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1. 发明授权

US5108948A Method of producing a semiconductor device having a disordered superlattice using an epitaxial solid diffusion source 失效
标题翻译：使用外延固体扩散源生产具有异常超导体的半导体器件的方法
公开(公告)号：US5108948A
公开(公告)日：1992-04-28
申请号：US272493
申请日：1988-11-17
申请人： Takashi Murakami , Kanamf Otaki , Hisao Kumabe
发明人： Takashi Murakami , Kanamf Otaki , Hisao Kumabe
IPC分类号： H01L21/223 , H01L21/18 , H01S5/00 , H01S5/20 , H01S5/34
CPC分类号： B82Y20/00 , H01L21/182 , H01S5/20 , H01S5/34 , H01S5/2059 , Y10S148/037 , Y10S148/095
摘要： A method of producing a semiconductor device such as a semiconductor laser having a controllably disordered superlattice. The superlattice is grown epitaxially and in the same epitaxial growth process a heavily selenium doped semiconductor layer is also grown in a known spatial relationship to the superlattice. The doped layer is patterned as by etching and then the device is annealed to diffuse selenium impurities from the doped layer. The time and temperature of annealing are controlled such that the impurities diffuse into and thereby disorder regions of the superlattice layer, leaving a non-disordered region which can serve as a resonator in a laser.

2. 发明授权

US5031185A Semiconductor device having a disordered superlattice 失效
标题翻译：具有无序超晶格的半导体器件
公开(公告)号：US5031185A
公开(公告)日：1991-07-09
申请号：US599368
申请日：1990-10-18
申请人： Takashi Murakami , Kaname Otaki , Hisao Kumabe
发明人： Takashi Murakami , Kaname Otaki , Hisao Kumabe
IPC分类号： H01L33/00 , H01L33/06 , H01S5/34
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/0062 , H01S5/34
摘要： A method of producing a semiconductor device such as a semiconductor laser having a controllably disordered superlattice. The superlattice is grown epitaxially and in the same epitaxial growth process a heavily selenium doped semiconductor layer is also grown in a known spatial relationship to the superlattice. The doped layer is patterned as by etching and then the device is annealed to diffuse selenium impurities from the doped layer. The time and temperature of annealing are controlled such that the impurities diffuse into and thereby disorder regions of the superlattice layer, leaving a nondisordered region which can serve as a resonator in a laser.
摘要翻译：一种制造半导体器件的方法，例如具有可控制的无序超晶格的半导体激光器。超晶格外延生长，并且在相同的外延生长工艺中，重度硒掺杂的半导体层也以与超晶格的已知空间关系生长。通过蚀刻将掺杂层图案化，然后将器件退火以从掺杂层扩散硒杂质。控制退火的时间和温度使得杂质扩散到超晶格层的无序区域中，留下可用作激光器中的谐振器的非无序区域。

3. 发明授权

US5510272A Method for fabricating solar cell 失效
标题翻译：制造太阳能电池的方法
公开(公告)号：US5510272A
公开(公告)日：1996-04-23
申请号：US352118
申请日：1994-12-01
申请人： Hiroaki Morikawa , Hisao Kumabe
发明人： Hiroaki Morikawa , Hisao Kumabe
IPC分类号： H01L31/04 , H01L31/0352 , H01L31/18
CPC分类号： H01L31/1892 , H01L31/035281 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521 , Y10S136/29 , Y10S148/125 , Y10S148/128 , Y10S148/135 , Y10S148/153 , Y10S438/958 , Y10S438/977
摘要： In a method of producing a solar cell, a photovoltaic thin semiconductor crystalline film is formed on an underlying substrate and hydrogen passivated throughout the film thickness direction of the photovoltaic film whereby a high efficiency solar cell is obtained. In addition, since the passivation process is performed before forming a rear surface electrode on the thin semiconductor crystalline film, the passivation process is not limited by the rear surface electrode. Thereby, a solar cell having a higher energy conversion efficiency is obtained. The passivation process is performed by exposing the thin semiconductor crystalline film to a hydrogen ion ambient having a low acceleration energy, below 2 KeV, or to a plasma ambient. Therefore, the uniformity of the passivation process at a wafer surface is improved and a large area wafer can be efficient processed. Furthermore, the passivation process can be performed to a plurality of solar cells having the thin semiconductor crystalline films and arranged in a module.
摘要翻译：在制造太阳能电池的方法中，在下层基板上形成光电薄膜半导体结晶膜，在光电膜的整个膜厚方向上氢钝化，得到高效率的太阳能电池。此外，由于在薄半导体结晶膜上形成后表面电极之前进行钝化处理，所以钝化处理不受背面电极的限制。从而获得具有较高能量转换效率的太阳能电池。通过将薄半导体晶体膜暴露于具有低加速能量，低于2KeV的氢离子环境或者等离子体环境来进行钝化处理。因此，晶片表面的钝化处理的均匀性得到改善，可以有效地处理大面积晶片。此外，可以对具有薄半导体晶体膜并且布置在模块中的多个太阳能电池执行钝化处理。

4. 发明授权

US4890292A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4890292A
公开(公告)日：1989-12-26
申请号：US338341
申请日：1989-04-13
申请人： Hisao Kumabe
发明人： Hisao Kumabe
IPC分类号： H01S5/00 , H01S5/042 , H01S5/16 , H01S5/223
CPC分类号： H01S5/2232 , H01S5/16
摘要： Disclosed herein is a semiconductor laser device capable of exhibiting very low threshold current and operating in a fundamental transverse mode stably even at a high power operation, and a method for fabricating the same. The fabricating method includes only two crystal growth steps to thereby produce the semiconductor laser device capable of operating in the fundamental transverse mode at high power operation. The thus obtained device has high reproducability due to the simple fabricating process.
摘要翻译：这里公开了能够显示非常低的阈值电流并且即使在高功率操作下稳定地以基本横向模式工作的半导体激光器件及其制造方法。该制造方法仅包括两个晶体生长步骤，从而产生能够在大功率操作下以基本横模工作的半导体激光器件。这样得到的装置由于简单的制造工艺而具有高的再现性。

5. 发明授权

US4750184A Semiconductor laser device of refractive index guide type 失效
$Semiconductor laser device of refractive index guide type$
标题翻译：折射率导向型半导体激光器件
公开(公告)号：US4750184A
公开(公告)日：1988-06-07
申请号：US30897
申请日：1987-03-25
申请人： Hisao Kumabe
发明人： Hisao Kumabe
IPC分类号： H01S5/00 , H01S5/223 , H01S3/19
CPC分类号： H01S5/2232 , H01S5/2234 , H01S5/2237
摘要： A semiconductor laser device comprises a semiconductor substrate of the first conductive type, with a groove, the width of the bottom of which is greater than that of the top, a current blocking layer of the second conducting type, formed on said semiconductor substrate discontinuously at both sidewalls of said groove, a lower side cladding layer of the first conductive type for covering said current blocking layer and the sidewalls of said groove, an active layer formed on said lower side cladding layer and having an band gap smaller than that of said lower side cladding layer and a large refractive index, an upper side cladding layer of the second conductive type formed on said active layer and having an band gap greater than that of the active layer and a small refractive index, and a contact layer of the second conductive type formed on said upper cladding layer so that it is possible to easily grow a high quality crystal repeatedly with merely one crystal growth process and that the laser device has a stable fundamental transverse-mode operation, a low threshold current and small astigmatisms.
摘要翻译：半导体激光器件包括第一导电类型的半导体衬底，其凹槽的底部的宽度大于顶部的宽度，第二导电类型的电流阻挡层不连续地形成在所述半导体衬底上所述槽的两个侧壁，用于覆盖所述电流阻挡层和所述槽的侧壁的第一导电类型的下侧包覆层，形成在所述下侧包覆层上并具有小于所述下部覆层的带隙的有源层所述第二导电类型的上侧包层形成在所述有源层上并且具有大于有源层的带隙和小的折射率的带隙，以及所述第二导电类型的接触层形成在所述上包层上，使得可以通过仅一个晶体生长过程和该t重复地容易地重现高质量的晶体他的激光器件具有稳定的基本横向模式操作，低阈值电流和小散光。

6. 发明授权

US4841532A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US4841532A
公开(公告)日：1989-06-20
申请号：US119340
申请日：1987-11-10
申请人： Hisao Kumabe , Wataru Susaki
发明人： Hisao Kumabe , Wataru Susaki
IPC分类号： H01S5/00 , H01S5/16
CPC分类号： H01S5/164 , Y10S148/095 , Y10S148/168
摘要： A method for producing a semiconductor laser which comprises sequentially depositing a lower cladding layer, an active layer, and an upper cladding layer on a substrate, forming a V shaped groove in the deposited layers at least reaching the lower cladding layer, the groove extending in a direction perpendicular to the direction between the surfaces that are to become resonator end surfaces, growing a semiconductor layer having a larger energy band gap than that of the active layer in the groove while retaining the V shaped groove, and cleaving the substrate and layers along the V shaped groove.
摘要翻译：一种制造半导体激光器的方法，包括在基板上依次沉积下包层，有源层和上包层，在沉积层中形成至少到达下包层的V形槽，所述凹槽在垂直于要成为谐振器端面的表面之间的方向的方向，在保持V形槽的同时生长具有比沟槽中的有源层的能带隙更大的能带隙的半导体层，并且沿着 V形槽。

7. 发明授权

US4592061A Transverse junction stripe laser with steps at the end faces 失效
标题翻译：横向连接条纹激光器，端面处有台阶
公开(公告)号：US4592061A
公开(公告)日：1986-05-27
申请号：US411188
申请日：1982-08-25
申请人： Hisao Kumabe , Toshio Sogo , Saburo Takamiya
发明人： Hisao Kumabe , Toshio Sogo , Saburo Takamiya
IPC分类号： H01S5/00 , H01S5/16 , H01S5/22 , H01S3/19
CPC分类号： H01S5/16 , H01S5/2203
摘要： A semiconductor laser is provided with an active layer which is bent at an angle at both ends of the resonator so that both ends of the waveguide path are formed by semiconductor cladding layers. The structure is effective in increasing the obtainable optical density while decreasing absorption at the waveguide ends.
摘要翻译：半导体激光器设置有在谐振器的两端以一定角度弯曲的有源层，使得波导路径的两端由半导体包覆层形成。该结构在增加可获得的光密度同时减少波导末端的吸收是有效的。

8. 发明授权

US06096569A Method of and apparatus for manufacturing thin solar battery 失效
标题翻译：薄型太阳能电池的制造方法和装置
公开(公告)号：US06096569A
公开(公告)日：2000-08-01
申请号：US201660
申请日：1998-12-01
申请人： Yoshinori Matsuno , Yoshitatsu Kawama , Hiroaki Morikawa , Satoshi Arimoto , Hisao Kumabe , Toshio Murotani
发明人： Yoshinori Matsuno , Yoshitatsu Kawama , Hiroaki Morikawa , Satoshi Arimoto , Hisao Kumabe , Toshio Murotani
IPC分类号： H01L31/04 , H01L31/042 , H01L31/18
CPC分类号： H01L31/0504 , H01L31/022441 , H01L31/048 , H01L31/0516 , H01L31/1892 , Y02E10/50
摘要： A process of forming electrodes is simplified during modularizing of a solar battery. According to the manufacturing method and the manufacturing apparatus, a thin solar battery is manufactured at a reduced cost and with a better yield. Using a robot which includes a suction chip which can handle a semiconductor film 2 without any damage which is separated from a particular substrate 1, the semiconductor films 2 are each accurately placed through a transparent resin 3 onto a glass substrate 7 which serves as a window of a solar battery, and p-type and n-type electrodes are printed at a time on the semiconductor films 2 which are arranged. Further, since a monolithic tab electrode is soldered to connect the electrodes, the manufacturing processes of the solar battery are simplified.
摘要翻译：在太阳能电池的模块化期间简化了形成电极的工艺。根据制造方法和制造装置，以更低的成本和更好的产量制造薄的太阳能电池。使用包括能够处理半导体膜2而不会从特定基板1分离的任何损伤的吸引芯片的机器人，将半导体膜2分别通过透明树脂3准确地放置在作为窗口的玻璃基板7上的太阳能电池，并且在配置的半导体膜2上一次印刷p型和n型电极。此外，由于整体式接片电极被焊接以连接电极，所以太阳能电池的制造工艺被简化。

9. 发明授权

US5665607A Method for producing thin film solar cell 失效
标题翻译：薄膜太阳能电池的制造方法
公开(公告)号：US5665607A
公开(公告)日：1997-09-09
申请号：US258745
申请日：1994-06-10
申请人： Yoshitatsu Kawama , Mikio Deguchi , Shigeru Mitsui , Hideo Naomoto , Satoshi Arimoto , Satoshi Hamamoto , Hiroaki Morikawa , Hisao Kumabe
发明人： Yoshitatsu Kawama , Mikio Deguchi , Shigeru Mitsui , Hideo Naomoto , Satoshi Arimoto , Satoshi Hamamoto , Hiroaki Morikawa , Hisao Kumabe
IPC分类号： H01L21/205 , H01L31/0224 , H01L31/0352 , H01L31/04 , H01L31/18 , H01L31/0368
CPC分类号： H01L31/1892 , H01L31/022425 , H01L31/03529 , H01L31/18 , H01L31/1804 , H01L31/1896 , Y02E10/547 , Y02P70/521 , Y10S438/977
摘要： In a method for fabricating a thin film solar cell, a thin semiconductor film serving as a power generating layer is formed on a substrate via an intermediate layer, a plurality of holes are formed penetrating through the thin semiconductor film and reaching the intermediate layer, and the intermediate layer is etched away through the through-holes, separating the thin semiconductor film from the substrate with high-efficiency. Since stress is hardly applied to the thin semiconductor film during the separation process, cracking and breaking of the semiconductor film is avoided. Further, since the surface of the substrate is maintained in good condition, the substrate can be reused, resulting in a reduction in the production cost.
摘要翻译：在制造薄膜太阳能电池的方法中，通过中间层在基板上形成用作发电层的薄半导体膜，穿过薄半导体膜形成多个孔并到达中间层，并且通过通孔蚀刻中间层，从而高效地将薄的半导体膜与基板分离。由于在分离工序中难以对薄的半导体膜施加应力，因此避免了半导体膜的破裂和断裂。此外，由于基板的表面保持良好状态，因此可以重新使用基板，导致生产成本的降低。

10. 发明授权

US5637510A Method for fabricating solar cell 失效
标题翻译：制造太阳能电池的方法
公开(公告)号：US5637510A
公开(公告)日：1997-06-10
申请号：US596414
申请日：1996-02-02
申请人： Hiroaki Morikawa , Hisao Kumabe
发明人： Hiroaki Morikawa , Hisao Kumabe
IPC分类号： H01L31/04 , H01L31/0352 , H01L31/18
CPC分类号： H01L31/1892 , H01L31/035281 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521 , Y10S136/29 , Y10S148/125 , Y10S148/128 , Y10S148/135 , Y10S148/153 , Y10S438/958 , Y10S438/977
摘要： In a method of producing a solar cell, a photovoltaic thin semiconductor crystalline film is formed on an underlying substrate and hydrogen passivated throughout the film thickness direction of the photovoltaic film whereby a high efficiency solar cell is obtained. In addition, since the passivation process is performed before forming a rear surface electrode on the thin semiconductor crystalline film, the passivation process is not limited by the rear surface electrode. Thereby, a solar cell having a higher energy conversion efficiency is obtained. The passivation process is performed by exposing the thin semiconductor crystalline film to a hydrogen ion ambient having a low acceleration energy, below 2 KeV, or to a plasma ambient. Therefore, the uniformity of the passivation process at a wafer surface is improved and a large area wafer can be efficient processed. Furthermore, the passivation process can be performed to a plurality of solar cells having the thin semiconductor crystalline films and arranged in a module.
摘要翻译：在制造太阳能电池的方法中，在下层基板上形成光电薄膜半导体结晶膜，在光电膜的整个膜厚方向上氢钝化，得到高效率的太阳能电池。此外，由于在薄半导体结晶膜上形成后表面电极之前进行钝化处理，所以钝化处理不受背面电极的限制。从而获得具有较高能量转换效率的太阳能电池。通过将薄半导体晶体膜暴露于具有低加速能量，低于2KeV的氢离子环境或者等离子体环境来进行钝化处理。因此，晶片表面的钝化处理的均匀性得到改善，可以有效地处理大面积晶片。此外，可以对具有薄半导体晶体膜并且布置在模块中的多个太阳能电池执行钝化处理。

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