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1. 发明申请

US20060145158A1 Poly-crystalline silicon thin film transistor 审中-公开
标题翻译：多晶硅薄膜晶体管
公开(公告)号：US20060145158A1
公开(公告)日：2006-07-06
申请号：US11322235
申请日：2006-01-03
申请人： Takashi Noguchi , Huaxiang Yin , Ji-sim Jung , Wenxu Xianyu , Jang-yeon Kwon , Yong-han Roh , Suk-won Jeong , Seong-hoon Jeong
发明人： Takashi Noguchi , Huaxiang Yin , Ji-sim Jung , Wenxu Xianyu , Jang-yeon Kwon , Yong-han Roh , Suk-won Jeong , Seong-hoon Jeong
IPC分类号： H01L29/76
CPC分类号： H01L29/66757 , H01L29/4908
摘要： Provided is a silicon thin film transistor (TFT) including: a substrate; a silicon channel layer formed on the substrate with a source and a drain on both sides thereof; a gate insulating layer formed on the silicon channel layer; and a gate formed on the gate insulating layer, wherein the gate insulating layer has a structure including an HfOx film. The TFT has a low leakage current.
摘要翻译：提供一种硅薄膜晶体管（TFT），包括：基板; 形成在所述基板上的硅沟道层，其两侧具有源极和漏极; 形成在硅沟道层上的栅极绝缘层; 以及形成在所述栅极绝缘层上的栅极，其中所述栅极绝缘层具有包括HfO x膜的结构。 TFT具有低漏电流。

2. 发明申请

US20060220034A1 Thin film transistor with capping layer and method of manufacturing the same 审中-公开
标题翻译：具有封盖层的薄膜晶体管及其制造方法
公开(公告)号：US20060220034A1
公开(公告)日：2006-10-05
申请号：US11369947
申请日：2006-03-08
申请人： Huaxiang Yin , Takashi Noguchi , Wenxu Xianyu , Do-young Kim , Ji-sim Jung , Jang-yeon Kwon
发明人： Huaxiang Yin , Takashi Noguchi , Wenxu Xianyu , Do-young Kim , Ji-sim Jung , Jang-yeon Kwon
IPC分类号： H01L33/00
CPC分类号： H01L29/66757 , H01L29/4908
摘要： A thin film transistor and a method of manufacturing the thin film transistor. The thin film transistor may include a substrate, a buffer layer, a polysilicon layer, a gate insulating layer and/or a gate electrode, and a capping layer. The buffer layer may be formed on the substrate. The polysilicon layer may be formed on the buffer layer, and may include a first doped region, a second doped region, and a channel region. The gate insulating layer and a gate electrode may be sequentially stacked on the channel region of the polysilicon layer. The capping layer may be stacked on the gate electrode.
摘要翻译：一种薄膜晶体管及其制造方法。薄膜晶体管可以包括衬底，缓冲层，多晶硅层，栅极绝缘层和/或栅电极以及覆盖层。缓冲层可以形成在衬底上。多晶硅层可以形成在缓冲层上，并且可以包括第一掺杂区域，第二掺杂区域和沟道区域。栅极绝缘层和栅电极可以顺序堆叠在多晶硅层的沟道区上。覆盖层可以堆叠在栅电极上。

3. 发明申请

US20060084204A1 Method of manufacturing a thin film transistor 有权
公开(公告)号：US20060084204A1
公开(公告)日：2006-04-20
申请号：US11199272
申请日：2005-08-09
申请人： Huaxiang Yin , Wenxu Xianyu , Takashi Noguchi , Hans Cho , Ji-sim Jung
发明人： Huaxiang Yin , Wenxu Xianyu , Takashi Noguchi , Hans Cho , Ji-sim Jung
IPC分类号： H01L21/84
CPC分类号： H01L21/02675 , H01L21/2026 , H01L21/84 , H01L27/1203 , H01L29/66795 , H01L29/785
摘要： A method of manufacturing a thin film transistor is provided. The method includes forming an amorphous silicon layer on a substrate, forming a source region, a drain region, and a region of a plurality of channels electrically interposed between the source region and the drain region by patterning the amorphous silicon layer, annealing a region of the channels, sequentially forming a gate oxide film and a gate electrode on a channel surface, and doping the source region and the drain region.

4. 发明申请

US20060068507A1 Methods of forming a material film, methods of forming a capacitor, and methods of forming a semiconductor memory device using the same 审中-公开
标题翻译：形成材料膜的方法，形成电容器的方法以及使用其形成半导体存储器件的方法
公开(公告)号：US20060068507A1
公开(公告)日：2006-03-30
申请号：US11233363
申请日：2005-09-23
申请人： Wenxu Xianyu , Takashi Noguchi , Hans Cho , Jang-Yeon Kwon , Huaxiang Yin
发明人： Wenxu Xianyu , Takashi Noguchi , Hans Cho , Jang-Yeon Kwon , Huaxiang Yin
IPC分类号： H01L21/00 , H01L21/8242
CPC分类号： H01L21/02356 , H01L21/02197 , H01L21/31691 , H01L21/84 , H01L27/11502 , H01L27/12
摘要： A method of forming a material (e.g., ferroelectric) film, a method of manufacturing a capacitor, and a method of forming a semiconductor memory device using the method of forming the (e.g., ferroelectric) film are provided. Pursuant to an example embodiment of the present invention, a method of forming a ferroelectric film includes preparing a substrate, depositing an amorphous ferroelectric film on the substrate, and crystallizing the amorphous ferroelectric film by irradiating it with a laser beam. According to still another example embodiment of the present invention, a method of forming a ferroelectric film may reduce the thermal damage to other elements because the ferroelectric film may be formed at a temperature lower than about 500° C. to about 550°C.
摘要翻译：提供了形成材料（例如铁电体）膜的方法，制造电容器的方法，以及使用形成（例如铁电体）膜的方法形成半导体存储器件的方法。根据本发明的示例性实施例，形成铁电体膜的方法包括制备基板，在基板上沉积非晶铁电体膜，并通过用激光束照射非晶强电介质膜使其结晶。根据本发明的另一示例性实施例，形成铁电体膜的方法可以减少对其它元件的热损伤，因为铁电体膜可以在低于约500℃至约550℃的温度下形成。

5. 发明申请

US20080261333A1 Methods of forming a material film, methods of forming a capacitor, and methods of forming a semiconductor memory device using the same 审中-公开
标题翻译：形成材料膜的方法，形成电容器的方法以及使用其形成半导体存储器件的方法
公开(公告)号：US20080261333A1
公开(公告)日：2008-10-23
申请号：US12213424
申请日：2008-06-19
申请人： Wenxu Xianyu , Takashi Noguchi , Hans S. Cho , Jang-Yeon Kwon , Huaxiang Yin
发明人： Wenxu Xianyu , Takashi Noguchi , Hans S. Cho , Jang-Yeon Kwon , Huaxiang Yin
IPC分类号： H01L21/28
CPC分类号： H01L21/02356 , H01L21/02197 , H01L21/31691 , H01L21/84 , H01L27/11502 , H01L27/12
摘要： A method of forming a material (e.g., ferroelectric) film, a method of manufacturing a capacitor, and a method of forming a semiconductor memory device using the method of forming the (e.g., ferroelectric) film are provided. Pursuant to an example embodiment of the present invention, a method of forming a ferroelectric film includes preparing a substrate, depositing an amorphous ferroelectric film on the substrate, and crystallizing the amorphous ferroelectric film by irradiating it with a laser beam. According to still another example embodiment of the present invention, a method of forming a ferroelectric film may reduce the thermal damage to other elements because the ferroelectric film may be formed at a temperature lower than about 500° C. to about 550° C.
摘要翻译：提供了形成材料（例如铁电体）膜的方法，制造电容器的方法，以及使用形成（例如铁电体）膜的方法形成半导体存储器件的方法。根据本发明的示例性实施例，形成铁电体膜的方法包括制备基板，在基板上沉积非晶铁电体膜，并通过用激光束照射非晶强电介质膜使其结晶。根据本发明的另一示例性实施例，形成铁电体膜的方法可以减少对其它元件的热损伤，因为铁电体膜可以形成在低于约500℃至约550℃的温度。

6. 发明授权

US07611932B2 Method of manufacturing a thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US07611932B2
公开(公告)日：2009-11-03
申请号：US11199272
申请日：2005-08-09
申请人： Huaxiang Yin , Wenxu Xianyu , Takashi Noguchi , Hans S. Cho , Ji-sim Jung
发明人： Huaxiang Yin , Wenxu Xianyu , Takashi Noguchi , Hans S. Cho , Ji-sim Jung
IPC分类号： H01L21/84
CPC分类号： H01L21/02675 , H01L21/2026 , H01L21/84 , H01L27/1203 , H01L29/66795 , H01L29/785
摘要： A method of manufacturing a thin film transistor is provided. The method includes forming an amorphous silicon layer on a substrate, forming a source region, a drain region, and a region of a plurality of channels electrically interposed between the source region and the drain region by patterning the amorphous silicon layer, annealing a region of the channels, sequentially forming a gate oxide film and a gate electrode on a channel surface, and doping the source region and the drain region.
摘要翻译：提供一种制造薄膜晶体管的方法。该方法包括：在衬底上形成非晶硅层，通过图案化非晶硅层，形成源极区，漏极区和电介入源区和漏区之间的多个通道的区域，退火区域通道，在通道表面上依次形成栅极氧化膜和栅电极，并掺杂源极区和漏极区。

7. 发明授权

US07859054B2 Poly-Si thin film transistor and organic light-emitting display having the same 有权
标题翻译：聚硅薄膜晶体管和有机发光显示器
公开(公告)号：US07859054B2
公开(公告)日：2010-12-28
申请号：US11561572
申请日：2006-11-20
申请人： Huaxiang Yin , Takashi Noguchi , Hyuk Lim , Wenxu Xianyu , Hans S. Cho
发明人： Huaxiang Yin , Takashi Noguchi , Hyuk Lim , Wenxu Xianyu , Hans S. Cho
IPC分类号： H01L21/84 , H01L27/12
CPC分类号： H01L27/12 , H01L29/78609 , H01L29/78696
摘要： A thin film transistor comprises an Si-based channel having a nonlinear electron-moving path, a source and a drain disposed at both sides of the channel, a gate disposed above the channel, an insulator interposed between the channel and the gate, and a substrate supporting the channel and the source and the drain disposed at either side of the channel respectively.
摘要翻译：薄膜晶体管包括具有非线性电子移动路径的Si基通道，设置在沟道两侧的源极和漏极，设置在沟道上方的栅极，介于通道和栅极之间的绝缘体，以及支撑通道的基板，分别设置在通道的两侧的源极和漏极。

8. 发明申请

US20100200834A1 Crystalline nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the same 有权
标题翻译：结晶纳米线基板及其制造方法以及使用其制造薄膜晶体管的方法
公开(公告)号：US20100200834A1
公开(公告)日：2010-08-12
申请号：US12659776
申请日：2010-03-22
申请人： Hans S. Cho , Takashi Noguchi , Wenxu Xianyu , Do-Young Kim , Huaxiang Yin , Xiaoxin Zhang
发明人： Hans S. Cho , Takashi Noguchi , Wenxu Xianyu , Do-Young Kim , Huaxiang Yin , Xiaoxin Zhang
IPC分类号： H01L29/775 , H01L29/04 , H01L29/02 , H01L27/12
CPC分类号： H01L29/0673 , B82Y10/00 , H01L29/0665 , H01L29/66772 , H01L29/78654 , H01L29/78684 , H01L29/78696 , Y10S977/762 , Y10S977/814 , Y10S977/90 , Y10S977/932 , Y10S977/943
摘要： Example embodiments relate to a crystalline nanowire substrate having a structure in which a crystalline nanowire film having a relatively fine line-width may be formed on a substrate, a method of manufacturing the same, and a method of manufacturing a thin film transistor using the same. The method of manufacturing the crystalline nanowire substrate may include preparing a substrate, forming an insulating film on the substrate, forming a silicon film on the insulating film, patterning the insulating film and the silicon film into a strip shape, reducing the line-width of the insulating film by undercut etching at least one lateral side of the insulating film, and forming a self-aligned silicon nanowire film on an upper surface of the insulating film by melting and crystallizing the silicon film.
摘要翻译：示例性实施例涉及具有其中可以在基板上形成具有相对较细的线宽的结晶纳米线膜的结构的晶体纳米线基板及其制造方法，以及使用其制造薄膜晶体管的方法。制造结晶纳米线基板的方法可以包括制备基板，在基板上形成绝缘膜，在绝缘膜上形成硅膜，将绝缘膜和硅膜图案化成带状，减小线宽绝缘膜通过底切蚀刻绝缘膜的至少一个侧面，并且通过使硅膜熔化和结晶而在绝缘膜的上表面上形成自对准硅纳米线膜。

9. 发明授权

US07511381B2 Thin film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07511381B2
公开(公告)日：2009-03-31
申请号：US11248620
申请日：2005-10-13
申请人： Takashi Noguchi , Wenxu Xianyu , Hans S. Cho , Huaxiang Yin
发明人： Takashi Noguchi , Wenxu Xianyu , Hans S. Cho , Huaxiang Yin
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/02598 , H01L21/02532 , H01L21/02667 , H01L21/2026 , H01L27/1281 , H01L29/66772
摘要： A thin film transistor (TFT) and a method of manufacturing the same are provided. The TFT includes a transparent substrate, an insulating layer on a region of the transparent substrate, a monocrystalline silicon layer, which includes source, drain, and channel regions, on the insulating layer and a gate insulating film and a gate electrode on the channel region of the monocrystalline silicon layer.
摘要翻译：提供薄膜晶体管（TFT）及其制造方法。 TFT包括透明基板，在透明基板的区域上的绝缘层，在绝缘层上包括源极，漏极和沟道区的单晶硅层，以及沟道区上的栅极绝缘膜和栅极电极的单晶硅层。

10. 发明授权

US07479442B2 Method of manufacturing single crystal Si film 有权
标题翻译：制造单晶Si膜的方法
公开(公告)号：US07479442B2
公开(公告)日：2009-01-20
申请号：US11071175
申请日：2005-03-04
申请人： Takashi Noguchi , Wenxu Xianyu , Huaxiang Yin
发明人： Takashi Noguchi , Wenxu Xianyu , Huaxiang Yin
IPC分类号： H01L21/461
CPC分类号： H01L21/76254
摘要： Provided is a method of manufacturing a single crystal Si film. The method includes: preparing a Si substrate on which a first oxide layer is formed and an insulating substrate on which a second oxide layer is formed; forming a dividing layer at a predetermined depth from a surface of the Si substrate by implanting hydrogen ions from above the first oxide layer; bonding the insulating substrate to the Si substrate so that the first oxide layer contacts the second oxide layer; and forming a single crystal Si film having a predetermined thickness on the insulating substrate by cutting the dividing layer by irradiating a laser beam from above the insulating substrate. Therefore, a single crystal Si film having a predetermined thickness can be formed on an insulating substrate.
摘要翻译：提供制造单晶Si膜的方法。该方法包括：制备其上形成有第一氧化物层的Si衬底和形成有第二氧化物层的绝缘衬底; 通过从所述第一氧化物层上方注入氢离子，从所述Si衬底的表面形成预定深度的分隔层; 将绝缘基板接合到Si衬底，使得第一氧化物层接触第二氧化物层; 以及通过从绝缘基板上方照射激光束切割分隔层，在绝缘基板上形成具有预定厚度的单晶硅膜。因此，可以在绝缘基板上形成具有预定厚度的单晶Si膜。

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