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    • 4. 发明授权
    • Air bag-containing cover
    • 含气囊的盖子
    • US5248532A
    • 1993-09-28
    • US623338
    • 1990-12-07
    • Masami SawadaTakayasu ZushiMitsuo Yoshiyasu
    • Masami SawadaTakayasu ZushiMitsuo Yoshiyasu
    • B32B27/08B60R21/2165
    • B60R21/21656B32B27/08Y10T428/1334Y10T428/1341Y10T428/15Y10T428/24983Y10T428/31913Y10T428/31917Y10T428/31924
    • An air bag-containing cover comprising:a soft surface skin layer made of a thermoplastic polymer containing the following ingredients A, B, C and D:ingredient A: a hydrogenated derivative of a block copolymer comprising styrene an conjugated diene,ingredient B: an olefinic resin,ingredient C: polyisobutylene with a viscosity average molecular weight of not greater than 70,000, andingredient D: a hydrocarbon series rubber softening agent with a kinetic viscosity at 40.degree. C. of not greater than 500 cSt and/or polybutene with a number average molecular weight of not greater than 2500, in which blending ratio is:ingredient A=40 to 80% by weight,ingredient B=5 to 30% by weightingredient C=2 to 30% by weightingredient D=0 to 20% by weight, and having a JIS-A hardness according to JIS-K6301 of from 20 to 90, anda rigid core layer comprising an olefinic resin having a modulus in flexure according to JIS-K7203 of from 1000 to 7000 kg/cm.sup.2, in whichthe core layer has a higher hardness than that of the surface skin layer, and the core layer has a portion for easily bursting the cover upon initiation of the air bag operation.
    • 一种含气囊的盖,包括:由含有以下成分A,B,C和D的热塑性聚合物制成的软表皮层:成分A:包含苯乙烯和共轭二烯的嵌段共聚物的氢化衍生物,成分B: 烯烃树脂,成分C:粘均分子量不大于70,000的聚异丁烯,成分D:在40℃下的动力粘度不大于500cSt的烃系橡胶软化剂和/或具有 数均分子量不大于2500,其中混合比为:成分A = 40至80重量%,成分B = 5至30重量%成分C = 2至30重量%成分D = 0至20 重量%,根据JIS-K6301的JIS-A硬度为20〜90,并且包含根据JIS-K7203的挠曲模量为1000〜7000kg / cm 2的烯烃树脂的刚性芯层, 其中芯层具有较高的硬度 并且芯层具有在气囊操作开始时容易使盖破裂的部分。
    • 10. 发明授权
    • Vertical MOSFET and method of manufacturing thereof
    • 垂直MOSFET及其制造方法
    • US06133099A
    • 2000-10-17
    • US18441
    • 1997-02-04
    • Masami Sawada
    • Masami Sawada
    • H01L21/316H01L21/336H01L29/78
    • H01L21/316H01L29/78
    • A vertical MOSFET of the present invention comprises a semiconductor wafer having a groove selectively etching in the semiconductor wafer to have substantially vertical side walls. The groove is oxidized using local oxidation of silicon (LOCOS) at 1100.degree. C. or greater to form a LOCOS film on the semiconductor wafer in the groove so that a whole side surface of said semiconductor wafer exposed by the groove is substantially vertical and essentially flat. The LOCOS film in the groove is removed and a thermal insulating film on the semiconductor wafer in the groove. Then a gate electrode made of a conductive film is formed on the thermal insulating film. An interlayer insulating film is formed on the gate electrode and a source electrode is formed in ohmic contact with a source region and a base region. A drain electrode is connected to the opposite side of the semiconductor wafer. As a result, the vertical MOSFET of the present invention has improved on-state resistance, reduced parasitic capacitance and higher breakdown voltage.
    • 本发明的垂直MOSFET包括半导体晶片,其具有在半导体晶片中选择性蚀刻的槽,以具有基本垂直的侧壁。 使用硅(LOCOS)的局部氧化在1100℃或更高的温度下使凹槽氧化,以在凹槽中的半导体晶片上形成LOCOS膜,使得由凹槽暴露的所述半导体晶片的整个侧表面基本上是垂直的并且基本上 平面。 去除凹槽中的LOCOS膜,并在沟槽中的半导体晶片上除去绝热膜。 然后在绝热膜上形成由导电膜制成的栅电极。 在栅电极上形成层间绝缘膜,源极与源极区域和基极区域欧姆接触形成。 漏电极连接到半导体晶片的相对侧。 结果,本发明的垂直MOSFET具有改善的导通电阻,降低的寄生电容和较高的击穿电压。