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1. 发明授权

US07884407B2 Semiconductor device, its manufacturing method and electronic apparatus thereof 有权
标题翻译：半导体装置及其制造方法及其电子装置
公开(公告)号：US07884407B2
公开(公告)日：2011-02-08
申请号：US12362346
申请日：2009-01-29
申请人： Takashi Nagano , Yasushi Morita
发明人： Takashi Nagano , Yasushi Morita
IPC分类号： H01L21/8238
CPC分类号： H01L27/14609 , H01L21/82385 , H01L21/823864 , H01L27/092 , H01L27/10873 , H01L27/10894 , H01L27/14689
摘要： The present invention proposes a semiconductor device, its manufacturing method and to an electronic apparatus thereof equipped with the semiconductor device where it becomes possible to make a CMOS type solid-state imaging device, an imager area formed with a MOS transistor of an LDD structure without having a metal silicide layer of a refractory metal, an area of DRAM cells and the like into a single semiconductor chip. According to the present invention, a semiconductor device is constituted such that an insulating film having a plurality of layers is used, sidewalls at the gate electrodes are formed by etching back the insulating film of the plurality of layers or a single layer film in the region where metal silicide layers are formed and in the region where the metal silicide layers are not formed, sidewalls composed of an upper layer insulating film is formed on a lower layer insulating film whose surface is coated or the insulating film of the plurality of layers remain unchanged.
摘要翻译：本发明提出一种半导体器件及其制造方法及其电子设备，其中可以制造CMOS型固态成像器件，形成有LDD结构的MOS晶体管的成像器区域的半导体器件没有具有难熔金属的金属硅化物层，DRAM单元的面积等形成单个半导体芯片。根据本发明，半导体器件被构成为使用具有多个层的绝缘膜，通过蚀刻多个层的绝缘膜或在该区域中的单层膜来形成栅电极的侧壁在形成金属硅化物层的地方，并且在未形成金属硅化物层的区域中，由上层绝缘膜构成的侧壁形成在其表面被涂覆的下层绝缘膜上，或者多层绝缘膜保持不变。

2. 发明授权

US09748289B2 Semiconductor device, its manufacturing method and electronic apparatus thereof 有权
公开(公告)号：US09748289B2
公开(公告)日：2017-08-29
申请号：US11705519
申请日：2007-02-12
申请人： Takashi Nagano , Yasushi Morita
发明人： Takashi Nagano , Yasushi Morita
IPC分类号： H01L21/8238 , H01L27/146 , H01L27/092 , H01L27/108
CPC分类号： H01L27/14609 , H01L21/82385 , H01L21/823864 , H01L27/092 , H01L27/10873 , H01L27/10894 , H01L27/14689
摘要： The present invention proposes a semiconductor device, its manufacturing method and to an electronic apparatus thereof equipped with the semiconductor device where it becomes possible to make a CMOS type solid-state imaging device, an imager area formed with a MOS transistor of an LDD structure without having a metal silicide layer of a refractory metal, an area of DRAM cells and the like into a single semiconductor chip. According to the present invention, a semiconductor device is constituted such that an insulating film having a plurality of layers is used, sidewalls at the gate electrodes are formed by etchingback the insulating film of the plurality of layers or a single layer film in the region where metal silicide layers are formed and in the region where the metal silicide layers are not formed, sidewalls composed of an upper layer insulating film is formed on a lower layer insulating film whose surface is coated or the insulating film of the plurality of layers remain unchanged.

3. 发明授权

US07683414B2 Semiconductor device, its manufacturing method and electronic apparatus thereof 有权
标题翻译：半导体装置及其制造方法及其电子装置
公开(公告)号：US07683414B2
公开(公告)日：2010-03-23
申请号：US11705349
申请日：2007-02-12
申请人： Takashi Nagano , Yasushi Morita
发明人： Takashi Nagano , Yasushi Morita
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L21/82385 , H01L21/823864 , H01L27/092 , H01L27/10873 , H01L27/10894 , H01L27/14689
摘要： The present invention proposes a semiconductor device, its manufacturing method and to an electronic apparatus thereof equipped with the semiconductor device where it becomes possible to make a CMOS type solid-state imaging device, an imager area formed with a MOS transistor of an LDD structure without having a metal silicide layer of a refractory metal, an area of DRAM cells and the like into a single semiconductor chip. According to the present invention, a semiconductor device is constituted such that an insulating film having a plurality of layers is used, sidewalls at the gate electrodes are formed by etchingback the insulating film of the plurality of layers or a single layer film in the region where metal silicide layers are formed and in the region where the metal silicide layers are not formed, sidewalls composed of an upper layer insulating film is formed on a lower layer insulating film whose surface is coated or the insulating film of the plurality of layers remain unchanged.
摘要翻译：本发明提出一种半导体器件及其制造方法及其电子设备，其中可以制造CMOS型固态成像器件，形成有LDD结构的MOS晶体管的成像器区域的半导体器件没有具有难熔金属的金属硅化物层，DRAM单元的面积等形成单个半导体芯片。根据本发明，半导体器件被构成为使用具有多个层的绝缘膜，在栅电极处的侧壁通过蚀刻多层绝缘膜或在单层膜的区域中形成单层膜来形成形成金属硅化物层，并且在不形成金属硅化物层的区域中，在其表面被涂覆的下层绝缘膜上或多层的绝缘膜保持不变的情况下，形成由上层绝缘膜构成的侧壁。

4. 发明授权

US07235835B2 Semiconductor device and its manufacturing method, and electronic device 有权
标题翻译：半导体器件及其制造方法和电子器件
公开(公告)号：US07235835B2
公开(公告)日：2007-06-26
申请号：US10483882
申请日：2003-05-14
申请人： Takashi Nagano , Yasushi Morita
发明人： Takashi Nagano , Yasushi Morita
IPC分类号： H01L21/8238
CPC分类号： H01L27/14609 , H01L21/82385 , H01L21/823864 , H01L27/092 , H01L27/10873 , H01L27/10894 , H01L27/14689
摘要： The present invention proposes a semiconductor device, its manufacturing method and to an electronic apparatus thereof equipped with the semiconductor device where it becomes possible to make a CMOS type solid-state imaging device, an imager area formed with a MOS transistor of an LDD structure without having a metal silicide layer of a refractory metal, an area of DRAM cells and the like into a single semiconductor chip. According to the present invention, a semiconductor device is constituted such that an insulating film having a plurality of layers is used, sidewalls at the gate electrodes are formed by etching back the insulating film of the plurality of layers or a single layer film in the region where metal silicide layers are formed and in the region where the metal silicide layers are not formed, sidewalls composed of an upper layer insulating film is formed on a lower layer insulating film whose surface is coated or the insulating film of the plurality of layers remain unchanged.
摘要翻译：本发明提出一种半导体器件及其制造方法及其电子设备，其中可以制造CMOS型固态成像器件，形成有LDD结构的MOS晶体管的成像器区域的半导体器件没有具有难熔金属的金属硅化物层，DRAM单元的面积等形成单个半导体芯片。根据本发明，半导体器件被构成为使用具有多个层的绝缘膜，通过蚀刻多个层的绝缘膜或在该区域中的单层膜来形成栅电极的侧壁在形成金属硅化物层的地方，并且在未形成金属硅化物层的区域中，由上层绝缘膜构成的侧壁形成在其表面被涂覆的下层绝缘膜上，或者多层绝缘膜保持不变。

5. 发明申请

US20070141772A1 Semiconductor device, its manufacturing method and electronic apparatus thereof 有权
标题翻译：半导体装置及其制造方法及其电子装置
公开(公告)号：US20070141772A1
公开(公告)日：2007-06-21
申请号：US11705519
申请日：2007-02-12
申请人： Takashi Nagano , Yasushi Morita
发明人： Takashi Nagano , Yasushi Morita
IPC分类号： H01L21/8238
CPC分类号： H01L27/14609 , H01L21/82385 , H01L21/823864 , H01L27/092 , H01L27/10873 , H01L27/10894 , H01L27/14689
摘要： The present invention proposes a semiconductor device, its manufacturing method and to an electronic apparatus thereof equipped with the semiconductor device where it becomes possible to make a CMOS type solid-state imaging device, an imager area formed with a MOS transistor of an LDD structure without having a metal silicide layer of a refractory metal, an area of DRAM cells and the like into a single semiconductor chip. According to the present invention, a semiconductor device is constituted such that an insulating film having a plurality of layers is used, sidewalls at the gate electrodes are formed by etchingback the insulating film of the plurality of layers or a single layer film in the region where metal silicide layers are formed and in the region where the metal silicide layers are not formed, sidewalls composed of an upper layer insulating film is formed on a lower layer insulating film whose surface is coated or the insulating film of the plurality of layers remain unchanged.
摘要翻译：本发明提出一种半导体器件及其制造方法及其电子设备，其中可以制造CMOS型固态成像器件，形成有LDD结构的MOS晶体管的成像器区域的半导体器件没有具有难熔金属的金属硅化物层，DRAM单元的面积等形成单个半导体芯片。根据本发明，半导体器件被构成为使用具有多个层的绝缘膜，在栅电极处的侧壁通过蚀刻多层绝缘膜或在单层膜的区域中形成单层膜来形成形成金属硅化物层，并且在不形成金属硅化物层的区域中，在其表面被涂覆的下层绝缘膜上或多层的绝缘膜保持不变的情况下，形成由上层绝缘膜构成的侧壁。

6. 发明申请

US20070138568A1 Semiconductor device, Its manufacturing method and electronic apparatus thereof 有权
标题翻译：半导体装置及其制造方法及其电子装置
公开(公告)号：US20070138568A1
公开(公告)日：2007-06-21
申请号：US11705349
申请日：2007-02-12
申请人： Takashi Nagano , Yasushi Morita
发明人： Takashi Nagano , Yasushi Morita
IPC分类号： H01L29/94
CPC分类号： H01L27/14609 , H01L21/82385 , H01L21/823864 , H01L27/092 , H01L27/10873 , H01L27/10894 , H01L27/14689
摘要： The present invention proposes a semiconductor device, its manufacturing method and to an electronic apparatus thereof equipped with the semiconductor device where it becomes possible to make a CMOS type solid-state imaging device, an imager area formed with a MOS transistor of an LDD structure without having a metal silicide layer of a refractory metal, an area of DRAM cells and the like into a single semiconductor chip. According to the present invention, a semiconductor device is constituted such that an insulating film having a plurality of layers is used, sidewalls at the gate electrodes are formed by etchingback the insulating film of the plurality of layers or a single layer film in the region where metal silicide layers are formed and in the region where the metal silicide layers are not formed, sidewalls composed of an upper layer insulating film is formed on a lower layer insulating film whose surface is coated or the insulating film of the plurality of layers remain unchanged.
摘要翻译：本发明提出一种半导体器件及其制造方法及其电子设备，其中可以制造CMOS型固态成像器件，形成有LDD结构的MOS晶体管的成像器区域的半导体器件没有具有难熔金属的金属硅化物层，DRAM单元的面积等形成单个半导体芯片。根据本发明，半导体器件被构成为使用具有多个层的绝缘膜，在栅电极处的侧壁通过蚀刻多层绝缘膜或在单层膜的区域中形成单层膜来形成形成金属硅化物层，并且在不形成金属硅化物层的区域中，在其表面被涂覆的下层绝缘膜上或多层的绝缘膜保持不变的情况下，形成由上层绝缘膜构成的侧壁。

7. 发明授权

US08860099B2 Solid-state imaging device and method for manufacturing solid-state imaging device, and electronic device 有权
标题翻译：固态成像装置及其制造方法，固态成像装置及电子装置
公开(公告)号：US08860099B2
公开(公告)日：2014-10-14
申请号：US12881643
申请日：2010-09-14
申请人： Keiji Tatani , Fumihiko Koga , Takashi Nagano
发明人： Keiji Tatani , Fumihiko Koga , Takashi Nagano
IPC分类号： H01L31/062 , H01L31/113 , H01L27/146
CPC分类号： H01L27/14612 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/1463 , H01L27/14636 , H01L27/14641 , H01L27/14643 , H01L27/14689
摘要： A solid-state imaging device includes a first-conductivity-type semiconductor well region, a plurality of pixels each of which is formed on the semiconductor well region and is composed of a photoelectric conversion portion and a pixel transistor, an element isolation region provided between the pixels and in the pixels, and an element isolation region being free from an insulation film and being provided between desired pixel transistors.
摘要翻译：固体摄像器件包括第一导电型半导体阱区，多个像素，每个像素形成在半导体阱区上，由光电转换部和像素晶体管组成，元件隔离区设置在像素和像素中的元件隔离区域以及不含绝缘膜的元件隔离区域，并且设置在期望的像素晶体管之间。

8. 发明申请

US20140088039A1 OPHTHALMIC SOLUTION CONTAINING HYALURONIC ACID OR SALT THEREOF AND PROPYLENE GLYCOL 审中-公开
标题翻译：含有羟丙酸或其盐和丙二醇的眼科溶液
公开(公告)号：US20140088039A1
公开(公告)日：2014-03-27
申请号：US14116459
申请日：2012-06-22
申请人： Koji Inagaki , Toshihiro Ogawa , Yoshihide Horibe , Atsuyoshi Dota , Takashi Nagano , Masatsugu Nakamura , Yuichiro Nakada
发明人： Koji Inagaki , Toshihiro Ogawa , Yoshihide Horibe , Atsuyoshi Dota , Takashi Nagano , Masatsugu Nakamura , Yuichiro Nakada
IPC分类号： A61K47/08 , A61K47/18 , A61K9/00 , A61K31/728
CPC分类号： A61K47/08 , A61K9/0048 , A61K9/08 , A61K31/728 , A61K47/10 , A61K47/186 , A61K47/36
摘要： An aqueous ophthalmic solution containing hyaluronic acid or a salt thereof at a concentration from 0.03 to 0.5% (w/v) and propylene glycol at a concentration from 0.1 to 1.0% (w/v) comprises as a sole preservative, benzalkonium chloride at a concentration from 0.001 to 0.002% (w/v) and comprises an ionic tonicity agent at such a concentration that an osmotic pressure ratio of the ophthalmic solution becomes from 0.9 to 1.1.
摘要翻译：含有浓度为0.03至0.5％（w / v）的透明质酸或其盐和浓度为0.1至1.0％（w / v）的丙二醇的眼用水溶液包含作为唯一防腐剂，苯扎氯铵浓度从0.001至0.002％（w / v），并且包含浓度使得眼用溶液的渗透压比为0.9至1.1的浓度的离子张力剂。

9. 发明申请

US20130172287A1 AGENT FOR TREATMENT OF DRY EYE CHARACTERIZED BY COMBINING P2Y2 RECEPTOR AGONIST AND HYALURONIC ACID OR SALT THEREOF, METHOD FOR TREATING DRY EYE, AND USE OF THE P2Y2 RECEPTOR AGONIST AND HYALURONIC ACID OR SALT THEREOF 有权
标题翻译：用于治疗P2Y2受体激动剂和其盐酸或其盐组合的干眼剂的治疗剂，用于治疗干眼症的方法和使用P2Y2受体激动剂及其盐酸或其盐
公开(公告)号：US20130172287A1
公开(公告)日：2013-07-04
申请号：US13821717
申请日：2011-09-09
申请人： Yuko Shichijo , Atsuyoshi Dota , Takashi Nagano , Masatsugu Nakamura , Asuka Sakamoto
发明人： Yuko Shichijo , Atsuyoshi Dota , Takashi Nagano , Masatsugu Nakamura , Asuka Sakamoto
IPC分类号： A61K31/728 , A61K31/7068 , A61K31/7072 , A61K31/7076
CPC分类号： A61K31/728 , A61K31/675 , A61K31/7068 , A61K31/7072 , A61K31/7076 , A61K45/06 , A61K2300/00
摘要： An agent for treatment of dry eye comprising a combination of a P2Y2 receptor agonist at a therapeutically effective concentration and hyaluronic acid or a salt thereof at a therapeutically effective concentration, which agent has a dosage form of an ophthalmic agent, can promote the secretion of tear remarkably and can improve corneal epithelial disorders remarkably, and is therefore expected to be a novel agent for treatment of dry eye.
摘要翻译：一种用于治疗干眼症的药物，其包括治疗有效浓度的P2Y2受体激动剂和透明质酸或其盐的治疗有效浓度的组合，该药剂具有眼用剂型，可促进泪液的分泌明显地可以改善角膜上皮疾病，因此预期它们是用于治疗干眼症的新型药剂。

10. 发明申请

US20120165273A1 EYE DROPS 有权
标题翻译：眼药水
公开(公告)号：US20120165273A1
公开(公告)日：2012-06-28
申请号：US13394194
申请日：2010-09-24
申请人： Takahiro Nakamura , Yuichiro Nakada , Takashi Nagano , Masatsugu Nakamura
发明人： Takahiro Nakamura , Yuichiro Nakada , Takashi Nagano , Masatsugu Nakamura
IPC分类号： A61K38/07 , A61P27/02
CPC分类号： A61K38/07 , A61K9/0048 , C07K5/1013 , C07K5/1016 , A61K2300/00
摘要： An eyedrop containing a peptide having an amino acid sequence represented by Ser-Ser-Ser-Arg (“SSSR”), or a pharmacologically acceptable salt thereof; and a peptide having an amino acid sequence represented by Phe-Gly-Leu-Met-NH2 (“FGLM”), or a pharmacologically acceptable salt thereof. The concentration ratio between SSSR or a pharmacologically acceptable salt thereof and FGLM or a pharmacologically acceptable salt thereof is between 1/15 and 1/50. The concentration of SSSR or a pharmacologically acceptable salt thereof is between 0.001% and 0.3% (w/v) and the concentration of FGLM or a pharmacologically acceptable salt thereof is between 0.015% and 1.5% (w/V). The pH of the eye drop is maintained between 2.5 and 6.5.
摘要翻译：含有具有由Ser-Ser-Ser-Arg（“SSSR”）表示的氨基酸序列的肽或其药理学上可接受的盐的滴眼剂; 和具有由Phe-Gly-Leu-Met-NH 2（“FGLM”）表示的氨基酸序列的肽或其药理学上可接受的盐。 SSSR或其药理学上可接受的盐与FGLM或其药理学上可接受的盐之间的浓度比为1/15至1/50。 SSSR或其药理学上可接受的盐的浓度为0.001％至0.3％（w / v），并且FGLM或其药理学上可接受的盐的浓度为0.015％至1.5％（w / V）。滴眼液的pH值保持在2.5至6.5之间。

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