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1. 发明授权

US5032815A Lamination type inductor 失效
标题翻译：层压型电感
公开(公告)号：US5032815A
公开(公告)日：1991-07-16
申请号：US456748
申请日：1989-12-26
申请人： Takashi Kobayashi , Minoru Tamada , Yoshifumi Yamanaka , Hiroyuki Takeuchi
发明人： Takashi Kobayashi , Minoru Tamada , Yoshifumi Yamanaka , Hiroyuki Takeuchi
IPC分类号： H01F17/00 , H01F41/04
CPC分类号： H01F17/0013
摘要： A lamination type inductor has a plurality of ferrite sheets assembled one above the other and laminated together, the uppermost and lowermost sheets being end sheets having lead-out conductor patterns thereon and conductor patterns on the surfaces of the end sheets which face each other which are connected to the lead-out conductor patterns and which are for connection to conductor patterns on intermediate sheets, and a plurality of intermediate ferrite sheets, each having a conductor pattern on one surface thereof which corresponds to a 0.25 turn of an inductor coil and a conductor pattern on the other surface which corresponds to a 0.5 turn of an inductor coil, each ferrite sheet having an opening therethrough through which the conductor patterns of the 0.25 and 0.5 turn are electrically connected to form a 0.75 turn of an inductor coil on each ferrite sheet. The conductor patterns on the successive intermediate sheets are connected to each other for forming an inductor coil having a number of turns which is a multiple of 0.75, and the conductor patterns on the upper surface of the uppermost of the plurality of intermediate ferrite sheets and the lower surface of the lowermost of the intermediate ferrite sheets are electrically connected to the conductor patterns on the surfaces of the end sheets which face each other for forming with the lastmentioned conductor pattern a complete inductor coil.
摘要翻译：层叠型电感器具有多个彼此组装并且层叠在一起的铁素体片，最上面和最下面的片是其上具有引出导体图案的端片，并且端片彼此面对的导体图案连接到引出导体图案并且用于连接到中间片材上的导体图案，以及多个中间铁氧体片，每个中间铁氧体片的一个表面上的导体图案对应于电感线圈的0.25匝和导体在另一个表面上对应于电感线圈的0.5匝的每个铁氧体片的每个铁氧体片具有开口，0.25和0.5匝的导体图案通过该开口电连接，以在每个铁氧体片上形成0.75匝的电感线圈。连续中间片上的导体图形彼此连接，形成匝数为0.75倍的电感线圈，多个中间铁氧体片的最上面的导体图案和最下面的中间铁氧体片的下表面电连接到彼此相对的端片的表面上的导体图案，以形成具有完整电感线圈的最后导体图案。

2. 发明授权

US5045380A Lamination type inductor 失效
标题翻译：层压型电感
公开(公告)号：US5045380A
公开(公告)日：1991-09-03
申请号：US397652
申请日：1989-08-23
申请人： Takashi Kobayashi , Hiroyuki Takeuchi , Minoru Tamada
发明人： Takashi Kobayashi , Hiroyuki Takeuchi , Minoru Tamada
IPC分类号： H01F17/00
CPC分类号： H01F17/0013 , Y10S428/901 , Y10T428/24802 , Y10T428/24917 , Y10T428/31678
摘要： A lamination type inductor having a ferrite layer having opposite main surfaces each with a periphery including opposite ends having end edges thereat, the ferrite layer further having end edges at the opposite ends of the main surfaces and a through hole therein along the periphery, the ferrite layer having a conductor pattern on each main surafce thereof, the conductor pattern on one main surface having a first end portion along one end of the one main surface and extending 0.75 turn from about the middle of the first end portion along the periphery of the one main surface of the ferrite layer to the through hole, and the conductor pattern on the other main surface having a second end portion along the other end of the other main surface and extending 0.75 turn from about the middle of the second end portion along the periphery of the other main surface of the ferrite layer to the through hole, the conductor patterns being electrically connected through the through hole for forming a substantially 1.5-turn coil; outside ferrite layers laminated onto the opposite main surfaces of ferrite layer and having outside end portions corresponding to the opposite ends of said ferrite layer; and outside electrodes on the outside of the laminated body at the respective outside end portions of the outside ferrite layers and the end edges of the ferrite layer and electrically connected with the first and second end portions.
摘要翻译：一种层叠型电感器，具有铁氧体层，所述铁氧体层具有相反的主表面，每个外表面具有包括端部边缘在内的相对端部的边缘，所述铁氧体层的主表面的相对端处具有端部边缘，并且沿其周边具有通孔，所述铁氧体在其主表面上具有导体图形的导体图案，一个主表面上的导体图案具有沿着一个主表面的一端的第一端部，并沿着该一个主表面的周边从第一端部的中部延伸0.75转铁氧体层的主表面到通孔，另一个主表面上的导体图案沿着另一个主表面的另一端具有第二端部，并沿着第二端部的周边从第二端部的中部延伸0.75转的铁氧体层的另一个主表面到通孔，导体图案通过用于形成a的通孔电连接基本上为1.5匝线圈; 在铁氧体层的相对的主表面上层叠有铁氧体层，并且具有与所述铁氧体层的相对端相对的外端部; 以及外侧铁氧体层的外侧端部和铁氧体层的端部边缘的层叠体的外侧的外部电极，与第一和第二端部电连接。

3. 发明授权

US10077485B2 Steel sheet for soft-nitriding and method for manufacturing the same 有权
公开(公告)号：US10077485B2
公开(公告)日：2018-09-18
申请号：US14409549
申请日：2012-06-27
申请人： Takashi Kobayashi , Nobuyuki Nakamura , Yoshimasa Funakawa
发明人： Takashi Kobayashi , Nobuyuki Nakamura , Yoshimasa Funakawa
IPC分类号： C22C38/26 , C21D6/00 , C22C38/00 , C22C38/06 , C22C38/04 , C21D9/46 , C21D8/02 , C22C38/02 , C22C38/24 , C22C38/38 , C23C8/26
CPC分类号： C21D9/46 , C21D6/002 , C21D6/005 , C21D6/008 , C21D8/0226 , C21D8/0263 , C21D2211/005 , C21D2211/009 , C22C38/00 , C22C38/001 , C22C38/02 , C22C38/04 , C22C38/06 , C22C38/24 , C22C38/26 , C22C38/38 , C23C8/26
摘要： A steel sheet for soft-nitriding has a composition containing: C: 0.05% or more to 0.10% or less; Si: 0.5% or less; Mn: 0.7% or more to 1.5% or less; P: 0.05% or less; S: 0.01% or less; Al: 0.01% or more to 0.06% or less; Cr: 0.5% or more to 1.5% or less; V: 0.03% or more to 0.30% or less; and N: 0.005% or less, on a mass percent basis, wherein a ratio of amount of solute V to the V content (amount of solute V/V content) is more than 0.50, and balance comprises Fe and incidental impurities, and a complex-phase microstructure containing ferrite and pearlite.

4. 发明申请

US20150299830A1 STEEL SHEET FOR SOFT-NITRIDING AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：用于软土的钢板及其制造方法
公开(公告)号：US20150299830A1
公开(公告)日：2015-10-22
申请号：US14408662
申请日：2012-06-27
申请人： Takashi Kobayashi , Nobuyuki Nakamura , Tetsuya Mega
发明人： Takashi Kobayashi , Nobuyuki Nakamura , Tetsuya Mega
IPC分类号： C22C38/26 , C21D9/46 , C22C38/00 , C22C38/06 , C22C38/04 , C22C38/02 , C21D8/02 , C21D6/00
CPC分类号： C22C38/26 , C21D6/002 , C21D6/005 , C21D6/008 , C21D8/0263 , C21D9/46 , C21D2211/005 , C21D2211/009 , C22C38/00 , C22C38/001 , C22C38/002 , C22C38/02 , C22C38/04 , C22C38/06 , C23C8/32
摘要： A steel sheet for soft-nitriding has a composition containing: C: 0.05% or more to 0.10% or less; Si: 0.5% or less; Mn: 0.7% or more to 1.5% or less; P: 0.05% or less; S: 0.01% or less; Al: 0.01% or more to 0.06% or less; Cr: 0.5% or more to 1.5% or less; Nb: 0.005% or more to 0.025% or less; and N: 0.005% or less, on a mass percent basis, such that C and Nb satisfy 0.10≦Nb/C≦0.30 (where C and Nb are respective contents of the elements (by mass %)), wherein balance comprises Fe and incidental impurities, and a microstructure that is a complex-phase microstructure containing ferrite and pearlite, and the microstructure having a ratio of a microstructure other than the ferrite and the pearlite of 1% or less, and the microstructure having a ratio of polygonal ferrite in the ferrite of less than 50%.
摘要翻译：软氮化钢板的组成为：C：0.05％以上且0.10％以下， Si：0.5％以下; Mn：0.7％以上至1.5％以下; P：0.05％以下; S：0.01％以下; Al：0.01％以上至0.06％以下; Cr：0.5％以上至1.5％以下; Nb：0.005％以上至0.025％以下; 和N：0.005％以下，C和Nb满足0.10＆nlE; Nb / C＆lt; NlE; 0.30（其中，C和Nb分别为元素含量（质量％）），其中余量包含Fe 和杂质，以及包含铁素体和珠光体的复相组织的显微组织以及具有1％以下的铁素体和珠光体以外的组织比的微结构，以及具有多边形铁素体在铁素体中小于50％。

5. 发明授权

US08866123B2 Non-volatile memory device and production method thereof 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US08866123B2
公开(公告)日：2014-10-21
申请号：US13884331
申请日：2010-11-22
申请人： Yoshitaka Sasago , Masaharu Kinoshita , Takahiro Morikawa , Akio Shima , Takashi Kobayashi
发明人： Yoshitaka Sasago , Masaharu Kinoshita , Takahiro Morikawa , Akio Shima , Takashi Kobayashi
IPC分类号： H01L47/00 , H01L45/00 , H01L29/792 , H01L27/24 , H01L29/66 , H01L27/115
CPC分类号： H01L27/2436 , H01L27/1157 , H01L27/11582 , H01L27/2409 , H01L27/2454 , H01L27/2481 , H01L27/249 , H01L29/66833 , H01L29/7926 , H01L45/06 , H01L45/1226 , H01L45/1233 , H01L45/144 , H01L45/1608 , H01L45/1616 , H01L45/1683
摘要： A vertical chain memory includes two-layer select transistors having first select transistors which are vertical transistors arranged in a matrix, and second select transistors which are vertical transistors formed on the respective first select transistors, and a plurality of memory cells connected in series on the two-layer select transistors. With this configuration, the adjacent select transistors are prevented from being selected by respective shared gates, the plurality of two-layer select transistors can be selected, independently, and a storage capacity of a non-volatile storage device is prevented from being reduced.
摘要翻译：垂直链式存储器包括具有第一选择晶体管的两层选择晶体管，它们是以矩阵形式排列的垂直晶体管，第二选择晶体管是形成在各个第一选择晶体管上的垂直晶体管，以及多个存储单元串联连接双层选择晶体管。利用这种配置，防止相邻的选择晶体管被相应的共享栅极选择，可以独立地选择多个两层选择晶体管，并且防止非易失性存储装置的存储容量减小。

6. 发明授权

US08835872B2 Sample stage device 有权
标题翻译：样品台装置
公开(公告)号：US08835872B2
公开(公告)日：2014-09-16
申请号：US13806989
申请日：2011-06-23
申请人： Takashi Kobayashi
发明人： Takashi Kobayashi
IPC分类号： H01J37/20
CPC分类号： H01J37/20 , H01J2237/20285 , H01J2237/20292 , H01J2237/2817 , H01L21/68
摘要： A sample stage device (10) is so configured as to calculate ideal position information xtg(i), tg(i) per predetermined period that is unaffected by drive conditions relating to gaps (25, 26), etc., and to determine, per predetermined cycle and in real time, deviations dx(i), dy(i) between real-time measured positions x(i), y(i) by position detectors comprising laser interferometers (33, 34), etc., and ideal position information xtg(i), tg(i). In addition, it calculates, based on deviations dx(i), dy(i) thus determined, such speed command values vx(i), vy(i) for motors (27, 28) that measured values x(i), y(i) would follow ideal position information xtg(i), tg(i), and performs stable and high-speed positioning control for a sample table (11) through feedback control that controls speed in real time. Thus, with respect to a sample stage device, it is possible to provide a stable and high-speed positioning control method for a sample table, which is capable of suppressing noise caused by thermal drift and vibration, without being affected by drive conditions, such as the initial states of gaps, etc.
摘要翻译：样品台装置（10）被配置为计算不受与间隙（25,26）等有关的驱动条件的影响的每预定周期的理想位置信息xtg（i），tg（i）并且实时地通过包括激光干涉仪（33,34）的位置检测器等实时测量位置x（i），y（i）之间的偏差dx（i），dy（i）和理想位置信息xtg（i），tg（i）。另外，根据如此确定的偏差dx（i），dy（i），计算出测量值x（i），y（i）的电动机（27,28）的速度指令值vx（i），vy （i）将遵循理想位置信息xtg（i），tg（i），并且通过实时控制速度的反馈控制对样本表（11）执行稳定和高速定位控制。因此，对于样品台装置，可以提供一种用于样品台的稳定且高速的定位控制方法，其能够抑制由热漂移和振动引起的噪声，而不受驱动条件的影响，例如作为差距的初始状态等

7. 发明授权

US08772746B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US08772746B2
公开(公告)日：2014-07-08
申请号：US13349653
申请日：2012-01-13
申请人： Masaharu Kinoshita , Yoshitaka Sasago , Takashi Kobayashi
发明人： Masaharu Kinoshita , Yoshitaka Sasago , Takashi Kobayashi
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , H01L27/2454 , H01L27/2472 , H01L45/144 , H01L45/1675
摘要： A semiconductor memory device in which the cell area can be decreased and the minimum feature size is not restricted by the thickness of the material forming the memory cell. In a semiconductor memory device, a gate insulating film, a channel extending in a direction X, and a resistance change element extending in the direction X are formed successively above multiple word lines extending in a direction Y, and a portion of the channel and a portion of the resistance change element are disposed above each of the plurality of the word lines. Such configuration can decrease the cell area and ensure the degree of design freedom.
摘要翻译：可以减小单元面积并且最小特征尺寸不受形成存储单元的材料的厚度的半导体存储器件。在半导体存储器件中，连续地沿着Y方向延伸的多个字线形成栅极绝缘膜，沿X方向延伸的沟道和沿X方向延伸的电阻变化元件，并且沟道的一部分和电阻变化元件的一部分设置在多条字线的上方。这样的配置可以减小单元面积并确保设计自由度。

8. 发明授权

US08758253B2 Ultrasonic probe and ultrasonic diagnostic apparatus using the same 有权
标题翻译：超声波探头和超声波诊断仪使用相同
公开(公告)号：US08758253B2
公开(公告)日：2014-06-24
申请号：US12513858
申请日：2007-11-06
申请人： Shuzo Sano , Akifumi Sako , Takashi Kobayashi , Mikio Izumi
发明人： Shuzo Sano , Akifumi Sako , Takashi Kobayashi , Mikio Izumi
IPC分类号： A61B8/14 , A61B8/00
CPC分类号： A61B8/4281 , A61B8/4455 , A61B8/4483 , B06B1/0292 , H04R19/005
摘要： An ultrasonic probe is disclosed which includes a cMUT chip having a plurality of vibration elements whose electromechanical coupling coefficient or sensitivity is changed according to a bias voltage and transmitting and receiving ultrasonic waves, an acoustic lens arranged above the cMUT chip, and a backing layer arranged below the cMUT chip. An electric leakage preventing unit is provided at the ultrasonic wave transmission/reception surface side of the acoustic lens or between the acoustic lens and the cMUT chip. The electric leakage preventing unit can be, for example, an insulating layer such as a ground layer. Such a structure makes it is possible to provide an ultrasonic probe capable of preventing electric leakage from the ultrasonic probe to an object to be examined so as to improve the electric safety and an ultrasonic diagnostic apparatus using the probe.
摘要翻译：公开了一种超声波探头，其包括具有多个振动元件的cMUT芯片，其中机电耦合系数或灵敏度根据偏置电压而变化，并且发送和接收超声波，布置在cMUT芯片上方的声透镜，以及布置在在cMUT芯片之下。在声透镜的超声波发送/接收表面侧或声透镜和cMUT芯片之间设置漏电防止单元。防漏电单元可以是例如绝缘层，例如接地层。通过这样的结构，能够提供能够防止从超声波探头向被检体的漏电以提高电气安全性的超声波探头以及使用该探针的超声波诊断装置。

9. 发明授权

US08642988B2 Non-volatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US08642988B2
公开(公告)日：2014-02-04
申请号：US13588112
申请日：2012-08-17
申请人： Masaharu Kinoshita , Yoshitaka Sasago , Takashi Kobayashi , Hiroyuki Minemura
发明人： Masaharu Kinoshita , Yoshitaka Sasago , Takashi Kobayashi , Hiroyuki Minemura
IPC分类号： H01L29/02
CPC分类号： H01L45/144 , G11C13/0004 , G11C2213/71 , G11C2213/74 , G11C2213/75 , G11C2213/78 , H01L27/2409 , H01L27/2481 , H01L45/06
摘要： A non-volatile memory device includes: a first line extending along a main surface of a substrate; a stack provided above the first line; a second line formed above the stack; a select element provided where the first and second lines intersect, the select element adapted to pass current in a direction perpendicular to the main surface; a second insulator film provided along a side surface of the stack; a channel layer provided along the second insulator film; an adhesion layer provided along the channel layer; and a variable resistance material layer provided along the adhesion layer, wherein the first and second lines are electrically connected via the select element and channel layer, a contact resistance via the adhesion layer between the channel layer and variable resistance material layer is low, and a resistance of the adhesion layer is high with respect to an extending direction of the channel layer.
摘要翻译：非易失性存储器件包括：沿衬底的主表面延伸的第一线; 提供在第一行之上的堆栈; 在堆叠之上形成第二线; 设置在所述第一和第二线相交的选择元件，所述选择元件适于在垂直于所述主表面的方向上传递电流; 沿着所述堆叠的侧表面设置的第二绝缘膜; 沿所述第二绝缘膜设置的沟道层; 沿着沟道层提供的粘合层; 以及沿着粘合层设置的可变电阻材料层，其中第一和第二线经由选择元件和沟道层电连接，通过沟道层和可变电阻材料层之间的粘合层的接触电阻低，并且粘合层的电阻相对于沟道层的延伸方向高。

10. 发明授权

US08558628B2 Piezoelectric vibrating piece, piezoelectric vibrator, oscillator, electronic apparatus, and radio timepiece 有权
标题翻译：压电振动片，压电振动器，振荡器，电子仪器和无线电钟表
公开(公告)号：US08558628B2
公开(公告)日：2013-10-15
申请号：US13369635
申请日：2012-02-09
申请人： Takashi Kobayashi
发明人： Takashi Kobayashi
IPC分类号： H01L41/053 , H03B5/32
CPC分类号： H03H3/02 , G04R20/10 , H03H9/21 , H03H2003/026
摘要： A piezoelectric vibrating piece includes a pair of vibration arm portions that is placed in a row in a width direction; a base portion to which proximal end sides in the pair of vibration arm portions in an extending direction are connected; and weight metal films that are formed on outer surfaces of the vibration arm portions, wherein the weight metal films are formed in positions that avoid regions of tip portions in the vibration arm portions in a longitudinal direction.
摘要翻译：压电振动片包括沿宽度方向排列成一排的一对振动臂部，所述一对振动臂部中的基端部朝向延伸方向连接的基部; 以及形成在所述振动臂部的外表面上的重量金属膜，其中所述重量金属膜形成为在纵向方向上避免所述振动臂部分中的尖端部分的区域的位置。

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