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    • 7. 发明授权
    • Solid state imaging device having impurity concentration on light receiving surface being greater or equal to that on opposing surface
    • 在光接收表面上具有大于或等于相对表面上的杂质浓度的固态成像装置
    • US09570489B2
    • 2017-02-14
    • US13540760
    • 2012-07-03
    • Hideo KidoTakayuki EnomotoHideaki Togashi
    • Hideo KidoTakayuki EnomotoHideaki Togashi
    • H01L27/146
    • H01L27/14614H01L27/1461H01L27/14616H01L27/14621H01L27/14627H01L27/1463H01L27/14636H01L27/1464H01L27/14645H01L27/14689H04N5/378
    • A solid-state imaging device includes: a first photodiode made up of a first first-electroconductive-type semiconductor region formed on a first principal face side of a semiconductor substrate, and a first second-electroconductive-type semiconductor region formed within the semiconductor substrate adjacent to the first first-electroconductive-type semiconductor region; a second photodiode made up of a second first-electroconductive-type semiconductor region formed on a second principal face side of the semiconductor substrate, and a second second-electroconductive-type semiconductor region formed within the semiconductor substrate adjacent to the second first-electroconductive-type semiconductor region; and a gate electrode formed on the first principal face side of the semiconductor substrate; with impurity concentration of a connection face between the second first-electroconductive-type semiconductor region and the second second-electroconductive-type semiconductor region being equal to or greater than impurity concentration of a connection face of an opposite layer of the second first-electroconductive-type semiconductor region of the second second-electroconductive-type semiconductor region.
    • 固态成像装置包括:由形成在半导体衬底的第一主面侧上的第一第一导电型半导体区域和形成在半导体衬底内的第一第二导电型半导体区域构成的第一光电二极管 与第一第一导电型半导体区相邻; 由形成在半导体衬底的第二主面侧上的第二第一导电型半导体区域和与第二第一导电型半导体区域相邻形成的第二第二导电型半导体区域构成的第二光电二极管, 型半导体区域; 以及形成在所述半导体衬底的所述第一主面侧上的栅电极; 第二第一导电型半导体区域和第二第二导电型半导体区域之间的连接面的杂质浓度等于或大于第二第一导电型半导体区域的相对层的连接面的杂质浓度, 第二导电型半导体区域的半导体区域。
    • 9. 发明申请
    • SOLID-STATE IMAGING DEVICE, SOLID-STATE IMAGING DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE
    • 固态成像装置,固态成像装置的制造方法和电子装置
    • US20130015513A1
    • 2013-01-17
    • US13540760
    • 2012-07-03
    • Hideo KidoTakayuki EnomotoHideaki Togashi
    • Hideo KidoTakayuki EnomotoHideaki Togashi
    • H01L27/146H01L31/18
    • H01L27/14614H01L27/1461H01L27/14616H01L27/14621H01L27/14627H01L27/1463H01L27/14636H01L27/1464H01L27/14645H01L27/14689H04N5/378
    • A solid-state imaging device includes: a first photodiode made up of a first first-electroconductive-type semiconductor region formed on a first principal face side of a semiconductor substrate, and a first second-electroconductive-type semiconductor region formed within the semiconductor substrate adjacent to the first first-electroconductive-type semiconductor region; a second photodiode made up of a second first-electroconductive-type semiconductor region formed on a second principal face side of the semiconductor substrate, and a second second-electroconductive-type semiconductor region formed within the semiconductor substrate adjacent to the second first-electroconductive-type semiconductor region; and a gate electrode formed on the first principal face side of the semiconductor substrate; with impurity concentration of a connection face between the second first-electroconductive-type semiconductor region and the second second-electroconductive-type semiconductor region being equal to or greater than impurity concentration of a connection face of an opposite layer of the second first-electroconductive-type semiconductor region of the second second-electroconductive-type semiconductor region.
    • 固态成像装置包括:由形成在半导体衬底的第一主面侧上的第一第一导电型半导体区域和形成在半导体衬底内的第一第二导电型半导体区域构成的第一光电二极管 与第一第一导电型半导体区相邻; 由形成在半导体衬底的第二主面侧上的第二第一导电型半导体区域和与第二第一导电型半导体区域相邻形成的第二第二导电型半导体区域构成的第二光电二极管, 型半导体区域; 以及形成在所述半导体衬底的所述第一主面侧上的栅电极; 第二第一导电型半导体区域和第二第二导电型半导体区域之间的连接面的杂质浓度等于或大于第二第一导电型半导体区域的相对层的连接面的杂质浓度, 第二导电型半导体区域的半导体区域。
    • 10. 发明授权
    • Electronic endoscope system
    • 电子内窥镜系统
    • US06602186B1
    • 2003-08-05
    • US09709708
    • 2000-11-13
    • Hideo SugimotoTakayuki Enomoto
    • Hideo SugimotoTakayuki Enomoto
    • A61B1045
    • G02B23/2484A61B1/00009A61B1/043A61B1/0638A61B1/0646A61B1/0669A61B5/0071A61B5/0084G02B23/2469G02B26/008
    • An electronic endoscope system including a scope unit for capturing an image of an object illuminated by light using an image sensor and an image processing unit that processes the captured image to generate a video signal, is provided with a first illuminating system that illuminates the object with white light, and a second illuminating system that illuminates the object with light having a special wavelength. At least one operable switch that is operated for switching the Illumination system between the first and second systems is provided, and a switching system that switches the illuminating system between the first and second illuminating systems in response to operation of the operable switch. In such a system, the operable switch is provided at a portion accessible to an operator who is operating the scope unit.
    • 一种电子内窥镜系统,具备使用图像传感器拍摄被光照射的被摄体的图像的拍摄单元和处理所述拍摄图像以生成视频信号的图像处理单元的电子内窥镜系统,具有照射所述物体的第一照明系统, 白光,以及用特殊波长的光照射物体的第二照明系统。 提供了用于在第一和第二系统之间切换照明系统的至少一个可操作开关,以及响应于可操作开关的操作而在第一和第二照明系统之间切换照明系统的切换系统。 在这种系统中,可操作开关设置在操作示波器单元的操作者可访问的部分。