专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5289171A Color display apparatus 失效
标题翻译：彩色显示装置
公开(公告)号：US5289171A
公开(公告)日：1994-02-22
申请号：US825759
申请日：1992-01-21
申请人： Takashi Nire , Takehito Watanabe , Satoshi Tanda
发明人： Takashi Nire , Takehito Watanabe , Satoshi Tanda
IPC分类号： G09F9/33 , H05B33/10 , H05B33/12 , H05B33/14 , H05B33/22 , G09G3/30
CPC分类号： G09F9/33
摘要： In the present invention, an EL element section (1) includes a plurality of arranged cells, each including a thin film EL element formed so as to emit white light, and a like number of predetermined-color filters (2) formed on the surface of the EL element section and corresponding to the cells such that each cell is caused to emit light in accordance with image information and the emitted light is output through the corresponding color filter to color display purposes. Thus, a very thin color display apparatus is provided in which contrast is good and the dependency of the luminance on the visual sensation is also good. The thin film EL element according to the present invention uses a luminous layer of zinc sulphide containing nitrogen, so that transitional luminescence occurs among a plurality of levels, and hence rays of light having various wavelengths are emitted to thereby provide white light containing three primary colors.
摘要翻译： PCT No.PCT / JP87 / 00469 Sec。 371日期：1988年12月29日第 102（e）日期1988年12月29日PCT提交1987年7月3日PCT公布。公开号WO88 / 00382 在本发明中，EL元件部分（1）包括多个布置的单元，每个单元包括形成为发出白光的薄膜EL元件和类似数量的预定滤色器（2）形成在EL元件部分的表面上并对应于单元，使得根据图像信息使每个单元发光，并且通过相应的滤色器输出发射的光以进行彩色显示。因此，提供了一种非常薄的彩色显示装置，其中对比度良好，并且亮度对视觉的依赖性也良好。根据本发明的薄膜EL元件使用含氮的硫化锌发光层，从而在多个层次之间发生过渡发光，因此发射具有各种波长的光线，从而提供含有三原色的白光。

2. 发明授权

US5072263A Thin film EL device with protective film 失效
标题翻译：具有保护膜的薄膜EL器件
公开(公告)号：US5072263A
公开(公告)日：1991-12-10
申请号：US700947
申请日：1991-05-14
申请人： Takehito Watanabe , Satoshi Tanda , Takashi Nire
发明人： Takehito Watanabe , Satoshi Tanda , Takashi Nire
IPC分类号： H05B33/04 , H05B33/22
CPC分类号： H05B33/22 , H05B33/04
摘要： A thin-film EL device of which the surface is coated with a protective film of a two-layer structure consisting of an insulating film (10) and a metallic film (20) in order to obtain good air-tightness and high reliability. The insulating film (10) consists of any one of a silicon oxide film, a silicon nitride film, an aluminum oxide film or a tantalum oxide film, and the metallic film consists of a thin film of either aluminum or tantalum.

3. 发明授权

US5164225A Method of fabricating thin-film EL device 失效
标题翻译：制造薄膜EL器件的方法
公开(公告)号：US5164225A
公开(公告)日：1992-11-17
申请号：US675054
申请日：1991-03-25
申请人： Takashi Nire , Satoshi Tanda
发明人： Takashi Nire , Satoshi Tanda
IPC分类号： H05B33/06 , H05B33/10 , H05B33/12 , H05B33/26
CPC分类号： H05B33/26 , H05B33/06 , H05B33/10
摘要： A method of fabricating a thin-film EL device comprising the steps of sequentially forming and stacking a first electrically conductive layer of first electrodes, a first insulating layer, a luminous layer, a second insulating layer and a second electrically conductive layer of second electrodes; previously forming a pattern of the first conductive layer all over a zone for formation of the first electrodes and a zone for formation of electrode terminals; and immersing it into a plating solution to selectively form a terminal pattern only on the first conductive layer, whereby the need for pattern aligning operation can be eliminated, only immersion of it into the plating solution enables easy formation of the precise terminal pattern without providing any damage to the elements of the EL device, and the obtained device can maintain its stable characteristics for a long period of time.

4. 发明授权

US07553335B2 Scanning probe microscope probe and manufacturing method therefor, scanning probe microscope and using method therefor, needle-like body and manufacturing method therefor, electronic device and manufacturing method therefor, charge density wave quantum phase microscope, and charge density wave quantum interferometer 失效
标题翻译：扫描探针显微镜探针及其制造方法，扫描探针显微镜及其使用方法，针状体及其制造方法，电子装置及其制造方法，电荷密度波量子相显微镜，电荷密度波量子干涉仪
公开(公告)号：US07553335B2
公开(公告)日：2009-06-30
申请号：US11568223
申请日：2005-04-22
申请人： Satoshi Tanda , Migaku Oda , Katsuhiko Inagaki , Hiroyuki Ohkawa , Takeshi Toshima , Naoki Momono , Munehiro Nishida , Masayuki Ido
发明人： Satoshi Tanda , Migaku Oda , Katsuhiko Inagaki , Hiroyuki Ohkawa , Takeshi Toshima , Naoki Momono , Munehiro Nishida , Masayuki Ido
IPC分类号： G01N13/10
CPC分类号： G01Q70/06 , G01Q70/12
摘要： A scanning probe microscope probe is produced by depositing a raw-material film on the surface of a cone made of Si, etc. and growing a needle-like crystal by using the raw-material film by irradiating an energy beam to a point on the cone at a predetermined distance along the side surface from the cone tip under such conditions as not to melt the cone. Also, a charge density wave quantum phase microscope is provided which uses a probe made of a charge density wave crystal. Also, a charge density wave quantum interferometer is provided which uses the needle-like crystal formed from the charge density wave crystal. Also, the scanning probe microscope probe is formed from a pressure-induced superconducting substance.
摘要翻译：通过在由Si等制成的锥体的表面上沉积原料膜来制造扫描探针显微镜探针，并且通过使用原料膜通过照射能量束来生长针状晶体在不使锥体熔化的条件下，沿着来自锥尖的侧表面以预定距离锥形。此外，提供了使用由电荷密度波晶体制成的探针的电荷密度波量子相位显微镜。此外，提供了使用由电荷密度波晶形成的针状晶体的电荷密度波量子干涉仪。此外，扫描探针显微镜探针由压力诱导的超导物质形成。

5. 发明申请

US20070272855A1 SCANNING PROBE MICROSCOPE PROBE AND MANUFACTURING METHOD THEREFOR, SCANNING PROBE MICROSCOPE AND USING METHOD THEREFOR, NEEDLE-LIKE BODY AND MANUFACTURING METHOD THEREFOR, ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREFOR, CHARGE DENSITY WAVE QUANTUM PHASE MICROSCOPE, AND CHARGE DENSITY WAVE QUANTUM INTERFEROMETER 失效
标题翻译：扫描探针显微镜探针及其制造方法，扫描探针显微镜及其使用方法及其制造方法及其制造方法，电子设备及其制造方法，电荷密度波量子相位微观和电荷密度波量子干涉仪
公开(公告)号：US20070272855A1
公开(公告)日：2007-11-29
申请号：US11568223
申请日：2005-04-22
申请人： Satoshi Tanda , Migaku Oda , Katsuhiko Inagaki , Hiroyuki Ohkawa , Takeshi Toshima , Naoki Momono , Munehiro Nishida , Masayuki Ido
发明人： Satoshi Tanda , Migaku Oda , Katsuhiko Inagaki , Hiroyuki Ohkawa , Takeshi Toshima , Naoki Momono , Munehiro Nishida , Masayuki Ido
IPC分类号： G01N23/00 , C03B25/08
CPC分类号： G01Q70/06 , G01Q70/12
摘要： A scanning probe microscope probe is produced by depositing a raw-material film on the surface of a cone made of Si, etc. and growing a needle-like crystal by using the raw-material film by irradiating an energy beam to a point on the cone at a predetermined distance along the side surface from the cone tip under such conditions as not to melt the cone. Also, a charge density wave quantum phase microscope is provided which uses a probe made of a charge density wave crystal. Also, a charge density wave quantum interferometer is provided which uses the needle-like crystal formed from the charge density wave crystal. Also, the scanning probe microscope probe is formed from a pressure-induced superconducting substance.
摘要翻译：通过在由Si等制成的锥体的表面上沉积原料膜来制造扫描探针显微镜探针，并且通过使用原料膜通过照射能量束来生长针状晶体在不使锥体熔化的条件下，沿着来自锥尖的侧表面以预定距离锥形。此外，提供了使用由电荷密度波晶体制成的探针的电荷密度波量子相位显微镜。此外，提供了使用由电荷密度波晶形成的针状晶体的电荷密度波量子干涉仪。此外，扫描探针显微镜探针由压力诱导的超导物质形成。

6. 发明申请

US20070183964A1 Nano-fiber or nano-tube comprising v group transition metal dichalcogenide crystals, and method for preparation thereof 审中-公开
标题翻译：包含v族过渡金属二硫属元素晶体的纳米纤维或纳米管及其制备方法
公开(公告)号：US20070183964A1
公开(公告)日：2007-08-09
申请号：US10558682
申请日：2004-03-30
申请人： Satoshi Tanda , Katsuhiko Inagaki , Taku Tsuneta , Takeshi Toshima
发明人： Satoshi Tanda , Katsuhiko Inagaki , Taku Tsuneta , Takeshi Toshima
IPC分类号： C01B19/04
CPC分类号： B82Y30/00 , C01B19/007 , C01P2004/16 , C01P2006/40 , C30B25/005 , C30B29/46
摘要： The present invention provides a nanostructure made of V group transition metal dichalcogenide such as NbSe2 and a method for preparing such a nanostructure. A nanofiber and nanotube comprising crystals of V group transition metal dichalcogenide such as NbSe2 or TaS2 have electric properties identical to those of a bulk single crystal. The preparation method is as follows: high-purity Nb and Se which are starting materials and which are mixed in a stoichiometric ratio are allowed to react with each other at 800° C. or less in a vacuum with a temperature gradient of 1 k/cm. In a method for preparing nanofibers or nanotubes from NbSe2 that is a starting material by a chemical transport process using a iodine acting as a medium, if C60 acting as a promoter is used, nuclei for forming the nanofibers or the nanotubes can be efficiently produced. Initial nanoparticles surrounding a C60 molecule form nanorings, which grow into the nanotubes. Other nanoparticles surrounding no C60 molecule grow into the nanofibers. The nanofibers prepared as described above have a diameter of 150 nm and a length of 10 μm.
摘要翻译：本发明提供由V族过渡金属二硫属元素如NbSe 2 N制成的纳米结构体及其制备方法。包含V族过渡金属二硫属元素的晶体的纳米纤维和纳米管如NbSe 2或TaS 2 2具有与本体单晶相同的电性能。制备方法如下：作为起始原料并以化学计量比混合的高纯度Nb和Se在真空中在800℃或更低的温度下彼此反应，温度梯度为1k / 厘米。在通过使用作为介质的碘的化学传输方法从作为原料的NbSe 2 N制备纳米纤维或纳米管的方法中，如果C 60作为助催化剂，可以有效地制造用于形成纳米纤维或纳米管的核。围绕C 60分子的初始纳米颗粒形成纳米管，其生长成纳米管。不含C 60分子的其他纳米颗粒生长到纳米纤维中。如上所述制备的纳米纤维的直径为150nm，长度为10μm。

7. 发明申请

US20060124048A1 Topological crystal of transition metal chalcogenide and method of forming the same 失效
标题翻译：过渡金属硫族化物的拓扑结晶及其形成方法
公开(公告)号：US20060124048A1
公开(公告)日：2006-06-15
申请号：US10535450
申请日：2003-05-20
申请人： Satoshi Tanda , Taku Tsuneta , Yoshitoshi Okajima , Katsuhiko Inagaki , Kazuhiko Yamaya , Noriyuki Hatakenaka
发明人： Satoshi Tanda , Taku Tsuneta , Yoshitoshi Okajima , Katsuhiko Inagaki , Kazuhiko Yamaya , Noriyuki Hatakenaka
IPC分类号： H01L21/322 , C30B15/14
CPC分类号： C30B11/12 , C30B23/007 , C30B29/46
摘要： Disclosed is a transition-metal chalcogenide crystal having a topological configuration/structure. A micro-droplet of a chalcogen element, such as S, Se or Te, is condensed and circulated in suspended form in an atmosphere containing a Group IVb, Vb or VI transition metal element, such as Nb, Ta, Zr, Ti, Hf or W, together with the chalcogen element. Then, micro-whiskers of a transition metal chalcogenide formed in the atmosphere are attached onto a surface of the chalcogen-element micro-droplet by the action of a surface tension of the micro-droplet, and grown as a loop-shaped crystal wound around the surface of the micro-droplet to obtain a loop-shaped crystal having a twist of 0, π or 2 π. The crystal has a ribbon-like open or closed loop configuration. The transition-metal chalcogenide crystal with the topological loop-shaped microstructure can exhibit original properties peculiar to each transition-metal chalcogenide, and has applicability, for example, to a quantum device, such as SQUID.
摘要翻译：公开了具有拓扑结构/结构的过渡金属硫族化物晶体。硫族元素如S，Se或Te的微滴在悬浮状态下冷凝并循环在含有IVb，Vb或VI族过渡金属元素如Nb，Ta，Zr，Ti，Hf的气氛中或W，与硫属元素一起。然后，通过微滴的表面张力的作用将在大气中形成的过渡金属硫属元素化物的微晶须附着在硫族元素微滴的表面上，并以缠绕在周围的环形晶体生长微滴的表面以获得具有0，pi或2π的扭曲的环形晶体。该晶体具有带状的开环或闭环配置。具有拓扑环状微结构的过渡金属硫族化物晶体可以显示出每种过渡金属硫族化物特有的原始特性，并且具有例如量子器件（例如SQUID）的适用性。

8. 发明申请

US20090177098A1 Examination System and Examination Method 审中-公开
标题翻译：考试制度和考试方法
公开(公告)号：US20090177098A1
公开(公告)日：2009-07-09
申请号：US12087930
申请日：2006-12-08
申请人： Kousuke Yakubo , Kazuhiko Yoshida , Hitoshi Fujii , Kazuhiko Oka , Satoshi Tanda , Ryuuji Morita
发明人： Kousuke Yakubo , Kazuhiko Yoshida , Hitoshi Fujii , Kazuhiko Oka , Satoshi Tanda , Ryuuji Morita
IPC分类号： A61B5/02
CPC分类号： A61B5/0261 , A61B3/12 , A61B5/416 , G06T7/0012 , G06T2207/30104
摘要： The blood flow is examined by making multifractal analysis of a blood flow velocity distribution in a vascular network and detecting a deviation of the blood flow velocity distribution from the multifractal distribution. The blood flow velocity distribution is provided as an image by irradiating laser light to the vascular network, converging, by an imaging lens, scattered laser light rays by blood cells in the blood flowing through blood vessels, detecting, by a photodetector, a speckle pattern produced owing to random interference between the scattered laser light rays and calculating the rate of change with time lapse of each speckle in the speckle pattern.
摘要翻译：通过对血管网络中的血流速度分布进行多重分形分析并检测血流速度分布与多重分形分布的偏差来检查血流量。血液流速分布通过向血管网照射激光，通过成像镜片会聚在血管内的血液中的血细胞分散的激光，由光电检测器检测出斑点图案由于散射激光之间的随机干涉而产生，并且计算散斑图案中每个斑点随时间变化的变化率。

9. 发明授权

US07374817B2 Topological crystal of transition metal chalcogenide and method of forming the same 失效
标题翻译：过渡金属硫族化物的拓扑结晶及其形成方法
公开(公告)号：US07374817B2
公开(公告)日：2008-05-20
申请号：US10535450
申请日：2003-05-20
申请人： Satoshi Tanda , Taku Tsuneta , Yoshitoshi Okajima , Katsuhiko Inagaki , Kazuhiko Yamaya , Noriyuki Hatakenaka
发明人： Satoshi Tanda , Taku Tsuneta , Yoshitoshi Okajima , Katsuhiko Inagaki , Kazuhiko Yamaya , Noriyuki Hatakenaka
IPC分类号： B32B15/01
CPC分类号： C30B11/12 , C30B23/007 , C30B29/46
摘要： Disclosed is a transition-metal chalcogenide crystal having a topological configuration/structure. A micro-droplet of a chalcogen element, such as S, Se or Te, is condensed and circulated in suspended form in an atmosphere containing a Group IVb, Vb or VI transition metal element, such as Nb, Ta, Zr, Ti, Hf or W, together with the chalcogen element. Then, micro-whiskers of a transition metal chalcogenide formed in the atmosphere are attached onto a surface of the chalcogen-element micro-droplet by the action of a surface tension of the micro-droplet, and grown as a loop-shaped crystal wound around the surface of the micro-droplet to obtain a loop-shaped crystal having a twist of 0, π or 2π. The crystal has a ribbon-like open or closed loop configuration. The transition-metal chalcogenide crystal with the topological loop-shaped microstructure can exhibit original properties peculiar to each transition-metal chalcogenide, and has applicability, for example, to a quantum device, such as SQUID.
摘要翻译：公开了具有拓扑结构/结构的过渡金属硫族化物晶体。硫族元素如S，Se或Te的微滴在悬浮状态下冷凝并循环在含有IVb，Vb或VI族过渡金属元素如Nb，Ta，Zr，Ti，Hf的气氛中或W，与硫属元素一起。然后，通过微滴的表面张力的作用将在大气中形成的过渡金属硫属元素化物的微晶须附着在硫族元素微滴的表面上，并以缠绕在周围的环形晶体生长微滴的表面，以获得扭曲为0，pi或2pi的环形晶体。该晶体具有带状的开环或闭环配置。具有拓扑环状微结构的过渡金属硫族化物晶体可以显示出每种过渡金属硫族化物特有的原始特性，并且具有例如量子器件（例如SQUID）的适用性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式