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1. 发明申请

US20060147921A1 Method of amplifying nucleic acid and apparatus therefor 审中-公开
标题翻译：扩增核酸的方法及其设备
公开(公告)号：US20060147921A1
公开(公告)日：2006-07-06
申请号：US10524263
申请日：2002-11-13
申请人： Takayuki Kanda , Sinichi Fukuzono , Satoshi Takahashi
发明人： Takayuki Kanda , Sinichi Fukuzono , Satoshi Takahashi
IPC分类号： C12Q1/68 , C12P19/34 , C07H21/04
CPC分类号： C12Q1/6851 , B01L7/52 , C12Q1/6844 , C12Q2527/137
摘要： In nucleic acid amplification, the amount of a labeled or modified oligomer used is reduced to lower cost, and detection is enabled within the measurement range of a detection unit without requiring operations such as dilution. A nucleic acid measurement method of the invention comprises the steps of extracting a target nucleic acid, mixing an oligomer labeled with a luminescent substance or a modification group with another oligomer that has the same base sequence with that of the labeled oligomer and that is not labeled with a luminescent substance or a modification group, amplifying the target nucleic acid using the mixture of the labeled oligomer and the unlabeled oligomer, adding a luminescent substance to an oligomer labeled with a modification group and its amplification product, and measuring the amplified target nucleic acid using a photodetector.
摘要翻译：在核酸扩增中，使用的标记或修饰的低聚物的量降低到较低成本，并且在检测单元的测量范围内能够进行检测，而不需要诸如稀释的操作。本发明的核酸测定方法包括以下步骤：提取靶核酸，将用发光物质或修饰基团标记的寡聚物与标记的寡聚体具有相同碱基序列的另一低聚物混合并且未标记使用发光物质或修饰基团，使用标记的寡聚体和未标记的寡聚体的混合物来扩增靶核酸，向发现的修饰基团标记的寡聚物及其扩增产物中加入发光物质，并测定扩增的靶核酸使用光电检测器。

2. 发明申请

US20050003618A1 Method of manufacturing semiconductor device having oxide films with different thickness 有权
标题翻译：制造具有不同厚度的氧化物膜的半导体器件的方法
公开(公告)号：US20050003618A1
公开(公告)日：2005-01-06
申请号：US10843694
申请日：2004-05-12
申请人： Takayuki Kanda
发明人： Takayuki Kanda
IPC分类号： H01L21/8234 , H01L21/8244 , H01L27/088 , H01L27/10 , H01L27/11 , H01L21/336
CPC分类号： H01L21/823462
摘要： After a first gate oxide film (302) is formed on a substrate (301), a nitride layer (303) is formed by a first oxynitriding process. The first gate oxide film is selectively removed from a thinner film part area of the substrate. A second gate oxide film forming process forms a second gate oxide film (305A) in the thinner film part area and a third gate oxide film (305B) in a thicker film part area. By executing second oxynitriding process, nitride layers (306A and 306B) are formed at the thinner and the thicker part areas.
摘要翻译：在基板（301）上形成第一栅氧化膜（302）之后，通过第一次氮氧化处理形成氮化物层（303）。从衬底的薄膜部分区域中选择性地去除第一栅氧化膜。第二栅极氧化膜形成工艺在较薄的膜部分区域中形成第二栅极氧化膜（305A），在较厚的膜部分区域形成第三栅极氧化膜（305B）。通过执行第二氧氮化处理，在较薄和较厚的部分区域形成氮化物层（306A和306B）。

3. 发明授权

US06713353B1 Method of manufacturing a semiconductor integrated circuit device 有权
公开(公告)号：US06713353B1
公开(公告)日：2004-03-30
申请号：US09536756
申请日：2000-03-28
申请人： Takayuki Kanda , Atsushi Hiraiwa , Norio Suzuki , Satoshi Sakai , Shuji Ikeda , Yasuko Yoshida , Shinichi Horibe
发明人： Takayuki Kanda , Atsushi Hiraiwa , Norio Suzuki , Satoshi Sakai , Shuji Ikeda , Yasuko Yoshida , Shinichi Horibe
IPC分类号： H01L218234
CPC分类号： H01L21/823878 , H01L21/823857
摘要： A protection film is formed on a silicon oxide film 6 formed on the surface of a semiconductor substrate, a silicon oxide film is removed from a region where a thin gate-insulating film is to be formed by using, as a mask, a photoresist pattern that covers a region where a thick gate-insulating film is to be formed, and, then, the photoresist pattern is removed followed by washing. Then, the semiconductor substrate is heat-oxidized or a film is deposited thereon to form gate-insulating films having different thicknesses.

4. 发明授权

US07163871B2 Manufacturing method of semiconductor device and oxidization method of semiconductor substrate 有权
标题翻译：半导体器件的制造方法和半导体衬底的氧化方法
公开(公告)号：US07163871B2
公开(公告)日：2007-01-16
申请号：US10763244
申请日：2004-01-26
申请人： Taishi Kubota , Yoshihiro Kitamura , Takuo Ohashi , Susumu Sakurai , Takayuki Kanda , Shinichi Horibe
发明人： Taishi Kubota , Yoshihiro Kitamura , Takuo Ohashi , Susumu Sakurai , Takayuki Kanda , Shinichi Horibe
IPC分类号： H01L21/76
CPC分类号： H01L21/76232
摘要： A manufacturing method of a semiconductor device having a trench is provided to form, at a corner portion of the trench, an oxide film which is greater in thickness and smaller in stress than at other portions. When the trench formed in the semiconductor substrate is oxidized, it is oxidized in an oxygen environment containing dichloroethylene at a predetermined weight percent to allow the formation of an oxide film having a greater thickness at the corner portion of the trench than thickness at other portions, whereby the semiconductor device improving dielectric breakdown characteristics can be obtained.
摘要翻译：提供具有沟槽的半导体器件的制造方法，以在沟槽的角部形成厚度大于应力的氧化膜，其压力小于其它部分。当在半导体衬底中形成的沟槽被氧化时，其在含有二氯乙烯的氧环境中以预定的重量百分数被氧化，以允许在沟槽的角部比其它部分的厚度形成厚度更大的氧化膜，从而可以获得提高绝缘击穿特性的半导体器件。

5. 发明申请

US20060125029A1 Method of manufacturing semiconductor device having oxide films with different thickness 审中-公开
标题翻译：制造具有不同厚度的氧化物膜的半导体器件的方法
公开(公告)号：US20060125029A1
公开(公告)日：2006-06-15
申请号：US11291068
申请日：2005-12-01
申请人： Takayuki Kanda
发明人： Takayuki Kanda
IPC分类号： H01L29/94 , H01L21/8238
CPC分类号： H01L21/823462
摘要： After a first gate oxide film is formed on a substrate, a nitride layer is formed by a first oxynitriding process. The first gate oxide film is selectively removed from a thinner film part area of the substrate. A second gate oxide film forming process forms a second gate oxide film in the thinner film part area and a third gate oxide film in a thicker film part area. By executing second oxynitriding process, nitride layers are formed at the thinner and the thicker part areas.
摘要翻译：在基板上形成第一栅极氧化膜之后，通过第一次氮氧化处理形成氮化物层。从衬底的薄膜部分区域中选择性地去除第一栅氧化膜。第二栅极氧化膜形成工艺在较薄的膜部分区域中形成第二栅极氧化膜，并且在较厚的膜部分区域中形成第三栅极氧化物膜。通过进行第二次氮氧化处理，在较薄的部分区域形成氮化物层。

6. 发明申请

US20050009072A1 Genetic testing kits and a method of bladder cancer 有权
标题翻译：遗传检测试剂盒和膀胱癌的方法
公开(公告)号：US20050009072A1
公开(公告)日：2005-01-13
申请号：US10854327
申请日：2004-05-27
申请人： Koshi Maeda , Shinichi Fukuzono , Takayuki Kanda , Kokichi Sugano
发明人： Koshi Maeda , Shinichi Fukuzono , Takayuki Kanda , Kokichi Sugano
IPC分类号： G01N33/574 , C07H21/04 , C12N15/09 , C12Q1/68
CPC分类号： C07H21/04 , C12Q1/6886 , C12Q2600/156
摘要： A deletion in the end region of the long arm of a Chromosome 9 is efficiently detected. A genetic testing kit of bladder cancer according to the present invention includes a primer allowing for efficient amplification of a region containing a site of genetic polymorphism present in the ABO blood group genes of Chromosome 9. In the site of genetic polymorphism present in the ABO blood group genes, the frequency of heterozygote (heterozygosity) in the population is extremely high. Therefore, by detecting LOH using a polymorphic site present in the ABO blood group genes, it is possible to reliably detect a deletion near the polymorphic site, in other words, a deletion near the end of the long arm of Chromosome 9.
摘要翻译：有效地检测染色体9的长臂的末端区域的缺失。根据本发明的膀胱癌的遗传检测试剂盒包括允许有效扩增含有染色体9的ABO血型基因中存在的遗传多态性位点的区域的引物。在存在于ABO血液中的遗传多态性位点群体基因，杂种（杂合性）在群体中的频率极高。因此，通过使用存在于ABO血型基因中的多态性位点检测LOH，可以可靠地检测多态性位点附近的缺失，换句话说，在染色体9的长臂末端附近的缺失。

7. 发明授权

US07737048B2 Method for controlling thickness distribution of a film 有权
标题翻译：控制薄膜厚度分布的方法
公开(公告)号：US07737048B2
公开(公告)日：2010-06-15
申请号：US11514934
申请日：2006-09-05
申请人： Takayuki Kanda
发明人： Takayuki Kanda
IPC分类号： H01L21/31
CPC分类号： H01L22/20 , H01L21/02238 , H01L21/02255 , H01L21/31662 , H01L22/12
摘要： A method for forming an oxide film includes a first in-situ steam generation (ISSG) process using a 1%-H2 concentration in the ambient gas and a subsequent second ISSG process using a 5%-H2 concentration in the ambient gas, wherein the second ISSG process compensates an in-plane thickness distribution of the film formed by the first ISSG process. The time length for the first and second ISSG steps is determined based on a desired film thickness, a time length dependency of a film formed by the second ISSG process, and the oxidation rate of the first and second ISSG processes.
摘要翻译：形成氧化膜的方法包括在环境气体中使用1％-H2浓度的第一原位蒸汽产生（ISSG）方法和在环境气体中使用5％-H 2浓度的随后的第二ISSG方法，其中第二ISSG过程补偿由第一ISSG工艺形成的膜的面内厚度分布。第一和第二ISSG步骤的时间长度是基于期望的膜厚度，由第二ISSG工艺形成的膜的时间长度依赖性以及第一和第二ISSG工艺的氧化速率来确定的。

8. 发明申请

US20070054423A1 Method for controlling thickness distribution of a film 有权
标题翻译：控制薄膜厚度分布的方法
公开(公告)号：US20070054423A1
公开(公告)日：2007-03-08
申请号：US11514934
申请日：2006-09-05
申请人： Takayuki Kanda
发明人： Takayuki Kanda
IPC分类号： H01L21/66
CPC分类号： H01L22/20 , H01L21/02238 , H01L21/02255 , H01L21/31662 , H01L22/12
摘要： A method for forming an oxide film includes a first in-situ steam generation (ISSG) process using a 1%-H2 concentration in the ambient gas and a subsequent second ISSG process using a 5%-H2 concentration in the ambient gas, wherein the second ISSG process compensates an in-plane thickness distribution of the film formed by the first ISSG process. The time length for the first and second ISSG steps is determined based on a desired film thickness, a time length dependency of a film formed by the second ISSG process, and the oxidation rate of the first and second ISSG processes.
摘要翻译：形成氧化膜的方法包括在环境气体中使用1％-H 2 O 2浓度的第一原位蒸汽产生（ISSG）方法和使用5％-H 环境气体中的2 浓度，其中第二ISSG过程补偿由第一ISSG工艺形成的膜的面内厚度分布。第一和第二ISSG步骤的时间长度是基于期望的膜厚度，由第二ISSG工艺形成的膜的时间长度依赖性以及第一和第二ISSG工艺的氧化速率来确定的。

9. 发明授权

US06604021B2 Communication robot 有权
标题翻译：通讯机器人
公开(公告)号：US06604021B2
公开(公告)日：2003-08-05
申请号：US09886668
申请日：2001-06-21
申请人： Michita Imai , Hiroshi Ishiguro , Tesuo Ono , Takeshi Maeda , Takayuki Kanda
发明人： Michita Imai , Hiroshi Ishiguro , Tesuo Ono , Takeshi Maeda , Takayuki Kanda
IPC分类号： G06F1900
CPC分类号： G06N3/008 , G06F19/00
摘要： A communication robot includes a speaker. By generating a sound or voice through the speaker, the human is requested to cause a robot to make a certain action. When the human makes an action to the robot, the movement of the robot head or arm assists for the action.
摘要翻译：通信机器人包括扬声器。通过扬声器产生声音或声音，请人们使机器人做出一定的动作。当人类对机器人采取行动时，机器人头部或手臂的运动有助于行动。

10. 发明授权

US07592137B2 Genetic testing kits and a method of bladder cancer 有权
标题翻译：遗传检测试剂盒和膀胱癌的方法
公开(公告)号：US07592137B2
公开(公告)日：2009-09-22
申请号：US10854327
申请日：2004-05-27
申请人： Koshi Maeda , Shinichi Fukuzono , Takayuki Kanda , Kokichi Sugano
发明人： Koshi Maeda , Shinichi Fukuzono , Takayuki Kanda , Kokichi Sugano
IPC分类号： C07H21/04 , C12Q1/68
CPC分类号： C07H21/04 , C12Q1/6886 , C12Q2600/156
摘要： A deletion in the end region of the long arm of a Chromosome 9 is efficiently detected.A genetic testing kit of bladder cancer according to the present invention includes a primer allowing for efficient amplification of a region containing a site of genetic polymorphism present in the ABO blood group gene of Chromosome 9. In the site of genetic polymorphism present in the ABO blood group gene, the frequency of heterozygote (heterozygosity) in the population is extremely high. Therefore, by detecting LOH using a polymorphic site present in the ABO blood group gene, it is possible to reliably detect a deletion near the polymorphic site, in other words, a deletion near the end of the long arm of Chromosome 9.
摘要翻译：有效地检测染色体9的长臂的末端区域的缺失。根据本发明的膀胱癌的遗传检测试剂盒包括允许有效扩增含有染色体9的ABO血型基因中存在的遗传多态性位点的区域的引物。在存在于ABO血液中的遗传多态性位点群体基因，种群中杂合子（杂合性）的频率极高。因此，通过使用ABO血型基因中存在的多态性位点检测LOH，可以可靠地检测多态性位点附近的缺失，换句话说，在染色体9的长臂末端附近的缺失。

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