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1. 发明申请

US20080212793A1 Arrangement structure of sound system in motorcycle 有权
标题翻译：摩托车音响系统布置结构
公开(公告)号：US20080212793A1
公开(公告)日：2008-09-04
申请号：US12007006
申请日：2008-01-04
申请人： Takayuki Kai , Kazuhlko Mori , Atsushi Hatayama , Junichi Sakamoto
发明人： Takayuki Kai , Kazuhlko Mori , Atsushi Hatayama , Junichi Sakamoto
IPC分类号： H04B1/00
CPC分类号： B60R11/0217
摘要： To provide an arrangement structure of a sound system in a motorcycle which can ensure the operability of a sound operation unit while ensuring the visibility of a meter. In a motorcycle which arranges a meter indicating information on a vehicle and a sound operation unit for providing a reproduction operation or the like in a sound system in the vicinity of a steering portion, the meter and the sound operation unit are constituted as bodies separate from each other. The meter and the sound operation unit are arranged, as viewed in the axial direction of a head pipe which supports a steering portion, in front of and behind the head pipe.
摘要翻译：为了提供摩托车中的声音系统的布置结构，其能够确保声音操作单元的可操作性，同时确保仪表的可视性。在将在车辆上指示信息的计时器的摩托车和用于在转向部附近的声音系统中提供再现操作等的声音操作单元，仪表和声音操作单元构成为与彼此。在支管转向部的头管的轴向观察时，仪表和声音操作单元布置在头管的前面和后面。

2. 发明授权

US08121308B2 Arrangement structure of sound system in motorcycle 有权
标题翻译：摩托车音响系统布置结构
公开(公告)号：US08121308B2
公开(公告)日：2012-02-21
申请号：US12007006
申请日：2008-01-04
申请人： Takayuki Kai , Kazuhiko Mori , Atsushi Hatayama , Junichi Sakamoto
发明人： Takayuki Kai , Kazuhiko Mori , Atsushi Hatayama , Junichi Sakamoto
IPC分类号： H04B1/00
CPC分类号： B60R11/0217
摘要： To provide an arrangement structure of a sound system in a motorcycle which can ensure the operability of a sound operation unit while ensuring the visibility of a meter. In a motorcycle which arranges a meter indicating information on a vehicle and a sound operation unit for providing a reproduction operation or the like in a sound system in the vicinity of a steering portion, the meter and the sound operation unit are constituted as bodies separate from each other. The meter and the sound operation unit are arranged, as viewed in the axial direction of a head pipe which supports a steering portion, in front of and behind the head pipe.
摘要翻译：为了提供摩托车中的声音系统的布置结构，其能够确保声音操作单元的可操作性，同时确保仪表的可视性。在将在车辆上指示信息的计时器的摩托车和用于在转向部附近的声音系统中提供再现操作等的声音操作单元，仪表和声音操作单元构成为与彼此。在支管转向部的头管的轴向观察时，仪表和声音操作单元布置在头管的前面和后面。

3. 发明授权

US08450836B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08450836B2
公开(公告)日：2013-05-28
申请号：US13181073
申请日：2011-07-12
申请人： Shinichiro Uemura , Yukio Hiraoka , Takayuki Kai
发明人： Shinichiro Uemura , Yukio Hiraoka , Takayuki Kai
IPC分类号： H01L23/552 , H01L21/00
CPC分类号： H01L21/762 , H01L21/823481 , H01L21/823878 , H01L23/481 , H01L23/552 , H01L23/585 , H01L23/66 , H01L24/05 , H01L24/48 , H01L24/73 , H01L2224/04042 , H01L2224/48091 , H01L2924/00014 , H01L2924/12036 , H01L2924/3011 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A digital circuit portion (6) and an analog circuit portion (7) are formed in a surface portion of a semiconductor substrate (4). A via (20) is formed in a region between the digital circuit portion (6) and the analog circuit portion (7). The via (20) extends through the semiconductor substrate (4) from a front surface to a back surface thereof, and is made of a dielectric (2) having its surface covered by a metal (1). The metal (1) is grounded. Signal interference between the analog circuit portion (6) and the digital circuit portion (7) is reduced by the via (20).
摘要翻译：数字电路部分（6）和模拟电路部分（7）形成在半导体衬底（4）的表面部分中。在数字电路部分（6）和模拟电路部分（7）之间的区域中形成通孔（20）。通孔（20）从前表面延伸穿过半导体衬底（4）到其后表面，并由其表面被金属（1）覆盖的电介质（2）制成。金属（1）接地。模拟电路部分（6）和数字电路部分（7）之间的信号干扰由通路（20）减小。

4. 发明授权

US08324685B2 Semiconductor device having a fin-type semiconductor region 有权
标题翻译：具有翅片型半导体区域的半导体器件
公开(公告)号：US08324685B2
公开(公告)日：2012-12-04
申请号：US12866649
申请日：2010-01-20
申请人： Tomohiro Okumura , Takayuki Kai , Yuichiro Sasaki
发明人： Tomohiro Okumura , Takayuki Kai , Yuichiro Sasaki
IPC分类号： H01L27/12
CPC分类号： H01L21/2236 , H01L29/66803 , H01L29/785
摘要： A fin-semiconductor region (13) is formed on a substrate (11). A first impurity which produces a donor level or an acceptor level in a semiconductor is introduced in an upper portion and side portions of the fin-semiconductor region (13), and oxygen or nitrogen is further introduced as a second impurity in the upper portion and side portions of the fin-semiconductor region (13).
摘要翻译：鳍状半导体区域（13）形成在基板（11）上。在半导体半导体区域的上部和侧部引入在半导体中产生施主电位或受主电平的第一杂质，并且在上部进一步引入氧或氮作为第二杂质，翅片半导体区域（13）的侧面部分。

5. 发明申请

US20120119384A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120119384A1
公开(公告)日：2012-05-17
申请号：US13387204
申请日：2011-03-28
申请人： Yoshimasa Takii , Takayuki Kai , Daishiro Saito , Takafumi Okuma
发明人： Yoshimasa Takii , Takayuki Kai , Daishiro Saito , Takafumi Okuma
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L21/76898 , H01L23/481 , H01L23/525 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/02372 , H01L2224/02375 , H01L2224/02381 , H01L2224/0347 , H01L2224/0401 , H01L2224/05008 , H01L2224/05548 , H01L2224/13021 , H01L2224/13022 , H01L2224/13024 , H01L2224/131 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01082 , H01L2924/014
摘要： In a semiconductor device having a through-hole electrode and a manufacturing method thereof, a dummy groove hole portion for forming insulating portion insulating wirings from each other is provided, to surround a rewiring layer including a through-hole electrode on a back surface of a semiconductor substrate. This allows the wirings to be insulated from each other just by removing the metal layer existing at a bottom portion of the dummy groove hole portion. Thus, a reduction in the processing time can be realized.
摘要翻译：在具有通孔电极的半导体器件及其制造方法中，设置用于形成绝缘部分绝缘布线的虚拟槽孔部分，以在包括通孔电极的背面上的包括通孔电极的重新布线层半导体衬底。这允许通过去除存在于虚拟槽孔部分的底部处的金属层而使布线彼此绝缘。因此，可以实现处理时间的缩短。

6. 发明申请

US20120104563A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20120104563A1
公开(公告)日：2012-05-03
申请号：US13377940
申请日：2010-11-01
申请人： Daishiro Saito , Takayuki Kai , Takafumi Okuma , Hitoshi Yamanishi
发明人： Daishiro Saito , Takayuki Kai , Takafumi Okuma , Hitoshi Yamanishi
IPC分类号： H01L29/41 , H01L21/66
CPC分类号： H01L21/76898 , H01L23/481 , H01L24/03 , H01L24/05 , H01L2224/02372 , H01L2224/0401 , H01L2224/05548 , H01L2924/14 , H01L2924/00
摘要： A semiconductor device includes a second oxide film and a pad electrode on a first oxide film that is formed on a front surface of a semiconductor substrate, a contact electrode and a first barrier layer formed in the second oxide film and connected to the pad electrode, a silicide portion formed between the contact electrode and a through-hole electrode layer and connected to the contact electrode and the first barrier layer, a via hole extending from a back surface of the semiconductor substrate to reach the silicide portion and the second oxide film, a third oxide film formed on a sidewall of the via hole and on the back surface of the semiconductor substrate, and a second barrier layer and a rewiring layer formed inside the via hole and on the back surface of the semiconductor substrate and connected to the silicide portion.
摘要翻译：半导体器件包括第一氧化物膜上的第二氧化物膜和焊盘电极，所述第一氧化物膜形成在半导体衬底的前表面上，接触电极和形成在第二氧化物膜中并连接到焊盘电极的第一势垒层，在所述接触电极和通孔电极层之间形成并连接到所述接触电极和所述第一阻挡层的硅化物部分，从所述半导体衬底的背面延伸到达所述硅化物部分和所述第二氧化物膜的通孔，形成在所述通孔的侧壁上和所述半导体衬底的背面上的第三氧化物膜，以及形成在所述通孔内部和所述半导体衬底的背面上并连接到所述硅化物的第二阻挡层和再布线层一部分。

7. 发明申请

US20070261490A1 Acceleration sensor and method of producing the same 有权
标题翻译：加速度传感器及其制造方法
公开(公告)号：US20070261490A1
公开(公告)日：2007-11-15
申请号：US11706281
申请日：2007-02-15
申请人： Takayuki Kai
发明人： Takayuki Kai
IPC分类号： G01P15/09 , H01L21/00
CPC分类号： G01P15/123 , G01P15/0802 , G01P15/18 , G01P2015/0842
摘要： An acceleration sensor includes a weight; a base portion, a beam; and a piezo resistance element. The weight is arranged to displace upon receiving acceleration. The base portion is disposed around the weight apart from the weight. The beam has one end portion connected to the weight and the other end portion connected to the base portion. The beam also has a thick layer portion and a thin layer portion having a thickness smaller than that of the thick layer portion. The piezo resistance element is disposed over the thick layer portion and the thin layer portion.
摘要翻译：加速度传感器包括一个重量; 基部，梁; 和压电电阻元件。重量被设置为在接收加速度时移位。底座部分配置在重量之外。梁具有连接到重物的一个端部和连接到基部的另一端部。光束还具有厚层部分和薄层部分，其厚度小于厚层部分的厚度。压电电阻元件设置在厚层部分和薄层部分之上。

8. 发明申请

US20110049628A1 SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING THE SAME, AND PLASMA DOPING SYSTEM 有权
标题翻译：半导体器件，其制造方法和等离子体掺杂系统
公开(公告)号：US20110049628A1
公开(公告)日：2011-03-03
申请号：US12866649
申请日：2010-01-20
申请人： Tomohiro Okumura , Takayuki Kai , Yuichiro Sasaki
发明人： Tomohiro Okumura , Takayuki Kai , Yuichiro Sasaki
IPC分类号： H01L29/786 , H01L21/336 , H01L21/425 , H01L21/465
CPC分类号： H01L21/2236 , H01L29/66803 , H01L29/785
摘要： A fin-semiconductor region (13) is formed on a substrate (11). A first impurity which produces a donor level or an acceptor level in a semiconductor is introduced in an upper portion and side portions of the fin-semiconductor region (13), and oxygen or nitrogen is further introduced as a second impurity in the upper portion and side portions of the fin-semiconductor region (13).
摘要翻译：鳍状半导体区域（13）形成在基板（11）上。在半导体半导体区域的上部和侧部引入在半导体中产生施主电位或受主电平的第一杂质，并且在上部进一步引入氧或氮作为第二杂质，翅片半导体区域（13）的侧面部分。

9. 发明申请

US20090115006A1 SOI substrate and semiconductor acceleration sensor using the same 失效
标题翻译： SOI衬底和使用其的半导体加速度传感器
公开(公告)号：US20090115006A1
公开(公告)日：2009-05-07
申请号：US12222807
申请日：2008-08-15
申请人： Takayuki Kai
发明人： Takayuki Kai
IPC分类号： H01L29/66 , B32B9/00
CPC分类号： G01P15/123 , B81B2201/0235 , B81B2203/0109 , B81B2203/019 , B81C1/00626 , G01P15/0802
摘要： According to the present invention, a SOI substrate includes a first silicon substrate having first and second surfaces; a second silicon substrate having first and second surfaces; and a first insulating layer formed between first surface of the first silicon substrate and the first surface of the second silicon substrates. The first surface of the first silicon substrate is partly depressed to form a thin-layer region thereat. The first insulating layer is formed at least in the thin-layer region.
摘要翻译：根据本发明，SOI衬底包括具有第一和第二表面的第一硅衬底; 具有第一和第二表面的第二硅衬底; 以及形成在第一硅衬底的第一表面和第二硅衬底的第一表面之间的第一绝缘层。第一硅衬底的第一表面部分地被压下以在其上形成薄层区域。第一绝缘层至少形成在薄层区域中。

10. 发明申请

US20060156817A1 Acceleration sensor with redundant contact holes 有权
标题翻译：具有冗余接触孔的加速度传感器
公开(公告)号：US20060156817A1
公开(公告)日：2006-07-20
申请号：US11325336
申请日：2006-01-05
申请人： Takayuki Kai
发明人： Takayuki Kai
IPC分类号： G01P15/00
CPC分类号： G01P15/18 , G01P15/123 , G01P2015/084
摘要： An acceleration sensor includes a mass and a supporting member linked by a flexible beam. A strain detector having low-resistance areas at both ends is formed near a boundary between the beam and the mass or between the beam and the supporting member. A dielectric film formed on the supporting member and the beam has multiple contact holes disposed over each low-resistance area. Wiring formed on the dielectric film is connected to the low-resistance areas through the contact holes. The provision of multiple contact holes for each low-resistance area extends the life of the acceleration sensor by preventing sensor failure due to the separation or other failure of any single contact.
摘要翻译：加速度传感器包括质量和由柔性梁连接的支撑构件。在梁和质量块之间或梁与支撑构件之间的边界附近形成在两端具有低电阻区域的应变检测器。形成在支撑构件和梁上的电介质膜具有设置在每个低电阻区域上的多个接触孔。电介质膜上形成的布线通过接触孔连接到低电阻区域。为每个低电阻区域提供多个接触孔通过防止由于任何单个触点的分离或其他故障导致的传感器故障来延长加速度传感器的寿命。

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