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1. 发明申请

US20110018100A1 CAPACITOR, SEMICONDUCTOR DEVICE COMPRISING THE SAME, METHOD FOR MANUFACTURING THE CAPACITOR, AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE 失效
标题翻译：电容器，包括其的半导体器件，用于制造电容器的方法，以及制造半导体器件的方法
公开(公告)号：US20110018100A1
公开(公告)日：2011-01-27
申请号：US12933946
申请日：2009-03-27
申请人： Takashi Nakagawa , Kaoru Mori , Nobuyuki Ikarashi , Makiko Oshida
发明人： Takashi Nakagawa , Kaoru Mori , Nobuyuki Ikarashi , Makiko Oshida
IPC分类号： H01L27/08 , H01L21/02
CPC分类号： H01L21/3142 , H01L21/02178 , H01L21/02189 , H01L21/02194 , H01L21/022 , H01L21/02271 , H01L21/0228 , H01L21/316 , H01L27/10811 , H01L27/10852 , H01L28/40
摘要： Provided is a capacitor that realizes a capacitance insulation film having a large relative permittivity and has sufficient capacitance even if an occupied space is small with a reduced amount of leakage current. A capacitor includes: a capacitance insulation film; and an upper electrode and lower electrode each formed on both sides of the capacitance insulation film. The capacitance insulation film is a complex oxide whose main ingredients are Zr, Al and O with the composition ratio of Zr to Al being set at (1−x): x (0.01≦x≦0.15) and is composed of a dielectric substance having a crystal structure. The lower electrode is composed of a conductor whose surface contiguous to at least the dielectric film has an amorphous structure.
摘要翻译：提供一种电容器，其实现具有大的相对介电常数的电容绝缘膜，并且即使占用空间小，漏电流减少，也具有足够的电容。电容器包括：电容绝缘膜; 以及各自形成在电容绝缘膜的两侧的上电极和下电极。电容绝缘膜是主要成分为Zr，Al和O的复合氧化物，Zr与Al的组成比设定为（1-x）：x（0.01＆nlE; x＆nlE; 0.15），由介电材料具有晶体结构。下电极由与至少电介质膜相邻的表面具有非晶结构的导体构成。

2. 发明授权

US08368175B2 Capacitor, semiconductor device having the same, and method of producing them 失效
标题翻译：具有相同的电容器，半导体器件及其制造方法
公开(公告)号：US08368175B2
公开(公告)日：2013-02-05
申请号：US12933946
申请日：2009-03-27
申请人： Takashi Nakagawa , Kaoru Mori , Nobuyuki Ikarashi , Makiko Oshida
发明人： Takashi Nakagawa , Kaoru Mori , Nobuyuki Ikarashi , Makiko Oshida
IPC分类号： H01L21/02 , H01L21/8242
CPC分类号： H01L21/3142 , H01L21/02178 , H01L21/02189 , H01L21/02194 , H01L21/022 , H01L21/02271 , H01L21/0228 , H01L21/316 , H01L27/10811 , H01L27/10852 , H01L28/40
摘要： Provided is a capacitor that realizes a capacitance insulation film having a large relative permittivity and has sufficient capacitance even if an occupied space is small with a reduced amount of leakage current. A capacitor includes: a capacitance insulation film; and an upper electrode and lower electrode each formed on both sides of the capacitance insulation film. The capacitance insulation film is a complex oxide whose main ingredients are Zr, Al and O with the composition ratio of Zr to Al being set at (1−x): x (0.01≦x≦0.15) and is composed of a dielectric substance having a crystal structure. The lower electrode is composed of a conductor whose surface contiguous to at least the dielectric film has an amorphous structure.
摘要翻译：提供一种电容器，其实现具有大的相对介电常数的电容绝缘膜，并且即使占用空间小，漏电流减少，也具有足够的电容。电容器包括：电容绝缘膜; 以及各自形成在电容绝缘膜的两侧的上电极和下电极。电容绝缘膜是主要成分为Zr，Al和O的复合氧化物，Zr与Al的组成比设定为（1-x）：x（0.01＆nlE; x＆nlE; 0.15），由介电材料具有晶体结构。下电极由与至少电介质膜相邻的表面具有非晶结构的导体构成。

3. 发明授权

US08203176B2 Dielectric, capacitor using dielectric, semiconductor device using dielectric, and manufacturing method of dielectric 有权
标题翻译：电介质，使用电介质的电容器，使用电介质的半导体器件，以及电介质的制造方法
公开(公告)号：US08203176B2
公开(公告)日：2012-06-19
申请号：US12526238
申请日：2008-02-04
申请人： Takashi Nakagawa , Toru Tatsumi , Nobuyuki Ikarashi , Makiko Oshida
发明人： Takashi Nakagawa , Toru Tatsumi , Nobuyuki Ikarashi , Makiko Oshida
IPC分类号： H01L21/00
CPC分类号： H01L21/02178 , C01G25/00 , C01P2002/72 , C01P2006/40 , C04B35/4885 , C04B35/6325 , C04B2235/44 , C23C16/40 , H01B3/10 , H01L21/02189 , H01L21/02194 , H01L21/022 , H01L21/02271 , H01L21/0228 , H01L21/28194 , H01L21/3142 , H01L21/31604 , H01L21/31616 , H01L21/31641 , H01L27/1085 , H01L28/40 , H01L29/517 , H01L29/7833
摘要： To make it possible to significantly suppress the leakage current in a semiconductor device having a capacitor structure using a dielectric film. There is provided a composite oxide dielectric which is mainly composed of Zr, Al and O, and which has a composition ratio of Zr and Al in a range of (1−x):x where 0.01≦x≦0.15, and has a crystal structure. When the dielectric is set to have the Al composition in the above described range and is crystallized, the relative dielectric constant of the dielectric can be significantly increased. When the dielectric is used as a dielectric film of a capacitor of a semiconductor device, the leakage current of the capacitor can be significantly reduced.
摘要翻译：为了能够显着地抑制具有使用电介质膜的电容器结构的半导体器件中的漏电流。提供了主要由Zr，Al和O组成的复合氧化物电介质，其组成比为（1-x）：x，其中0.01和nlE; x＆晶体结构。当电介质被设定为具有上述范围内的Al组成并且被结晶时，电介质的相对介电常数可以显着提高。当电介质用作半导体器件的电容器的电介质膜时，电容器的漏电流可以显着降低。

4. 发明授权

US07968463B2 Formation method of metallic compound layer, manufacturing method of semiconductor device, and formation apparatus for metallic compound layer 有权
标题翻译：金属化合物层的形成方法，半导体装置的制造方法以及金属化合物层的形成装置
公开(公告)号：US07968463B2
公开(公告)日：2011-06-28
申请号：US12227714
申请日：2007-05-21
申请人： Takashi Nakagawa , Toru Tatsumi , Makiko Oshida , Nobuyuki Ikarashi , Kensuke Takahashi , Kenzo Manabe
发明人： Takashi Nakagawa , Toru Tatsumi , Makiko Oshida , Nobuyuki Ikarashi , Kensuke Takahashi , Kenzo Manabe
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L21/28052 , H01L21/28097 , H01L29/665
摘要： A formation method of a metallic compound layer includes preparing, in a chamber, a substrate having a surface on which a semiconductor material of silicon, germanium, or silicon germanium is exposed, and forming a metallic compound layer, includes: supplying a raw material gas containing a metal for forming a metallic compound with the semiconductor material to the chamber; heating the substrate to a temperature at which the raw material gas is pyrolyzed; and forming a metallic compound layer by reaction of the metal with the semiconductor material so that no layer of the metal is deposited on the substrate. A manufacturing method of a semiconductor device employs this formation method of a metallic compound layer.
摘要翻译：金属化合物层的形成方法包括在室内制备具有硅，锗或硅锗的半导体材料露出的表面的基板，形成金属化合物层，包括：供给原料气体含有用于与所述室形成具有所述半导体材料的金属化合物的金属; 将基板加热到原料气体被热解的温度; 以及通过金属与半导体材料的反应形成金属化合物层，使得金属层不沉积在基板上。半导体器件的制造方法采用这种金属化合物层的形成方法。

5. 发明申请

US20100320520A1 DIELECTRIC, CAPACITOR USING DIELECTRIC, SEMICONDUCTOR DEVICE USING DIELECTRIC, AND MANUFACTURING METHOD OF DIELECTRIC 有权
标题翻译：使用电介质的电介质，电容器，使用介质的半导体器件以及电介质的制造方法
公开(公告)号：US20100320520A1
公开(公告)日：2010-12-23
申请号：US12526238
申请日：2008-02-04
申请人： Takashi Nakagawa , Toru Tatsumi , Nobuyuki Ikarashi , Makiko Oshida
发明人： Takashi Nakagawa , Toru Tatsumi , Nobuyuki Ikarashi , Makiko Oshida
IPC分类号： H01L27/06 , H01G4/06 , C04B35/48 , B05D5/12
CPC分类号： H01L21/02178 , C01G25/00 , C01P2002/72 , C01P2006/40 , C04B35/4885 , C04B35/6325 , C04B2235/44 , C23C16/40 , H01B3/10 , H01L21/02189 , H01L21/02194 , H01L21/022 , H01L21/02271 , H01L21/0228 , H01L21/28194 , H01L21/3142 , H01L21/31604 , H01L21/31616 , H01L21/31641 , H01L27/1085 , H01L28/40 , H01L29/517 , H01L29/7833
摘要： To make it possible to significantly suppress the leakage current in a semiconductor device having a capacitor structure using a dielectric film. There is provided a composite oxide dielectric which is mainly composed of Zr, Al and O, and which has a composition ratio of Zr and Al in a range of (1−x):x where 0.01≦x≦0.15, and has a crystal structure. When the dielectric is set to have the Al composition in the above described range and is crystallized, the relative dielectric constant of the dielectric can be significantly increased. When the dielectric is used as a dielectric film of a capacitor of a semiconductor device, the leakage current of the capacitor can be significantly reduced.
摘要翻译：为了能够显着地抑制具有使用电介质膜的电容器结构的半导体器件中的漏电流。提供了主要由Zr，Al和O组成的复合氧化物电介质，其组成比为（1-x）：x，其中0.01和nlE; x＆晶体结构。当电介质被设定为具有上述范围内的Al组成并且被结晶时，电介质的相对介电常数可以显着提高。当电介质用作半导体器件的电容器的电介质膜时，电容器的漏电流可以显着降低。

6. 发明申请

US20090170252A1 Formation method of metallic compound layer, manufacturing method of semiconductor device, and formation apparatus for metallic compound layer 有权
标题翻译：金属化合物层的形成方法，半导体装置的制造方法以及金属化合物层的形成装置
公开(公告)号：US20090170252A1
公开(公告)日：2009-07-02
申请号：US12227714
申请日：2007-05-21
申请人： Takashi Nakagawa , Toru Tatsumi , Makiko Oshida , Nobuyuki Ikarashi , Kensuke Takahashi , Kenzo Manabe
发明人： Takashi Nakagawa , Toru Tatsumi , Makiko Oshida , Nobuyuki Ikarashi , Kensuke Takahashi , Kenzo Manabe
IPC分类号： H01L21/8234 , B05C11/00 , H01L21/285
CPC分类号： H01L21/28518 , H01L21/28052 , H01L21/28097 , H01L29/665
摘要： A formation method of a metallic compound layer includes preparing, in a chamber, a substrate having a surface on which a semiconductor material of silicon, germanium, or silicon germanium is exposed, and forming a metallic compound layer, includes: supplying a raw material gas containing a metal for forming a metallic compound with the semiconductor material to the chamber; heating the substrate to a temperature at which the raw material gas is pyrolyzed; and forming a metallic compound layer by reaction of the metal with the semiconductor material so that no layer of the metal is deposited on the substrate. A manufacturing method of a semiconductor device employs this formation method of a metallic compound layer.
摘要翻译：金属化合物层的形成方法包括在室内制备具有硅，锗或硅锗的半导体材料露出的表面的基板，形成金属化合物层，包括：供给原料气体含有用于与所述室形成具有所述半导体材料的金属化合物的金属; 将基板加热到原料气体被热解的温度; 以及通过金属与半导体材料的反应形成金属化合物层，使得金属层不沉积在基板上。半导体器件的制造方法采用这种金属化合物层的形成方法。

7. 发明申请

US20100084713A1 Semiconductor device manufacturing method and semiconductor device 审中-公开
标题翻译：半导体器件制造方法和半导体器件
公开(公告)号：US20100084713A1
公开(公告)日：2010-04-08
申请号：US12311428
申请日：2007-09-27
申请人： Takashi Nakagawa , Toru Tatsumi , Kenzo Manabe , Kensuke Takahashi , Makiko Oshida
发明人： Takashi Nakagawa , Toru Tatsumi , Kenzo Manabe , Kensuke Takahashi , Makiko Oshida
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L21/823835 , H01L21/28079 , H01L21/823842 , H01L29/4975 , H01L29/66545 , H01L29/7833
摘要： A second mask is provided so as to cover a second gate pattern and a first gate pattern is heated to a temperature at which a material gas containing a first metal thermally decomposes, polysilicon constituting the first gate pattern is reacted with the first metal for silicidation under the conditions that the layer of the first metal does not deposit, and thus the first gate pattern is turned into a first gate electrode constituted by a silicide of the first metal. After the second mask is removed, a first mask is provided so as to cover the first electrode and the second gate pattern is heated to a temperature at which the material gas thermally decomposes, polysilicon constituting the second gate pattern is reacted with the first metal for silicidation under the conditions that the layer of the first metal does not deposit, and thus the second gate pattern is turned into a second gate electrode constituted by the silicide of the first metal. Then, the first mask is removed. With such a manufacturing method, a silicide layer is formed without adding an annealing process.
摘要翻译：提供第二掩模以覆盖第二栅极图案，并且将第一栅极图案加热到含有第一金属的材料气体热分解的温度，构成第一栅极图案的多晶硅与第一金属进行硅化反应第一金属层不沉积的条件，因此第一栅极图案变成由第一金属的硅化物构成的第一栅电极。在去除第二掩模之后，提供第一掩模以覆盖第一电极，并且将第二栅极图案加热到材料气体热分解的温度，构成第二栅极图案的多晶硅与第一金属反应，在第一金属层不沉积的条件下进行硅化，因此第二栅极图案变成由第一金属的硅化物构成的第二栅电极。然后，删除第一个掩模。通过这样的制造方法，不添加退火处理而形成硅化物层。

8. 发明申请

US20110038094A1 CAPACITOR 审中-公开
标题翻译：电容器
公开(公告)号：US20110038094A1
公开(公告)日：2011-02-17
申请号：US12937916
申请日：2009-04-16
申请人： Kaoru Mori , Takashi Nakagawa
发明人： Kaoru Mori , Takashi Nakagawa
IPC分类号： H01G4/008 , H01G4/00
CPC分类号： H01G4/008 , H01G4/12 , H01G4/33
摘要： A capacitor includes a plurality of laminated thin layers, has a structure in which a lower electrode layer, a dielectric layer and an upper electrode layer are laminated in sequence, a main material of the lower electrode layer is TiN or ZrN, the lower electrode layer contains oxygen, and concentration of the oxygen contained in the lower electrode layer is less than 21 at %.
摘要翻译：电容器包括多个层叠薄层，具有下电极层，电介质层和上电极层依次层叠的结构，下电极层的主要材料为TiN或ZrN，下电极层含有氧，下部电极层中所含的氧的浓度小于21原子％。

9. 发明授权

US08928010B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08928010B2
公开(公告)日：2015-01-06
申请号：US13397058
申请日：2012-02-15
申请人： Shunpei Yamazaki , Takayuki Ikeda , Takeshi Aoki , Munehiro Kozuma , Takashi Nakagawa
发明人： Shunpei Yamazaki , Takayuki Ikeda , Takeshi Aoki , Munehiro Kozuma , Takashi Nakagawa
IPC分类号： H01L33/08 , H01L27/112 , H01L51/50 , H01L27/32 , H01L27/12
CPC分类号： H01L27/3262 , H01L27/1225 , H01L27/1266 , H01L27/322
摘要： A display device includes a pixel area including pixels arranged in a matrix and having a horizontal resolution of 350 ppi or more and a color filter layer overlapping with the pixel area. The pixels each include a first transistor whose gate is electrically connected to a scan line and whose one of a source and a drain is electrically connected to a signal line; a second transistor whose gate is electrically connected to the other of the source and the drain of the first transistor and whose one of a source and a drain is electrically connected to a current-supplying line; and a light-emitting element electrically connected to the other of the source and the drain of the second transistor. The first and second transistors each have a channel formation region including a single crystal semiconductor.
摘要翻译：显示装置包括像素区域，包括排列成矩阵并具有350ppi以上的水平分辨率的像素和与像素区域重叠的滤色器层的像素。像素各自包括第一晶体管，栅极电连接到扫描线并且其源极和漏极中的一个电连接到信号线; 第二晶体管，其栅极电连接到第一晶体管的源极和漏极中的另一个，并且源极和漏极中的一个电连接到电流线; 以及电连接到第二晶体管的源极和漏极中的另一个的发光元件。第一和第二晶体管各自具有包括单晶半导体的沟道形成区域。

10. 发明授权

US08786031B2 Metal nitride film, semiconductor device using the metal nitride film, and manufacturing method of semiconductor device 有权
标题翻译：金属氮化物膜，使用该金属氮化物膜的半导体器件，以及半导体器件的制造方法
公开(公告)号：US08786031B2
公开(公告)日：2014-07-22
申请号：US13036664
申请日：2011-02-28
申请人： Takashi Nakagawa , Naomu Kitano
发明人： Takashi Nakagawa , Naomu Kitano
IPC分类号： H01L21/02 , H01L21/44
CPC分类号： H01L21/28282 , C23C14/0641 , G11C13/0007 , H01L21/28088 , H01L29/4966 , H01L29/6656 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1608 , H01L45/1625
摘要： The present invention provides a metal nitride film that realizes an intended effective work function (for example, a high effective work function) and has EOT exhibiting no change or a reduced change, a semiconductor device using the metal nitride film, and a manufacturing method of the semiconductor device. The metal nitride film according to an embodiment of the present invention contains Ti, Al and N, wherein the metal nitride film has such molar fractions of Ti, Al and N as (N/(Ti+Al+N)) of 0.53 or more, (Ti/(Ti+Al+N)) of 0.32 or less, and (Al/(Ti+Al+N)) of 0.15 or less.
摘要翻译：本发明提供一种金属氮化物膜，其实现了预期的有效功函数（例如，高有效功函数），并且具有没有变化或减小的变化的EOT，使用该金属氮化物膜的半导体器件及其制造方法半导体器件。根据本发明实施方案的金属氮化物膜包含Ti，Al和N，其中，作为（N /（Ti + Al + N））的Ti，Al和N的摩尔分数为0.53以上的金属氮化物膜，（Ti /（Ti + Al + N））为0.32以下，（Al /（Ti + Al + N））为0.15以下。

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