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1. 发明授权

US5547654A Self-adhesive carbonaceous grains and high density carbon artifacts derived therefrom 失效
标题翻译：自粘碳质颗粒和由此产生的高密度碳伪影
公开(公告)号：US5547654A
公开(公告)日：1996-08-20
申请号：US301038
申请日：1994-09-06
申请人： Isao Machida , Ryuji Fujiura , Takashi Kojima , Hitoshi Sakamoto
发明人： Isao Machida , Ryuji Fujiura , Takashi Kojima , Hitoshi Sakamoto
IPC分类号： C04B35/528 , C04B35/83 , C01B31/02
CPC分类号： C04B35/528 , C04B35/83
摘要： Self-adhesive carbonaceous grains for use in the production of high density carbon artifacts and high performance carbon-carbon composites are made by processes such as oxidation and heat treatment of specific mesophase pitches. The present carbonaceous grains exhibit excellent binding properties, shape stability when molded, and high density with higher carbonization yield, providing very high strength artifacts when their properties fall within the specific range of properties defined by their H/C and O/C values. High density carbon artifacts can be easily obtained by molding the grains and carbonizing or graphitizing the same.
摘要翻译：用于生产高密度碳伪影和高性能碳 - 碳复合材料的自粘碳质颗粒通过诸如特定中间相沥青的氧化和热处理的方法制备。本发明的碳质颗粒表现出优异的粘合性能，当模塑时的形状稳定性，以及高密度和较高的碳化收率，当它们的性能落在由其H / C和O / C值定义的特定特性范围内时，提供非常高的强度伪影。高密度碳伪影可以通过模制成型并使其碳化或石墨化而容易地获得。

2. 发明授权

US5279777A Process for the production of friction materials 失效
标题翻译：摩擦材料生产工艺
公开(公告)号：US5279777A
公开(公告)日：1994-01-18
申请号：US967426
申请日：1992-10-28
申请人： Takashi Kojima , Hitoshi Sakamoto , Nobuo Kamioka , Hiroshi Tokumura
发明人： Takashi Kojima , Hitoshi Sakamoto , Nobuo Kamioka , Hiroshi Tokumura
IPC分类号： C09K3/14 , F16D69/02 , B29C43/56 , C01B31/02
CPC分类号： F16D69/026
摘要： A process for producing a friction material under low-temperature conditions using, as a reinforcement, one or more fibers selected from a metal fiber, an organic fiber and an inorganic fiber and, as a binder, a compounded pitch that consists of a mesophase pitch and sulfur and/or an aromatic nitro compound. The content of an optically anisotropic phase in the mesophase pitch is at least 80% and the softening point of the mesophase pitch is not higher than 270.degree. C. The friction material produced exhibits consistent friction characteristics over a broad temperature range.
摘要翻译：一种在低温条件下使用选自金属纤维，有机纤维和无机纤维中的一种或多种纤维作为增强材料制造摩擦材料的方法，作为粘合剂，由中间相沥青组成的复合沥青和硫和/或芳族硝基化合物。中间相沥青中光学各向异性相的含量至少为80％，中间相沥青的软化点不高于270℃。产生的摩擦材料在宽温度范围内表现出一致的摩擦特性。

3. 发明授权

US5372702A Composition for use in the production of composite carbon materials, composition carbon material produced therefrom, and process for producing the same 失效
标题翻译：用于生产复合碳材料的组合物，由其制备的组合物碳材料及其制备方法
公开(公告)号：US5372702A
公开(公告)日：1994-12-13
申请号：US871917
申请日：1992-04-22
申请人： Takashi Kojima , Hitoshi Sakamoto
发明人： Takashi Kojima , Hitoshi Sakamoto
IPC分类号： C01B31/02 , C04B35/52 , C04B35/532 , C04B35/83 , C10C3/00 , C08L95/00
CPC分类号： C04B35/532 , C04B35/83
摘要： The improved composition for use in the production of composite carbon materials comprises a mesophase pitch containing at least 80% of an optical anisotropic phase and having a softening point of no higher than 250.degree. C., and sulfur present in an amount of 6-35 parts by weight per 100 parts by weight of said mesophase pitch. Said composition may be heated together with an aggregate and subsequently shaped to yield a composite carbon material. The improved process for producing a composite carbon material comprises impregnating an aggregate with said composition as it is melted, shaping the mixture in a temperature range of 150.degree.-350.degree. C, and then carbonizing the shaped part.
摘要翻译：用于生产复合碳材料的改进的组合物包括含有至少80％的光学各向异性相并且软化点不高于250℃的中间相沥青，并且硫存在量为6-35 每100重量份所述中间相沥青重量份。所述组合物可以与骨料一起加热并随后成型以产生复合碳材料。用于生产复合碳材料的改进方法包括在熔融时将组合物浸渍在所述组合物中，在150-350℃的温度范围内使混合物成形，然后使成形部分碳化。

4. 发明授权

US5609800A Process for producing high-density and high-strength carbon artifacts showing a fine mosaic texture of optical anisotropy 失效
标题翻译：用于生产高密度和高强度碳伪影的方法，其显示光学各向异性的细微马赛克纹理
公开(公告)号：US5609800A
公开(公告)日：1997-03-11
申请号：US529439
申请日：1995-09-18
申请人： Isao Mochida , Ryuji Fujiura , Takashi Kojima , Hitoshi Sakamoto
发明人： Isao Mochida , Ryuji Fujiura , Takashi Kojima , Hitoshi Sakamoto
IPC分类号： C04B35/528 , C10C3/00 , C01B31/02
CPC分类号： C04B35/528 , C10C3/00
摘要： Self-adhesive carbonaceous grains for use in the manufacture of high-density and high-strength carbon artifacts containing 0.5-1.5 wt % of a quinoline-soluble but pyridine-insoluble component and at least 97 wt % of a quinoline-insoluble component and which are prepared by heat-treating in a nonoxidizing atmosphere a mesophase pitch that is obtained by polymerizing condensed polycyclic hydrocarbons or substances containing them in the presence of a superacid consisting of hydrogen fluoride and boron trifluoride. The carbonaceous grains are molded and the mold is baked at a sufficient temperature to achieve its carbonization, with the heating rate being not more than 20.degree. C./h in the temperature range from 400 .degree. to 600.degree. C. In this way, high-density and high-strength carbon artifacts showing a homogeneous fine mosaic texture of optical anisotropy can be efficiently manufactured in high carbon yield.
摘要翻译：用于制造含有0.5-1.5重量％喹啉可溶但不溶于吡啶的组分和至少97重量％喹啉不溶组分的高密度和高强度碳伪影的自粘碳质颗粒，其中通过在非氧化性气氛中通过在由氟化氢和三氟化硼组成的超强酸的存在下聚合冷凝的多环烃或含有它们的物质而获得的中间相沥青来制备。碳质颗粒被模制，模具在足够的温度下烘烤以实现其碳化，加热速率在400℃至600℃的温度范围内不超过20℃/小时。这样高可以高产率地有效地制造显示光学各向异性的均匀的细微马赛克纹理的密度和高强度碳伪影。

5. 发明授权

US5484520A Self-adhesive carbonaceous grains and process for producing high-density and high-strength carbon artifacts showing a fine mosaic texture of optical anisotropy derived from such grains 失效
标题翻译：自粘碳质颗粒和用于生产高密度和高强度碳伪影的方法，显示出由这种颗粒衍生的光学各向异性的细微马赛克纹理
公开(公告)号：US5484520A
公开(公告)日：1996-01-16
申请号：US350679
申请日：1994-12-07
申请人： Isao Mochida , Ryuji Fujiura , Takashi Kojima , Hitoshi Sakamoto
发明人： Isao Mochida , Ryuji Fujiura , Takashi Kojima , Hitoshi Sakamoto
IPC分类号： C04B35/528 , C10C3/00 , C10G73/36
CPC分类号： C04B35/528 , C10C3/00
摘要： Self-adhesive carbonaceous grains for use in the manufacture of high-density and high-strength carbon artifacts containing 0.5-1.5 wt % of a quinoline-soluble but pyridine-insoluble component and at least 97 wt % of a quinoline-insoluble component and which are prepared by heat-treating in a nonoxidizing atmosphere a mesophase pitch that is obtained by polymerizing condensed polycyclic hydrocarbons or substances containing them in the presence of a superacid consisting of hydrogen fluoride and boron trifluoride. The carbonaceous grains are molded and the mold is baked at a sufficient temperature to achieve its carbonization, with the heating rate being not more than 20.degree. C./h in the temperature range from 400.degree. to 600.degree. C. In this way, high-density and high-strength carbon artifacts showing a homogeneous fine mosaic texture of optical anisotropy can be efficiently manufactured in high carbon yield.
摘要翻译：用于制造含有0.5-1.5重量％喹啉可溶但不溶于吡啶的组分和至少97重量％喹啉不溶组分的高密度和高强度碳伪影的自粘碳质颗粒，其中通过在非氧化性气氛中通过在由氟化氢和三氟化硼组成的超强酸的存在下聚合冷凝的多环烃或含有它们的物质而获得的中间相沥青来制备。碳质颗粒被模制，模具在足够的温度下烘烤以实现其碳化，加热速率在400℃至600℃的温度范围内不超过20℃/小时。这样高可以高产率地有效地制造显示光学各向异性的均匀的细微马赛克纹理的密度和高强度碳伪影。

6. 发明授权

US09163014B2 Crystals of pyrroloquinolinequinone sodium salts 有权
标题翻译：吡咯喹啉醌钠盐晶体
公开(公告)号：US09163014B2
公开(公告)日：2015-10-20
申请号：US13383472
申请日：2010-06-09
申请人： Junichi Edahiro , Hitoshi Sakamoto , Kazuto Ikemoto , Hajime Shimizu , Tatsuya Hasegawa
发明人： Junichi Edahiro , Hitoshi Sakamoto , Kazuto Ikemoto , Hajime Shimizu , Tatsuya Hasegawa
IPC分类号： C07D471/04 , A23L1/30
CPC分类号： C07D471/04 , A23L33/10 , A23L33/15 , A23V2002/00 , C07B2200/13
摘要： A crystal of pyrroloquinoline quinone disodium salt having peaks at 2θ of 9.1°, 10.3°, 13.8°, 17.7°, 18.3°, 24.0°, 27.4°, 31.2° and 39.5° (±0.2° for each) in powder X-ray diffractometry using Cu Kα radiation, or a crystal of pyrroloquinoline quinone trisodium salt having peaks at 2θ of 6.6°, 11.4°, 13.0°, 22.6°, 26.9°, 27.9°, 37.0°, 38.9° and 43.4° (±0.2° for each) in powder X-ray diffractometry using Cu Kα radiation.
摘要翻译：吡咯并喹啉醌二钠的晶体，其峰值在2℃。在使用CuKα辐射的粉末X射线衍射中，为9.1°，10.3°，13.8°，17.7°，18.3°，24.0°，27.4°，31.2°和39.5°（±0.2°），或吡咯并喹啉喹啉三钠盐在2℃具有峰值; 在使用CuKα辐射的粉末X射线衍射中，为6.6°，11.4°，13.0°，22.6°，26.9°，27.9°，37.0°，38.9°和43.4°（±0.2°）。

7. 发明申请

US20140190738A1 ELECTRONIC SUBSTRATE AND AN ELECTRONIC APPARATUS 有权
标题翻译：电子基板和电子设备
公开(公告)号：US20140190738A1
公开(公告)日：2014-07-10
申请号：US14240348
申请日：2012-08-15
申请人： Hitoshi Sakamoto , Minoru Yoshikawa , Masaki Chiba , Kenichi Inaba , Arihiro Matsunaga
发明人： Hitoshi Sakamoto , Minoru Yoshikawa , Masaki Chiba , Kenichi Inaba , Arihiro Matsunaga
IPC分类号： H05K1/02
CPC分类号： H05K1/021 , F28D15/0266 , G06F1/20 , H05K7/2029
摘要： An electronic substrate 100D has a tabular base material 110 which can install a heater element 120 and the cooling structure that cools the heater element 120. An electronic substrate 100 can be plugged in/out in the case 200 in the direction which is almost parallel to the face of the base material 110. The cooling structure is installed on the tabular base material 110, and has the first heat radiation part 160D with a hollow shape and the heat transfer part 700. The first heat radiation part 160D with a hollow shape radiates the generated heat of the heater element 120 installed in the base material. The heat transfer part 700 transfers the generated heat of the heater element 120 to the first heat radiation part 160D. The first heat radiation part 160D has the first joint surface 165 formed along a face which is almost vertical to the insert and removal direction W of the base material 110. The first heat radiation part 160D is connected to the second radiation part 260B set up in the case 200 thermally through the first joint surface 165. As a result, the generated heat of the heater element can be radiated sufficiently.
摘要翻译：电子基板100D具有片状基材110，其可以安装加热元件120和冷却加热器元件120的冷却结构。电子基板100可以在壳体200中沿几乎平行于基体材料110的表面。冷却结构安装在片状基材110上，并具有中空形状的第一散热部160D和传热部700.具有中空形状的第一散热部160D辐射安装在基材中的加热器元件120产生的热量。传热部700将发热元件120的发热传递到第一散热部160D。第一散热部分160D具有沿着基本材料110的插入和移除方向W几乎垂直的面形成的第一接合表面165.第一散热部分160D连接到设置在第一辐射部分260B中的第二辐射部分260B 壳体200热穿过第一接合表面165.结果，可以充分地辐射加热器元件的产生的热量。

8. 发明申请

US20140027100A1 PIPING STRUCTURE OF COOLING DEVICE, METHOD FOR MAKING THE SAME, AND METHOD FOR CONNECTING PIPES 审中-公开
标题翻译：冷却装置的管道结构，其制造方法以及连接管道的方法
公开(公告)号：US20140027100A1
公开(公告)日：2014-01-30
申请号：US14110671
申请日：2012-04-10
申请人： Minoru Yoshikawa , Hitoshi Sakamoto , Masaki Chiba , Kenichi Inaba , Arihiro Matsunaga
发明人： Minoru Yoshikawa , Hitoshi Sakamoto , Masaki Chiba , Kenichi Inaba , Arihiro Matsunaga
IPC分类号： F28F1/00
CPC分类号： F28F1/00 , F28D15/0266 , F28F1/003 , F28F13/187 , F28F19/04 , F28F21/084 , F28F2255/02
摘要： In a piping structure of a cooling device using an ebullient cooling system, the cooling performance of the cooling device is degraded if the pipe is provided with flexibility, therefore, a piping structure of a cooling device according to an exemplary aspect of the invention includes a first tubular part with a hollow portion through which a refrigerant used in the cooling device flows; wherein the first tubular part is made of metal materials; and the surface roughness of the inner surface of the first tubular part is less than or equal to the size of a condensation nucleus for the refrigerant.
摘要翻译：在使用沸腾冷却系统的冷却装置的配管结构中，如果管道具有柔性，则冷却装置的冷却性能下降，因此根据本发明的示例性方面的冷却装置的管道结构包括第一管状部分，其具有中空部分，冷却装置中使用的制冷剂通过该中空部分流动; 其中所述第一管状部分由金属材料制成; 并且第一管状部的内表面的表面粗糙度小于或等于制冷剂的凝结核的尺寸。

9. 发明授权

US07923374B2 Method and apparatus for production of metal film or the like 有权
标题翻译：金属膜等的制造方法和装置
公开(公告)号：US07923374B2
公开(公告)日：2011-04-12
申请号：US12471743
申请日：2009-05-26
申请人： Hitoshi Sakamoto , Naoki Yahata , Toshihiko Nishimori , Yoshiyuki Ooba , Hiroshi Tonegawa , Ikumasa Koshiro , Yuzuru Ogura
发明人： Hitoshi Sakamoto , Naoki Yahata , Toshihiko Nishimori , Yoshiyuki Ooba , Hiroshi Tonegawa , Ikumasa Koshiro , Yuzuru Ogura
IPC分类号： H01L21/302
CPC分类号： H01J37/321 , C23C16/08 , C23C16/14 , C23C16/4488 , H01J37/32357 , H01J2237/3326 , H01L21/28556 , H01L21/76879
摘要： In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.
摘要翻译：在金属膜制造装置中，在室内用Cl 2气体等离子体蚀刻铜板构件，形成包含Cu成分和Cl 2气体的前体; 并且将铜板构件和基板的温度和它们的温度之间的差异预先控制，以将前体的Cu组分沉积在基板上，从而形成Cu膜。在该装置中，Cl *形成在与腔室内部连通的通道的激励室中以流过Cl 2气体，并且将Cl *供应到室中以从吸附到基板上的前体中抽出Cl 2气体，从而促进Cu成膜反应。该设备具有高的成膜速度，可以使用廉价的起始材料，并且可以最小化残留在膜中的杂质。

10. 发明授权

US07776751B2 Process for producing silicon compound 有权
标题翻译：硅化合物生产工艺
公开(公告)号：US07776751B2
公开(公告)日：2010-08-17
申请号：US11919484
申请日：2006-05-17
申请人： Yoshiyuki Ooba , Hitoshi Sakamoto
发明人： Yoshiyuki Ooba , Hitoshi Sakamoto
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： C23C16/4488 , C01B33/06 , C23C16/325 , C23C16/42 , H01L21/2807 , H01L21/28097 , H01L21/28518 , H01L31/032
摘要： A process for producing a silicon compound can minimize the number of steps and can form a desired compound in a low-temperature environment. The process comprises: allowing a radical of a halogen gas to act on a member 11 to be etched, which is disposed within a chamber 1 and is formed of a material containing an element capable of forming a compound with Si, while keeping the member 11 at a relatively high temperature, to form a gas of a precursor 24, which is a compound of the material and the halogen; holding a substrate 3 accommodated within the chamber 1 at a relatively low temperature, with the Si interface of the substrate 3 being exposed, to adsorb the precursor 24 onto the Si interface of the substrate 3; and then allowing the radical of the halogen gas to act on the precursor 24 adsorbed onto the Si interface to reduce the precursor 24, thereby producing a compound of the material and Si.
摘要翻译：硅化合物的制造方法可以使步骤的数量最少化，并能在低温环境下形成所需化合物。该方法包括：使卤素气体基团作用在要蚀刻的构件11上，该构件设置在室1内，并且由含有能够与Si形成化合物的元素的材料形成，同时保持构件11 在相对高的温度下形成作为该材料和卤素的化合物的前体24的气体; 在相对较低的温度下保持容纳在室1内的基板3，使基板3的Si界面露出，以将前体24吸附到基板3的Si界面上; 然后使卤素气体的基团作用于吸附在Si界面上的前体24上以还原前体24，从而产生该材料和Si的化合物。

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