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1. 发明授权

US08330887B2 Liquid crystal display device and electronic device 有权
标题翻译：液晶显示装置及电子装置
公开(公告)号：US08330887B2
公开(公告)日：2012-12-11
申请号：US12219020
申请日：2008-07-15
申请人： Yoshiyuki Kurokawa , Takayuki Ikeda , Takeshi Osada , Takayuki Inoue
发明人： Yoshiyuki Kurokawa , Takayuki Ikeda , Takeshi Osada , Takayuki Inoue
IPC分类号： G02F1/136
CPC分类号： G02F1/1368 , G02F1/133707 , G02F2201/40 , H01L27/1222 , H01L29/04 , H01L29/41733 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L29/78669 , H01L29/78678 , H01L29/78696
摘要： It is an object to provide a liquid crystal display device and an electronic device of which aperture ratio increases. The present invention includes a substrate having an insulating surface, a transistor formed over the substrate, a pixel electrode electrically connected to the transistor. The transistor includes a gate electrode, a gate insulating layer over the gate electrode, a semiconductor layer having a microcrystalline structure over the gate insulating layer, and a buffer layer over the semiconductor layer having the microcrystalline structure. The channel width W of the transistor and the channel length L of the transistor satisfy a relation of 0.1≦W/L≦1.7.
摘要翻译：本发明的目的是提供一种开口率增加的液晶显示装置和电子装置。本发明包括具有绝缘表面的衬底，形成在衬底上的晶体管，电连接到晶体管的像素电极。晶体管包括栅电极，栅电极上的栅极绝缘层，在栅极绝缘层上具有微晶结构的半导体层，以及在具有微晶结构的半导体层上的缓冲层。晶体管的沟道宽度W和晶体管的沟道长度L满足关系式为0.1＆nlE; W / L＆nlE; 1.7。

2. 发明授权

US07968880B2 Thin film transistor and display device 有权
标题翻译：薄膜晶体管和显示装置
公开(公告)号：US07968880B2
公开(公告)日：2011-06-28
申请号：US12391398
申请日：2009-02-24
申请人： Koji Dairiki , Takayuki Ikeda , Hidekazu Miyairi , Yoshiyuki Kurokawa , Hiromichi Godo , Daisuke Kawae , Takayuki Inoue , Satoshi Kobayashi
发明人： Koji Dairiki , Takayuki Ikeda , Hidekazu Miyairi , Yoshiyuki Kurokawa , Hiromichi Godo , Daisuke Kawae , Takayuki Inoue , Satoshi Kobayashi
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L29/78618 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78696
摘要： To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive layer which is overlapped, over the gate insulating layer, with the gate electrode and one of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added; and an amorphous semiconductor layer which is provided successively between the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added in such a manner that the amorphous semiconductor layer extends over the gate insulating layer from the conductive layer and is in contact with both of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added.
摘要翻译：为了改善薄膜晶体管的导通电流和截止电流的问题，薄膜晶体管包括一对杂质半导体层，赋予一种导电类型的杂质元素，在其间具有间隔; 在所述栅极绝缘层上与所述栅电极和添加了赋予一种导电类型的杂质元素的所述一对杂质半导体层中的一个重叠的导电层; 以及非晶半导体层，其被连续地设置在赋予一种导电类型的杂质元素的一对杂质半导体层之间，使得非晶半导体层从导电层延伸到栅极绝缘层上并且接触同时添加赋予一种导电类型的杂质元素的一对杂质半导体层。

3. 发明授权

US07742351B2 Semiconductor device and electronic device 失效
标题翻译：半导体器件和电子器件
公开(公告)号：US07742351B2
公开(公告)日：2010-06-22
申请号：US11762146
申请日：2007-06-13
申请人： Takayuki Inoue , Yoshiyuki Kurokawa , Takayuki Ikeda
发明人： Takayuki Inoue , Yoshiyuki Kurokawa , Takayuki Ikeda
IPC分类号： G11C7/00
CPC分类号： G11C7/12 , H01L21/84 , H01L27/112 , H01L27/12
摘要： In relation to reading of data in a memory, it is an object to provide a semiconductor device mounted with a low power consumption memory. A semiconductor device including a word line, a bit line, and a memory cell electrically connected to the word line and the bit line, further includes a precharge circuit for making the bit line have an electric potential for reading data stored in the memory cell. The precharge circuit is provided for each bit line and connected to the bit line. Further, the precharge circuit is capable of making each bit line have an electric potential for reading the data stored in the memory cell for each bit line.
摘要翻译：关于在存储器中读取数据，目的是提供一种安装有低功耗存储器的半导体器件。包括字线，位线和电连接到字线和位线的存储单元的半导体器件还包括用于使位线具有用于读取存储在存储单元中的数据的电位的预充电电路。为每个位线提供预充电电路并连接到位线。此外，预充电电路能够使每个位线具有用于读取存储在每个位线的存储单元中的数据的电位。

4. 发明申请

US20090027580A1 Liquid crystal display device and electronic device 有权
标题翻译：液晶显示装置及电子装置
公开(公告)号：US20090027580A1
公开(公告)日：2009-01-29
申请号：US12219020
申请日：2008-07-15
申请人： Yoshiyuki Kurokawa , Takayuki Ikeda , Takeshi Osada , Takayuki Inoue
发明人： Yoshiyuki Kurokawa , Takayuki Ikeda , Takeshi Osada , Takayuki Inoue
IPC分类号： G02F1/136
CPC分类号： G02F1/1368 , G02F1/133707 , G02F2201/40 , H01L27/1222 , H01L29/04 , H01L29/41733 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L29/78669 , H01L29/78678 , H01L29/78696
摘要： It is an object to provide a liquid crystal display device and an electronic device of which aperture ratio increases. The present invention includes a substrate having an insulating surface, a transistor formed over the substrate, a pixel electrode electrically connected to the transistor. The transistor includes a gate electrode, a gate insulating layer over the gate electrode, a semiconductor layer having a microcrystalline structure over the gate insulating layer, and a buffer layer over the semiconductor layer having the microcrystalline structure. The channel width W of the transistor and the channel length L of the transistor satisfy a relation of 0.1≦W/L≦1.7.
摘要翻译：本发明的目的是提供一种开口率增加的液晶显示装置和电子装置。本发明包括具有绝缘表面的衬底，形成在衬底上的晶体管，电连接到晶体管的像素电极。晶体管包括栅电极，栅电极上的栅极绝缘层，在栅极绝缘层上具有微晶结构的半导体层，以及在具有微晶结构的半导体层上的缓冲层。晶体管的沟道宽度W和晶体管的沟道长度L满足0.1 <= W / L <= 1.7的关系。

5. 发明申请

US20080211561A1 Clock Signal Generation Circuit and Semiconductor Device 有权
标题翻译：时钟信号发生电路和半导体器件
公开(公告)号：US20080211561A1
公开(公告)日：2008-09-04
申请号：US12021843
申请日：2008-01-29
申请人： Yoshiyuki Kurokawa , Takayuki Ikeda , Masami Endo , Hiroki Dembo , Daisuke Kawae , Takayuki Inoue , Munehiro Kozuma
发明人： Yoshiyuki Kurokawa , Takayuki Ikeda , Masami Endo , Hiroki Dembo , Daisuke Kawae , Takayuki Inoue , Munehiro Kozuma
IPC分类号： H03K3/00
CPC分类号： G06F7/68 , G06F1/025 , G06F1/04 , H04L7/033
摘要： The semiconductor device is provided with a clock signal generation circuit that includes a reference clock signal generation circuit which generates a first reference clock signal, a first counter circuit which counts the number of rising edges of the first reference clock signal by using the first reference clock signal and a synchronizing signal, a second counter circuit which counts the number of rising edges of the first reference clock signal by using an enumerated value of the first counter circuit, a first divider circuit which divides a frequency of the first reference clock signal by using the enumerated value of the first counter circuit and generates a second reference clock signal, and a second divider circuit which divides a frequency of the second reference clock signal and generates a clock signal.
摘要翻译：半导体器件设置有时钟信号产生电路，其包括产生第一参考时钟信号的参考时钟信号产生电路，第一计数器电路，通过使用第一参考时钟对第一参考时钟信号的上升沿进行计数信号和同步信号;第二计数器电路，通过使用第一计数器电路的枚举值对第一参考时钟信号的上升沿数进行计数;第一除法器电路，其使用第一参考时钟信号的频率进行分频; 第一计数器电路的枚举值并产生第二参考时钟信号，以及第二除法器电路，其分频第二参考时钟信号的频率并产生时钟信号。

6. 发明授权

US08618544B2 Thin film transistor and display device 有权
标题翻译：薄膜晶体管和显示装置
公开(公告)号：US08618544B2
公开(公告)日：2013-12-31
申请号：US13167762
申请日：2011-06-24
申请人： Koji Dairiki , Takayuki Ikeda , Hidekazu Miyairi , Yoshiyuki Kurokawa , Hiromichi Godo , Daisuke Kawae , Takayuki Inoue , Satoshi Kobayashi
发明人： Koji Dairiki , Takayuki Ikeda , Hidekazu Miyairi , Yoshiyuki Kurokawa , Hiromichi Godo , Daisuke Kawae , Takayuki Inoue , Satoshi Kobayashi
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L29/78618 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78696
摘要： To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive layer which is overlapped, over the gate insulating layer, with the gate electrode and one of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added; and an amorphous semiconductor layer which is provided successively between the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added in such a manner that the amorphous semiconductor layer extends over the gate insulating layer from the conductive layer and is in contact with both of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added.
摘要翻译：为了改善薄膜晶体管的导通电流和截止电流的问题，薄膜晶体管包括一对杂质半导体层，赋予一种导电类型的杂质元素，在其间具有间隔; 在所述栅极绝缘层上与所述栅电极和添加了赋予一种导电类型的杂质元素的所述一对杂质半导体层中的一个重叠的导电层; 以及非晶半导体层，其被连续地设置在赋予一种导电类型的杂质元素的一对杂质半导体层之间，使得非晶半导体层从导电层延伸到栅极绝缘层上并且接触同时添加赋予一种导电类型的杂质元素的一对杂质半导体层。

7. 发明授权

US08427280B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08427280B2
公开(公告)日：2013-04-23
申请号：US13177583
申请日：2011-07-07
申请人： Yoshiyuki Kurokawa , Takayuki Ikeda , Masami Endo , Hiroki Dembo , Daisuke Kawae , Takayuki Inoue
发明人： Yoshiyuki Kurokawa , Takayuki Ikeda , Masami Endo , Hiroki Dembo , Daisuke Kawae , Takayuki Inoue
IPC分类号： H04Q5/22
CPC分类号： G06K19/07749
摘要： In a case where an ASK method is used for a communication method between a semiconductor device and a reader/writer, the amplitude of a radio signal is changed by data transmitted from the semiconductor device to the reader/writer when data is not transmitted from the reader/writer to the semiconductor device. Therefore, in some cases, the semiconductor device mistakes data transmitted from the semiconductor device itself for data transmitted from the reader/writer to the semiconductor device. The semiconductor device includes an antenna circuit, a transmission circuit, a reception circuit, and an arithmetic processing circuit. The antenna circuit transmits and receives a radio signal. The transmission circuit outputs to the reception circuit a signal showing whether or not the antenna circuit is transmitting the radio signal.
摘要翻译：在使用ASK方式进行半导体装置与读取器/写入器之间的通信方式的情况下，通过从半导体装置发送到读取器/写入器的数据，无线信号的振幅由数据不从读取器/写入器到半导体器件。因此，在某些情况下，半导体器件将从半导体器件本身发送的数据错误地从读取器/写入器发送到半导体器件的数据。半导体器件包括天线电路，发送电路，接收电路和运算处理电路。天线电路发送和接收无线电信号。发送电路向接收电路输出表示天线电路是否正在发送无线信号的信号。

8. 发明授权

US08781433B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08781433B2
公开(公告)日：2014-07-15
申请号：US13368380
申请日：2012-02-08
申请人： Yoshiyuki Kurokawa , Takayuki Ikeda , Masami Endo , Hiroki Dembo , Daisuke Kawae , Takayuki Inoue , Munehiro Kozuma
发明人： Yoshiyuki Kurokawa , Takayuki Ikeda , Masami Endo , Hiroki Dembo , Daisuke Kawae , Takayuki Inoue , Munehiro Kozuma
IPC分类号： H04B1/28
CPC分类号： G06K19/07749 , G06K7/0008 , G06K19/0716 , G06K2017/0045
摘要： A semiconductor device is provided with a power supply circuit having a function to generate a power supply voltage from a wireless signal and an A/D converter circuit having a function to detect the strength of the wireless signal by an A/D conversion of a voltage generated from the wireless signal. This enables to provide a semiconductor device which does not require replacement of batteries, has few limitations on its physical shape and mass, and has a function to detect a physical position. By formation of the semiconductor device with use of a thin film transistor formed over a plastic substrate, a lightweight semiconductor device, which has flexibility in physical shape and a function to detect a physical location, can be provided at low cost.
摘要翻译：半导体器件具有电源电路，该电源电路具有从无线信号产生电源电压的功能，以及具有通过A / D转换电压来检测无线信号的强度的功能的A / D转换电路由无线信号产生。这能够提供不需要更换电池的半导体器件，其物理形状和质量几乎没有限制，并且具有检测物理位置的功能。通过使用形成在塑料基板上的薄膜晶体管形成半导体器件，可以以低成本提供具有物理形状的灵活性和检测物理位置的功能的轻量级的半导体器件。

9. 发明授权

US07639058B2 Clock signal generation circuit and semiconductor device 有权
标题翻译：时钟信号发生电路和半导体器件
公开(公告)号：US07639058B2
公开(公告)日：2009-12-29
申请号：US12021843
申请日：2008-01-29
申请人： Yoshiyuki Kurokawa , Takayuki Ikeda , Masami Endo , Hiroki Dembo , Daisuke Kawae , Takayuki Inoue , Munehiro Kozuma
发明人： Yoshiyuki Kurokawa , Takayuki Ikeda , Masami Endo , Hiroki Dembo , Daisuke Kawae , Takayuki Inoue , Munehiro Kozuma
IPC分类号： G06F1/04 , H03K3/00
CPC分类号： G06F7/68 , G06F1/025 , G06F1/04 , H04L7/033
摘要： The semiconductor device is provided with a clock signal generation circuit that includes a reference clock signal generation circuit which generates a first reference clock signal, a first counter circuit which counts the number of rising edges of the first reference clock signal by using the first reference clock signal and a synchronizing signal, a second counter circuit which counts the number of rising edges of the first reference clock signal by using an enumerated value of the first counter circuit, a first divider circuit which divides a frequency of the first reference clock signal by using the enumerated value of the first counter circuit and generates a second reference clock signal, and a second divider circuit which divides a frequency of the second reference clock signal and generates a clock signal.
摘要翻译：半导体器件设置有时钟信号产生电路，其包括产生第一参考时钟信号的参考时钟信号产生电路，第一计数器电路，通过使用第一参考时钟对第一参考时钟信号的上升沿进行计数信号和同步信号;第二计数器电路，通过使用第一计数器电路的枚举值对第一参考时钟信号的上升沿数进行计数;第一除法器电路，其使用第一参考时钟信号的频率进行分频; 第一计数器电路的枚举值并产生第二参考时钟信号，以及第二除法器电路，其分频第二参考时钟信号的频率并产生时钟信号。

10. 发明申请

US20080001825A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20080001825A1
公开(公告)日：2008-01-03
申请号：US11812618
申请日：2007-06-20
申请人： Yoshiyuki Kurokawa , Takayuki Ikeda , Masami Endo , Hiroki Dembo , Daisuke Kawae , Takayuki Inoue
发明人： Yoshiyuki Kurokawa , Takayuki Ikeda , Masami Endo , Hiroki Dembo , Daisuke Kawae , Takayuki Inoue
IPC分类号： H01Q1/38
CPC分类号： G06K19/07749
摘要： In a case where an ASK method is used for a communication method between a semiconductor device and a reader/writer, the amplitude of a radio signal is changed by data transmitted from the semiconductor device to the reader/writer when data is not transmitted from the reader/writer to the semiconductor device. Therefore, in some cases, the semiconductor device mistakes data transmitted from the semiconductor device itself for data transmitted from the reader/writer to the semiconductor device. The semiconductor device includes an antenna circuit, a transmission circuit, a reception circuit, and an arithmetic processing circuit. The antenna circuit transmits and receives a radio signal. The transmission circuit outputs to the reception circuit a signal showing whether or not the antenna circuit is transmitting the radio signal.
摘要翻译：在使用ASK方式进行半导体装置与读取器/写入器之间的通信方式的情况下，通过从半导体装置发送到读取器/写入器的数据，无线信号的振幅由数据不从读取器/写入器到半导体器件。因此，在某些情况下，半导体器件将从半导体器件本身发送的数据错误地从读取器/写入器发送到半导体器件的数据。半导体器件包括天线电路，发送电路，接收电路和运算处理电路。天线电路发送和接收无线电信号。发送电路向接收电路输出表示天线电路是否正在发送无线信号的信号。

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