集成电路的工艺
公开(公告)号：US20050101123A1
公开(公告)日：2005-05-12
申请号：US10623772
申请日：2003-07-22
申请人： Teruhiko Kumada , Toshiyuki Toyoshima , Hideharu Nobutoki , Takeo Ishibashi , Yoshiharu Ono , Junjiro Sakai
发明人： Teruhiko Kumada , Toshiyuki Toyoshima , Hideharu Nobutoki , Takeo Ishibashi , Yoshiharu Ono , Junjiro Sakai
IPC分类号： C08L33/04 , C08F20/22 , C08L63/00 , H01L21/311 , H01L21/312 , H01L21/768 , H01L21/44 , H01L21/4763
CPC分类号： H01L21/76808 , H01L21/02118 , H01L21/0212 , H01L21/02282 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/312 , H01L21/3127 , H01L21/76814
摘要： A via-filling material includes a polymer containing a repeating unit represented by wherein R1 one of hydrogen, fluorine, chlorine, bromine, and methyl group; R2 is one of hydrogen, a C1-3 alkyl group, and a C1-4 alkyl group in which the hydrogen is replaced by at least one of fluorine, chlorine, and bromine; and X is —C(═O)O or —S(═O)2O—. This via-filling material does not generate deposits around an opening of a via hole during plasma etching and provides a semiconductor integrated circuit with high reliability, even when a trench wider than the via hole is formed by plasma etching around the via hole filled with the via-filling material.
摘要翻译：通孔填充材料包括含有由氢，氟，氯，溴和甲基中的R 1〜1个表示的重复单元的聚合物; R 2是氢，C 1-3烷基和被取代氢的C 1-4烷基中的一个通过氟，氯和溴中的至少一种; 并且X是-C（-O）O或-S（-O）2 O-。这种通孔填充材料在等离子体蚀刻期间不会在通孔的开口附近产生沉积物，并且提供具有高可靠性的半导体集成电路，即使当通过等离子体蚀刻形成通孔以外的沟槽时，通孔周围填充有通孔通孔填充材料。

8. 发明申请

US20050181628A1 Process for preparing low dielectric constant material 审中-公开
标题翻译：制备低介电常数材料的工艺
公开(公告)号：US20050181628A1
公开(公告)日：2005-08-18
申请号：US11107800
申请日：2005-04-18
申请人： Hideharu Nobutoki , Teruhiko Kumada , Toshiyuki Toyoshima , Naoki Yasuda , Suguru Nagae
发明人： Hideharu Nobutoki , Teruhiko Kumada , Toshiyuki Toyoshima , Naoki Yasuda , Suguru Nagae
IPC分类号： C08G79/08 , H01L21/312 , H01L21/314 , H01L21/768 , H01L23/522 , H01L23/532 , H01L29/51 , H01L21/8242
CPC分类号： H01L21/02118 , H01L21/02164 , H01L21/312 , H01L21/314 , H01L21/76801 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L21/76835 , H01L23/53238 , H01L23/5329 , H01L29/51 , H01L2924/0002 , H01L2924/12044 , H01L2924/3011 , H01L2924/00
摘要： A process for preparing a low dielectric constant material comprising heat-treating a compound containing a borazine skeleton structure of the formula: wherein at least one of R1 to R6 is a bond which binds said borazine skeleton structure to a molecule of a inorganic or organic compound, and/or R1 to R6 are independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an amino group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group, an alkylphosphino group or a group of the formula: Si(OR7)(OR8)(OR9), and at least one of R1 to R6 is not a hydrogen atom.
摘要翻译：一种制备低介电常数材料的方法，包括热处理含有下式的环硼氮烷骨架结构的化合物：其中R 1至R 6中的至少一个为将所述环硼氮烷骨架结构结合成无机或有机化合物的分子和/或R 1至R 6的键独立地为氢原子，具有1个 20个碳原子，芳基，取代芳基，烯基，氨基，烷基氨基，烷氧基，硫代烷氧基，羰基，甲硅烷基，烷基甲硅烷基，膦基，烷基膦基或下式的基团：Si（OR 7）（OR 8）（OR 9））和至少一个 R 1至R 6不是氢原子。

9. 发明授权

US08674046B2 Source material for preparing low dielectric constant material 有权
标题翻译：用于制备低介电常数材料的源材料
公开(公告)号：US08674046B2
公开(公告)日：2014-03-18
申请号：US12558810
申请日：2009-09-14
申请人： Hideharu Nobutoki , Teruhiko Kumada , Toshiyuki Toyoshima , Naoki Yasuda , Suguru Nagae
发明人： Hideharu Nobutoki , Teruhiko Kumada , Toshiyuki Toyoshima , Naoki Yasuda , Suguru Nagae
IPC分类号： C08G79/08 , C08G73/06 , C08G79/00 , C08G73/00
CPC分类号： H01L21/02118 , H01L21/02164 , H01L21/312 , H01L21/314 , H01L21/76801 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L21/76835 , H01L23/53238 , H01L23/5329 , H01L29/51 , H01L2924/0002 , H01L2924/12044 , H01L2924/3011 , H01L2924/00
摘要： A low dielectric constant material having an excellent water resistance obtained by heat-treating a borazine compound of the formula (1-2): or an inorganic or organic compound having a group derived from the borazine compound (1-2) to undergo a condensation reaction, thereby producing an oligomer or polymer, wherein R1 to R6 are independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an amino group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group, an alkylphosphino group, or a group of the formula: Si(OR7)(OR8)(OR9), and at least one of R1 to R6 is not hydrogen atom.
摘要翻译：通过热处理式（1-2）的环硼氮烷化合物获得的具有优异耐水性的低介电常数材料或具有衍生自环硼氮烷化合物（1-2）的基团的无机或有机化合物进行缩合反应，由此制备低聚物或聚合物，其中R 1至R 6独立地为氢原子，具有1至20个碳原子的烷基，芳基，取代的芳基，烯基，氨基，烷基氨基，烷氧基，硫代烷氧基，羰基，甲硅烷基，烷基甲硅烷基，膦基，烷基膦基或下式的基团：Si（OR7）（OR8）（OR9），和至少一个的R 1至R 6不是氢原子。

10. 发明申请

US20100004425A1 SOURCE MATERIAL FOR PREPARING LOW DIELECTRIC CONSTANT MATERIAL 有权
标题翻译：用于制备低介电常数材料的材料
公开(公告)号：US20100004425A1
公开(公告)日：2010-01-07
申请号：US12558810
申请日：2009-09-14
申请人： Hideharu Nobutoki , Teruhiko Kumada , Toshiyuki Toyoshima , Naoki Yasuda , Suguru Nagae
发明人： Hideharu Nobutoki , Teruhiko Kumada , Toshiyuki Toyoshima , Naoki Yasuda , Suguru Nagae
IPC分类号： C08G79/08 , C07F5/02
CPC分类号： H01L21/02118 , H01L21/02164 , H01L21/312 , H01L21/314 , H01L21/76801 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L21/76835 , H01L23/53238 , H01L23/5329 , H01L29/51 , H01L2924/0002 , H01L2924/12044 , H01L2924/3011 , H01L2924/00
摘要： A low dielectric constant material having an excellent water resistance obtained by heat-treating a borazine compound of the formula (1-2): or an inorganic or organic compound having a group derived from the borazine compound (1-2) to undergo a condensation reaction, thereby producing an oligomer or polymer, wherein R1 to R6 are independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an amino group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group, an alkylphosphino group, or a group of the formula: Si(OR7)(OR8)(OR9), and at least one of R1 to R6 is not hydrogen atom.
摘要翻译：通过热处理式（1-2）的环硼氮烷化合物获得的具有优异耐水性的低介电常数材料或具有衍生自环硼氮烷化合物（1-2）的基团的无机或有机化合物进行缩合反应，由此制备低聚物或聚合物，其中R 1至R 6独立地为氢原子，具有1至20个碳原子的烷基，芳基，取代的芳基，烯基，氨基，烷基氨基，烷氧基，硫代烷氧基，羰基，甲硅烷基，烷基甲硅烷基，膦基，烷基膦基或下式的基团：Si（OR7）（OR8）（OR9），和至少一个的R 1至R 6不是氢原子。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式