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1. 发明申请

US20070182218A1 Sun roof drive device 有权
标题翻译：太阳屋顶驱动装置
公开(公告)号：US20070182218A1
公开(公告)日：2007-08-09
申请号：US10588752
申请日：2005-02-04
申请人： Takashi Kanai , Takahiro Maruyama , Yutaka Nagai , Munehiro Kawai , Yoshikazu Ito
发明人： Takashi Kanai , Takahiro Maruyama , Yutaka Nagai , Munehiro Kawai , Yoshikazu Ito
IPC分类号： B60J7/043
CPC分类号： H02P6/18 , B60J7/0573 , H02P6/16
摘要： The sun roof drive device opens and closes a vehicle sun roof by a DC brushless motor, which is driven by rectangular waves when high torque is required at a low rotational speed and which is driven by sinusoidal waves or pseudo-sinusoidal waves when low noise is required.
摘要翻译：太阳屋顶驱动装置通过直流无刷电动机打开和关闭车辆屋顶，该直流无刷电动机以低转速需要高扭矩并由正弦波或伪正弦波驱动时由矩形波驱动，当低噪声为需要。

2. 发明授权

US07453222B2 Sun roof drive device 有权
标题翻译：太阳屋顶驱动装置
公开(公告)号：US07453222B2
公开(公告)日：2008-11-18
申请号：US10588752
申请日：2005-02-04
申请人： Takashi Kanai , Takahiro Maruyama , Yutaka Nagai , Munehiro Kawai , Yoshikazu Ito
发明人： Takashi Kanai , Takahiro Maruyama , Yutaka Nagai , Munehiro Kawai , Yoshikazu Ito
IPC分类号： H02P7/00
CPC分类号： H02P6/18 , B60J7/0573 , H02P6/16
摘要： The sun roof drive device opens and closes a vehicle sun roof by a DC brushless motor, which is driven by rectangular waves when high torque is required at a low rotational speed and which is driven by sinusoidal waves or pseudo-sinusoidal waves when low noise is required.
摘要翻译：太阳屋顶驱动装置通过直流无刷电动机打开和关闭车辆屋顶，该直流无刷电动机以低转速需要高扭矩并由正弦波或伪正弦波驱动时由矩形波驱动，当低噪声为需要。

3. 发明申请

US20070159013A1 Motor drive device 审中-公开
标题翻译：电机驱动装置
公开(公告)号：US20070159013A1
公开(公告)日：2007-07-12
申请号：US10588701
申请日：2005-02-04
申请人： Takahiro Maruyama , Yoshikazu Ito
发明人： Takahiro Maruyama , Yoshikazu Ito
IPC分类号： H02K5/24 , H02K7/10 , H02K5/10
CPC分类号： H02K5/15 , B60J7/0573 , H02K1/185 , H02K5/24 , H02K7/1166 , H02K29/08
摘要： A motor is inserted in the axial direction from an opening section into a motor case, one end surface in the axial direction of a stator is butted against an inner wall surface of the case, and the stator is urged toward axially one end surface side from axially the other end surface side and fixed in the motor case.
摘要翻译：电动机从开口部插入到电动机壳体中，定子的轴向的一个端面抵靠壳体的内壁面，并且定子被推向轴向的一个端面侧在另一端面侧轴向固定在电动机壳体中。

4. 发明申请

US20110081753A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20110081753A1
公开(公告)日：2011-04-07
申请号：US12896391
申请日：2010-10-01
申请人： Shinichi YAMANARI , Ryoichi Yoshifuku , Masaaki Shinohara , Takahiro Maruyama , Kenji Kawai , Yusaku Hirota
发明人： Shinichi YAMANARI , Ryoichi Yoshifuku , Masaaki Shinohara , Takahiro Maruyama , Kenji Kawai , Yusaku Hirota
IPC分类号： H01L21/8238
CPC分类号： H01L21/823857 , H01L21/28088 , H01L21/28185 , H01L21/28194 , H01L21/31111 , H01L21/823462 , H01L29/4966 , H01L29/517 , H01L29/6659 , H01L29/7833
摘要： A manufacturing method of a semiconductor device is provided for improving the reliability of a semiconductor device including a MISFET with a high dielectric constant gate insulator and a metal gate electrode. A first Hf-containing insulating film containing Hf, La, and O as a principal component is formed as a high dielectric constant gate insulator for an n-channel MISFET. A second Hf-containing insulating film containing Hf, Al, and O as a principal component is formed as a high dielectric constant gate insulator for a p-channel MISFET. Then, a metal film and a silicon film are formed and patterned by dry etching to thereby form first and second gate electrodes. Thereafter, parts of the first and second Hf-containing insulating films not covered with the first and second gate electrodes are removed by wet etching. At this time, a wet process with an acid solution not containing hydrofluoric acid, and another wet process with an alkaline solution are performed, and then a further wet process with an acid solution containing hydrofluoric acid is performed.
摘要翻译：提供半导体器件的制造方法，用于提高包括具有高介电常数栅极绝缘体和金属栅电极的MISFET的半导体器件的可靠性。作为主要成分，含有Hf，La，O的第一含Hf绝缘膜形成为n型MISFET的高介电常数栅极绝缘体。作为主要成分，含有Hf，Al，O的第二含Hf绝缘膜形成为p型MISFET的高介电常数栅极绝缘体。然后，通过干蚀刻形成金属膜和硅膜并图案化，从而形成第一和第二栅电极。此后，通过湿蚀刻除去未被第一和第二栅电极覆盖的第一和第二Hf含绝缘膜的部分。此时，进行用不含氢氟酸的酸溶液的湿法和用碱性溶液的另一种湿法，然后进行用含有氢氟酸的酸溶液进一步的湿法。

5. 发明授权

US5318654A Apparatus for cleaning a substrate with metastable helium 失效
标题翻译：用亚稳态氦气清洗底物的装置
公开(公告)号：US5318654A
公开(公告)日：1994-06-07
申请号：US893832
申请日：1992-06-04
申请人： Takahiro Maruyama , Toshiaki Ogawa , Hiroshi Morita , Tomoaki Ishida , Kenji Kawai
发明人： Takahiro Maruyama , Toshiaki Ogawa , Hiroshi Morita , Tomoaki Ishida , Kenji Kawai
IPC分类号： H01L21/302 , B08B7/00 , H01J37/32 , H01L21/00 , H01L21/304 , H01L21/3065
CPC分类号： H01L21/67028 , B08B7/0035 , H01J37/32357
摘要： An apparatus for cleaning a surface includes first and second reaction containers, a holding apparatus for holding, in the second reaction container, a substance to be processed on the surface of which foreign matter is present, an apparatus for supplying helium gas into the first reaction container, an apparatus for generating helium ions, electrons, and metastable helium by exciting helium gas in the first reaction container, and an apparatus for separating the metastable helium generated in the first reaction container and for introducing the metastable helium into the second reaction container.
摘要翻译：一种用于清洁表面的设备包括第一和第二反应容器，用于在第二反应容器中保持在其表面存在异物的待处理物质的保持装置，用于向第一反应中供应氦气的装置容器，用于通过在第一反应容器中激发氦气产生氦离子，电子和亚稳态氦的装置，以及用于分离在第一反应容器中产生的亚稳态氦并将亚稳态氦引入第二反应容器的装置。

6. 发明申请

US20130011899A1 CELL FUSION CHAMBER, CELL FUSION DEVICE, AND METHOD FOR CELL FUSION USING THE SAME 有权
标题翻译：细胞熔融室，细胞融合装置和使用其的细胞融合方法
公开(公告)号：US20130011899A1
公开(公告)日：2013-01-10
申请号：US13619193
申请日：2012-09-14
申请人： Toru FUTAMI , Takahiro Maruyama , Atsushi Morimoto
发明人： Toru FUTAMI , Takahiro Maruyama , Atsushi Morimoto
IPC分类号： C12N13/00
CPC分类号： C12M35/02 , C12M23/34
摘要： The present invention relates to a cell fusion chamber in which two types of cells having different diameters are fused, the cell fusion chamber including: a cell fusion region in which cell fusion is carried out; a pair of electrodes formed by a conductor and disposed opposite to each other in the cell fusion region; and a partition wall having at least one fine pore; near the fine pore, a cell fusion device including a cell fusion container containing a cell fusion region; a pair of electrodes; a spacer; and an insulator disposed between the spacer and one of the electrodes and having at least one fine pore; and an electronic power supply which applies an alternating voltage and a voltage pulsed direct current to the electrodes, and a cell fusion method using the same.
摘要翻译：本发明涉及一种细胞融合室，其中具有不同直径的两种细胞融合，所述细胞融合室包括：进行细胞融合的细胞融合区域; 由导体形成的一对电极，在电池熔融区域中相对设置; 和具有至少一个细孔的分隔壁; 靠近细孔的细胞融合装置，包括含有细胞融合区域的细胞融合容器; 一对电极; 间隔物以及设置在所述间隔件和所述电极中的一个之间并且具有至少一个细孔的绝缘体; 以及向电极施加交流电压和电压脉冲直流电的电子电源，以及使用该电子电源的电池组合方法。

7. 发明申请

US20110024675A1 HEAT CONDUCTIVE CURED PRODUCT AND MAKING METHOD 有权
标题翻译：热传导固化产品和制造方法
公开(公告)号：US20110024675A1
公开(公告)日：2011-02-03
申请号：US12918528
申请日：2009-02-20
申请人： Akihiro Endo , Masaya Asaine , Takahiro Maruyama
发明人： Akihiro Endo , Masaya Asaine , Takahiro Maruyama
IPC分类号： C09K5/00
CPC分类号： C09D183/04 , Y10T428/31663
摘要： A heat conductive cured product which can be handled even in a single layer or thin film form, can be readily attached to a heat-generating component or heat-dissipating member, and exhibits an appropriate tack and heat conductivity in a thin film form is provided as well as a method for preparing the same. A heat conductive cured product is prepared by applying a heat conductive composition as a thin film to a substrate which has been treated to have a silicone pressure-sensitive adhesive releasable surface, and curing the composition, the composition comprising as essential components, (a) an organopolysiloxane having alkenyl radicals, (b) a heat conductive filler, the filler containing at least 30 vol % of aluminum powder based on its total volume, (c) an organohydrogenpolysiloxane, (d) a platinum group metal catalyst, (e) a reaction regulator, and (f) a silicone resin.
摘要翻译：即使以单层或薄膜形式即可处理的导热固化产品也可以容易地附着在发热部件或散热部件上，并提供薄膜形式的合适的粘性和导热性以及其制备方法。通过将导热组合物作为薄膜施加到已经被处理以具有硅氧烷压敏粘合剂可释放表面的基底并且固化该组合物，该组合物包含作为必要成分的组合物，（a）具有烯基的有机聚硅氧烷，（b）导热填料，所述填料含有至少30体积％的铝粉基于其总体积，（c）有机氢聚硅氧烷，（d）铂族金属催化剂，（e）反应调节剂，和（f）有机硅树脂。

8. 发明申请

US20060099637A1 Oligonucleotide and method for detecting Verotoxin 审中-公开
标题翻译：寡核苷酸和检测Verotoxin的方法
公开(公告)号：US20060099637A1
公开(公告)日：2006-05-11
申请号：US11313849
申请日：2005-12-22
申请人： Takahiro Maruyama , Takahiko Ishiguro , Toshiki Taya
发明人： Takahiro Maruyama , Takahiko Ishiguro , Toshiki Taya
IPC分类号： C12Q1/68 , C07H21/04
CPC分类号： C12Q1/6865 , C12Q1/689 , C12Q2527/101
摘要： An oligonucleotide capable of binding to the intramolecular structure-free region of Verotoxin type 1 RNA or Verotoxin type 2 RNA at relatively low and constant temperature, and which can be used in a constant temperature nucleic acid amplification method, is provided. Also, a simple, speedy and highly sensitive method for detecting Verotoxin type 1 RNA or Verotoxin type 2 RNA is provided.
摘要翻译：提供了能够在相对低且恒定的温度下结合到Verotoxin 1型Verotoxin或2型RNA的分子内无结构域的寡核苷酸，并且可以用于恒温核酸扩增方法。此外，还提供了一种用于检测Verotoxin 1型RNA或Verotoxin 2型RNA的简单，快速和高度灵敏的方法。

9. 发明申请

US20060094041A1 Oligonucleotide and method for detecting verotoxin 失效
标题翻译：寡核苷酸和检测verotoxin的方法
公开(公告)号：US20060094041A1
公开(公告)日：2006-05-04
申请号：US11233094
申请日：2005-09-23
申请人： Takahiro Maruyama , Takahiko Ishiguro , Toshiki Taya
发明人： Takahiro Maruyama , Takahiko Ishiguro , Toshiki Taya
IPC分类号： C12Q1/68 , C07H21/04 , C12P19/34
CPC分类号： C12Q1/6865 , C12Q1/689 , C12Q2527/101
摘要： An olignucleotide capable of binding to the intramolecular structure-free region of Verotoxin type 1 RNA or Verotoxin type 2 RNA at relatively low and constant temperature, and which can be used in a constant temperature nucleic acid amplification method, is provided. Also, a simple, speedy and highly sensitive method for detecting Verotoxin type 1 RNA or Verotoxin type 2 RNA is provided.
摘要翻译：提供了能够在相对低且恒定的温度下结合Verotoxin 1型Verotoxin或2型RNA的分子内无结构域的可以在恒温核酸扩增方法中使用的寡核苷酸。此外，还提供了一种用于检测Verotoxin 1型RNA或Verotoxin 2型RNA的简单，快速和高度灵敏的方法。

10. 发明授权

US06825118B2 Method of manufacturing semiconductor device having trench element-isolating structure 失效
标题翻译：制造具有沟槽元件隔离结构的半导体器件的方法
公开(公告)号：US06825118B2
公开(公告)日：2004-11-30
申请号：US10438980
申请日：2003-05-16
申请人： Takahiro Maruyama , Ryoichi Yoshifuku
发明人： Takahiro Maruyama , Ryoichi Yoshifuku
IPC分类号： H01L21302
CPC分类号： H01L21/76229
摘要： A laminated film including a thermal oxide film, a polysilicon film and a silicon nitride film is formed on a silicon substrate, and the laminated film is patterned by using a resist pattern as a mask. An element-isolating trench is formed in the silicon substrate by using a patterned laminated film as a mask, and a silicon oxide film is buried in the element-isolating trench. After removing the silicon nitride film, unnecessary portions of the silicon oxide film are removed by CMP by using the polysilicon film as a stopper film. Then, the polysilicon film and the thermal oxide film are removed.
摘要翻译：在硅衬底上形成包括热氧化膜，多晶硅膜和氮化硅膜的层叠膜，并通过使用抗蚀剂图案作为掩模来对层压膜进行图案化。通过使用图案化的层压膜作为掩模，在硅衬底中形成元件隔离沟槽，并且氧化硅膜被掩埋在元件隔离沟槽中。在去除氮化硅膜之后，通过使用多晶硅膜作为阻挡膜，通过CMP去除不需要的氧化硅膜部分。然后，去除多晶硅膜和热氧化膜。

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