专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US6100760A Variable gain amplifier 失效
标题翻译：可变增益放大器
公开(公告)号：US6100760A
公开(公告)日：2000-08-08
申请号：US90240
申请日：1998-06-04
申请人： Takaya Maruyama , Hisayasu Satoh , Takahiro Miki
发明人： Takaya Maruyama , Hisayasu Satoh , Takahiro Miki
IPC分类号： H03G3/10 , H03G1/00 , H03F3/45
CPC分类号： H03G1/0023
摘要： Current controllers (C1 and C2) are connected to a power source (Vcc) in common through a load (L). Inputs of the current controllers (C1 and C2) are connected to outputs of current amplifier parts (A1 and A2) respectively, and the current amplifier parts (A1 and A2) are connected to a ground level (GND) through constant current sources (CS1 and CS2) respectively. The current amplifier part (A1) has a high gain, and the current amplifier part (A2) has a low gain. Thus, a variable gain amplifier whose input range does not abruptly change with respect to a control voltage is obtained, and a variable gain amplifier widening its input range is provided.
摘要翻译：电流控制器（C1和C2）通过负载（L）共同连接到电源（Vcc）。电流控制器（C1和C2）的输入分别连接到电流放大器部件（A1和A2）的输出端，并且电流放大器部件（A1和A2）通过恒定电流源（CS1）连接到地电平（GND）和CS2）。电流放大器部分（A1）具有高增益，并且电流放大器部分（A2）具有低增益。因此，获得其输入范围相对于控制电压没有突然变化的可变增益放大器，并且提供扩大其输入范围的可变增益放大器。

2. 发明授权

US06717469B2 Gain control circuit for controlling a gain in a variable gain cell 失效
标题翻译：用于控制可变增益单元中的增益的增益控制电路
公开(公告)号：US06717469B2
公开(公告)日：2004-04-06
申请号：US10187622
申请日：2002-07-03
申请人： Takaya Maruyama , Hisayasu Satoh
发明人： Takaya Maruyama , Hisayasu Satoh
IPC分类号： H03F345
CPC分类号： H03F3/45085 , H03G1/0023 , H03G7/06
摘要： A differential amplifier of an exponentially-changing current producing circuit has a pair of transistors of which bases are connected to each other through a differential base resistor of a resistance value R, a control current of a value K2×T−(K1×K2×T×Vcont/K3) produced from a gain control current (K1·Vcont), a gain reference current (K3) and a bias current (K2·T) is fed to the base of one transistor, and an exponentially-changing current is output. Vcont denotes a gain control voltage, K1, K2 and K3 are constant, and T denotes an absolute temperature. An input signal is amplified in a variable gain cell at a gain corresponding to the exponentially-changing current, and an amplified signal is output. Therefore, the gain in the variable gain cell is controlled according to the exponentially-changing current.
摘要翻译：指数变化电流产生电路的差分放大器具有一对晶体管，其基极通过电阻值R的差分基极电阻彼此连接，由K2xT-（K1xK2xTxVcont / K3）产生的控制电流由增益控制电流（K1.Vcont），增益参考电流（K3）和偏置电流（K2.T）被馈送到一个晶体管的基极，并且输出指数变化的电流。 Vcont表示增益控制电压，K1，K2和K3为常数，T表示绝对温度。输入信号在可变增益单元中以与指数变化电流对应的增益放大，并输出放大信号。因此，根据指数变化的电流来控制可变增益单元的增益。

3. 发明授权

US06313704B1 Multi-stage signal amplifying circuit 失效
标题翻译：多级信号放大电路
公开(公告)号：US06313704B1
公开(公告)日：2001-11-06
申请号：US09632269
申请日：2000-08-03
申请人： Takaya Maruyama , Hisayasu Satoh
发明人： Takaya Maruyama , Hisayasu Satoh
IPC分类号： H03F345
CPC分类号： H03F3/45475 , H03F3/45973
摘要： In cases where a direct-current offset occurs in a differential signal output from a differential signal amplifier when a differential input signal is differentially amplified in a series of differential signal amplifiers, a direct-current offset component amplified is included in a differential signal output from a particular differential signal amplifier. To suppress the direct-current offset component, the differential signal is, at first, differentially amplified in a pair of transistors of a detecting amplifier, the direct-current offset component is extracted in a low-pass filter from the differential signal amplified, and compensating currents produced according to the direct-current offset component are input to a differential signal amplifier preceding to the particular differential signal amplifier to adjust the direct-current offset component of the differential signal to zero. Because the pair of transistors of the detecting amplifier inevitably have a high input impedance, the differential signal can be directly received in the detecting amplifier, so that the low-pass filter can be formed on a minimized layout area without considering its input impedance. Therefore, a multi-stage signal amplifying circuit can be manufactured on a small layout area while preventing a voltage level of the differential signal from exceeding an input dynamic range of the differential signal amplifiers.
摘要翻译：在差分信号放大器的差分输入信号被差分放大时，从差分信号放大器输出的差分信号中发生直流偏移的情况下，放大的直流偏移分量被包含在从一个特定的差分信号放大器。为了抑制直流偏移分量，差分信号首先在检测放大器的一对晶体管中进行差分放大，从放大的差分信号在低通滤波器中提取直流偏移分量，以及根据直流偏移分量产生的补偿电流被输入到特定差分信号放大器之前的差分信号放大器，以将差分信号的直流偏移分量调整为零。由于检测放大器的一对晶体管不可避免地具有高的输入阻抗，所以可以将差分信号直接接收在检测放大器中，使得低通滤波器可以在最小化的布局区域形成，而不考虑其输入阻抗。因此，可以在小布局区域上制造多级信号放大电路，同时防止差分信号的电压电平超过差分信号放大器的输入动态范围。

4. 发明授权

US08320854B2 Semiconductor device for signal amplification 有权
公开(公告)号：US08320854B2
公开(公告)日：2012-11-27
申请号：US12721261
申请日：2010-03-10
申请人： Masakazu Mizokami , Takaya Maruyama , Kazuaki Hori
发明人： Masakazu Mizokami , Takaya Maruyama , Kazuaki Hori
IPC分类号： H01Q11/12 , H04B1/04
摘要： A semiconductor device for transmitting-signal amplification which has a fine resolution, a high dynamic range, a small occupied area, and low power consumption, is realized. An input signal amplitude is reduced every one half by a ladder network, and a transconductance amplifier stage is arranged corresponding to each node of the ladder network. An output of the transconductance amplifier stage is coupled to an output signal line in common. According to a control word WC , the transconductance amplifier stage is enabled selectively, and the output current which appears in the output signal line is added.

5. 发明申请

US20100231305A1 SEMICONDUCTOR DEVICE FOR SIGNAL AMPLIFICATION 有权
标题翻译：用于信号放大的半导体器件
公开(公告)号：US20100231305A1
公开(公告)日：2010-09-16
申请号：US12721261
申请日：2010-03-10
申请人： Masakazu Mizokami , Takaya Maruyama , Kazuaki Hori
发明人： Masakazu Mizokami , Takaya Maruyama , Kazuaki Hori
IPC分类号： H03F3/68
CPC分类号： H03F3/245 , H03F1/301 , H03F3/195 , H03F3/45179 , H03F2200/222 , H03F2200/336 , H03F2200/447 , H03F2200/451 , H03F2200/456 , H03F2200/534 , H03F2203/45544 , H03F2203/45604 , H03F2203/45616 , H03F2203/45728 , H03G1/0088 , H03G3/3042
摘要： A semiconductor device for transmitting-signal amplification which has a fine resolution, a high dynamic range, a small occupied area, and low power consumption, is realized. An input signal amplitude is reduced every one half by a ladder network, and a transconductance amplifier stage is arranged corresponding to each node of the ladder network. An output of the transconductance amplifier stage is coupled to an output signal line in common. According to a control word WC , the transconductance amplifier stage is enabled selectively, and the output current which appears in the output signal line is added.
摘要翻译：实现了具有精细分辨率，高动态范围，小占用面积和低功耗的用于发射信号放大的半导体器件。输入信号幅度由梯形网络每半衰减一次，跨梯级放大级与梯形网络的每个节点相对应设置。跨导放大器级的输出共同地耦合到输出信号线。根据控制字WC <21：0>，跨导放大器级选择性地被使能，并且添加出现在输出信号线中的输出电流。

6. 发明授权

US08571496B2 Semiconductor device for signal amplification 有权
标题翻译：用于信号放大的半导体器件
公开(公告)号：US08571496B2
公开(公告)日：2013-10-29
申请号：US12721261
申请日：2010-03-10
申请人： Masakazu Mizokami , Takaya Maruyama , Kazuaki Hori
发明人： Masakazu Mizokami , Takaya Maruyama , Kazuaki Hori
IPC分类号： H01Q11/12 , H04B1/04
CPC分类号： H03F3/245 , H03F1/301 , H03F3/195 , H03F3/45179 , H03F2200/222 , H03F2200/336 , H03F2200/447 , H03F2200/451 , H03F2200/456 , H03F2200/534 , H03F2203/45544 , H03F2203/45604 , H03F2203/45616 , H03F2203/45728 , H03G1/0088 , H03G3/3042
摘要： A semiconductor device for transmitting-signal amplification which has a fine resolution, a high dynamic range, a small occupied area, and low power consumption, is realized. An input signal amplitude is reduced every one half by a ladder network, and a transconductance amplifier stage is arranged corresponding to each node of the ladder network. An output of the transconductance amplifier stage is coupled to an output signal line in common. According to a control word WC , the transconductance amplifier stage is enabled selectively, and the output current which appears in the output signal line is added.
摘要翻译：实现了具有精细分辨率，高动态范围，小占用面积和低功耗的用于发射信号放大的半导体器件。输入信号幅度由梯形网络每半衰减一次，跨梯级放大级与梯形网络的每个节点相对应设置。跨导放大器级的输出共同地耦合到输出信号线。根据控制字WC <21：0>，跨导放大器级选择性地被使能，并且添加出现在输出信号线中的输出电流。

7. 发明申请

US20090068976A1 FILTER CIRCUIT AND COMMUNICATION SEMICONDUCTOR DEVICE USING THE SAME 有权
标题翻译：滤波电路和通信半导体器件
公开(公告)号：US20090068976A1
公开(公告)日：2009-03-12
申请号：US12197703
申请日：2008-08-25
申请人： Tomohiro SANO , Takaya Maruyama , Hisayasu Sato
发明人： Tomohiro SANO , Takaya Maruyama , Hisayasu Sato
IPC分类号： H04B1/16 , H02M11/00
CPC分类号： H02M3/07 , H03H15/00
摘要： The present invention intends to provide a filter circuit in which an area occupied by the circuit can be reduced by suppressing the scale of its circuit configuration while a predetermined vicinity disturbance wave rejection ratio is maintained and a communication semiconductor device using the same, the filter circuit filtering an analog signal and including a voltage/current conversion circuit for converting the analog signal from voltage to current, and a capacitor array which executes signal processing by charging/discharging the current converted by the voltage/current conversion circuit to/from plural capacitors, the capacitor array being so constructed that the plural capacitors are divided to plural stages so that signals averaged by the capacitor on a preceding stage are accumulated in the capacitor on a next stage successively.
摘要翻译：本发明旨在提供一种滤波电路，其中通过在保持预定的邻近干扰波抑制比的同时抑制其电路结构的规模并且使用该滤波电路的通信半导体器件，可以减小电路占据的面积，滤波电路滤波模拟信号，并包括用于将模拟信号从电压转换成电流的电压/电流转换电路;以及电容器阵列，其通过从/从多个电容器转换电压/电流转换电路的电流进行充电/放电来执行信号处理，电容器阵列被构造成使得多个电容器被分成多个级，使得在前一级上的电容器平均的信号在下一级依次累积在电容器中。

8. 发明申请

US20050208922A1 Frequency mixer preventing degradation in linearity on amplitude of input signal 失效
标题翻译：混频器防止输入信号幅度的线性降低
公开(公告)号：US20050208922A1
公开(公告)日：2005-09-22
申请号：US11083242
申请日：2005-03-18
申请人： Takaya Maruyama , Hisayasu Sato
发明人： Takaya Maruyama , Hisayasu Sato
IPC分类号： H03F3/45 , H03D7/12 , H03D7/14 , H04B1/26
CPC分类号： H03D7/1441 , H03D7/1458 , H03D7/1491 , H03D2200/0033 , H03D2200/0043
摘要： A frequency mixer includes a first N channel MOS transistor, second and third N channel MOS transistors constituting a local oscillator signal differential pair, and having substantially identical properties, a first load, and a second load. The first N channel MOS transistor receives an RF signal at its gate. A local oscillator signal is applied to the gates of the second and third N channel MOS transistors. The drain current of the second and third N channel MOS transistors is output to the drain of the first N channel MOS transistor. An amplitude-current conversion circuit receives the RF signal and provides an output current to the drain of the first N channel MOS transistor to decrease monotonously the output current with respect to the amplitude of the RF signal.
摘要翻译：混频器包括构成本地振荡器信号差分对的第一N沟道MOS晶体管，第二和第三N沟道MOS晶体管，并且具有基本相同的特性，第一负载和第二负载。第一N沟道MOS晶体管在其栅极接收RF信号。本地振荡器信号施加到第二和第三N沟道MOS晶体管的栅极。第二和第三N沟道MOS晶体管的漏极电流输出到第一N沟道MOS晶体管的漏极。振幅电流转换电路接收RF信号并向第一N沟道MOS晶体管的漏极提供输出电流，以相对于RF信号的幅度单调减小输出电流。

9. 发明授权

US5932926A Microwave semiconductor integrated circuit 失效
标题翻译：微波半导体集成电路
公开(公告)号：US5932926A
公开(公告)日：1999-08-03
申请号：US795790
申请日：1997-02-05
申请人： Takaya Maruyama , Takahide Ishikawa , Noriyuki Tanino
发明人： Takaya Maruyama , Takahide Ishikawa , Noriyuki Tanino
IPC分类号： H01L23/12 , H01L23/66 , H01L23/34
CPC分类号： H01L23/66 , H01L2223/6627 , H01L2224/45144 , H01L2224/48227 , H01L2924/1903
摘要： A microwave semiconductor integrated circuit having high isolation includes a wiring-side substrate including a transmission line in slots at a surface; an element-side substrate having an active element on a surface, the transmission line being embedded in the wiring-side substrate; and metal bumps electrically connecting the transmission line embedded in the wiring-side substrate to electrodes of the active element on the element-side substrate. Therefore, a connection between a transmission line and electrodes of an element, such as an FET or the like, can be easily realized without being affected by a difference in positional level between the transmission line and the electrodes. In addition, the element on the element-side substrate is not adversely affected by the subsequent fabrication of the slots and wiring layers and, therefore, the reliability of the integrated circuit is not adversely affected. Furthermore, since the element and the transmission line are mounted on separate substrates, focusing is easy during the exposure for forming masks used for etching the slots and wiring layers in the wiring-side substrate because there is no unevenness within the substrate surface, facilitating the fabrication of masks.
摘要翻译：具有高隔离度的微波半导体集成电路包括在表面的槽中包括传输线的布线侧基板; 元件侧基板，其表面上具有有源元件，所述传输线嵌入在所述布线侧基板中; 以及金属凸块将嵌入在布线侧基板中的传输线与元件侧基板上的有源元件的电极电连接。因此，可以容易地实现传输线和诸如FET等的元件的电极之间的连接，而不受传输线和电极之间的位置水平差的影响。此外，元件侧基板上的元件不受后续制造槽和布线层的不利影响，因此集成电路的可靠性不受不利影响。此外，由于元件和传输线安装在单独的基板上，因为在基板表面中没有不均匀性，因此在用于形成用于蚀刻布线侧基板中的槽和布线层的掩模的曝光期间，聚焦容易，制作面具。

10. 发明申请

US20120092065A1 FILTER CIRCUIT AND COMMUNICATION SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
标题翻译：滤波电路和通信半导体器件
公开(公告)号：US20120092065A1
公开(公告)日：2012-04-19
申请号：US13335284
申请日：2011-12-22
申请人： Tomohiro SANO , Takaya Maruyama , Hisayasu Sato
发明人： Tomohiro SANO , Takaya Maruyama , Hisayasu Sato
IPC分类号： H03B1/04
CPC分类号： H02M3/07 , H03H15/00
摘要： The present invention intends to provide a filter circuit in which an area occupied by the circuit can be reduced by suppressing the scale of its circuit configuration while a predetermined vicinity disturbance wave rejection ratio is maintained and a communication semiconductor device using the same, the filter circuit filtering an analog signal and including a voltage/current conversion circuit for converting the analog signal from voltage to current, and a capacitor array which executes signal processing by charging/discharging the current converted by the voltage/current conversion circuit to/from plural capacitors, the capacitor array being so constructed that the plural capacitors are divided to plural stages so that signals averaged by the capacitor on a preceding stage are accumulated in the capacitor on a next stage successively.
摘要翻译：本发明旨在提供一种滤波电路，其中通过在保持预定的邻近干扰波抑制比的同时抑制其电路结构的规模并且使用该滤波电路的通信半导体器件，可以减小电路占据的面积，滤波电路滤波模拟信号，并包括用于将模拟信号从电压转换成电流的电压/电流转换电路;以及电容器阵列，其通过从/从多个电容器转换电压/电流转换电路的电流进行充电/放电来执行信号处理，电容器阵列被构造成使得多个电容器被分成多个级，使得在前一级上的电容器平均的信号在下一级依次累积在电容器中。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式