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1. 发明授权

US4151011A Process of producing semiconductor thermally sensitive switching element by selective implantation of inert ions in thyristor structure 失效
标题翻译：通过在晶闸管结构中选择性地注入惰性离子来制造半导体热敏开关元件的工艺
公开(公告)号：US4151011A
公开(公告)日：1979-04-24
申请号：US924830
申请日：1978-07-14
申请人： Yutaka Mihashi , Josuke Nakata , Toshio Sogo , Kenichi Yamanaka
发明人： Yutaka Mihashi , Josuke Nakata , Toshio Sogo , Kenichi Yamanaka
IPC分类号： H01L35/00 , H01L21/265 , H01L29/66 , H01L29/74 , H01L35/34 , H01L23/56
CPC分类号： H01L29/66992 , H01L21/26506 , H01L29/7436
摘要： A planar pnpn thyristor structure is prepared to include an SiO.sub.2 film with a thickness of about 10,000A wholly disposed on its main face to which pn junctions are exposed. That portion of the SiO.sub.2 film underlaid with an exposed edge of a collector junction and its adjacent portion are replaced by another SiO.sub.2 film about 1,000A thick. Then argon ions Ar.sup.+ with an implantation energy of 200 KeV are implanted into the thyristor structure through both films to permit a low lifetime region including a large number of lattice defects to be formed only in its main face portion overlaid with the thin SiO.sub.2 film resulting in a semiconductor thermally sensitive switching element effecting the switchover at a sufficiently low temperature.
摘要翻译：制备平面pnpn晶闸管结构，其包括厚度大约为10,000A的SiO 2膜，其整体设置在其暴露pn结的主面上。用集电极结的暴露边缘及其相邻部分覆盖的SiO 2膜的那部分被另外的具有约1,000A厚度的SiO 2膜替代。然后通过两个膜将注入能量为200 KeV的氩离子Ar +注入到晶闸管结构中，以允许仅在其与SiO 2薄膜重叠的主面部分中形成包括大量晶格缺陷的低寿命区域，从而导致半导体热敏开关元件在足够低的温度下进行切换。

2. 发明授权

US4592061A Transverse junction stripe laser with steps at the end faces 失效
标题翻译：横向连接条纹激光器，端面处有台阶
公开(公告)号：US4592061A
公开(公告)日：1986-05-27
申请号：US411188
申请日：1982-08-25
申请人： Hisao Kumabe , Toshio Sogo , Saburo Takamiya
发明人： Hisao Kumabe , Toshio Sogo , Saburo Takamiya
IPC分类号： H01S5/00 , H01S5/16 , H01S5/22 , H01S3/19
CPC分类号： H01S5/16 , H01S5/2203
摘要： A semiconductor laser is provided with an active layer which is bent at an angle at both ends of the resonator so that both ends of the waveguide path are formed by semiconductor cladding layers. The structure is effective in increasing the obtainable optical density while decreasing absorption at the waveguide ends.
摘要翻译：半导体激光器设置有在谐振器的两端以一定角度弯曲的有源层，使得波导路径的两端由半导体包覆层形成。该结构在增加可获得的光密度同时减少波导末端的吸收是有效的。

3. 发明授权

US6021149A Optical semiconductor module 失效
标题翻译：光半导体模块
公开(公告)号：US6021149A
公开(公告)日：2000-02-01
申请号：US61346
申请日：1998-04-17
申请人： Yasunori Miyazaki , Toshio Sogo
发明人： Yasunori Miyazaki , Toshio Sogo
IPC分类号： G02B6/42 , G02B6/122 , G02F1/015 , H01S5/00 , H01S5/022 , H01S5/026 , H01S5/042 , H01S5/062 , H01S3/19
CPC分类号： H01S5/0265 , H01S5/0425 , H01S5/06226
摘要： An optical semiconductor module includes a substrate including a first plate member having strip lines for high-frequency signal transmission, located on a surface of the substrate and a second plate member including a feeding line on a surface, the first plate member having a loss angle at high frequencies smaller than that of the second plate member, and the second plate member including a material with a higher heat conductivity than that of the first plate member. The optical semiconductor module includes an integrated semiconductor laser and modulator including a modulator region having surface electrodes on a surface, and a laser region having a surface electrode on a surface, with an optical axis extending along the optical axis of the modulator region. The integrated semiconductor laser and modulator are located on the substrate such that the surface electrodes of the modulator region are bonded to the strip lines and the surface electrode of the laser region is bonded to the feeding line.
摘要翻译：一种光学半导体模块，包括：基板，具有位于基板的表面上的具有用于高频信号传输的带状线的第一板状部件和在表面上具备供电线的第二板状部件，所述第一板状部件具有损失角在比第二板构件低的高频处，并且第二板构件包括具有比第一板构件的导热性更高的导热性的材料。光学半导体模块包括集成半导体激光器和调制器，其包括在表面上具有表面电极的调制器区域和在表面上具有表面电极的激光区域，光轴沿着调制器区域的光轴延伸。集成半导体激光器和调制器位于基板上，使得调制器区域的表面电极结合到带状线，激光区域的表面电极结合到馈电线。

4. 发明授权

US4353754A Thermo-sensitive switching element manufacturing method 失效
标题翻译：热敏开关元件制造方法
公开(公告)号：US4353754A
公开(公告)日：1982-10-12
申请号：US175568
申请日：1980-08-06
申请人： Kenichi Yamanaka , Yutaka Mihashi , Toshio Sogo
发明人： Kenichi Yamanaka , Yutaka Mihashi , Toshio Sogo
IPC分类号： H01L35/00 , H01L21/265 , H01L21/322 , H01L21/324 , H01L29/32 , H01L29/66 , H01L29/74 , H01L23/56
CPC分类号： H01L29/66992 , H01L21/26506 , H01L21/3221 , H01L21/324 , H01L29/32 , H01L29/74
摘要： A thermo-sensitive semiconductor element having a four-layer pnpn structure. A defect layer is formed at the junction of the p base layer and the n base layer by implantation of argon ions to provide a semiconductor element having a desired thermo-sensitive characteristic. The element is subjected to heat treatment such as annealing at temperatures in a range of from 400.degree. C. to 900.degree. C. in a nitrogen atmosphere after the argon ion implantation so that the leakage current into the element having the defect layer is controlled.
摘要翻译：具有四层pnpn结构的热敏半导体元件。通过注入氩离子在p基极层和n基极层的接合处形成缺陷层，以提供具有期望的热敏特性的半导体元件。对该元件进行热处理，例如在氩离子注入后，在氮气气氛中，在400〜900℃的温度范围内进行退火，从而控制进入具有缺陷层的元件的漏电流。

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