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1. 发明授权

US4603208A Certain polyprenyl intermediates 失效
标题翻译：某些聚异戊烯中间体
公开(公告)号：US4603208A
公开(公告)日：1986-07-29
申请号：US465483
申请日：1983-02-10
申请人： Takashi Onishi , Shigeaki Suzuki , Fumio Mori , Tetsuo Takigawa , Yoshiji Fujita , Masao Mizuno , Takashi Nishida
发明人： Takashi Onishi , Shigeaki Suzuki , Fumio Mori , Tetsuo Takigawa , Yoshiji Fujita , Masao Mizuno , Takashi Nishida
IPC分类号： C07C69/767 , C07C317/00 , C07C317/24 , C07D213/70 , C07D213/71 , C07D309/12 , C07D317/18 , C07D405/12 , C07D417/12 , C07F7/18 , C07C69/78 , C07C147/103
CPC分类号： C07D405/12 , C07C317/00 , C07C321/00 , C07D309/12 , C07D317/18 , C07D417/12 , C07F7/1852
摘要： Novel polyprenyl compounds have the general formula: ##STR1## represents a cis-isoprene unit, n is an integer of 11-19, Z.sup.1 is --CH.sub.2 OH or a functional precursor thereof, and either one of R.sup.1 and R.sup.2 is a hydrogen atom and the other is --S(O).sub.m R.sup.3 in which m is an integer of 0 (zero), 1 or 2 and R.sup.3 is a phenyl, naphthyl, pyridyl or thiazolinyl group or such group substituted with at least one lower alkyl and/or halogen substituent. The topic novel polyprenyl compounds can be synthesized from derivatives of the polyprenol which is obtainable from leaves of Ginkgo biloba or Cedrus deodara, among others, by extraction, if necessary followed by hydrolytic treatment. The novel polyprenyl compounds can be converted to mammalian dolichols or precursors thereof by reductive elimination of the --S(O).sub.m R.sup.3 group.
摘要翻译：新颖的聚异戊二烯化合物具有以下通式：其中n为11〜19的整数，Z 1为-CH 2 OH的整数，或其功能性前体，R 1和R 2中的任一个是氢原子，另一个是-S（O）m R 3，其中m是0（0），1或2的整数，并且R 3是苯基，萘基，吡啶基或噻唑啉基或该基团被至少一个低级烷基和/或卤素取代基取代。主题新颖的聚异戊二烯基化合物可以由聚乙二醇的衍生物合成，其可以通过提取，如果需要然后进行水解处理，可以从银杏叶或塞德斯酵母的叶获得。新的聚异戊烯基化合物可以通过-S（O）m R 3基团的还原性消除而转化为哺乳动物多烯醇或其前体。

2. 发明授权

US4886916A Process for preparing sulfone compounds 失效
标题翻译：砜类化合物的制备方法
公开(公告)号：US4886916A
公开(公告)日：1989-12-12
申请号：US168408
申请日：1988-03-15
申请人： Takashi Onishi , Shigeaki Suzuki , Toshiki Mori , Hiroshi Fujii , Yoshiji Fujita
发明人： Takashi Onishi , Shigeaki Suzuki , Toshiki Mori , Hiroshi Fujii , Yoshiji Fujita
IPC分类号： C07C20060101 , C07C317/04 , C07C317/14
CPC分类号： C07C317/00
摘要： A process for preparing an allylic sulfone of the following general formula (I), ##STR1## wherein, R is a hydrogen atom or a lower alkyl group, and containing both cis and trans isomers, by a reaction of a compound selected from the group consisting of geranyl chloride, neryl chloride, and linalyl chloride with a phenyl sulfinate of the following general formula (III), ##STR2## wherein, R is a hydrogen atom, or a lower alkyl group, and M is a sodium atom or potassium atom, in the presence of (i) tetralkylammonium iodide in an anhydrous condition or (ii) a zinc halide and an iodide.

3. 发明授权

US4827056A Process for preparing chlorinated olefins 失效
标题翻译：氯化烯烃的制备方法
公开(公告)号：US4827056A
公开(公告)日：1989-05-02
申请号：US164917
申请日：1988-03-07
申请人： Shigeaki Suzuki , Toshiki Mori , Takashi Onishi , Yoshiji Fujita
发明人： Shigeaki Suzuki , Toshiki Mori , Takashi Onishi , Yoshiji Fujita
IPC分类号： C07C17/00 , C07C17/02 , C07C17/10 , C07C21/04 , C07C21/19 , C07C22/04 , C07C41/00 , C07C41/22 , C07C43/17 , C07C43/174 , C07C67/00 , C07C67/287 , C07C69/025
CPC分类号： C07C17/00 , C07C41/22 , C07C67/287 , C07C67/58
摘要： Chlorinated olefins of general formula (I), ##STR1## wherein R is an alkyl, aralkyl, or alkenyl group substituted or not substituted by a lower acyloxy, lower alkyloxy, alkenyloxy or benzyloxy group, are prepared by the reaction of hypochlorous acid, generated by the reaction of sodium hypochlorite with a strong mineral acid, and olefins of general formula (II), ##STR2## wherein R is the same as defined above, in a two-phase system of water phase and organic solvent phase, not being miscible with water.

4. 发明授权

US4924030A Process for preparing cyclic terpenoids 失效
标题翻译：制备环状萜类化合物的方法
公开(公告)号：US4924030A
公开(公告)日：1990-05-08
申请号：US164909
申请日：1988-03-07
申请人： Takashi Onishi , Shigeaki Suzuki , Toshiki Mori , Yoshiji Fujita
发明人： Takashi Onishi , Shigeaki Suzuki , Toshiki Mori , Yoshiji Fujita
IPC分类号： C07C315/04 , C07B37/08 , C07C20060101 , C07C67/00 , C07C313/00 , C07C315/06 , C07C317/14
CPC分类号： C07C317/00
摘要： A present invention provides a process for preparing a mixture of cyclic terpenoids of general formula (I), ##STR1## wherein R is a hydrogen atom or a lower alkyl group, and general formula (II), ##STR2## wherein R is defined as above, containing (I) predominant over (II) by the reaction of an acid with a cyclic terpenoid of general formula (II), or a mixture of cyclic terpenoids of general formulas (I) and (II), containing (II) predominant over (I).

5. 发明授权

US4745229A Process for preparing .alpha., .beta.-unsaturated aldehydes 失效
标题翻译：制备α，β-不饱和醛的方法
公开(公告)号：US4745229A
公开(公告)日：1988-05-17
申请号：US15095
申请日：1987-02-13
申请人： Junzo Otera , Shigeaki Suzuki , Takashi Onishi , Yoshiji Fujita
发明人： Junzo Otera , Shigeaki Suzuki , Takashi Onishi , Yoshiji Fujita
IPC分类号： C07C45/27 , C07C45/28 , C07C45/56 , C07C47/21 , C07C69/145
CPC分类号： C07C47/21 , C07C45/27 , C07C45/28 , C07C45/56 , C07C67/29
摘要： A process for preparing .alpha.,.beta.-unsaturated aldehydes of the general formula (I) ##STR1## in which R.sup.1, R.sup.2 and R.sup.3 are independently a hydrogen atom, or an alkyl or alkenyl group with or without being substituted with a lower acyloxy group. The aldehyde of the general formula (I) is prepared by reaction between an allylic chloride of the following general formula (IIa) ##STR2## in which R.sup.1, R.sup.2 and R.sup.3 have, respectively, the same meanings as defined above, and an amine oxide selected from the group consisting of tri(lower alkyl)amine N-oxides of the formula,R.sub.3.sup.4 N.sup.+ O.sup.-,in which R.sup.4 represents a lower alkyl group having from 2 to 4 carbon atoms, and N-lower alkylmorpholine N-oxides of the following formula ##STR3## in which R.sup.5 represents a lower alkyl group having from 1 to 4 carbon atoms. Alternatively, the aldehyde of the formula (I) is obtained by reaction between an allylic chloride of the following general formula (IIb) ##STR4## in which R.sup.1, R.sup.2 and R.sup.3 have, respectively, the same meanings as defined above, and an amine oxide selected from the group consisting of tri(lower alkyl)amine N-oxides of the formula,R.sub.3.sup.4 N.sup.+ O.sup.-,in which R.sup.4 has the same meaning as defined above, and N-lower alkylmorpholine N-oxides of the following formula ##STR5## in which R.sup.5 has the same meaning as defined above, in the presence of an alkali metal iodide or a copper halide.
摘要翻译：制备通式（I）的α，β-不饱和醛的方法，其中R 1，R 2和R 3独立地为氢原子，或具有或不具有低级烷基或烯基的烷基或烯基酰氧基。通式（I）的醛通过以下通式（IIa）的烯丙基氯与其中R 1，R 2和R 3分别具有与上述相同的含义和选自下列的三（低级烷基）胺N-氧化物的氧化胺，其中R 4表示具有2至4个碳原子的低级烷基的式R 34 N + O-，和N-低级烷基吗啉N- 下式“IMAGE”的氧化物，其中R 5表示具有1至4个碳原子的低级烷基。或者，式（I）的醛通过以下通式（IIb）的烯丙基氯（IIb）（其中R1，R2和R3分别具有与上述相同的含义）和选自下式的三（低级烷基）胺N-氧化物的氧化胺，其中R 4具有与上述相同的含义的R 34 N + O-，以及下述的N-低级烷基吗啉N-氧化物在碱金属碘化物或卤化铜存在下，其中R 5具有与上述相同的含义的式“IMAGE”。

6. 发明授权

US4336202A 1,3-Cyclohexanedione derivatives 失效
标题翻译： 1,3-环己二酮衍生物
公开(公告)号：US4336202A
公开(公告)日：1982-06-22
申请号：US264463
申请日：1981-05-18
申请人： Sigeru Torii , Kenji Uneyama , Takashi Onishi , Yoshiji Fujita , Michihiro Ishiguro , Takashi Nishida
发明人： Sigeru Torii , Kenji Uneyama , Takashi Onishi , Yoshiji Fujita , Michihiro Ishiguro , Takashi Nishida
IPC分类号： C07C49/517 , C07D209/08 , C07D307/83 , C07C49/403
CPC分类号： C07D307/83 , C07C49/517 , C07D209/08
摘要： Novel cyclohexanone derivatives of general formula: ##STR1## (wherein R.sup.1 is a hydrocarbon group of 1 to 15 carbon atoms) and new cyclohexanone derivatives of general formula: ##STR2## (wherein R.sup.1 and R.sup.2 each is a hydrocarbon group of 1 to 15 carbon atoms) are produced by an electrooxidative coupling of 1,3-cyclohexanedione with a vinyl ether of general formula:CH.sub.2 .dbd.CH-O-R.sup.1(wherein R.sup.1 is as defined above) in the presence or absence of an alcohol of general formula:R.sup.2 OH(wherein R.sup.2 is as defined above). These new cyclohexanone derivatives can be easily converted to N-substituted or unsubstituted-4-oxo-4,5,6,7-tetrahydroindoles, which are of value as intermediates for the production of N-substituted or unsubstituted-4-hydroxyindoles and, thence, to pindolol and its analogs.
摘要翻译：新型的通式为：IMA（其中R 1为1至15个碳原子的烃基）的环己酮衍生物和通式为新的环己酮衍生物：其中R1和R2各自为1至15个碳原子的烃基原子）通过在通式R 2 OH的存在或不存在的情况下，通过1,3-环己二酮与通式为CH 2 = CH-O-R 1（其中R 1如上定义）的乙烯基醚的电氧偶合而产生（其中R2如上所定义）。这些新的环己酮衍生物可以容易地转化成N-取代或未取代的-4-氧代-4,5,6,7-四氢吲哚，它们作为制备N-取代或未取代的4-羟基吲哚的中间体，因此，对吲哚洛尔及其类似物。

7. 发明申请

US20100052171A1 CU WIRE IN SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF 审中-公开
标题翻译： CU线上半导体器件及其制造方法
公开(公告)号：US20100052171A1
公开(公告)日：2010-03-04
申请号：US12515538
申请日：2007-11-19
申请人： Hirotaka Ito , Takashi Onishi , Mikako Takeda , Masao Mizuno
发明人： Hirotaka Ito , Takashi Onishi , Mikako Takeda , Masao Mizuno
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： C22C9/00 , C23C14/024 , C23C14/165 , H01L21/2855 , H01L21/76843 , H01L21/76873 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A Cu wire in a semiconductor device according to the present invention is a Cu wire embedded into wiring gutters or interlayer connective channels formed in an insulating film on a semiconductor substrate and the Cu wire comprises: a barrier layer comprising TaN formed on the wiring gutter side or the interlayer connective channel side; and a wire main body comprising Cu comprising one or more elements selected from the group consisting of Pt, In, Ti, Nb, B, Fe, V, Zr, Hf, Ga, Tl, Ru, Re, and Os in a total content of 0.05 to 3.0 atomic percent. The Cu wire in a semiconductor device according to the present invention is excellent in adhesiveness between the wire main body and the barrier layer.
摘要翻译：根据本发明的半导体器件中的Cu线是嵌入到形成在半导体衬底上的绝缘膜中的布线沟或层间连接沟道中的Cu线，并且所述Cu线包括：形成在布线槽侧的TaN的阻挡层或层间连接通道侧; 以及包含Cu，其包含选自Pt，In，Ti，Nb，B，Fe，V，Zr，Hf，Ga，Tl，Ru，Re和Os中的一种以上的元素，总含量为0.05〜3.0原子％。根据本发明的半导体器件中的Cu线在线主体和阻挡层之间的粘附性优异。

8. 发明授权

US07928573B2 Metal thin film for interconnection of semiconductor device 有权
标题翻译：用于半导体器件互连的金属薄膜
公开(公告)号：US07928573B2
公开(公告)日：2011-04-19
申请号：US11465626
申请日：2006-08-18
申请人： Takashi Onishi , Masao Mizuno , Mikako Takeda
发明人： Takashi Onishi , Masao Mizuno , Mikako Takeda
IPC分类号： H01L23/48
CPC分类号： H01L23/53233 , H01L21/2855 , H01L21/76882 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： A metal thin film used in fabricating a damascene interconnection of a semiconductor device which exhibits excellent high temperature fluidity during high pressure annealing, and which can fabricate an interconnection for a semiconductor device which has a low electric resistance and stable high quality is provided. Also provided is an interconnection for a semiconductor device. More specifically, a metal thin film for use as an interconnection of a semiconductor device comprising a Cu alloy containing N at a content of not less than 0.4 at % to not more than 2.0 at %; and an interconnection for a semiconductor device fabricated by forming the metal thin film on an insulator film which is formed on a semiconductor substrate and which has grooves formed therein, and filling the metal thin film in the interior of the grooves by a high pressure annealing process are provided.
摘要翻译：提供了用于制造半导体器件的镶嵌互连的金属薄膜，其在高压退火期间表现出优异的高温流动性，并且可以制造具有低电阻和稳定高质量的半导体器件的互连。还提供了用于半导体器件的互连。更具体地说，一种用作半导体器件的互连的金属薄膜，其包含含有不小于0.4原子％至不大于2.0原子％的含有N的Cu合金; 以及通过在形成在半导体衬底上并形成有凹槽的绝缘体膜上形成金属薄膜而制造的半导体器件的互连，并且通过高压退火工艺在槽内填充金属薄膜被提供。

9. 发明授权

US07538027B2 Fabrication method for semiconductor interconnections 有权
标题翻译：半导体互连的制造方法
公开(公告)号：US07538027B2
公开(公告)日：2009-05-26
申请号：US11532796
申请日：2006-09-18
申请人： Takashi Onishi , Masao Mizuno , Mikako Takeda , Susumu Tsukimoto , Tatsuya Kabe , Toshifumi Morita , Miki Moriyama , Kazuhiro Ito , Masanori Murakami
发明人： Takashi Onishi , Masao Mizuno , Mikako Takeda , Susumu Tsukimoto , Tatsuya Kabe , Toshifumi Morita , Miki Moriyama , Kazuhiro Ito , Masanori Murakami
IPC分类号： H01L21/4763
CPC分类号： H01L21/76882 , H01L21/76843 , H01L21/76867 , H01L23/53233 , H01L2924/0002 , H01L2924/00
摘要： There is provided a fabrication method for interconnections, capable of embedding a Cu-alloy in recesses in an insulating film, and forming a barrier layer on an interface between the an insulating film and Cu-interconnections, without causing a rise in electric resistivity of the interconnections when fabricating semiconductor interconnections of the Cu-alloy embedded in the recesses provided in the insulating film on a semiconductor substrate. The fabrication method for the interconnections may comprise the steps of forming the respective recesses having a minimum width not more than 0.15 μm, and a ratio of a depth thereof to the minimum width (a depth/minimum width ratio) not less than 1, forming a Cu-alloy film containing Ti in a range of 0.5 to 3 at %, and N in a range of 0.4 to 2.0 at % over the respective recesses, and subsequently, annealing the Cu-alloy film to not lower than 200° C., and pressurizing the Cu-alloy film to not less than 50 MPa to thereby embed the Cu-alloy film into the respective recesses.
摘要翻译：提供了一种用于互连的制造方法，其能够将铜合金嵌入绝缘膜中的凹陷中，并且在绝缘膜和Cu互连之间的界面上形成阻挡层，而不会引起电阻率的上升当制造嵌入在设置在半导体衬底上的绝缘膜中的凹部中的Cu合金的半导体互连时，互连。互连的制造方法可以包括以下步骤：形成具有不大于0.15μm的最小宽度的相应凹槽，以及其深度与最小宽度（深度/最小宽度比）的比不小于1，形成在各凹部中含有0.5〜3原子％的Ti，N为0.4〜2.0原子％的Ti的Cu合金膜，然后将Cu合金膜退火至200℃以上。并将Cu合金膜加压至50MPa以上，从而将Cu合金膜嵌入各凹部。

10. 发明申请

US20110147753A1 DISPLAY DEVICE, COPPER ALLOY FILM FOR USE THEREIN, AND COPPER ALLOY SPUTTERING TARGET 审中-公开
标题翻译：显示器件，铜合金膜及铜合金溅射靶
公开(公告)号：US20110147753A1
公开(公告)日：2011-06-23
申请号：US13056444
申请日：2009-08-14
申请人： Takashi Onishi , Aya Miki , Hiroshi Goto , Masao Mizuno , Hirotaka Ito , Katsufumi Tomihisa
发明人： Takashi Onishi , Aya Miki , Hiroshi Goto , Masao Mizuno , Hirotaka Ito , Katsufumi Tomihisa
IPC分类号： H01L29/04 , B32B17/06
CPC分类号： H01L23/53233 , C22C9/00 , C22C9/01 , H01L27/124 , H01L2924/0002 , Y10T428/265 , H01L2924/00
摘要： Disclosed is a Cu alloy film for a display device that has high adhesion to a glass substrate while maintaining a low electric resistance characteristic of Cu-based materials. The Cu alloy film is wiring in direct contact with a glass substrate on a board and contains 0.1 to 10.0 atomic % in total of one or more elements selected from the group consisting of Ti, Al, and Mg. Also disclosed is a display device comprising a thin-film transistor that comprises the Cu alloy film. In a preferred embodiment of the display device, the thin-film transistor has a bottom gate-type structure, and a gate electrode and scanning lines in the thin-film transistor comprise the Cu alloy film and are in direct contact with the glass substrate.
摘要翻译：公开了一种用于显示装置的Cu合金膜，其在保持Cu基材料的低电阻特性的同时对玻璃基板具有高粘附性。 Cu合金膜是与板上的玻璃基板直接接触的布线，并且含有0.1〜10.0原子％的一种以上选自Ti，Al，Mg的元素。还公开了包括包含Cu合金膜的薄膜晶体管的显示装置。在显示装置的优选实施例中，薄膜晶体管具有底栅型结构，并且薄膜晶体管中的栅电极和扫描线包括Cu合金膜并与玻璃基板直接接触。

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