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1. 发明授权

US5854133A Method for manufacturing a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US5854133A
公开(公告)日：1998-12-29
申请号：US698200
申请日：1996-08-15
申请人： Takayo Hachiya , Moto Yabuki , Hiroyuki Kamijou
发明人： Takayo Hachiya , Moto Yabuki , Hiroyuki Kamijou
IPC分类号： H01L21/302 , H01L21/304 , H01L21/3065 , H01L21/3105 , H01L21/311 , H01L21/463
CPC分类号： H01L21/31116 , H01L21/304 , H01L21/31053
摘要： According to the present invention, to flatten the surface of a silicon substrate by polishing an element isolating buried insulation film by chemical mechanical polishing, a polysilicon film is formed on the top surface of a projection of a silicon substrate. After that, a buried insulation film is formed all over the silicon substrate along the irregularities thereof. A carbon film is formed on the surface of a recess of the buried insulation film. Using the carbon film as a stopper, the buried insulation film is polished by the chemical mechanical polishing to ease the irregularities of the surface of the polished insulation film. Then the carbon film is removed and, using the polysilicon film as a stopper, the buried insulation film is polished by the chemical mechanical polishing to flatten the surface of the polished insulation film. Thus, the flatness of the buried insulation film can easily be controlled, and the surface of the silicon substrate can always be flattened satisfactorily.
摘要翻译：根据本发明，通过化学机械研磨抛光元件隔离掩埋绝缘膜来使硅衬底的表面平坦化，在硅衬底的突起的顶表面上形成多晶硅膜。之后，沿着其不规则形状在硅衬底上形成掩埋绝缘膜。在掩埋绝缘膜的凹部的表面上形成碳膜。使用碳膜作为止动器，通过化学机械抛光对掩埋绝缘膜进行抛光，以减轻抛光绝缘膜的表面的不规则性。然后除去碳膜，使用多晶硅膜作为止动器，通过化学机械抛光对掩埋绝缘膜进行抛光，使抛光绝缘膜的表面平坦化。因此，可以容易地控制埋入绝缘膜的平坦度，并且能够令人满意地使硅衬底的表面平坦化。

2. 发明授权

US5244835A Method of making contact electrodes of polysilicon in semiconductor device 失效
标题翻译：在半导体器件中制造多晶硅的接触电极的方法
公开(公告)号：US5244835A
公开(公告)日：1993-09-14
申请号：US774875
申请日：1991-10-11
申请人： Takayo Hachiya
发明人： Takayo Hachiya
IPC分类号： H01L21/28 , H01L21/285
CPC分类号： H01L21/28525
摘要： For providing different conductivity type contact electrodes being in contact with different conductivity type semiconductor regions formed in a semiconductor substrate, after an insulating film is formed on the semiconductor substrate, it is selectively etched down to one conductivity type semiconductor region to provide a first contact hole therein. One conductivity type doped polysilicon layer is deposited over the substrate surface to fill the first contact hole therewith. Thereafter, the one conductivity type doped polysilicon layer and the insulating film are selectively removed down to an opposite conductivity type semiconductor region to provide a second contact hole therein. An opposite conductivity type doped polysilicon layer is deposited over the substrate surface to fill the second contact hole therewith. These polysilicon layers are then removed from the surface of the insulating film to provide first and second contact electrodes in the contact holes.
摘要翻译：为了提供与在半导体衬底中形成的不同导电类型的半导体区域接触的不同导电类型的接触电极，在半导体衬底上形成绝缘膜之后，将其选择性地蚀刻到一个导电型半导体区域，以提供第一接触孔其中。一个导电型掺杂多晶硅层沉积在衬底表面上以填充第一接触孔。此后，一个导电型掺杂多晶硅层和绝缘膜被选择性地去除到相反的导电型半导体区域，以在其中提供第二接触孔。在衬底表面上沉积相反的导电型掺杂多晶硅层以填充第二接触孔。然后从绝缘膜的表面去除这些多晶硅层，以在接触孔中提供第一和第二接触电极。

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