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1. 发明申请

US20120043617A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120043617A1
公开(公告)日：2012-02-23
申请号：US13264955
申请日：2010-04-28
申请人： Takashi Nakagawa , Naomu Kitano , Kazuaki Matsuo , Motomu Kosuda , Toru Tatsumi
发明人： Takashi Nakagawa , Naomu Kitano , Kazuaki Matsuo , Motomu Kosuda , Toru Tatsumi
IPC分类号： H01L27/092 , H01L21/336
CPC分类号： H01L29/517 , H01L21/28088 , H01L21/823842 , H01L21/823857 , H01L29/4966 , H01L29/6659 , H01L29/7833
摘要： This invention provides a semiconductor device having a field effect transistor comprising agate electrode comprising a metal nitride layer and a polycrystalline silicon layer, and the gate electrode is excellent in thermal stability and realizes a desired work function.In the semiconductor device, a gate insulating film 6 on a silicon substrate 5 has a high-permittivity insulating film formed of a metal oxide, a metal silicate, a metal oxide introduced with nitrogen, or a metal silicate introduced with nitrogen, the gate electrode has a first metal nitride layer 7 provided on the gate insulating film 6 and containing Ti and N, a second metal nitride layer 8 containing Ti and N, and a polycrystalline silicon layer 9, in the first metal nitride layer 7, a molar ratio between Ti and N (N/Ti) is not less than 1.1, and a crystalline orientation X1 is 1.1
摘要翻译：本发明提供一种具有场效应晶体管的半导体器件，该场效应晶体管包括包含金属氮化物层和多晶硅层的玛瑙电极，并且该栅电极具有优异的热稳定性并实现所需的功函数。在半导体装置中，硅基板5上的栅极绝缘膜6具有由金属氧化物，金属硅酸盐，被引入氮的金属氧化物或导入氮的金属硅酸盐形成的高电容率绝缘膜，栅电极具有设置在栅极绝缘膜6上并且含有Ti和N的第一金属氮化物层7，含有Ti和N的第二金属氮化物层8和多晶硅层9在第一金属氮化物层7中的摩尔比 Ti和N（N / Ti）不小于1.1，结晶取向X1为1.1

2. 发明授权

US08415753B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08415753B2
公开(公告)日：2013-04-09
申请号：US13264955
申请日：2010-04-28
申请人： Takashi Nakagawa , Naomu Kitano , Kazuaki Matsuo , Motomu Kosuda , Toru Tatsumi
发明人： Takashi Nakagawa , Naomu Kitano , Kazuaki Matsuo , Motomu Kosuda , Toru Tatsumi
IPC分类号： H01L27/092 , H01L21/336
CPC分类号： H01L29/517 , H01L21/28088 , H01L21/823842 , H01L21/823857 , H01L29/4966 , H01L29/6659 , H01L29/7833
摘要： This invention provides a semiconductor device having a field effect transistor comprising a gate electrode comprising a metal nitride layer and a polycrystalline silicon layer, and the gate electrode is excellent in thermal stability and realizes a desired work function. In the semiconductor device, a gate insulating film 6 on a silicon substrate 5 has a high-permittivity insulating film formed of a metal oxide, a metal silicate, a metal oxide introduced with nitrogen, or a metal silicate introduced with nitrogen, the gate electrode has a first metal nitride layer 7 provided on the gate insulating film 6 and containing Ti and N, a second metal nitride layer 8 containing Ti and N, and a polycrystalline silicon layer 9, in the first metal nitride layer 7, a molar ratio between Ti and N (N/Ti) is not less than 1.1, and a crystalline orientation X1 is 1.1
摘要翻译：本发明提供一种具有场效应晶体管的半导体器件，该场效应晶体管包括含有金属氮化物层和多晶硅层的栅电极，并且该栅电极具有优异的热稳定性并实现所需的功函数。在半导体装置中，硅基板5上的栅极绝缘膜6具有由金属氧化物，金属硅酸盐，被引入氮的金属氧化物或导入氮的金属硅酸盐形成的高电容率绝缘膜，栅电极具有设置在栅极绝缘膜6上并且含有Ti和N的第一金属氮化物层7，含有Ti和N的第二金属氮化物层8和多晶硅层9在第一金属氮化物层7中的摩尔比 Ti和N（N / Ti）不小于1.1，结晶取向X1为1.1

3. 发明申请

US20120199919A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120199919A1
公开(公告)日：2012-08-09
申请号：US13386259
申请日：2010-07-29
申请人： Takashi Nakagawa , Naomu Kitano , Kazuaki Matsuo , Motomu Kosuda , Toru Tatsumi
发明人： Takashi Nakagawa , Naomu Kitano , Kazuaki Matsuo , Motomu Kosuda , Toru Tatsumi
IPC分类号： H01L29/772 , C23C16/503 , C23C16/52 , H01L21/336
CPC分类号： C23C14/0641 , C23C14/0042 , C23C14/0068 , C23C14/225 , C23C14/35 , C23C14/505 , H01L21/28088 , H01L21/28194 , H01L29/4966 , H01L29/517 , H01L29/6659 , H01L29/7833
摘要： A gate electrode achieves a desired work function in a semiconductor device including a field-effect transistor equipped with a gate electrode composed of a metal nitride layer.The semiconductor device includes a silicon substrate and a field-effect transistor provided on the silicon substrate and having a gate insulating film and a gate electrode provided on the gate insulating film. The gate insulating film includes a high-permittivity insulating film formed of a metal oxide, a metal silicate, a metal oxide introduced with nitrogen, or a metal silicate introduced with nitrogen, and the gate electrode includes at least a metal nitride layer containing Ti and N. At least a part which is in contact with the gate insulating film of the metal nitride layer has a molar ratio between Ti and N (N/Ti ratio) of not less than 1.15 and a film density of not less than 4.7 g/cc.
摘要翻译：栅电极在包括具有由金属氮化物层构成的栅电极的场效应晶体管的半导体器件中实现期望的功函数。半导体器件包括硅衬底和设置在硅衬底上并具有栅极绝缘膜和设置在栅极绝缘膜上的栅电极的场效应晶体管。栅极绝缘膜包括由金属氧化物，金属硅酸盐，被引入氮的金属氧化物或引入氮的金属硅酸盐形成的高电容率绝缘膜，并且所述栅电极至少包括含有Ti的金属氮化物层和与金属氮化物层的栅极绝缘膜接触的至少一部分具有Ti和N（N / Ti比）之间的摩尔比不小于1.15，膜密度不小于4.7g / cc。

4. 发明申请

US20120115030A1 Electrode for electricity-storing device, electricity-storing device employing such electrode, and method of manufacturing electrode for electricity-storing device 有权
标题翻译：蓄电装置用电极，使用该电极的蓄电装置及蓄电装置用电极的制造方法
公开(公告)号：US20120115030A1
公开(公告)日：2012-05-10
申请号：US13318000
申请日：2011-11-02
申请人： Kenji Tanaka , Kazuaki Matsuo , Kazuhide Tozuka , Kazuya Okabe
发明人： Kenji Tanaka , Kazuaki Matsuo , Kazuhide Tozuka , Kazuya Okabe
IPC分类号： H01M4/02 , B32B9/00 , B32B9/04 , H01G4/005 , B32B7/02 , B32B3/02 , B05D5/12 , H01M10/02 , B32B15/04 , B32B5/16
CPC分类号： H01M4/366 , H01G11/28 , H01G11/58 , H01G11/86 , H01M2/14 , H01M4/0404 , H01M4/0435 , H01M4/13 , H01M4/139 , H01M4/362 , H01M4/62 , H01M4/661 , H01M10/0525 , H01M10/0587 , H01M10/4235 , Y02E60/122 , Y02E60/13 , Y02P70/54 , Y02T10/7011 , Y02T10/7022 , Y10T428/24488 , Y10T428/2495 , Y10T428/25 , Y10T428/30 , Y10T428/31504 , Y10T428/31678
摘要： An electricity-storing device electrode comprises a current collector foil, an active material layer formed on a surface of the current collector foil, and a high-resistance layer formed on the surface of the current collector foil so as to be adjacent to and in direct contact with the active material layer. At least a portion of the interface between the active material layer and the high-resistance layer, mixed phase is formed where constituents from the two layers intermingle. Presence of the mixed phase at the interface between the active material layer and the high-resistance layer improves the bond between the two adjacent layers. During manufacture and use, there is therefore reduced tendency to experience delamination or loss of the active material layer, the high-resistance layer, and/or other layer(s), such as layer(s) provided for short circuit prevention.
摘要翻译：蓄电装置电极包括集电箔，形成在集电箔的表面上的活性物质层和形成在集电箔的表面上的高电阻层，以与直接接触与活性物质层接触。活性材料层和高电阻层之间的界面的至少一部分形成为混合相，其中来自两层的组分混合。在活性材料层和高电阻层之间的界面存在混合相改善了两个相邻层之间的结合。因此，在制造和使用期间，存在活性物质层，高电阻层和/或其它层（例如提供用于短路防止的层）的分层或损失的趋势。

5. 发明授权

US08956763B2 Electrode for electricity-storing device, electricity-storing device employing such electrode, and method of manufacturing electrode for electricity-storing device 有权
公开(公告)号：US08956763B2
公开(公告)日：2015-02-17
申请号：US13318000
申请日：2011-11-02
申请人： Kenji Tanaka , Kazuaki Matsuo , Kazuhide Tozuka , Kazuya Okabe
发明人： Kenji Tanaka , Kazuaki Matsuo , Kazuhide Tozuka , Kazuya Okabe
IPC分类号： H01M4/64 , H01G11/28 , H01G11/86 , H01M4/04 , H01M4/13 , H01M4/36 , H01M4/62 , H01M2/14 , H01M10/42 , H01M10/0525 , H01M10/0587
摘要： An electricity-storing device electrode includes a current collector foil, an active material layer formed on a surface of the current collector foil, and a high-resistance layer formed on the surface of the current collector foil so as to be adjacent to and in direct contact with the active material layer. At at least a portion of the interface between the active material layer and the high-resistance layer, mixed phase is formed where constituents from the two layers intermingle.

6. 发明申请

US20120058375A1 BATTERY 有权
标题翻译：电池
公开(公告)号：US20120058375A1
公开(公告)日：2012-03-08
申请号：US13224574
申请日：2011-09-02
申请人： Kenji TANAKA , Kazuaki Matsuo , Kazuhide Tozuka , Kazuya Okabe
发明人： Kenji TANAKA , Kazuaki Matsuo , Kazuhide Tozuka , Kazuya Okabe
IPC分类号： H01M2/16 , H01M4/66 , H01M10/05 , H01M4/64 , B82Y30/00
CPC分类号： H01M10/0587 , H01M2/145 , H01M2/1646 , H01M4/13 , H01M4/366 , H01M4/664 , H01M4/667 , Y02E60/122
摘要： Provided is a battery which has less tendency to experience delamination or loss of short circuit prevention layer and/or active material layer during manufacture and use.A battery comprising a laminated electrode assembly in which a positive electrode, a negative electrode, and a separator are laminated together; wherein an alumina-containing layer containing γ-alumina particles is formed on at least one species selected from among the group consisting of the positive electrode, the negative electrode, and the separator. The fact that alumina-containing layer(s) is or are made to contain γ-alumina particles makes it possible to obtain high bond strength between alumina-containing layer(s) and electrode(s) comprising metal(s), current collector(s) and/or active material(s) making up electrode(s), and/or separator(s).
摘要翻译：提供一种电池，其在制造和使用期间具有较少的体验分层或失去防短路层和/或活性材料层的倾向。包括层叠电极组件的电池，其中正电极，负电极和隔板层压在一起; 其中在选自正极，负极和隔膜中的至少一种物质上形成含有γ-氧化铝颗粒的含氧化铝层。含有氧化铝的层或含有γ-氧化铝颗粒的事实使得可以获得含氧化铝层和包含金属，集电体（...）的电极之间的高粘合强度， s）和/或组成电极的活性材料和/或分离器。

7. 发明授权

US09090974B2 Electronic device manufacturing method and sputtering method 有权
标题翻译：电子器件制造方法和溅射法
公开(公告)号：US09090974B2
公开(公告)日：2015-07-28
申请号：US13596734
申请日：2012-08-28
申请人： Nobuo Yamaguchi , Kazuaki Matsuo
发明人： Nobuo Yamaguchi , Kazuaki Matsuo
IPC分类号： C23C14/34 , C23C14/50 , H01J37/34
CPC分类号： H01J37/3441 , C23C14/0068 , C23C14/3407 , C23C14/35 , C23C14/50 , C23C14/505 , C23C14/564 , H01J37/3405 , H01J37/3447 , H01J2237/3323
摘要： An electronic device manufacturing method includes a first step of moving a substrate holder close to a first shield member and locating a first projecting portion formed on the first shield member and having a ring shape and a second projecting portion having a ring shape and formed on a second shield member installed on the surface of the substrate holder at the outer peripheral portion of a substrate at a position to engage with each other in a noncontact state, a second step of, after the first step, sputtering a target while maintaining the first projecting portion and the second projecting portion at the position to engage with each other in the noncontact state, and a third step of, after the second step, setting the first shield member in an open state and sputtering the target to perform deposition on the substrate.
摘要翻译：一种电子设备制造方法，包括：第一步骤，使基板保持器靠近第一屏蔽部件移动，并且定位形成在第一屏蔽部件上的具有环形的第一突出部分和具有环形的第二突出部分，并形成在第二屏蔽构件，其安装在基板保持件的表面上，在基板的外周部分处于非接触状态下彼此接合的位置;第二步骤，在第一步骤之后，溅射靶，同时保持第一突出部分和第二突出部分在非接触状态下彼此接合的位置，以及第三步骤，在第二步骤之后，将第一屏蔽构件设置在打开状态，并溅射靶以在基板上进行沉积。

8. 发明授权

US09034152B2 Reactive sputtering apparatus 有权
标题翻译：反应溅射装置
公开(公告)号：US09034152B2
公开(公告)日：2015-05-19
申请号：US13310230
申请日：2011-12-02
申请人： Nobuo Yamaguchi , Kazuaki Matsuo , Susumu Akiyama , Satoshi Uchino , Yoshimitsu Shimane
发明人： Nobuo Yamaguchi , Kazuaki Matsuo , Susumu Akiyama , Satoshi Uchino , Yoshimitsu Shimane
IPC分类号： H01J37/34 , C23C14/00
CPC分类号： H01J37/3244 , C23C14/0063 , C23C14/0068 , H01J37/3405 , H01J37/3411 , H01J37/3441 , H01J37/3447 , H01J2237/3328
摘要： A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.
摘要翻译：反应性溅射装置包括室，设置在室中的基板保持器，设置在室中并构造成保持目标的目标保持器，设置在室中的沉积屏蔽板，以在第二区域之间形成溅射空间，目标保持架和基板支架，防止溅射粒子附着在室内壁;反应性气体引入管，被配置为将溅射空间引入反应气体;将惰性气体引入到惰性气体导入口落在溅射空间内部和室内的空间，以及防止溅射颗粒从溅射中安装在靶保持体上的靶的溅射粒子附着在反应性气体导入管的导入口上的屏蔽部件。

9. 发明授权

US08992743B2 Sputtering method and sputtering apparatus 有权
标题翻译：溅射方法和溅射装置
公开(公告)号：US08992743B2
公开(公告)日：2015-03-31
申请号：US13483370
申请日：2012-05-30
申请人： Nobuo Yamaguchi , Kazuaki Matsuo
发明人： Nobuo Yamaguchi , Kazuaki Matsuo
IPC分类号： C23C14/50 , C23C14/00 , C23C14/34 , C23C14/56 , H01J37/34
CPC分类号： C23C14/505 , C23C14/0063 , C23C14/3492 , C23C14/564 , H01J37/3408 , H01J37/3447
摘要： This invention provides a sputtering method which can generate an electric discharge under practical conditions and maintain the pressure in a plasma space uniform, and a sputtering apparatus used for the same. The sputtering method includes a first gas introduction step (step S403) of introducing a process gas from a first gas introduction port formed in a sputtering space defined by a deposition shield plate, a substrate holder, and the target which are disposed in a process chamber, a voltage application step (step S407) of applying a voltage to the target after the first gas introduction step, and a second gas introduction step (step S405) of introducing a process gas from a second gas introduction port formed outside the sputtering space.
摘要翻译：本发明提供一种溅射方法，其可以在实际条件下产生放电并保持等离子体空间中的压力均匀，并且使用溅射方法。溅射方法包括：第一气体导入步骤（步骤S403），其从形成在由沉积屏蔽板，基板保持器和靶材定义的溅射空间中的第一气体导入口引入处理气体，所述第一气体导入口设置在处理室，在第一气体导入工序之后，向目标物施加电压的电压施加步骤（步骤S407），以及从形成在溅射空间外部的第二气体导入口引入处理气体的第二气体导入工序（步骤S405）。

10. 发明授权

US08986891B2 Electrode for electricity-storing device, electricity-storing device employing such electrode, and method of manufacturing electrode for electricity-storing device 有权
标题翻译：蓄电装置用电极，使用该电极的蓄电装置及蓄电装置用电极的制造方法
公开(公告)号：US08986891B2
公开(公告)日：2015-03-24
申请号：US13318000
申请日：2011-11-02
申请人： Kenji Tanaka , Kazuaki Matsuo , Kazuhide Tozuka , Kazuya Okabe
发明人： Kenji Tanaka , Kazuaki Matsuo , Kazuhide Tozuka , Kazuya Okabe
IPC分类号： H01M4/64 , H01G11/28 , H01G11/86 , H01M4/04 , H01M4/13 , H01M4/36 , H01M4/62 , H01M2/14 , H01M10/42 , H01M10/0525 , H01M10/0587
CPC分类号： H01M4/366 , H01G11/28 , H01G11/58 , H01G11/86 , H01M2/14 , H01M4/0404 , H01M4/0435 , H01M4/13 , H01M4/139 , H01M4/362 , H01M4/62 , H01M4/661 , H01M10/0525 , H01M10/0587 , H01M10/4235 , Y02E60/122 , Y02E60/13 , Y02P70/54 , Y02T10/7011 , Y02T10/7022 , Y10T428/24488 , Y10T428/2495 , Y10T428/25 , Y10T428/30 , Y10T428/31504 , Y10T428/31678
摘要： An electricity-storing device electrode includes a current collector foil, an active material layer formed on a surface of the current collector foil, and a high-resistance layer formed on the surface of the current collector foil so as to be adjacent to and in direct contact with the active material layer. At at least a portion of the interface between the active material layer and the high-resistance layer, mixed phase is formed where constituents from the two layers intermingle.
摘要翻译：蓄电装置电极包括集电箔，形成在集电箔的表面上的活性物质层和形成在集电箔的表面上的高电阻层，以与直接与活性物质层接触。在活性材料层和高电阻层之间的界面的至少一部分上形成混合相，其中来自两层的组分混合。

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