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1. 发明授权

US07919875B2 Semiconductor device with recess portion over pad electrode 有权
标题翻译：具有在焊盘电极上的凹陷部分的半导体器件
公开(公告)号：US07919875B2
公开(公告)日：2011-04-05
申请号：US11956160
申请日：2007-12-13
申请人： Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
发明人： Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/13 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L23/3114 , H01L24/11 , H01L24/12 , H01L2221/68327 , H01L2221/68372 , H01L2224/02313 , H01L2224/0401 , H01L2224/0558 , H01L2224/05644 , H01L2224/131 , H01L2224/13144 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00014 , H01L2224/13099
摘要： A manufacturing method of a semiconductor device formed in a chip size package is improved to enhance a yield and reliability. A window to expose first wirings is formed only in a region of a semiconductor substrate where the first wirings exist. As a result, area of the semiconductor substrate bonded to a supporting body through an insulation film and a resin is increased to prevent cracks in the supporting body and separation of the semiconductor substrate from the supporting body. A slit is formed along a dicing line after forming the window, the slit is covered with a protection film and then the semiconductor substrate is diced into individual semiconductor dice. Thus, separation on a cut surface or at an edge of the semiconductor dice, which otherwise would be caused by contact of the blade in the dicing can be prevented.
摘要翻译：改进了以芯片尺寸封装形成的半导体器件的制造方法，以提高产量和可靠性。仅在存在第一布线的半导体基板的区域中形成露出第一布线的窗口。结果，增加了通过绝缘膜和树脂粘合到支撑体的半导体衬底的面积，以防止支撑体中的裂纹和半导体衬底与支撑体的分离。在形成窗口之后沿着切割线形成狭缝，用保护膜覆盖狭缝，然后将半导体基板切割成单独的半导体管芯。因此，可以防止在切割时由刀片接触而导致的半导体管芯的切割面或边缘处的分离。

2. 发明授权

US07456083B2 Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US07456083B2
公开(公告)日：2008-11-25
申请号：US11069061
申请日：2005-03-02
申请人： Takashi Noma , Yoshinori Seki , Motoaki Wakui
发明人： Takashi Noma , Yoshinori Seki , Motoaki Wakui
IPC分类号： H01L21/301
CPC分类号： H01L21/78 , H01L21/561 , H01L23/3114 , H01L23/544 , H01L24/10 , H01L24/13 , H01L24/97 , H01L2223/54453 , H01L2223/5448 , H01L2224/05001 , H01L2224/05022 , H01L2224/051 , H01L2224/05548 , H01L2224/05624 , H01L2224/05644 , H01L2224/05655 , H01L2224/13 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00 , H01L2924/00014
摘要： The invention is directed to an improvement of cutting accuracy in a cutting process when a semiconductor device attached with a supporting member is manufactured. The invention provides a manufacturing method of a semiconductor device where a semiconductor wafer attached with a glass substrate is cut with moving a rotation blade along a dicing region and has following features. A pair of alignment marks is formed facing each other over the dicing region on the semiconductor wafer. Then, when the rotation blade is to be aligned on a center of the dicing region, that is, on a centerline thereof in the cutting process, positions of the alignment marks are detected by a recognition camera, the centerline is calculated based on the detection result, and the rotation blade is aligned on the centerline to perform cutting.
摘要翻译：本发明涉及当制造附着有支撑构件的半导体器件时，在切割过程中提高切割精度。本发明提供一种半导体器件的制造方法，其中通过沿着切割区域移动旋转刀片来切割附着有玻璃基板的半导体晶片，并且具有以下特征。在半导体晶片上的切割区域上形成一对对准标记。然后，当切割区域的中心，即在切割过程中的中心线处，旋转刀片对准时，通过识别照相机检测对准标记的位置，基于检测计算中心线结果，旋转叶片在中心线上对齐，以进行切割。

3. 发明申请

US20050208735A1 Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20050208735A1
公开(公告)日：2005-09-22
申请号：US11069061
申请日：2005-03-02
申请人： Takashi Noma , Yoshinori Seki , Motoaki Wakui
发明人： Takashi Noma , Yoshinori Seki , Motoaki Wakui
IPC分类号： H01L21/301 , G01R31/26 , H01L21/56 , H01L21/78 , H01L23/31 , H01L23/485 , H01L23/544
CPC分类号： H01L21/78 , H01L21/561 , H01L23/3114 , H01L23/544 , H01L24/10 , H01L24/13 , H01L24/97 , H01L2223/54453 , H01L2223/5448 , H01L2224/05001 , H01L2224/05022 , H01L2224/051 , H01L2224/05548 , H01L2224/05624 , H01L2224/05644 , H01L2224/05655 , H01L2224/13 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00 , H01L2924/00014
摘要： The invention is directed to an improvement of cutting accuracy in a cutting process when a semiconductor device attached with a supporting member is manufactured. The invention provides a manufacturing method of a semiconductor device where a semiconductor wafer attached with a glass substrate is cut with moving a rotation blade along a dicing region and has following features. A pair of alignment marks is formed facing each other over the dicing region on the semiconductor wafer. Then, when the rotation blade is to be aligned on a center of the dicing region, that is, on a centerline thereof in the cutting process, positions of the alignment marks are detected by a recognition camera, the centerline is calculated based on the detection result, and the rotation blade is aligned on the centerline to perform cutting.
摘要翻译：本发明涉及当制造附着有支撑构件的半导体器件时，在切割过程中提高切割精度。本发明提供一种半导体器件的制造方法，其中通过沿着切割区域移动旋转刀片来切割附着有玻璃基板的半导体晶片，并且具有以下特征。在半导体晶片上的切割区域上形成一对对准标记。然后，当在切割过程中旋转刀片对准切割区域的中心时，即在切割过程的中心线上，通过识别照相机检测对准标记的位置，基于检测计算中心线结果，旋转叶片在中心线上对齐，以进行切割。

4. 发明申请

US20080093708A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080093708A1
公开(公告)日：2008-04-24
申请号：US11956160
申请日：2007-12-13
申请人： Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
发明人： Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
IPC分类号： H01L23/48
CPC分类号： H01L24/13 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L23/3114 , H01L24/11 , H01L24/12 , H01L2221/68327 , H01L2221/68372 , H01L2224/02313 , H01L2224/0401 , H01L2224/0558 , H01L2224/05644 , H01L2224/131 , H01L2224/13144 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00014 , H01L2224/13099
摘要： A manufacturing method of a semiconductor device formed in a chip size package is improved to enhance a yield and reliability. A window to expose first wirings is formed only in a region of a semiconductor substrate where the first wirings exist. As a result, area of the semiconductor substrate bonded to a supporting body through an insulation film and a resin is increased to prevent cracks in the supporting body and separation of the semiconductor substrate from the supporting body. A slit is formed along a dicing line after forming the window, the slit is covered with a protection film and then the semiconductor substrate is diced into individual semiconductor dice. Thus, separation on a cut surface or at an edge of the semiconductor dice, which otherwise would be caused by contact of the blade in the dicing can be prevented.
摘要翻译：改进了以芯片尺寸封装形成的半导体器件的制造方法，以提高产量和可靠性。仅在存在第一布线的半导体基板的区域中形成露出第一布线的窗口。结果，增加了通过绝缘膜和树脂粘合到支撑体的半导体衬底的面积，以防止支撑体中的裂纹和半导体衬底与支撑体的分离。在形成窗口之后沿着切割线形成狭缝，用保护膜覆盖狭缝，然后将半导体基板切割成单独的半导体管芯。因此，可以防止在切割时由刀片接触而导致的半导体管芯的切割面或边缘处的分离。

5. 发明授权

US07312107B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US07312107B2
公开(公告)日：2007-12-25
申请号：US10910805
申请日：2004-08-04
申请人： Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
发明人： Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
IPC分类号： H01L21/44
CPC分类号： H01L24/13 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L23/3114 , H01L24/11 , H01L24/12 , H01L2221/68327 , H01L2221/68372 , H01L2224/02313 , H01L2224/0401 , H01L2224/0558 , H01L2224/05644 , H01L2224/131 , H01L2224/13144 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00014 , H01L2224/13099
摘要： A manufacturing method of a semiconductor device formed in a chip size package is improved to enhance a yield and reliability. A window to expose first wirings is formed only in a region of a semiconductor substrate where the first wirings exist. As a result, area of the semiconductor substrate bonded to a supporting body through an insulation film and a resin is increased to prevent cracks in the supporting body and separation of the semiconductor substrate from the supporting body. A slit is formed along a dicing line after forming the window, the slit is covered with a protection film and then the semiconductor substrate is diced into individual semiconductor dice. Thus, separation on a cut surface or at an edge of the semiconductor dice, which otherwise would be caused by contact of the blade in the dicing can be prevented.
摘要翻译：改进了以芯片尺寸封装形成的半导体器件的制造方法，以提高产量和可靠性。仅在存在第一布线的半导体基板的区域中形成露出第一布线的窗口。结果，增加了通过绝缘膜和树脂粘合到支撑体的半导体衬底的面积，以防止支撑体中的裂纹和半导体衬底与支撑体的分离。在形成窗口之后沿着切割线形成狭缝，用保护膜覆盖狭缝，然后将半导体基板切割成单独的半导体管芯。因此，可以防止在切割时由刀片接触而导致的半导体管芯的切割面或边缘处的分离。

6. 发明申请

US20050048740A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050048740A1
公开(公告)日：2005-03-03
申请号：US10910805
申请日：2004-08-04
申请人： Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
发明人： Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
IPC分类号： H01L23/12 , H01L21/301 , H01L23/31 , H01L23/485
CPC分类号： H01L24/13 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L23/3114 , H01L24/11 , H01L24/12 , H01L2221/68327 , H01L2221/68372 , H01L2224/02313 , H01L2224/0401 , H01L2224/0558 , H01L2224/05644 , H01L2224/131 , H01L2224/13144 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00014 , H01L2224/13099
摘要： A manufacturing method of a semiconductor device formed in a chip size package is improved to enhance a yield and reliability. A window to expose first wirings is formed only in a region of a semiconductor substrate where the first wirings exist. As a result, area of the semiconductor substrate bonded to a supporting body through an insulation film and a resin is increased to prevent cracks in the supporting body and separation of the semiconductor substrate from the supporting body. A slit is formed along a dicing line after forming the window, the slit is covered with a protection film and then the semiconductor substrate is diced into individual semiconductor dice. Thus, separation on a cut surface or at an edge of the semiconductor dice, which otherwise would be caused by contact of the blade in the dicing can be prevented.
摘要翻译：改进了以芯片尺寸封装形成的半导体器件的制造方法，以提高产量和可靠性。仅在存在第一布线的半导体基板的区域中形成露出第一布线的窗口。结果，增加了通过绝缘膜和树脂粘合到支撑体的半导体衬底的面积，以防止支撑体中的裂纹和半导体衬底与支撑体的分离。在形成窗口之后沿着切割线形成狭缝，用保护膜覆盖狭缝，然后将半导体基板切割成单独的半导体管芯。因此，可以防止在切割时由刀片接触而导致的半导体管芯的切割面或边缘处的分离。

7. 发明申请

US20080258258A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20080258258A1
公开(公告)日：2008-10-23
申请号：US12103857
申请日：2008-04-16
申请人： Katsu HORIKOSHI , Hisayoshi Uchiyama , Takashi Noma , Yoshinori Seki , Hiroshi Yamada , Shinzo Ishibe , Hiroyuki Shinogi
发明人： Katsu HORIKOSHI , Hisayoshi Uchiyama , Takashi Noma , Yoshinori Seki , Hiroshi Yamada , Shinzo Ishibe , Hiroyuki Shinogi
IPC分类号： H01L29/92
CPC分类号： H01L23/642 , H01L23/3114 , H01L23/481 , H01L23/5223 , H01L24/11 , H01L24/12 , H01L24/25 , H01L24/29 , H01L24/32 , H01L27/14618 , H01L27/14683 , H01L2224/02313 , H01L2224/0401 , H01L2224/0558 , H01L2224/05644 , H01L2224/1132 , H01L2224/131 , H01L2224/18 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/09701 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3511 , H01L2924/3512 , H01L2224/13099 , H01L2924/00
摘要： The invention provides a semiconductor device which has a capacitor element therein to achieve size reduction of the device, the capacitor element having larger capacitance than conventional. A semiconductor integrated circuit and pad electrodes are formed on the front surface of a semiconductor substrate. A second insulation film is formed on the side and back surfaces of the semiconductor substrate, and a capacitor electrode is formed between the back surface of the semiconductor substrate and the second insulation film, contacting the back surface of the semiconductor substrate. The second insulation film is covered by wiring layers electrically connected to the pad electrodes, and the wiring layers and the capacitor electrode overlap with the second insulation film being interposed therebetween. Thus, the capacitor electrode, the second insulation film and the wiring layers form capacitors.
摘要翻译：本发明提供了一种半导体器件，其中具有电容器元件以实现器件的尺寸减小，电容器元件具有比常规更大的电容。半导体集成电路和焊盘电极形成在半导体衬底的前表面上。在半导体衬底的侧表面和后表面上形成第二绝缘膜，并且在半导体衬底的背面与第二绝缘膜之间形成电容电极，与半导体衬底的后表面接触。第二绝缘膜由与焊盘电极电连接的布线层覆盖，并且布线层和电容器电极与第二绝缘膜重叠。因此，电容器电极，第二绝缘膜和布线层形成电容器。

8. 发明授权

US07101735B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07101735B2
公开(公告)日：2006-09-05
申请号：US10696581
申请日：2003-10-30
申请人： Takashi Noma , Hiroyuki Shinogi , Akira Suzuki , Yoshinori Seki , Koichi Kuhara , Yukihiro Takao , Hiroshi Yamada
发明人： Takashi Noma , Hiroyuki Shinogi , Akira Suzuki , Yoshinori Seki , Koichi Kuhara , Yukihiro Takao , Hiroshi Yamada
IPC分类号： H01L21/44
CPC分类号： H01L21/6835 , H01L21/76898 , H01L23/3114 , H01L23/3185 , H01L23/481 , H01L24/10 , H01L2221/6834 , H01L2221/68377 , H01L2224/05001 , H01L2224/05008 , H01L2224/05548 , H01L2224/05569 , H01L2224/16 , H01L2924/01019 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/1305 , H01L2924/00 , H01L2224/05644 , H01L2924/00014 , H01L2224/05655 , H01L2224/05124 , H01L2224/05147
摘要： A first glass substrate is bonded through a resin to a top surface of a semiconductor wafer on which a first wiring is formed. A second glass substrate is bonded to a back surface of the semiconductor wafer through a resin. A V-shaped groove is formed by notching from a surface of the second glass substrate through a part of the first glass substrate. A second wiring connected with the first wiring and extending to the surface of the second glass substrate is formed. A protection film composed of an organic resin and a photoresist layer to provide the protection film with an opening are formed on the second wiring by spray coating. A conductive terminal is formed by screen printing using the protection film as a solder mask. A cushioning material may be formed on the second glass substrate by spray coating.
摘要翻译：将第一玻璃基板通过树脂粘合到其上形成有第一布线的半导体晶片的顶表面。通过树脂将第二玻璃基板结合到半导体晶片的背面。通过第一玻璃基板的一部分从第二玻璃基板的表面开槽而形成V形槽。形成与第一布线连接并延伸到第二玻璃基板的表面的第二布线。通过喷涂在第二布线上形成由有机树脂和光致抗蚀剂层组成的保护膜以提供具有开口的保护膜。通过使用保护膜作为焊接掩模的丝网印刷形成导电端子。可以通过喷涂在第二玻璃基板上形成缓冲材料。

9. 发明申请

US20100044821A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100044821A1
公开(公告)日：2010-02-25
申请号：US12538304
申请日：2009-08-10
申请人： Takashi Noma , Yoshimasa Amatatsu , Yoshinori Seki , Hiroyuki Shinogi
发明人： Takashi Noma , Yoshimasa Amatatsu , Yoshinori Seki , Hiroyuki Shinogi
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L31/02162 , H01L27/14621 , H01L27/14645
摘要： This invention offers a semiconductor device to measure a luminance for the visible wavelength range of light components and its manufacturing method which reduce its manufacturing cost. A first light-receiving element and a second light-receiving element are formed in a semiconductor substrate. Then, there is formed an arithmetic circuit that calculates a difference between a value of an electric current corresponding to an amount of light detected by the first light-receiving element (that is, a value of an electric current representing a relative sensitivity against the light) and a value of an electric current corresponding to an amount of light detected by the second light-receiving element (that is, a value of an electric current representing a relative sensitivity against the light). Next, a first green pass filter permeable only to light in a green wavelength range and an infrared wavelength range is formed to cover the first light-receiving element, while a second green pass filter similar to the first green filter is formed to cover the second light-receiving element. In addition, a red pass filter permeable only to light in a red wavelength range and the infrared wavelength range is formed to cover the second light-receiving element.
摘要翻译：本发明提供一种用于测量光分量的可见光波长范围的亮度的半导体器件及其制造方法，其制造成本降低。第一光接收元件和第二光接收元件形成在半导体衬底中。然后，形成运算电路，其计算与由第一受光元件检测出的光量相对应的电流值（即，表示相对于光的相对灵敏度的电流值））和与由第二受光元件检测到的光量相对应的电流值（即，相对于光的相对灵敏度的电流值）。接下来，形成可以仅透过绿色波长范围和红外线波长范围的光的第一绿色通过滤光片，以覆盖第一光接收元件，同时形成与第一绿色滤光片相似的第二绿色通过滤光片以覆盖第二光接收元件光接收元件。此外，形成仅透过红色波长范围的光和红外线波长范围的红色滤光片，以覆盖第二光接收元件。

10. 发明申请

US20070026639A1 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20070026639A1
公开(公告)日：2007-02-01
申请号：US11488890
申请日：2006-07-19
申请人： Takashi Noma , Hiroyuki Shinogi , Akira Suzuki , Yoshinori Seki , Koichi Kuhara , Yukihiro Takao , Hiroshi Yamada
发明人： Takashi Noma , Hiroyuki Shinogi , Akira Suzuki , Yoshinori Seki , Koichi Kuhara , Yukihiro Takao , Hiroshi Yamada
IPC分类号： H01L21/44
CPC分类号： H01L21/6835 , H01L21/76898 , H01L23/3114 , H01L23/3185 , H01L23/481 , H01L24/10 , H01L2221/6834 , H01L2221/68377 , H01L2224/05001 , H01L2224/05008 , H01L2224/05548 , H01L2224/05569 , H01L2224/16 , H01L2924/01019 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/1305 , H01L2924/00 , H01L2224/05644 , H01L2924/00014 , H01L2224/05655 , H01L2224/05124 , H01L2224/05147
摘要： A glass substrate is bonded through a resin to the top surface of a semiconductor wafer on which a first wiring is formed. A V-shaped groove is formed by notching from the back surface of the wafer. A second wiring connected with the first wiring and extending over the back surface of the wafer is formed. A protection film composed of an organic resin or a photoresist layer to provide protection with an opening is formed on the second wiring by spray coating. A conductive terminal is formed by screen printing using the protection film as a solder mask. A cushioning material may be formed on the back surface of the wafer by spray coating.
摘要翻译：玻璃基板通过树脂粘合到其上形成有第一布线的半导体晶片的顶表面。通过从晶片的背面开槽而形成V形槽。形成与第一布线连接并在晶片的背面延伸的第二布线。通过喷涂在第二布线上形成由有机树脂或光致抗蚀剂层组成的保护膜以提供开口的保护。通过使用保护膜作为焊接掩模的丝网印刷形成导电端子。可以通过喷涂在晶片的背面上形成缓冲材料。

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